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Is Now

onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

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50 W Constant Voltage Output Driver

Introduction

This document describes a high Power factor CV regulation solution with fast dynamic response. The input voltage range of the reference design is 90 V

_RMS

~ 305 V

_RMS

and 50 V is regulated for secondary stage and 3.3 V is regulated for MCU power source at output terminal.

Also in this document is a general description of the FL7740, the power supply solution specification, schematic, bill of materials, and typical operating characteristics.

Table 1.

Description Symbol Value Comments

Input Voltage V_IN.MIN 90 V_AC Minimum AC Input Voltage

V_IN.MAX 305 V_AC Maximum AC Input Voltage

Output Current I_OUT.MIN 0 mA Minimum Output Current

IOUT.NOMINAL 1000 mA Nominal Output Current

Voltage VOUT.NOMINAL 50 V Nominal Output voltage

CV Deviation

Without PFO < ±3.1% Line Input Voltage Change: 90~305 VAC

< ±3% Output Current Change: 0~1000 mA CV Deviation

With PFO

< ±2.7% Line Input Voltage Change: 90~305 V_AC

< ±2.9% Output Current Change: 0~1000 mA Efficiency 120 VAC 89.0% 120 V_AC Input Voltage With 100 % load condition

277 VAC 90.8% 277 V_AC Input Voltage With 100 % load condition PF/THD 120 VAC 0.99 / 6.53% 120 V_AC Input Voltage With 25 % load condition 277 VAC 0.96 / 15.4% 277 V_AC Input Voltage With 50 % load condition Standby Power 120 VAC 270 mW 120 V_AC Input Voltage With 3.3 V/10 mA MCU winding load

277 VAC 300 mW 120 V_AC Input Voltage With 3.3 V/10 mA MCU winding load

Key Features

High Performance

• Wide Universal Input Range (90 ~ 305 V

AC

)

• Precise CV Regulation in the Steady State : < ± 3%

• CV Regulation in the Load Transient: < ± 10%

• Overshoot−less Fast HV Start Up Time (< 0.3 sec)

• Standby Power < 300 mW with 10 mW Load Condition at MCU Winding

• PF Higher than 0.9 at High−line and Half Load by PF Optimizer

• Pulse−by−pulse Current Limit

• Output Short Protection

• Output Over Voltage Protection

• Output Diode Short Protection

• Sensing Resistor Short & Open Protection

• Over Load Protection

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REFERENCE DESIGN

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SCHEMATIC

C3330n

C6

3p R8OPENR12130kR1327k D2RS1M BD11

G3SBA60

Q2

FCPF400N80Z

C171000pF C42.2n

D4

RS1M

R11

0R0 F1

MOV1

R70R27 T1

PQ2620

340uH

C2150n C168n LF240mH

COMVPF CS GND VDDGATE

BIAS NC HV

VS FL7740 R110k

R215k

R315k R6200k

R1015 C722uC81u

C9

1nR15

270kR16

240kC10100pF C19100n Np33TNA18T R251k

C20

2.2u ZD222V R14150k C1768n L11m LF124mH

R5200k R4

200k

Q51KSP42

R21

1.1k

Q52KA431 C16 220u/16V C18

22u 3.3V R26

0 D112S320

ZD1

12VC17OPEN R227.5k

R2324k NA23T C15220u/63V D6

RURP1560

R19100k MAIN+

C14470u/63V C13

470u/63V C12OPEN R17OPEN

R18OPEN

Ns19T

BIAS R9110k

R28620k NA38T MOV2

R25−1

1k

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Table 2. BILL OF MATERIAL (BOM) Item

