MJE5740, MJE5742 NPN Silicon Power Darlington Transistors

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NPN Silicon Power

Darlington Transistors

The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits.

Features

• These Devices are Pb−Free and are RoHS Compliant*

Applications

• Small Engine Ignition

• Switching Regulators

• ^Inverters

• Solenoid and Relay Drivers

• Motor Controls

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MJE5740 MJE5742

V_CEO(sus)

300 400

Vdc

Collector−Emitter Voltage

MJE5740 MJE5742

V_CEV

600 800

Vdc

Emitter−Base Voltage V_EB 8 Vdc

Collector Current − Continuous

− Peak (Note 1)

I_C I_CM

8 16

Adc Base Current − Continuous

− Peak (Note 1)

I_B I_BM

2.5 5

Adc Total Device Dissipation @ T_A = 25_C

Derate above 25°C

P_D 2

0.016 W W/_C Total Device Dissipation @ T_C = 25_C

Derate above 25°C

P_D 100

0.8

W W/_C Operating and Storage Junction

Temperature Range

T_J, T_stg −65 to +150 _C THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case R_q_JC 1.25 _C/W Thermal Resistance, Junction−to−Ambient R_q_JA 62.5 _C/W Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

T_L 275 _C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

POWER DARLINGTON TRANSISTORS

8 AMPERES 300−400 VOLTS

80 WATTS

TO−220AB CASE 221A−09

STYLE 1 1

www.onsemi.com

23

≈100 ≈50

MARKING DIAGRAM

MJE574x = Device Code x = 0 or 2

G = Pb−Free Package

A = Assembly Location

Y = Year

MJE574xG AY WW COLLECTOR 2,4

BASE 1

EMITTER 3

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (T_C= 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic ^ÎÎÎÎ

ÎÎÎÎ

Symbol^ÎÎÎÎ

ÎÎÎÎ

Min ^ÎÎÎ

ÎÎÎ

Typ^ÎÎÎÎ

ÎÎÎÎ

Max ^ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS (Note 2)

Collector−Emitter Sustaining Voltage MJE5740

(I_C = 50 mA, I_B = 0) MJE5742

ÎÎÎÎ

V_CEO(sus)^ÎÎÎÎ

ÎÎÎÎ

300 400

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

Vdc

Collector Cutoff Current (V_CEV = Rated Value, V_BE(off) = 1.5 Vdc)

(V_CEV = Rated Value, V_BE(off) = 1.5 Vdc, T_C = 100_C) ^ÎÎÎÎ

ÎÎÎÎ

I_CEV

ÎÎÎÎ

−

− ^ÎÎÎ

ÎÎÎ

−

− ^ÎÎÎÎ

ÎÎÎÎ

1

5 ^ÎÎÎ

ÎÎÎ

mAdc

Emitter Cutoff Current (V_EB = 8 Vdc, I_C = 0)

ÎÎÎÎ

I_EBO

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

75

ÎÎÎ

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased ^ÎÎÎÎ

ÎÎÎÎ

I_S/b ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ

See Figure 6

Clamped Inductive SOA with Base Reverse Biased ^ÎÎÎÎ

ÎÎÎÎ

RBSOAÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

See Figure 7

ON CHARACTERISTICS (Note 2)

DC Current Gain (I_C = 0.5 Adc, V_CE = 5 Vdc) (I_C = 4 Adc, V_CE = 5 Vdc)

ÎÎÎÎ

h_FE ^ÎÎÎÎ

ÎÎÎÎ

50 200

ÎÎÎ

100 400

ÎÎÎÎ

−

ÎÎÎ

−

Collector−Emitter Saturation Voltage (I_C = 4 Adc, I_B = 0.2 Adc) Collector−Emitter Saturation Voltage (I_C = 8 Adc, I_B = 0.4 Adc)

Collector−Emitter Saturation Voltage (I_C = 4 Adc, I_B = 0.2 Adc, T_C = 100_C)

ÎÎÎÎ

V_CE(sat)

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

2 3 2.2

ÎÎÎ

Vdc

Base−Emitter Saturation Voltage (I_C = 4 Adc, I_B = 0.2 Adc) Base−Emitter Saturation Voltage (I_C = 8 Adc, I_B = 0.4 Adc)

