NGTB50N60SWG IGBT

NGTB50N60SWG IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Features

• Low Saturation Voltage using Trench with Fieldstop Technology

• Low Switching Loss Reduces System Power Dissipation

• Low Gate Charge

• Soft, Fast Free Wheeling Diode

• This is a Pb−Free Device

• Inductive Heating

• Soft Switching

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−emitter voltage VCES 600 V

Collector current

@ TC = 25°C

@ TC = 100°C

IC

100 50

A

Pulsed collector current, T_pulse limited by T_Jmax

ICM 200 A

Diode forward current

@ TC = 25°C

@ TC = 100°C

IF

100 50

A

Diode pulsed current, T_pulse limited by T_Jmax

IFM 200 A

Gate−emitter voltage VGE $20 V

Power Dissipation

@ TC = 25°C

@ TC = 100°C

PD W

Operating junction temperature range

T_J −55 to +150 °C Storage temperature range T_stg −55 to +150 °C Lead temperature for soldering, 1/8”

from case for 5 seconds

T_SLD 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

TO−247 CASE 340AL C

G

50 A, 600 V V

= 2.4 V E

= 0.60 mJ

E

Device Package Shipping ORDERING INFORMATION

www.onsemi.com

A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

MARKING DIAGRAM

50N60SW AYWWG G

E C

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal resistance junction−to−case, for IGBT R_qJC 0.87 °C/W

Thermal resistance junction−to−case, for Diode R_qJC 1.46 °C/W

Thermal resistance junction−to−ambient R_qJA 40 °C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit

STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited

V_GE = 0 V, I_C = 500 mA V_(BR)CES 600 − − V

Collector−emitter saturation voltage V_GE = 15 V, I_C = 50 A V_GE = 15 V, I_C = 50 A, T_J = 150°C

V_CEsat −

−

2.4 2.6

2.6

−

V Gate−emitter threshold voltage V_GE = V_CE, I_C = 150 mA V_GE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate−