No. Part Reference Part Number Description Manufacturer

1 F1 SS−5−2A 2 A/250 V Fuse Bussmann

2 MOV1 SVC471D−10A 10D471 Metal Oxide Varistor Samwha

3 MOV2 SVC471D−7A 7D471 Metal Oxide Varistor Samwha

4 BD1 G3SBA60 4 A / 600 V, Bridge Diode Vishay

5 R1 RC1206 JR−07103RL 10 kW SMD Resistor 3216 F 1/4W Yageo

6 R2,R3 RC1206 JR−07153RL 15 kW SMD Resistor 3216 F 1/4W Yageo

7 R4,R5,R6 RC1206 JR−07204RL 200 kW SMD Resistor 3216 F 1/4W Yageo

8 R7 MOR 1W TC R27 Metal Oxide Film Resistor RSD Type F 0.27 W/1W

R−Forming ABC

10 R10 RC0805 JR−0715RL 15 W SMD Resistor 2012 F 1/4W Yageo

11 R11 RC0805 JR−070R0RL 0R0 W SMD Resistor 2012 F 1/4W Yageo

18 R21 RC1206 JR−07112RL 1.1 kW SMD Resistor 3216 F 1/4W Yageo

19 R22 RC0805 JR−07752RL 7.5 kW SMD Resistor 2012 F 1/4W Yageo

21 R25 MOR 1W TC R511 Metal Oxide Film Resistor RSD Type F 1kW/1W

R−Forming Yageo

22 R25−1 MOR 1W TC R511 Metal Oxide Film Resistor RSD Type F 1kW/1W

R−Forming Yageo

23 R26 RC0805 JR−070R0RL 0 W SMD Resistor 2012 F 1/4W Yageo

25 C1 MPE 400V683 MPE 68 nF/400 V Sungho Electronics

26 C2 MPE 400V104 MPE 100 nF/400 V Sungho Electronics

27 C3 TF334*2*10B MTF 330 nF/400 V CARLI

28 C4 222J 630 V

29 C6 C0603C030K8GACTU 3 pF/16 V SMD Capacitor 2012 NP0 Murata

30 C7 NXH 22uF50V NXH series 22 mF/50 V Electrolytic Capacitor Samyoung

31 C8 GRM185D71A105KE36# 1 uF/16 V SMD Capacitor 2012 Murata

32 C9 GRM1881X1E102JA01# 1 nF/16 V SMD Capacitor 2012 Murata

33 C10 C0603C101K8GACTU 100 pF/16 V SMD Capacitor 2012 Murata

34 C11 SCF2E102M14DW7 Y cap 1000pF SAMWHA

Capacitor 35 C13,C14 KMG 470 mF / 63 V 470 mF / 63 V, Electrolytic Capacitor Samyoung 36 C15 KMG 220 mF / 63 V 220 mF / 63 V, Electrolytic Capacitor Samyoung

37 C16 NXH 220 mF / 16 V 220 mF / 16 V, Electrolytic Capacitor Samyoung

39 C18 NXH 22uF50V NXH series 22 mF/50 V Electrolytic Capacitor Samyoung

41 C20 NXH 2.2uF50V NXH series 2.2 mF/50 V Electrolytic Capacitor Samyoung

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Table 2. BILL OF MATERIAL (BOM) (continued) Item