Base−Emitter Saturation Voltage (I_C = 4 Adc, I_B = 0.2 Adc, T_C = 100_C)

ÎÎÎÎ

V_BE(sat)^ÎÎÎÎ

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

2.5 3.5 2.4

ÎÎÎ

Vdc

Diode Forward Voltage (Note 3) (I_F = 5 Adc)

ÎÎÎÎ

V_f

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

SWITCHING CHARACTERISTICS

Typical Resistive Load (Table 1)

ÎÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(V_CC = 250 Vdc, I_C(pk) = 6 A I_B1 = I_B2 = 0.25 A, t_p = 25 ms, Duty Cycle v 1%)

ÎÎÎÎ

t_d

ÎÎÎÎ

−

ÎÎÎ

0.04

ÎÎÎÎ

−

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎ

t_r

ÎÎÎÎ

−

ÎÎÎ

0.5

ÎÎÎÎ

−

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎ

t_s

ÎÎÎÎ

−

ÎÎÎ

8

ÎÎÎÎ

−

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎ

t_f

ÎÎÎÎ

−

ÎÎÎ

2

ÎÎÎÎ

−

ÎÎÎ

ms

Inductive Load, Clamped (Table 1)

ÎÎÎÎÎÎÎÎ

Voltage Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(I_C(pk) = 6 A, V_CE(pk) = 250 Vdc I_B1 = 0.06 A, V_BE(off) = 5 Vdc)

ÎÎÎÎ

t_sv

ÎÎÎÎ

−

ÎÎÎ

4

ÎÎÎÎ

−

ÎÎÎ

ms

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎ

t_c

ÎÎÎÎ

−

ÎÎÎ

2

ÎÎÎÎ

−

ÎÎÎ

ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2%.

3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (V_f) of this diode is comparable to that of typical fast recovery rectifiers.

ORDERING INFORMATION

Device Package Shipping

MJE5740G TO−220

(Pb−Free)

50 Units / Rail

MJE5742G TO−220

(Pb−Free)

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VBE, BASE-EMITTER VOLTAGE (VOLTS)

t_rv I_C

V_CE

90% I_B1 t_sv

I_C(pk)

V_CE(pk) 90% V_CE(pk) 90% I_C

10% V_CE(pk) 10%

I_C(pk) 2% I_C I_B

t_fi t_ti t_c

0.1

I_C, COLLECTOR CURRENT (AMPS) 5 2000

hFE, DC CURRENT GAIN

V_CE = 5 V

1 +25°C

2 10

1000

100

10 0

T_C, CASE TEMPERATURE (°C) 0

40 120 160

60

POWER DERATING FACTOR (%)

SECOND BREAKDOWN DERATING 100

80

40

20

60 80 100 140

THERMAL DERATING

Figure 1. Power Derating Figure 2. Inductive Switching Measurements

I_C, COLLECTOR CURRENT (AMPS) 2.4

1.6

0.4

Figure 3. DC Current Gain Figure 4. Base−Emitter Voltage 2

1.2

0.8

h_FE = 20

0.2 0.5 1 2 5 10

TIME

150°C

-55°C 20

2.2

1.4 1.8

1

0.6

+150°C +25°C -55°C

TYPICAL CHARACTERISTICS

OR-EMITTER VOLTAGE (VOLTS)

1 1.4

0.8 1.2 1.6 1.8

h_FE = 20

+25°C -55°C

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REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

OUTPUT WAVEFORMS TEST CIRCUITSCIRCUIT VALUESTEST WAVEFORMS

NOTE:

PW and V_CC Adjusted for Desired I_C RB Adjusted for Desired IB1

P_W DUTY CYCLE ≤ 10%

t_r, t_f≤ 10 ns 68 1 k 0.001 mF

0.02 mF 1N493

3 270

+5 V 1 k 2N2905

47 1/2 W

100

- V_BE(off) MJE20

0 T.U.T.

I_B R_B 1N493

3 1N493

3 33

33 2N222

2 1 k

MJE21 0

V_CC +5 V

L

I_C

MR826

* V_clamp

*SELECTED FOR ≥ 1 kV V_CE

5.1 k 51

+V_CC

R_C SCOPE

-4 V D 1 R_B

TUT

COIL DATA:

FERROXCUBE CORE #6656 FULL BOBBIN (~16 TURNS) #16

GAP FOR 200 mH/20 A L_coil = 200 mH

V_CC = 30 V V_CE(pk) = 250 Vdc I_C(pk) = 6 A

V_CC = 250 V

D1 = 1N5820 OR EQUIV.

