NLAS324 Dual SPST Analog Switch, Low Voltage, Single Supply

Dual SPST Analog Switch, Low Voltage, Single Supply

The NLAS324 is a dual SPST (Single Pole, Single Throw) switch, similar to 1/2 a standard 4066. The device permits the independent s e l e c t i o n o f 2 a n a l o g / d i g i t a l s i g n a l s . Av a i l a b l e i n t h e Ultra−Small 8 package.

The use of advanced 0.6 CMOS process, improves the R

resistance considerably compared to older higher voltage technologies.

Features

• On Resistance is 20 Typical at 5.0 V

• Matching is t Between Sections

• 2 − 6 V Operating Range

• ^{Ultra Low} t 5 pC Charge Injection

• Ultra Low Leakage t 1 nA at 5.0 V, 25 ° C

• Wide Bandwidth u 200 MHz, −3 dB

• 2000 V ESD (HBM)

• Ron Flatness $ 6 at 5.0 V

• Negative Enable

• Switches are Independent

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Figure 1. Pinout

V_CC NC1

COM1

GND IN2

NC2 1

2

3

8

7

6 COM2

IN1

4 5

MARKING DIAGRAM

PIN ASSIGNMENT 1

2

3 IN2

NC1

GND 4

5

COM1

IN1 6

FUNCTION TABLE

L H On/Off Enable Input

State of Analog Switch

On Off 7

8 V_CC

COM2 NC2

US8 US SUFFIX

CASE 493 8

1

www.onsemi.com

1 8

A7 MG G

A7 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)

Device Package Shipping^† ORDERING INFORMATION

NLAS324USG US8

(Pb−Free)

3,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

MAXIMUM RATINGS

Symbol Parameter Value Unit

V_CC DC Supply Voltage *0.5 to )7.0 V

V_I DC Input Voltage *0.5 to )7.0 V

V_O DC Output Voltage *0.5 to )7.0 V

I_IK DC Input Diode Current V_I < GND *50 mA

I_OK DC Output Diode Current V_O < GND *50 mA

I_O DC Output Sink Current $50 mA

I_CC DC Supply Current per Supply Pin $100 mA

I_GND DC Ground Current per Ground Pin $100 mA

T_STG Storage Temperature Range *65 to )150 _C

T_L Lead Temperature, 1 mm from Case for 10 Seconds 260 _C

T_J Junction Temperature under Bias )150 _C

JA Thermal Resistance (Note 1) 250 _C/W

P_D Power Dissipation in Still Air at 85_C 250 mW

MSL Moisture Sensitivity Level 1

F_R Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in

V_ESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4)

> 2000

> 150 N/A

V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.

2. Tested to EIA/JESD22−A114−A.

3. Tested to EIA/JESD22−A115−A.

4. Tested to JESD22−C101−A.

RECOMMENDED OPERATING CONDITIONS

Symbol Characteristics Min Max Unit

V_CC Positive DC Supply Voltage 2.0 5.5 V

V_IN Digital Input Voltage (Enable) GND 5.5 V

V_IO Static or Dynamic Voltage Across an Off Switch GND V_CC V

V_IS Analog Input Voltage (NO, COM) GND V_CC V

T_A Operating Temperature Range, All Package Types −55 +125 °C

t_r, t_f Input Rise or Fall Time, V_cc = 3.3 V + 0.3 V (Enable Input) V_cc = 5.0 V + 0.5 V

0 0

100 20

ns/V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES

Junction

Temperature 5C Time, Hours Time, Years

80 1,032,200 117.8

90 419,300 47.9

100 178,700 20.4

110 79,600 9.4

AILURE RATE

1

FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR

TJ = 130_C TJ = 120_C TJ = 110_C TJ = 100_C TJ = 90_C TJ = 80_C

DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)

Guaranteed Max Limit

Symbol Parameter Condition V_CC −55 to 255C <855C <1255C Unit

V_IH Minimum High−Level Input Voltage, Enable Inputs

2.0 3.0 4.5 5.5

1.5 2.1 3.15 3.85

1.5 2.1 3.15 3.85

1.5 2.1 3.15 3.85

V

V_IL Maximum Low−Level Input Voltage, Enable Inputs

2.0 3.0 4.5 5.5

0.5 0.9 1.35 1.65

0.5 0.9 1.35 1.65

0.5 0.9 1.35 1.65

V

I_IN Maximum Input Leakage Current, Enable Inputs

V_IN = 5.5 V or GND 0 V to 5.5 V +0.1 +1.0 +1.0 A I_CC Maximum Quiescent Supply

Current (per package)