No. Part Reference Part Number Description Manufacturer

42 LF1 CV613240H 24 mH Common mode inductor TNC

43 LF2 B82733F 40 mH Common Inductor EPCOS

44 D2 S320 200 V / 3 A Schottky Rectifier ON Semiconductor

45 D4 RS1M 1000 V / 1.0 A SMA package fast recovery diode ON Semiconductor

46 D6 RURP1560 600 V / 15 A, Ultrafast Rectifier ON Semiconductor

47 D112 S320 200 V / 3 A Schottky Rectifier ON Semiconductor

48 Q2 FCPF400N80Z 800 V, 14 A, 400 mW N−channel ON Semiconductor

49 ZD1 MM3Z12VB 12 V, SOD−323 ON Semiconductor

50 ZD2 1N4748 22 V, DO−41 ON Semiconductor

51 Q51 KSP42 NPN Epitaxial Silicon Transistor VCEO 300 V ON Semiconductor

52 Q52 KA431 Programmable shunt regulator ON Semiconductor

53 U1 FL7740 Constant Voltage Primary−Side−Regulation PWM con-

troller for Power factor Correction ON Semiconductor

TRANSFORMER DESIGN

Figure 2. Pin Configuration PQ 2620

2 NP1 1

3 NP2 4 5 NA1

NA2

N_A3 NS

12 119

108

10

Figure 3. Transformer Winding Structure

NP1

Ñ Ñ Ñ Ñ

ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ

Ó

Start Barrier Tape

Ñ

2 mm Barrier

ÑÑÑÑÑÑÑÑÑÑÑÑ

NA1 2mm Barrier 3 mm Barrier

Ñ Ñ

ÓÓ

ÓÓ ÓÓ

ÓÓ Ó

Ó ÓÓ

ÓÓ

NS1

ÓÓ

ÓÓ Ó

Ó Ó

Ó ÓÓ

ÓÓ ÓÓ

ÓÓ Ó

Ó

2mm Barrier

ÓÓ

ÓÓ ÓÓ

ÓÓ

2mm Barrier

Ñ

ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ

NP2

3.5 mm Barrier

Ñ Ñ

ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ

NA2 3.5 mm Barrier

3 mm Barrier

Ñ

Ñ Ñ

Ñ ÑÑ

ÑÑ Ñ

Ñ Ñ

Ñ ÑÑ

ÑÑ Ñ

Ñ Ñ

Ñ

3 mm Barrier

NA3

Table 3. WINDING SPECIFICATIONS

No. Winding Pin (S " F) Wire Turns Winding Method

1 N_P1 3 ³ 2 0.33φ 19 Ts Solenoid Winding

2 Insulation: Polyester Tape t = 0.025 mm, 3−Layer

3 N_A1 4 ³ 5 0.2φ 8 Ts Solenoid Winding

5 N_S 12 ³ 11 0.4φ (TIW) 19 Ts Solenoid Winding

7 NP2 2 ³ 1 0.33φ 14 Ts Solenoid Winding

9 N_A2 9 ³ 10 0.2φ 3 Ts Solenoid winding

11 N_A3 9 ³ 10 0.2φ 8 Ts Solenoid winding

(6)

Table 4. ELECTRICAL CHARACTERISTICS

Pins Specifications Remark

Inductance 1 – 3 340 uH ±10% 60 kHz, 1 V

Leakage 1 – 3 7 mH 60 kHz, 1 V, Short All Output Pins

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

PERFORMANCE

Table 5. TEST CONDITION & EQUIPMENT LIST Ambient Temperature T_A = 25°C

Test Equipment AC Power Source: PCR500L by Kikusui Power Analyzer: PZ4000000 by Yokogawa Electronic Load: PLZ303WH by KIKUSUI Multi Meter: 2002 by KEITHLEY, 45 by FLUKE Oscilloscope: 104Xi by LeCroy

Thermometer: Thermal CAM SC640 by FLIR SYSTEMS

Startup

Figure 8 through Figure 9 shows the overall startup performance at full load and no load condition. The output voltage is increased up to 90% of rated output voltage at least 0.28 s after the AC input power switch turns on for input voltage 90 V

AC

condition. Once output voltage reaches

close to the regulation level, gain control is smoothly changed to integration gain without output voltage overshoot and undershoot at the input voltage range from 90 to 305 V

_AC

. CH1: V

_IN

(100 V / div), CH2: COMV (1 V / div), CH3: VDD (10 V / div), CH4: V

_OUT

(10 V / div), Time Scale: (100 ms / div), Load: Electrical CC load.

Figure 4. V_IN = 90 V_AC / 60 Hz

0.28 s Iout = 1000 mA 0.26 s Iout = 0 mA

Figure 5. V_IN = 305 V_AC / 60 Hz

0.1 s Iout = 1000 mA 0.1 s Iout = 0 mA

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Fast Transient Response

Figure 10 through Figure 11 shows fast load transient performance. When output load is changed from full to no load, output voltage is managed less than + 10% of rated output voltage and when output load is changed from no to full load, output voltage is controlled higher than −10% of

output voltage at the input voltage range from 90 to 305 V

_AC

with dynamic control function.