emitter short−circuited

V_GE = 0 V, V_CE = 600 V V_GE = 0 V, V_CE = 600 V, T_{J =} 150°C

I_CES −

−

−

−

0.2 2

mA Gate leakage current, collector−emitter

short−circuited

V_GE = 20 V , V_CE = 0 V I_GES − − 100 nA

DYNAMIC CHARACTERISTIC Input capacitance

V_CE = 20 V, V_GE = 0 V, f = 1 MHz

C_ies − 3100 − pF

Output capacitance C_oes − 120 −

Reverse transfer capacitance C_res − 80 −

Gate charge total

V_CE = 480 V, I_C = 50 A, V_GE = 15 V

Q_g 135 nC

Gate to emitter charge Q_ge 27

Gate to collector charge Q_gc 67

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time

T_J = 25°C V_CC = 400 V, I_C = 50 A

R_g = 10 W V_GE = 0 V/ 15V

t_d(on) 70 ns

Rise time t_r 32

Turn−off delay time t_d(off) 144

Fall time t_f 66

Turn−off switching loss E_off 0.60 mJ

Turn−on delay time

T_J = 150°C V_CC = 400 V, I_C = 50 A

R_g = 10 W V_GE = 0 V/ 15V

t_d(on) 70 ns

Rise time t_r 36

Turn−off delay time t_d(off) 150

Fall time t_f 85

Turn−off switching loss E_off 1.11 mJ

DIODE CHARACTERISTIC

Forward voltage V_GE = 0 V, I_F = 25 A

V_GE = 0 V, I_F = 25 A, T_J = 150°C

V_F 1.2

1.11

1.5 V

Reverse recovery time T_J = 25°C

I_F = 25 A, V_R = 200 V di_F/dt = 200 A/ms

t_rr 376 ns

Reverse recovery charge Q_rr 4145 nc

Reverse recovery current I_rrm 22 A

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL CHARACTERISTICS

140 120 100 80 60 40 20 0

0 1 2 3 4 5 6 7 8

V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

Figure 1. Output Characteristics V_GE = 17 V to 15 V

11 V 10 V 9 V 7 V to 8 V T_J = 25°C

13 V V_GE = 17 V

to 13 V

11 V 10 V 9 V 8 V 7 V T_J = 150°C

0 1 2 3 4 5 6 7 8

140 120 100 80 60 40 20 0

V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

Figure 2. Output Characteristics

140 120 100 80 60 40 20 0

0 1 2 3 4 5 6 7 8

160

V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

Figure 3. Output Characteristics T_J = −55°C V_GE = 17 V

to 13 V

11 V 10 V 9 V 7 V to 8 V

V_GE, GATE−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

Figure 4. Typical Transfer Characteristics T_J = 25°C

T_J = 150°C 140

120 100 80 60 40 20 0

0 4 8 12 16

−75 4.50 4.00 3.50 3.00 2.50 2.00 1.50 1.00 0.50

0 −25 25 75 125 175

T_J, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLT- AGE (V)

Figure 5. V_CE(sat) vs. T_J I_C = 80 A

I_C = 40 A I_C = 20 A I_C = 5 A

0 10 20 90 100

10000

1000

100

10 30 40 50 60 70 80

V_CE, COLLECTOR−EMITTER VOLTAGE (V)

CAPACITANCE (pF)

Figure 6. Typical Capacitance C_ies

C_oes C_res

TYPICAL CHARACTERISTICS

V_F, FORWARD VOLTAGE (V) IF, FORWARD CURRENT (A)

Figure 7. Diode Forward Characteristics T_J = 25°C

T_J = 150°C 120

100 80 60 40 20 0

0 0.5 1 1.5 2 2.5

20

0

Q_G, GATE CHARGE (nC) VGE, GATE−EMITTER VOLTAGE (V)

Figure 8. Typical Gate Charge

20 40 60 80 100 120 140

15

10

5

0

V_CE = 480 V

T_J, JUNCTION TEMPERATURE (°C) Eoff, TURN−OFF SWITCHING LOSS (mJ)

Figure 9. Switching Loss vs. Temperature V_CE = 400 V

V_GE = 15 V I_C = 50 A R_g = 10 W 1.2

0 20 40 120 140 160

1 0.8 0.6 0.4 0.2 0

60 80 100

T_J, JUNCTION TEMPERATURE (°C)

SWITCHING TIME (ns)

Figure 10. Switching Time vs. Temperature 1000

0 20 40 60 80 100 120 140

100

10

1

160 V_CE = 400 V

V_GE = 15 V I_C = 50 A R_g = 10 W

t_d(off) t_d(on) t_f

t_r

I_C, COLLECTOR CURRENT (A) Eoff, TURN−OFF SWITCHING LOSS (mJ)

Figure 11. Switching Loss vs. I_C 2.5

4 16 28 40 52 64 76 88

2

1.5 1 0.5

0

V_CE = 400 V V_GE = 15 V T_J = 150°C R_g = 10 W

SWITCHING TIME (ns)

1000

100

10

1

I_C, COLLECTOR CURRENT (A) Figure 12. Switching Time vs. Current

4 20 32 44 56 68 80

V_CE = 400 V V_GE = 15 V T_J = 150°C R_g = 10 W

t_d(off) t_d(on)

t_f

t_r

TYPICAL CHARACTERISTICS

Eoff, TURN−OFF SWITCHING LOSS (mJ)

R_G, GATE RESISTOR (W) Figure 13. Switching Loss vs. R_G 1.6

5 1.4 1.2 1 0.8 0.6 0.4 0.2 0

15 25 35 45 55 65 75 85

V_CE = 400 V V_GE = 15 V

I_C = 50 A T_J = 150°C

SWITCHING TIME (ns)

