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©2011 Semiconductor Components Industries, LLC.

October-2017, Rev.3 1 Publication Order Number:

® MOSFET

FDMC7692

N-Channel Power Trench ^® MOSFET 30 V, 13.3 A, 8.5 m:

Features

„

Max r

= 8.5 m

at V

= 10 V, I

= 13.3 A

„

Max r

= 11.5 m

at V

= 4.5 V, I

= 10.6 A

„

High performance technology for extremely low r

„

Termination is Lead-free and RoHS Compliant

General Description

This N-Channel MOSFET is produced using

Semiconductor’s advanced Power Trench

process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Application

„

DC - DC Buck Converters

„

Notebook battery power management

„

Load switch in Notebook

MOSFET Maximum Ratings ^T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

V

Drain to Source Voltage 30 V

V

Gate to Source Voltage ±20 V

I

Drain Current -Continuous (Package limited) T

= 25 °C 16

A

-Continuous T

= 25 °C (Note 1a) 13.3

-Pulsed 40

E

Single Pulse Avalanche Energy (Note 3) 58 mJ

P

Power Dissipation T

= 25 °C 29

Power Dissipation T

= 25 °C (Note 1a) 2.3 W

T

, T

Operating and Storage Junction Temperature Range -55 to +150 °C

R

Thermal Resistance, Junction to Case 4.3

R

Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7692 FDMC7692 MLP 3.3x3.3 13 ’’ 12 mm 3000 units

Bottom

D D D D S

S S G Top

Pin 1

MLP 3.3x3.3

G

S S S D

D D D

5 6 7 8

3

2

1

4

® MOSFET

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Electrical Characteristics ^T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain to Source Breakdown Voltage I

= 250

A, V

= 0 V 30 V

'

BV

T

Breakdown Voltage Temperature

Coefficient I

= 250

A, referenced to 25 °C 16 mV/°C

I

Zero Gate Voltage Drain Current V

= 24 V, V

= 0 V 1

P

A

T

= 125 °C 250

I

Gate to Source Leakage Current V

= 20 V, V

= 0 V 100 nA

On Characteristics

V

Gate to Source Threshold Voltage V

= V

, I

= 250

A 1.2 1.9 3.0 V

'

V

T

Gate to Source Threshold Voltage

Temperature Coefficient I

= 250

A, referenced to 25 °C -6 mV/°C

r

Static Drain to Source On Resistance

V

= 10 V, I

= 13.3 A 7.2 8.5

m

V

= 4.5 V, I

= 10.6 A 9.5 11.5 V

= 10 V, I

= 13.3 A, T

= 125 °C 9.5 12.0

g

Forward Transconductance V

= 5 V, I

= 13.3 A 60 S

Dynamic Characteristics

C

Input Capacitance

V

= 15 V, V

= 0 V, f = 1 MHz

1260 1680 pF

C

Output Capacitance 480 635 pF

C

Reverse Transfer Capacitance 65 100 pF

R

Gate Resistance 0.9 2.4

Switching Characteristics

t

Turn-On Delay Time

V

= 15 V, I

= 13.3 A, V

= 10 V, R

= 6

9 18 ns

t

Rise Time 4 10 ns

t

Turn-Off Delay Time 21 33 ns

t

Fall Time 3 10 ns

Q

Total Gate Charge V

= 0 V to 10 V

V

= 15 V I

= 13.3 A

21 29 nC

Total Gate Charge V

= 0 V to 4.5 V 10 14 nC

Q

Total Gate Charge 5 nC

Q

Gate to Drain “Miller” Charge 3 nC

Drain-Source Diode Characteristics

V

Source to Drain Diode Forward Voltage V

= 0 V, I

= 13.3 A (Note 2) 0.86 1.2 V

= 0 V, I

= 1.9 A (Note 2) 0.75 1.2 V t

Reverse Recovery Time

I

= 13.3 A, di/dt = 100 A/

s 24 38 ns

Q

Reverse Recovery Charge 7 14 nC

NOTES:

1. R_TJA is determined with the device mounted on a 1 in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_TJC is guaranteed by design while R_TCA is determined by the user's board design.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0 %.

3. E_AS of 58 mJ is based on starting T_J = 25 ^oC, L = 1 mH, I_AS = 10.8 A, V_DD = 27 V, V_GS = 10 V.

a. 53 °C/W when mounted on a 1 in²pad of 2 oz copper

b.125 °C/W when mounted on a minimum pad of 2 oz copper

100% test at L = 0.1 mH, I_AS = 21 A.

® MOSFET

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Typical Characteristics ^T

= 25 °C unless otherwise noted

Figure 1.