I_C

V_CE I_C(pk)

t₁ t_f t

t t₂

TIM

E V_CEOR

V_clamp

t_f

CLAMPED t₁ ADJUSTED TO OBTAIN I_C t₁≈ ^Lcoil ^(IC_pk)

V_CC t₂≈ ^Lcoil ^(IC_pk)

V_clamp

TEST EQUIPMENT SCOPE-TEKTRONICS 475 OR EQUIVALENT

+10 V 25 ms

0 - 9.2 V t_r, t_f < 10 ns DUTY CYCLE = 1%

R_B AND R_C ADJUSTED FOR DESIRED I_B AND I_C Table 1. Test Conditions for Dynamic Performance

(5)

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I

_C

− V

_CE

limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 6 is based on T

_C

= 25 _ C; T

_J(pk)

is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T

_C

≥ 25 _ C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 6 may be found at any case temperature by using the appropriate curve on Figure 1.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn−off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage−current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives the complete RBSOA characteristics.

The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.

I C, COLLECTOR CURRENT (AMPS)

V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. Forward Bias Safe Operating Area Figure 7. Reverse Bias Safe Operating Area 16

14 12

8

0 2 4 10

100 200 300 500

0 400

16

5 108

1

0.02

100

I C, COLLECTOR CURRENT (AMPS)

0.1

10 20 200 400

3

0.5

50 0.3

0.05

dc 1ms

100 ms

MJE5742 MJE5740

V_BE(off)≤ 5 V T_J = 100°C 6

CURVES APPLY BELOW RATED V_CEO

10 ms

MJE5742 MJE5740 5ms

BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE)

SECOND BREAKDOWN LIMIT

t, TIME (s)μ

7 5

2 1 0.7 0.5 10

3 0.7

0.5

0.2 0.1 0.07 1

V_CC = 250 V I_B1 = I_B2 I_C/I_B= 20

t_s t_r

t t_d

V_CC = 250 V I_B1 = I_B2 I /I = 20 0.3

RESISTIVE SWITCHING PERFORMANCE

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TO−220 CASE 221A

ISSUE AK

DATE 13 JAN 2022

SCALE 1:1

STYLE 1:

PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

STYLE 2:

PIN 1. BASE 2. EMITTER 3. COLLECTOR 4. EMITTER

STYLE 3:

PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE

STYLE 4:

PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 STYLE 7:

PIN 1. CATHODE 2. ANODE 3. CATHODE 4. ANODE STYLE 10:

PIN 1. GATE 2. SOURCE 3. DRAIN 4. SOURCE STYLE 5:

PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN

STYLE 8:

PIN 1. CATHODE 2. ANODE

3. EXTERNAL TRIP/DELAY 4. ANODE

STYLE 6:

PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 9:

PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

STYLE 11:

PIN 1. DRAIN 2. SOURCE 3. GATE 4. SOURCE

STYLE 12:

PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. NOT CONNECTED

PACKAGE DIMENSIONS

98ASB42148B DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1 TO−220

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MJE5740, MJE5742 NPN Silicon Power Darlington Transistors

NPN Silicon Power

Darlington Transistors

The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits.

• These Devices are Pb−Free and are RoHS Compliant*

• Small Engine Ignition

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

POWER DARLINGTON TRANSISTORS

8 AMPERES 300−400 VOLTS

80 WATTS

TYPICAL CHARACTERISTICS

SAFE OPERATING AREA INFORMATION

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I

− V

limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 6 is based on T

= 25 _ C; T

is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T

≥ 25 _ C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 6 may be found at any case temperature by using the appropriate curve on Figure 1.

RESISTIVE SWITCHING PERFORMANCE

PACKAGE DIMENSIONS

• ^Inverters