NGTB50N60FL2WG IGBT - Field Stop II

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Features

• Extremely Efficient Trench with Field Stop Technology

• ^T

= 175 ° C

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• ⁵ m s Short−Circuit Capability

• This is a Pb−Free Device

• Solar Inverters

• Uninterruptible Power Supplies (UPS)

• ^Welding

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−emitter voltage VCES 600 V

Collector current

@ TC = 25°C

@ TC = 100°C

IC

100 50

A

Diode Forward Current

@ TC = 25°C

@ TC = 100°C

I_F

100 50

A

Diode Pulsed Current T_PULSE Limited by T_J Max

I_FM 200 A

Pulsed collector current, T_pulse limited by T_Jmax

I_CM 200 A

Short−circuit withstand time V_GE = 15 V, V_CE = 400 V, T_J≤ +150°C

t_SC 5 ms

Gate−emitter voltage VGE $20 V

Transient gate−emitter voltage V

(T_PULSE = 5 ms, D < 0.10) $30

Power Dissipation

@ TC = 25°C

@ TC = 100°C

P_D

417 208

W

Operating junction temperature range

T_J −55 to +175 °C Storage temperature range T_stg −55 to +175 °C Lead temperature for soldering, 1/8”

from case for 5 seconds

T_SLD 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

TO−247 CASE 340AL C

G

50 A, 600 V V

= 1.80 V E

= 0.46 mJ

E

Device Package Shipping ORDERING INFORMATION

NGTB50N60FL2WG TO−247 (Pb−Free)

30 Units / Rail www.onsemi.com

A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

MARKING DIAGRAM

50N60FL2 AYWWG G

E C

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal resistance junction−to−case, for IGBT R_qJC 0.36 °C/W

Thermal resistance junction−to−case, for Diode R_qJC 0.60 °C/W

Thermal resistance junction−to−ambient R_qJA 40 °C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited

V_GE = 0 V, IC = 500 mA V_(BR)CES 600 − − V

Collector−emitter saturation voltage V_GE = 15 V, I_C = 50 A V_GE = 15 V, I_C = 50 A, T_J = 175°C

V_CEsat 1.50

−

1.80 2.19

2.00

−

V Gate−emitter threshold voltage V_GE = V_CE, I_C = 350 mA V_GE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate−

emitter short−circuited

V_GE = 0 V, V_CE = 600 V V_GE = 0 V, V_CE = 600 V, T_{J =} 150°C

I_CES −

−

−

−

0.5 4.0

mA Gate leakage current, collector−emitter

short−circuited

V_GE = 20 V , V_CE = 0 V I_GES − − 200 nA

DYNAMIC CHARACTERISTIC Input capacitance

V_CE = 20 V, V_GE = 0 V, f = 1 MHz

C_ies − 5328 − pF

Output capacitance C_oes − 252 −

Reverse transfer capacitance C_res − 148 −

Gate charge total

V_CE = 480 V, I_C = 50 A, V_GE = 15 V

Q_g − 220 − nC

Gate to emitter charge Q_ge − 52 −

Gate to collector charge Q_gc − 116 −

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time

T_J = 25°C V_CC = 400 V, I_C = 50 A

R_g = 10 W V_GE = 0 V/ 15 V

t_d(on) − 100 − ns

Rise time t_r − 47 −

Turn−off delay time t_d(off) − 237 −

Fall time t_f − 67 −

Turn−on switching loss E_on − 1.50 − mJ

Turn−off switching loss E_off − 0.46 −

Total switching loss E_ts − 1.96 −

Turn−on delay time

T_J = 150°C V_CC = 400 V, I_C = 50 A

R_g = 10 W V_GE = 0 V/ 15 V

t_d(on) − 90 − ns

Rise time t_r − 49 −

Turn−off delay time t_d(off) − 245 −

Fall time t_f − 96 −

Turn−on switching loss E_on − 1.90 − mJ

Turn−off switching loss E_off − 0.83 −

Total switching loss E_ts − 2.73 −

DIODE CHARACTERISTIC

Forward voltage V_GE = 0 V, I_F = 50 A

V_GE = 0 V, I_F = 50 A, T_J = 175°C

V_F −

−

2.10 2.20

2.90

−

V Reverse recovery time

T_J = 25°C I_F = 50 A, V_R = 400 V

di_F/dt = 200 A/ms

t_rr − 94 − ns

Reverse recovery charge Q_rr − 0.45 − mC

Reverse recovery current I_rrm − 8 − A

Reverse recovery time

T_J = 175°C I_F = 50 A, V_R = 400 V

di_F/dt = 200 A/ms

t_rr − 170 − ns

Reverse recovery charge Q_rr − 1.40 − mC

Reverse recovery current I_rrm − 13 − A

Figure 1. Output Characteristics Figure 2. Output Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_CE, COLLECTOR−EMITTER VOLTAGE (V)

