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(1)

2012 International Workshop on EUV and Soft X-Ray Sources

October 11th, 2012, UCD, Dublin, Ireland

Takeshi Higashiguchi

1

1

Utsunomiya University

2

HiLASE Project, Institute of Physics AS, Czech Republic

3

University College Dublin (UCD)

Akira Endo

2

and Gerry O'Sullivan

3

Session 11, S12

Highlights from a Recent BEUV

Source Workshop & Activities

(2)

JSAP, JPS, LSJ Ad-hoc workshop

Sep. 11

th

: JSAP @ Matsuyama

Sep. 18

th

: JPS@Yokohama

(3)
(4)

Ad-hoc EUV & BEUV workshop

On Sep. 26, half-day

(5)
(6)
(7)

Ad-hoc EUV & BEUV workshop

(8)

Fundamental property of BEUV sources

0

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%

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a

t

6

.7

n

m

i

n

0

.6

%

B

W

a

n

d

2

p

s

r

Laser intensity (W/cm

2

)

ns

ps

fs

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o

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v

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rs

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%

)

a

t

6

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n

m

i

n

0

.6

%

B

W

a

n

d

2

s

r

10

9

10

10

10

11

Laser intensity (W/cm

2

)

10

12

I . / D I

0

. /e

n`

`

c

S L

APL

99, 191502 (2011).

0

50

100

150

200

250

300

350

5.5 6

6.5 7

7.5 8

8.5 9

9.5 10

In

te

n

s

it

y

(

a

rb

.

u

n

it

s

)

Wavelength (nm)

APL

99, 231502 (2010).

APL

100, 061118 (2012).

low density target

DPP

CO

2

LPP

ps LPP

0

50

100

150

200

250

300

5.5

6

6.5

7

7.5

8

8.5

9

9.5

10

In

te

n

s

it

y

(

a

rb

.

u

n

it

s

)

Wavelength (nm)

1064 nm

532 nm

355 nm

Laser

10.1117/2.1201109.003765

Shorter-wavelength extreme-UV

sourcesbelow 10nm

Takeshi Higashiguchi, Takamitsu Otsuka, Noboru Yugami, Weihua Jiang, Akira Endo, Padraig Dunne, Bowen Li, and Gerry O’Sullivan

A next-generation laser-pr oduced plasma system based on rare-earth targets generates strong resonant line emissions at 6.5–6.7nm.

In recent years, laser-produced dense plasmas have been attract-ing attention as high-ef ficiency, high-power sources of extreme UV (EUV) radiation. Sour ces with a wavelength less than 10nm are of particular interest for use in next-generation semicon duc-tor lithography and for other applications, such as materials sci-ence and biological imaging. Manufactur er Cymer, for example, has already shippe d a high-average-power 13.5nm engineer-ing prototype to a semiconductor device company that would enable high-volume production at a power level of 80W.1 This source optimizes unresolved transition array (UTA) emission of highly ionized tin for high conversion efficiency (CE) of the in-put laser energy to the in-band (i.e., a bandwidth of about 2% around 13.5nm) EUV energy. Full recovery of the injected fuel is realized through ion deflection in a magnetic field. Low-d ensity targets like tin further enable suppression of satellite (i.e., peri-pheral) emission. Full ionization, which helps to contr ol debris and thus avoid damage to the sour ce mirror, is attained with short-pulse CO2 laser irradiation.

Recently, the possibility of switching to an even shorter EUV wavelength of 6.Xnm was suggested. 2 In fact, 6.Xnm beyond-EUV (BEUV) emission can be coupled with a molyb-denum/ bor on carbide (Mo/ B 4C) or lanthanum/ bor on carbide (La/ B 4C) multilayer mirror whose reflectivity is currently 40% at 6.5–6.7nm (theor etical maxim um >70%). The UTA emission exploited in tin is scala ble to shorter wavelengths. The rare-earth element gadolinium (Gd) has a CE similar to that of tin, though at a higher plasma temperatur e, within a narrow spectral range center ed near 6.7nm. However, no fundamental research has been reported on spectral behavior at 6.7nm and its depen-dence on various parameters, such as laser wavelength, initial target density, and dual-laser -pulse delay. EUV emission at this level could be tuned for use with a Mo/ B 4C multi layer mirror to power practical sources.

Figur e 1. Electron temperatur e dependence of the gadolinium (Gd) ion

population according to the steady-state collisional-radiative model (a). The weighted oscillation strength (gf) spectra of the resonant lines for each contributing ion stage are shown in (b) and (c).