0 1 2 3 4

0 10 20 30 40

V_GS = 3.5 V V_GS = 6 V

V_GS = 10 V

V_GS = 3 V V_GS = 4 V

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

V_GS = 4.5 V

ID,DRAIN CURRENT (A)

V_DS

,

On-Region Characteristics Figure 2.

0 10 20 30 40

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

V_GS = 4 V

V_GS = 6 V

V_GS = 4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

ID,DRAIN CURRENT (A)

V_GS = 10 V V_GS = 3.5 V

PULSE DURATION = 80 _Ps DUTY CYCLE = 0.5% MAX

Normalized On-Resistance vs Drain Current and Gate Voltage

Figure 3. Normalized On- Resistance -75 -50 -25 0 25 50 75 100 125 150 0.6

0.8 1.0 1.2 1.4 1.6

I_D = 13.3 A V_GS = 10 V

NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

T_J,JUNCTION TEMPERATURE (^oC)

vs Junction Temperature

Figure 4.

2 4 6 8 10

0 10 20 30 40

TJ= 125 ^oC I_D= 13.3 A

T_J= 25 ^oC

V_GS,GATE TO SOURCE VOLTAGE (V)

rDS(on),DRAIN TO SOURCE ON-RESISTANCE (m:) PULSE DURATION = 80 Ps

DUTY CYCLE = 0.5% MAX

On-Resistance vs Gate to Source Voltage

Figure 5. Transfer Characteristics

1 2 3 4 5

0 10 20 30 40

T_J = 150 ^oC V_DS= 5 V

PULSE DURATION = 80 _Ps DUTY CYCLE = 0.5% MAX

T_J = -55 ^oC T_J = 25 ^oC

ID, DRAIN CURRENT (A)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001 0.01 0.1 1 10 60

T_J = -55 ^oC T_J = 25 ^oC TJ= 150 ^oC

VGS= 0 V

IS, REVERSE DRAIN CURRENT (A)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

Forward Voltage vs Source Current

® MOSFET

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Figure 7.

0 3 6 9 12 15 18 21

0 2 4 6 8 10

I_D= 13.3 A

VDD = 15 V V_DD = 10 V

VGS, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC) V_DD = 20 V

Gate Charge Characteristics Figure 8.

0.1 1 10 30

20 100 1000 3000

f = 1 MHz VGS = 0 V

CAPACITANCE (pF)

V_DS, DRAIN TO SOURCE VOLTAGE (V) C_rss Coss C_iss

Capacitance vs Drain to Source Voltage

Figure 9.

0.01 0.1 1 10 30

1 10 20

T_J= 100 ^oC T_J= 25 ^oC

T_J= 125 ^oC

t_AV, TIME IN AVALANCHE (ms) IAS, AVALANCHE CURRENT (A)

Unclamped Inductive Switching Capability

Figure 10.

25 50 75 100 125 150

0 10 20 30 40 50

Limited by Package R_TJC = 5.0 ^oC/W

VGS= 4.5 V

VGS= 10 V

ID,DRAIN CURRENT (A)

T_c

,

Maximum Continuous Drain Current vs Case Temperature

Figure 11.

0.01 0.1 1 10 100

0.01 0.1 1 10 50

1 s 100 _Ps

DC 100 ms 10 ms 1 ms

I, DRAIN CURRENT (A)D 10 s

VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS

LIMITED BY r_DS(on) SINGLE PULSE TJ= MAX RATED R_TJA= 125 ^oC/W T_A= 25 ^oC

Forward Bias Safe Operating Area

Figure 12.

10

10

10

10

1 10 100 1000 0.5

1 10 100 1000

V_GS = 10 V

P(PK),PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec) SINGLE PULSE

R_TJA= 125 ^oC/W T_A= 25 ^oC

Single Pulse Maximum Power Dissipation

Typical Characteristics ^T

= 25 °C unless otherwise noted

® MOSFET

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Figure 13. Transient Thermal Response Curve

10

10

10

10

1 10 100 1000

0.001 0.01 0.1 1

SINGLE PULSE DUTY CYCLE-DESCENDING ORDER D = 0.5

0.2 0.1 0.05 0.02 0.01 2

Typical Characteristics ^T

= 25 °C unless otherwise noted

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

t, RECTANGULAR PULSE DURATION (sec)

P_DM

t₁ t₂ NOTES:

Duty Cycle, D = t₁ / t₂ Z_θJA(t) = r(t) x R_θJA

Peak T_J = P_DM x Z_θJA(t) + T_A R_θJA= 125 °C/W

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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