8 6

5 4 3 2 1 0

Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics V_CE, COLLECTOR−EMITTER VOLTAGE (V) V_GE, GATE−EMITTER VOLTAGE (V)

10 0

Figure 5. V_CE(sat) vs. T_J T_J, JUNCTION TEMPERATURE (°C)

175 150 125 100 75 50 25 0

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

7 V_GE = 15 V

to 20 V

T_J = 25°C

9 V 8 V 7 V

8 6

5 4 3 2 1 IC, COLLECTOR CURRENT (A)

7 T_J = 150°C

9 V 8 V 7 V

8 6

5 4 3 2 1 0 IC, COLLECTOR CURRENT (A)

7 T_J = −55°C

9 V 8 V

T_J = 25°C

T_J = 150°C

200

V_GE = 17 V to 20 V

V_GE = 20 V to 15 V

2 4 6 8

−75 −50 −25 2.50

2.00 1.50 1.00 0.50 0

I_C = 75 A I_C = 50 A I_C = 25 A

Figure 6. Typical Capacitance V_CE, COLLECTOR−EMITTER VOLTAGE (V)

90 80 50

40 30 20 10 0

C, CAPACITANCE (pF)

100 C_ies

C_oes C_res

70 60 10 V

11 V

10 V 11 V

7 V 10 V 11 V

12

T_J = 25°C 120

100 80 60 40 20 0

10,000

1000

100

10 160

0

140 160

14 16 18

3.00 140 120 100 80 60 40 20 0

13 V

13 V 15 V 160

140 120 100 80 60 40 20 0

13 V 160

140 120 100 80 60 40 20 0

TYPICAL CHARACTERISTICS

E_on Figure 7. Diode Forward Characteristics

V_F, FORWARD VOLTAGE (V) 3.0 2.5 2.0 1.5 1.0 0.5 0 70

IF, FORWARD CURRENT (A)

T_J = 25°C T_J = 150°C

60 50 40 30 20 10 0

Figure 8. Typical Gate Charge Q_G, GATE CHARGE (nC)

150 100

50 0

0 2 4 6 8 12 14 16

VGE, GATE−EMITTER VOLTAGE (V)

200 10

V_CE = 480 V V_GE = 15 V

I_C = 50 A

Figure 9. Switching Loss vs. Temperature T_J, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 0

SWITCHING LOSS (mJ)

160 V_CE = 400 V

V_GE = 15 V I_C = 50 A Rg = 10 W

E_off

Figure 10. Switching Time vs. Temperature T_J, JUNCTION TEMPERATURE (°C)

140 120 100 80 60 40 20 0 100 1000

SWITCHING TIME (ns)

160 V_CE = 400 V V_GE = 15 V I_C = 50 A Rg = 10 W t_r

t_d(on)

Figure 11. Switching Loss vs. I_C I_C, COLLECTOR CURRENT (A)

45 35 25 15 6

SWITCHING LOSS (mJ)

V_CE = 400 V V_GE = 15 V T_J = 150°C Rg = 10 W

E_off

Figure 12. Switching Time vs. I_C I_C, COLLECTOR CURRENT (A) 100

1000

SWITCHING TIME (ns) V_CE = 400 V

V_GE = 15 V T_J = 150°C Rg = 10 W 3.5 4.0

E_on

t_f t_d(off)

10

t_r t_d(on)

t_f t_d(off)

55 65 75 85 1015 25 35 45 55 65 75 85

3.0 2.5 2.0 1.5 1.0 0.5 0

95 105 5

4 3 2 1 0

95 105

E_on

E_off E_off

Figure 13. Switching Loss vs. Rg Rg, GATE RESISTOR (W)

45 35 25 15 5

SWITCHING LOSS (mJ)

V_CE = 400 V V_GE = 15 V T_J = 150°C I_C = 50 A

55 65 75 85

Figure 14. Switching Time vs. Rg Rg, GATE RESISTOR (W)

45 35 25 15 5

SWITCHING TIME (ns)

10,000

55 65 75 85

1000

Figure 15. Switching Loss vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

550 500 450 400 350

SWITCHING LOSS (mJ)

650 600 V_GE = 15 V

T_J = 150°C I_C = 75 A Rg = 10 W

Figure 16. Switching Time vs. V_CE V_CE, COLLECTOR−EMITTER VOLTAGE (V)

SWITCHING TIME (ns)

1000

100

Figure 17. Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1000 100

10 1

0.1 1 10 100 1000

50 ms 100 ms 1 ms dc operation

Single Nonrepetitive Pulse T_C = 25°C Curves must be derated linearly with increase in temperature