In a proof-of-principle experiment, we produced a source with peak emission around 6.5–6.7nm. 3, 4 gadolinium and terbium (another rare-earth element) produce strong narrow-band emis-sion, again attributable to thousands of resona nce lines that

Continued on next page

APL

97, 231503 (2010).

0

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0.8

1.0

1.2

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5.5

6

6.5

7

7.5

8

8.5

9

In

te

n

s

it

y

(

a

rb

.

u

n

it

s

)

Wavelength (nm)

5

5.5

6

6.5

7

7.5

8

8.5

9

Wavelength (nm)

Gd

Tb

APL

97, 111503 (2010).

Self-absorption

Spectral structure

Peak wavelength

0

0.1

0.2

0.3

0.4

0.5

0.6

-100

-50

0

50

100

150

200

Pulse separation time (ns)

C

o

n

v

e

rs

io

n

e

ff

ic

ie

n

c

y

(

%

)

a

t

6

.7

n

m

i

n

0

.6

%

B

W

a

n

d

2

p

s

r

Laser intensity

Prepulse: 1.0 x 10

11

W/cm

2

Main pulse: 5.6 x 10

12

W/cm

2

APL

100, 141108 (2012).

APL

101, 013112 (2012).

(9)

Japan activities for 6.X nm

Theoretical

from Dr. Sasaki

Experimental

(10)

• Optimization in limited parameter space shows Mo

plasma with T

e

=43eV, n

i

=10

19

/cm

3

, and plasma

size=0.3mm, 10

6

W/

p

str of EUV power at 6.5nm

(0.5%BW) is obtained with spectral efficiency of 1%.

- LTE is assumed.

- Total output power for 10ns, 10kHz pumping

is 100W.

(11)

Rotating drum cryogenic Xe target

Laser

EUV

2mm

Laser

Liq. N2

Cross-section view

(10 cm)

Drum system

side view

0~1000rpm

(12)

Measured CE at 6.7nm with 0.6%BW

Rest target

laser pulse 0.8J/10ns

lens position 0mm

Rotating target

Ref. S.Amano et al.,”Laser-plasma extreme ultraviolet source at 6.7nm using a

rotating cryogenic Xe target”, published online in Appl. Phys. B .

0.15%

@I

L

=4x10

12

W/cm

2

(E

L

=0.8J)

0.08%@I

L

=1.5x10

10

W/cm

2

(13)

LHD & VUV spectrometer @NIFS

Type

Schwob-Fraenkel 2 m grazing incidence spectrometer

Grooves

133.6 or 600 grooves/mm

Wavelength

1 – 35 nm

Detector

2 MCPs + Phosphor + Photodiode Array

Resolution

~ 0.01 nm

3.6 m

13.5 m

Large Helical Device (LHD)

@NIFS

Plasma

TESPEL

(pellet)

injector

Spectrometer

"SOXMOS"

(14)

LHD discharge with Gd pellet injection

4.5 s

5.1 s

5.9 s

Gd pellet

injection

C. Suzuki et al., J. Phys. B: At. Mol. Opt. Phys. 45, 135002

(2012).

(15)

Different EUV spectra from Gd ions in

LHD

T

max

2.2 keV

T

max

0.24 keV

T

max

1.0 keV

T

e

n

e

T

e

n

e

T

e

n

e

Narrowed UTA

UTA

Discrete

hollo

w

plasm

a

Ni

-l

ik

e

Ni

-l

ik

e

Cu

-l

ik

e

Cu

-l

ik

e

Ag

-l

ik

e

Ag

-l

ik

e

Pd

-l

ik

e

?

?

?

?

(16)
(17)

Typical EUV Spectrum

onsists of:

Lines (bound-bound transitions), because of high density, lines from high n

states are usually not seen

Recombination Radiation (bound-free transitions) which scales as



4

where



is the average ionic charge

Bremsstrahlung (free-free)

For an optically thin plasma: P

lines

:P

recomb

:P

brem

= 100:10:1

In some cases lines cluster together to form a UTA (unresolved transition array)

(18)

Energy levels of Gd

16+

- Gd

27+

computed

with the FAC code including CI.

Problem, low ion stages contain

open 4f (and 5p) subshells, difficult

to calculate.