R_G, GATE RESISTOR (W) Figure 14. Switching Time vs. R_G 1000

5 15 25 35 45 55 65 75 85

100

10

1

V_CE = 400 V V_GE = 15 V

I_C = 50 A T_J = 150°C t_d(off)

t_d(on) t_f t_r

V_CE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. V_CE Eoff, TURN−OFF SWITCHING LOSS (mJ)

1.4

175 225 275 325 375 425 475 525 575

1.2 1 0.8 0.6 0.4 0.2 0

V_GE = 15 V I_C = 50 A R_G = 10 W T_J = 150°C

SWITCHING TIME (ns)

V_CE, COLLECTOR−EMITTER VOLTAGE (V) Figure 16. Switching Time vs. V_CE 1000

100

10

1

175 225 275 325 375 425 475 525 575

t_d(off) t_d(on) t_f

t_r

V_GE = 15 V I_C = 50 A R_G = 10 W T_J = 150°C

1000

1

V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

Figure 17. Safe Operating Area

10 100 1000

100

10 1

0.1 0.01

50 ms

100 ms 1 ms

dc operation

Single Nonrepetitive Pulse T_C = 25°C Curves must be derated linearly with increase in temperature

Figure 18. Reverse Bias Safe Operating Area V_CE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

1000 100

10 11

10 100 1000

V_GE = 15 V, T_C = 125°C

TYPICAL CHARACTERISTICS

50% Duty Cycle 20%

10%

5%

2%

1%

Single Pulse

R_qJC = 0.87

Figure 19. IGBT Transient Thermal Impedance

R(t) (°C/W)

PULSE TIME (sec) 0.001

0.01 0.1 1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

0.001 0.01 0.1 1 10

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 20. Diode Transient Thermal Impedance PULSE TIME (sec)

R(t) (°C/W)

R_qJC = 1.46 50% Duty Cycle

20%

10%

5%

2%

1%

Single Pulse

Junction Case

C₁ C₂

R₁ R₂ R_n

C_i = ti/R_i

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

C_n

ti (sec) 1.0E−4 5.48E−5

0.002 0.03 0.1 R_i (°C/W) 0.04077 0.09054 0.16141 0.21558 0.24842

2.0 0.11759

Junction Case

C₁ C₂

R₁ R₂ R_n

C_i = ti/R_i

Duty Factor = t₁/t₂ Peak T_J = P_DM x Z_qJC + T_C

C_n

ti (sec) 1.48E−4

0.002 0.03

0.1 2.0 R_i (°C/W) 0.18019 0.37276 0.45472 0.33236 0.11759

Figure 21. Test Circuit for Switching Characteristics

Figure 22. Definition of Turn On Waveform

Figure 23. Definition of Turn Off Waveform

TO−247 CASE 340AL

ISSUE D

DATE 17 MAR 2017

GENERIC MARKING DIAGRAM*

XXXXX = Specific Device Code A = Assembly Location

Y = Year

WW = Work Week G = Pb−Free Package

*This information is generic. Please refer to device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

SCALE 1:1

XXXXXXXXX AYWWG E2

L1 D

L

b4 b2

b E

0.25 ^M B A^M c

A1 A

1 2 3

B

e

2X

3X

0.635^M B A^M A

S P

SEATING PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.

MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.

5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.

6.∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.

7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.

DIM MIN MAX MILLIMETERS

D 20.80 21.34 E 15.50 16.25 A 4.70 5.30

b 1.07 1.33 b2 1.65 2.35

e 5.45 BSC A1 2.20 2.60

c 0.45 0.68

L 19.80 20.80

Q 5.40 6.20 E2 4.32 5.49

L1 3.81 4.32 P 3.55 3.65 S 6.15 BSC b4 2.60 3.40 NOTE 6

4

NOTE 7

Q

NOTE 4

NOTE 3

NOTE 5

E2/2

NOTE 4

F 2.655 ---

2XF

PACKAGE DIMENSIONS

98AON16119F DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−247

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