Figure 18. Reverse Bias Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1 10 100 1000

V_GE = 15 V, T_C = 125°C

1000 100

10 1

E_on

t_r

t_d(on)

t_f t_d(off)

V_CE = 400 V V_GE = 15 V T_J = 150°C I_C = 50 A

100

10

V_GE = 15 V T_J = 150°C I_C = 75 A Rg = 10 W

t_r t_d(on)

t_f t_d(off)

10 14

12 10 8 6 4 2 0

6

5 4 3 2 1 0

300 250 200

150 150200 250 300 350 400 450 500 550 600650

TYPICAL CHARACTERISTICS

Figure 19. t_rr vs. di_F/dt (V_R = 400 V)

di_F/dt, DIODE CURRENT SLOPE (A/ms) 500

300 100

160

trr, REVERSE RECOVERY TIME (ns)

700 900

T_J = 175°C, I_F = 50 A

1100

Figure 20. Q_rr vs. di_F/dt (V_R = 400 V)

di_F/dt, DIODE CURRENT SLOPE (A/ms) 500

300 100

3.0

Qrr, REVERSE RECOVERY CHARGE (mC)

700 900 1100

Figure 21. I_rm vs. di_F/dt (V_R = 400 V)

di_F/dt, DIODE CURRENT SLOPE (A/ms) 700

500 I, REVERSE RECOVERY CURRENT (A)rm 300

900 1100

T_J, JUNCTION TEMPERATURE (°C) VF, FORWARD VOLTAGE (V)

2.75

Figure 22. V_F vs. T_J 1.0

0.5 0

2.00

1.00 140

120 100 80 60 40

40

25

−25

−75 75 125 175

100 20

10

0

T_J = 25°C, I_F = 50 A

1.5

T_J = 175°C, I_F = 50 A

T_J = 25°C, I_F = 50 A

T_J = 175°C, I_F = 50 A

T_J = 25°C, I_F = 50 A

1.25 2.25 2.50

I_F = 25 A I_F = 60 A

I_F = 50 A

−50 0 50 100 150 200

30

1.50 1.75 2.0 2.5

Figure 23. IGBT Transient Thermal Impedance ON−PULSE WIDTH (s)

1 0.1

0.01 0.0001

1

SQUARE−WAVE PEAK R(t) (°C/W)

0.00001 50% Duty Cycle 20%

10%

5%

2%

Single Pulse

R_qJC = 0.36

Junction

C₁ C₂ R₁ R₂

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

Case

C_n R_n 0.1

0.01

0.001

0.0001

0.001

R_i (°C/W) C_i (J/°C) 0.020315 0.004922

0.000001

0.034265 0.021803 0.054410 0.113326 0.040172

0.009229 0.045865 0.058120 0.088241 0.787180

Figure 24. Diode Transient Thermal Impedance ON−PULSE WIDTH (s)

SQUARE−WAVE PEAK R(t) (°C/W) 50% Duty Cycle

20%

10%

5%

2%

Single Pulse 1

R_qJC = 0.60

Junction Case

C₁ C₂

R₁ R₂ R_n

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

C_n

1 0.1

0.01 0.0001

0.000001 0.00001 0.001

R_i (°C/W) C_i (J/°C) 0.000125 0.007969

0.1

0.01

0.001

0.010774 0.010678 0.028006 0.045699 0.104967 0.059973 0.066388 0.134301 0.152890

0.000928 0.002961 0.003571 0.006920 0.009527 0.052729 0.150629 0.235463 0.654064

Figure 25. Collector Current vs. Switching Frequency

Figure 26. Test Circuit for Switching Characteristics

Figure 27. Definition of Turn On Waveform

Figure 28. Definition of Turn Off Waveform

TO−247 CASE 340AL

ISSUE D

DATE 17 MAR 2017

GENERIC MARKING DIAGRAM*

XXXXX = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

SCALE 1:1

XXXXXXXXX AYWWG E2

L1 D

L

b4 b2

b E

0.25 ^M B A^M c

A1 A

1 2 3

B

e

2X

3X

0.635^M B A^M A

S P

SEATING PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.

MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.

5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.

6.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.

7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.

DIM MIN MAX MILLIMETERS

D 20.80 21.34 E 15.50 16.25 A 4.70 5.30

b 1.07 1.33 b2 1.65 2.35

e 5.45 BSC A1 2.20 2.60

c 0.45 0.68

L 19.80 20.80

Q 5.40 6.20 E2 4.32 5.49

L1 3.81 4.32 P 3.55 3.65 S 6.15 BSC b4 2.60 3.40 NOTE 6

4

NOTE 7

Q

NOTE 4

NOTE 3

NOTE 5

E2/2

NOTE 4

F 2.655 ---

2XF

98AON16119F DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−247

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