CH1: GATE (10 V / div), CH2: V

_IN

(100 V / div), CH3:

V

_OUT

(10 V / div), CH4: I

_OUT

(500 mA / div), Time Scale:

(50 ms / div), Load: Electrical load.

Figure 6. V_IN = 90 V_AC / 60 Hz Full to no load

55 V No to full load

45 V Iout = 1000 mA

Iout = 0 mA Iout = 0 mA

Iout = 1000 mA

Figure 7. V_IN = 305 V_AC / 60 Hz

55 V Full to no load No to full load

45 V Iout = 1000 mA

Iout = 0 mA Iout = 0 mA

Iout = 1000 mA

Figure 12 shows line transient performance. When input voltage is changed from 120 to 230 V

_AC

abruptly, output voltage is controlled lower than + 10% of rated output voltage. And when input voltage is changed from 230 to

120 VAC abruptly, output voltage is managed higher than –10% of rated output voltage. CH1: V

_IN

(100 V / div), CH2:

COMV (1 V / div), CH3: GATE (10 V / div), CH4: V

_OUT

(10 V / div), Time Scale: (20 ms / div), Load: Electrical load

Figure 8. I_OUT = 1000 mA 54.7 V

47.4 V 120 VAC

230 VAC

120 VAC

230 VAC

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Power Factor Optimizer Function

Figure 13 shows power factor and THD comparison data between without PF optimizer and with PF optimizer.

Without PF optimizer function, power factor is lower than 0.84 at 230 VAC input voltage with 25% load condition.

With PF optimizer function, power factor is significantly improved up to 0.93. While power factor is improved, it

shows excellent THD performance, less than 20% even at 25% load condition at 230 VAC input voltage with PF optimizer function. In order to activate PF optimizer function, PF pin should be set higher than 1.5 V by adjusting PF resistors value to meet user’s target as explained in datasheet

Figure 9. Power Factor & Total Harmonic Distortion Comparison

0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1

25 50 75 100

90Vac 120Vac 230Vac 277Vac 305Vac

0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1

25 50 75 100

0 5 10 15 20 25 30

25 50 75 100

0 5 10 15 20 25 30

25 50 75 100

90Vac 120Vac 230Vac 277Vac 305Vac Load condition [%]

Load condition [%]

PF PF

THD[%]

0.84

0.93

19.4 20

0.09 PF improvement !!

Without PF optimizer With PF optimizer

Constant Voltage Regulation Performance

Figure 14 shows excellent constant output voltage regulation result from no to full load with 3.3 V/ 20 mA load

for MCU at secondary auxiliary winding. Even at no load condition with MCU power consumption, CV deviation is less than ± 3.1% regardless of PF optimizer function.

Figure 10. V_IN = 230 V_AC / 50 Hz

0 10 20 30 40 50 60 70

0 200 400 600 800 1000 1200

0 10 20 30 40 50 60 70

0 200 400 600 800 1000 1200

Without PF optimizer With PF optimizer

VOUT [V] VOUT [V]

IOUT [mA] IOUT [mA]

+ 3.1 % + 2.9 %

(9)

Table 6. CONSTANT VOLTAGE REGULATION BY LOAD CHANGE (90 ~ 305 V_AC) WITH PFO Input Voltage

Output current [mA]

Tolerance

1000 750 500 250 100 10 0

90 V_AC[60 Hz] 49.7 V 49.9 V 49.9 V 49.9 V 49.9 V 51.6 V 52.7 V ± 2.9 % 120 V_AC[60 Hz] 49.9 V 49.9 V 49.9 V 49.9 V 49.9 V 50.9 V 51.3 V ± 1.4 % 230 V_AC[60 Hz] 49.8 V 49.8 V 49.9 V 49.9 V 49.9 V 50.3 V 51.5 V ± 1.7 % 277 V_AC[60 Hz] 49.9 V 49.9 V 49.9 V 49.9 V 49.9 V 50.6 V 49.9 V ± 0.9 % 305 VAC [60 Hz] 49.9 V 50.0 V 50.0 V 50.0 V 50.0 V 49.6 V 50.6 V ± 1.0 % Table 7. CONSTANT VOLTAGE REGULATION BY LINE CHANGE (0 ~ 1000 mA) WITH PFO