FAC code calculations for Gd

Calculations

more complex

than for Sn

because of

open 4f

subshell in

ions lower

than 18+

In low stages,

4f, 5p and 4f,

5s level

crossings give

rise to very

complex

interacting

configurations

(19)

Δn = 1 3d-4f and 3d-4p UTA emission from Zr

Spectral behavior of Zr

plasmas as a function of laser

laser intensity

Resonant 3d

4f (1) and

3d

4p transitions as well as

satellite lines from 3d

n-1

4s4f

3d

n-2

4s4f (2)

(20)

continuity equation

momentum equation

ion energy equation

electron energy equation

multi-group diffusion approximation

Radiation heating term

Laser heating term

イ オン 熱伝導

電子熱伝導

イオンー電子 

温度緩和

pdV work

pdV work

輻射

レ ーザー

レ ーザー

状態方程式で 与え ら れる

流体

原子過程計算で与え ら れる

(21)
(22)
(23)
(24)
(25)
(26)

Punch-out

is

a

new method to supply plasma sources for

6.Xnm

BEUV light generation.

26

It is difficult to generate Gadolinium droplets because melting temperature of

Gd is

“1585K”

that is much higher than

“595K”

of tin’s melting temperature.

glass substrate

Drive Laser

(CO

2

Laser)

Punch-out target supply method

Punch-out Laser

(Nd:YAG Laser)

EUV emission

Gadolinium target

Frequency:

10kHz

Punch-out laser energy:

under 100mJ

Flying speed:

over 100m/s

Flying distance:

over 10mm

(27)

Delay 1µs

Delay 3µs

Delay 5µs

Energy

:70mJ

Pulse width

:300ps

Laser Intensity

:7×10

9

W/cm

2

Target thickness

:3µm

1mm

27

(28)

飛翔速度目標値

約100m/s以上

パルス幅による

飛翔速度の違い

パンチアウトレーザー

エネルギー目標値

約100mJ/shot以下

パルス幅4~5nsの時のほうが飛翔速度が速いのは

レーザー強度が高くなったためだと考えられる

28

パルス幅が短いほうが

飛翔速度

が速くなると考えられる

ILE OSAKA

(29)

レーザー学会第432回研究会 2012年9月26日 足利

0

50

100

150

200

2

4

6

8

10

12

10600nm

1550nm

6.7nm

13.5nm

Max

imum

Pho

ton

En

e

rgy

[e

V

]

Electron Beam Energy [MeV]

2.88MeV

For Er (1550nm)

7.2MeV

For CO

2

(30)

レーザー学会第432回研究会 2012年9月26日 足利

早稲田大学におけるCO2レーザー蓄積共振器開発の様子

CWのレーザー光の蓄積実証試験を行っている

Exp. Setup Cavity Setup 4M平面

CO2レーザー

Cavity

(31)

レーザー学会第432回研究会 2012年9月26日 足利

10um用Cavityからの透過光プロファイル

>ほぼTEM00の綺麗なプロファイル。

波打っているのはプロファイラの特性

実際に10umの光の蓄積が可能であること、

市販のコンポーネントを組み合わせても50倍程度の増大率は得られること

を確認した。

(32)

Experimental set-up

SXRL Source

Wavelength:

λ= 13.9 nm (E = 89.2 eV)

Pulse Duration:

∆t = 7 ps

Output Energy: 200–300 nJ/shot

Total Energy of SXRL beam

At Sample Surface: 48–72 nJ/shot

Average Fluence: 1 - 100 mJ/cm

2

(33)

Images of X-ray laser spots,

obtained on the LiF

detector:

+ 10

+ 9

+ 8

+ 8

+ 7

+ 6

+5

+4

+3

+2

+1

0

-1

-2

20

x

-

7

Z(mm) = - 3

- 4

- 5

- 6

-

8

-

9

- 10

20

x

A.Ya. Faenov, et al., Optic Letters 34, 941

(2009)

EUV laser spot patterns are recorded

by LiF detector.

(34)

XRL (EUV) laser ablation for LiF and Si

The result shows that the ablation threshold (fluence) for the SXRL is smaller

by 2-3 orders of magnitude compared with that of IR laser.

0 . 0 0 1

0 . 0 1

0 . 1

1

1 0

4 6 8

1

2

4 6 8

1 0

2

4 6 8

1 0 0

2

Ablation

thre

shold

(J

/cm

2

)

1053nm

2ns pulse

1ps

0.4ps pulse

46.9nm XRL

1.7ns (Italy)

LiF

Si

JAEA (13.9 nm, 7

ps)

photon energy (eV)

EUV XFEL

(0.3ps, 61.8nm)

(35)

JSAP, JPS, LSJ Ad-hoc workshop

Sep. 11

th

: JSAP @ Matsuyama

Sep. 18

th

: JPS@Yokohama

(36)
(37)

Figur e 1. Electron temperatur e dependence of the gadolinium (Gd) ion population according to the steady-state collisional-radiative model (a).

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