Enable and V_IS = V_CC or GND

5.5 1.0 1.0 2.0 A

DC ELECTRICAL CHARACTERISTICS − Analog Section

Guaranteed Max Limit

Symbol Parameter Condition V_CC −55 to 255C <855C <1255C Unit

R_ON Maximum ON Resistance (Figures 8 − 12)

V_IN = V_IH V_IS = V_CC to GND I_IsI = <10.0mA

3.0 4.5 5.5

45 30 25

50 35 30

55 40 35

R_FLAT(ON) ON Resistance Flatness V_IN = V_IH I_IsI = <10.0mA V_IS = 1V, 2V, 3.5V

4.5 4 4 5

I_NO(OFF) Off Leakage Current, Pin 2 (Figure 3)

V_IN = V_IL

V_NO = 1.0 V, V_COM = 4.5 V or V_COM = 1.0 V and V_NO 4.5 V

5.5 1 10 100 nA

I_COM(OFF) Off Leakage Current, Pin 1 (Figure 3)

V_IN = V_IL

V_NO = 4.5 V or 1.0 V V_COM = 1.0 V or 4.5 V

5.5 1 10 100 nA

AC ELECTRICAL CHARACTERISTICS (Input t_r = t_f = 3.0 ns)

Guaranteed Max Limit

V_CC −55 to 255C <855C <1255C

Symbol Parameter Test Conditions (V) Min Typ Max Min Typ Max Min Typ Max Unit t_ON Turn−On Time R_L = 300 C_L = 35 pF

(Figures 4, 5, and 13)

2.03.04.55.5 7.0 5.0 4.5 4.5

14 10 9 9

16 12 11 11

16 12 11 11

ns

t_OFF Turn−Off Time R_L = 300 C_L = 35 pF (Figures 4, 5, and 13)

2.03.04.5 5.5

11.0 7.0 5.0 5.0

22 14 10 10

24 16 12 12

24 16 12 12

ns

Typical @ 25, V_CC = 5.0 V C_IN

C_{NO or} C_NC C_COM(OFF) C_COM(ON)

Maximum Input Capacitance, Select Input Analog I/O (switch off)

Common I/O (switch off) Feedthrough (switch on)

8 10 10 20

pF

ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)

V_CC Limit

Symbol Parameter Condition V 25°C Unit

BW Maximum On−Channel −3dB Bandwidth or Minimum Frequency Response

V_IS = 0 dBm

V_IS centered between V_CC and GND (Figures 6 and 14)

3.0 4.5 5.5

190 200 220

MHz

V_ONL Maximum Feedthrough On Loss V_IS = 0 dBm @ 10 kHz

V_IS centered between V_CC and GND (Figure 6)

3.0 4.5 5.5

−2

−2

−2

dB

V_ISO Off−Channel Isolation f = 100 kHz; V_IS = 1 V RMS V_IS centered between V_CC and GND (Figures 6 and 15)

3.0 4.5 5.5

−93 dB

Q Charge Injection

Enable Input to Common I/O

V_{IS =} V_{CC to} GND, F_IS = 20 kHz t_r = t_f = 3 ns

R_IS = 0 , C_L = 1000 pF

Q = C_L * V_OUT (Figures 7 and 16)

3.0 5.5

1.5 3.0

pC

THD Total Harmonic Distortion THD + Noise

F_IS = 20 Hz to 1 MHz, R_L = Rgen = 600 , C_L = 50 pF V_IS = 3.0 V_PP sine wave

V_IS = 5.0 V_PP sine wave (Figure 17)

3.3 5.5

0.3 0.15

%

−55 1.00E+03

5 1.00E−01

−15

−35

LEAKAGE (pA)

1.00E−04

Figure 3. Switch Leakage vs. Temperature

1.00E+05

I_NO(OFF)