Output Current

Input Voltage [V_AC]

Tolerance

90 120 230 277 305

1000 mA 49.7 V 49.9 V 49.8 V 49.9 V 49.9 V ± 0.2 %

750 mA 49.9 V 49.9 V 49.8 V 49.9 V 50.0 V ± 0.2 %

500 mA 49.9 V 49.9 V 49.9 V 49.9 V 50.0 V ± 0.1 %

250 mA 49.9 V 49.9 V 49.9 V 49.9 V 50.0 V ± 0.2 %

100 mA 49.9 V 49.9 V 49.9 V 49.9 V 50.0 V ± 0.5 %

10 mA 51.6 V 50.9 V 50.3 V 50.6 V 49.6 V ± 2.0 %

0 mA 52.7 V 51.3 V 51.5 V 49.9 V 50.6 V ± 2.7 %

Efficiency

Figure 15 shows efficiency data at the input voltage range from 90 to 305 V

_AC

from 25 to 100% load condition. System

efficiency is over 89% from 120 ~ 305 V

AC

with 100% load condition. And efficiency is over 89% from 120 ~ 305 V

AC

over half load condition as well.

Figure 11. Efficiency by Line Voltage & Load Condition Change

Eff [%]

85.00 86.00 87.00 88.00 89.00 90.00 91.00 92.00

90 Vac 120 Vac 230 Vac 277 Vac 305 Vac

100% load 75% load 50% load 25% load

Table 8. EFFICIENCY BY LOAD CHANGE WITH INPUT VOLTAGE VARIANCE Load Condition

90 120 230 277 305

1000 mA 87.3 % 89.0 % 90.5 % 90.8 % 90.8 %

750 mA 88.4 % 89.4 % 90.5 % 90.7 % 90.6 %

500 mA 88.3 % 89.1 % 89.9 % 90.1 % 90.2 %

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Standby Power

Figure 16 shows standby power performance with no load condition at different MCU load cases. With no load condition at MCU winding output, standby power is lower

than 150 mW at the input range from 90 to 305 VAC. With 20 mA load condition at MCU winding output, standby power is lower than 410 mW

Figure 12. System Efficiency 0

100 200 300 400 500 600

90 Vac 120 Vac 230 Vac 277 Vac 305 Vac

IMCU 0 mA IMCU 10 mA IMCU 20 mA

Standby Power [mA]

Table 9. STANDBY POWER WITH DIFFERENT MCU WINDING LOAD Input Voltage

MCU Winding Current

0 mA 10 mA 20 mA

90 V_AC[60 Hz] 133 mW 280 mW 400 mW

120 V_AC[60 Hz] 120 mW 270 mW 360 mW

230 V_AC[60 Hz] 113 mW 300 mW 350 mW

277 VAC [60 Hz] 124 mW 300 mW 400 mW

305 V_AC[60 Hz] 132 mW 340 mW 410 mW

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Output Short Protection (OSP)

Figure 17 shows waveforms for the protection and AR operation when main load terminal is shorted. When the main load terminal short occurs and then VS voltage reaches lower than 0.7 V for 35 ms, OSP is triggered and the controller then shuts down the switching MOSFET. After

3 s, the Startup sequence reinitiates. This behavior lasts until the fault condition is removed. Systems can restart automatically when normal condition resumes at least 3 seconds. CH1: GATE (10 V / div), CH2: V

IN

(100 V / div), CH3: VDD (5 V / div), CH4: V

OUT

(10 V / div), Time Scale:

(1 s / div), Load: Electrical load

Figure 13. Output Short Protection

3 sec AR time 3 sec AR time

[Output short during operation ]

[3 sec AR operation]

[Output short at startup period ]

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Over Load Protection

Figure 18 shows waveforms for the protection and AR operation when output is over loaded. When pulse−by−pulse current limit event is happened for 60 half line cycles consecutively, OLP is triggered and the controller then shuts down the switching MOSFET. After 3 s, the Startup

sequence reinitiates. This behavior lasts until the fault condition is removed. Systems can restart automatically when normal condition resumes at least 3 seconds. CH1:

VDD (10 V / div), CH2: V

CS

(500 mV / div), CH3: GATE (10 V / div), CH4: I

OUT

(10 V / div), Time Scale: (100 ms / div), Load: Electrical load

Figure 14. Over Load Protection Over load condition

Counts:60 Zero Cross points

3 sec AR time 3 sec AR time

(13)

Sensing Resistor Short Protection

Figure 19 through Figure 20 shows waveforms for the protection when sensing resistor is shorted. If V

_CS

doesn’t reach over V

_CS−SRSP

(0.075 V) at the initial first switching operations during the Startup period, SRSP is triggered and the controller then shuts down the switching MOSFET.

After 3 s, the Startup sequence reinitiates. This behavior lasts until the fault condition is removed. Systems can restart automatically when normal condition resumes at least 3 seconds. CH1: V

IN

(100 V / div), CH2: V

CS

(500 mV / div), CH3: V

GATE

(10 V / div), Time Scale: (10 ms / div), Load: Electrical load

Figure 15. V_IN = 90 V_AC / 60 Hz 0.075 V

SRSP Level

Figure 16. V_IN = 305 V_AC / 60 Hz 0.075 V

SRSP Level

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Output Diode Short Protection

Figure 21 shows a waveform for the protection operation when the secondary diode is shorted. V

_CS

is monitored during the gate turn−on time to detect over−current except for LEB time. Once V

_CS

goes higher than V

_CS−OCP

(1.8 V) after the LEB time, OCP is triggered and the controller then

shuts down the switching MOSFET. I

_peak

amplitude can be adjusted by using different magnetizing inductance and input voltage condition. CH1: GATE (5 V / div), CH2: V

_CS

(500 mV / div), CH3: VDD (10 V / div), Time Scale:

(100 ms / div), Load: Electrical load

Figure 17. Output Diode Short Protection Output diode short

1.8 V OCP level

(15)

Operating Temperature

The results were measured using the full load conditions after 30 minutes burn−in.

Figure 18. V_IN = 90 V_AC

90 Vac TOP side

Transformer 69℃

MOSFET Bridge diode 61℃

64℃

Secondary diode 63℃

90 Vac Bottom side

Snubber 87℃

FL7740 IC 63℃

Figure 19. V_IN = 90 V_AC

305 Vac TOP side

Transformer 68℃

MOSFET Bridge diode 59℃

44℃

Secondary diode 67℃

305 Vac Bottom side

FL7740 IC 58℃

Snubber 83℃

Figure 20. V_IN = 305 V_AC Figure 21. V_IN = 305 V_AC

Table 10. Surge Test

Condition Surge Note Remark

Original EVB 3.4 kV Only fuse is damaged No issue at IC operation Changed Fuse rating from 2 A to 3.15 A 5.4 kV Only fuse is damaged No issue at IC operation Changed Fuse rating from 2 A to 10 A &

Added 26 V TVS diode at GATE pin 7.8 kV Fuse and MOV1 is damaged No issue at IC operation

(16)

Electromagnetic Interference (EMI)

All measurements were conducted in observance of EN55022 criteria. The results were measured with FL7760 evaluation board using rated LED loads at output terminal

after 10 minutes burn−in. If it needs to be checked for only FL7740 evalutaion board’s EMI performance, C17 (Y−cap) should be changed from 1000 to 4700 pF.

[120Vac Live] [120Vac Neutral]

Figure 22. V_IN [120 V_AC, Live]

[230Vac Live] [230Vac Neutral]

Figure 23. V_IN [230 V_AC, Live]

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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