TEMPERATURE (°C) 1.00E−03

1.00E−02 1.00E+00 1.00E+02 1.00E+04

25 45 1.00E−05

1.00E−06 1.00E−07 1.00E+01

65 85 105 125 145 I_COM(ON)

I_COM(OFF)

90%

90%

50%

50%

0 V Input

Output 35 pF

Input

COM DUT

NO

V_OH V_CC

V_OL V_CC

300

V_OUT 0.1 F

10% 10%

50%

50%

0 V Input

Output

V_OH V_CC

V_OL 35 pF

COM

Input

NO DUT

Figure 5. t_ON/t_OFF V_CC

t_ON t_OFF

300 V_OUT

Transmitted NO

COM Reference DUT

Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. V_ISO, Bandwidth and V_ONL are independent of the input signal direction.

V_ISO = Off Channel Isolation = 20 Log for V_IN at 100 kHz V_ONL = On Channel Loss = 20 Log for V_IN at 100 kHz to 50 MHz Bandwidth (BW) = the frequency 3 dB below V_ONL

50 50 Generator

Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/V_ONL

ǒ

Ǔ ǒ

Ǔ

On Off

Off COM

DUT NO

V_OUT V_CC

GND

Output V_IN

C_L

Figure 7. Charge Injection: (Q) V_IN

35.0 30.0

20.0 25.0

15.0 10.0 35

20 40

15 25

0 45

12

0 60

0.6 30

0.4 0.2 RON ()

0

V_COM (VOLTS)

Figure 8. R_ON vs. V_COM and V_CC (@255C) Figure 9. R_ON vs. V_COM and Temperature, V_CC = 2.0 V

RON ()

0 30 25 20 15

1.2 0.9 0.6 10

5 0

0.3 1.5 1.8 3

Figure 10. R_ON vs. V_COM and Temperature, V_CC = 2.5 V

V_COM (VOLTS)

Figure 11. R_ON vs. V_COM and Temperature, V_CC = 3.0 V

RON () RON ()TIME (nS)

80

0 0.2 2.4

8 14

6 10 16 18

−55°C

t_ON

V_IS (VOLTS) 10

20 40 50 70

1 2

10

0.8 1.2 1.4 1.6 1.8

5 30

0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.1 2.4 2.7

4 5.0

25°C 85°C 125°C

−55°C 25°C

85°C

125°C

−55°C

25°C 85°C 125°C

−55°C

25°C 85°C 125°C

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V_CC = 2.0

V_CC = 2.5

V_CC = 3.0

V_CC = 4.5 20

30

10 0 40 50 60 70 80

V_COM (VOLTS) RON ()

0 0.2 0.4 0.6 RON ()

−55°C

V_IS (VOLTS)

1 2

0.8 1.2 1.4 1.6 1.8 25°C

85°C 125°C

1.20

0.80 1.40

0.60 1.00

0.00 1.60

0.01 0

10 1

0.1

OFF ISOLATION (dB/Div)

V_COM (V)

Figure 14. ON Channel Bandwidth and Phase Shift Over Frequency

Figure 15. Off Channel Isolation

Q (pC)

10 100

10

100000 10000

1000 1

0.1

0.01

100

Figure 16. Charge Injection vs. V_COM

FREQUENCY (Hz)

THD (%)

0.0 3.0 5.0

FREQUENCY (MHz)

100 300

0.40 0.20

1.0 2.0 3.6 4.0 4.5

V_CC =3.0 V

5.5 V 3.3 V V_CC =5.0 V

10 0

Figure 17. THD vs. Frequency FREQUENCY (MHz)

BANDWIDTH (dB/Div)

0.01 0.1 1 10 100300

PHASE (Degrees)

0 5 Bandwidth (On − Loss)

Phase (Degrees)

V_CC = 5.0 V TA = 25°C

V_CC = 5.0 V TA = 25°C

−100

−50

1000000

CASE 493US8 ISSUE F

DATE 01 SEP 2021 SCALE 4 :1

XX = Specific Device Code M = Date Code

G = Pb−Free Package 1

8

XX MG G GENERIC MARKING DIAGRAM*

(Note: Microdot may be in either location)

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

PACKAGE DIMENSIONS

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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