IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co−packaged reverse recovery diode with a low forward voltage.
Features
• Low Saturation Voltage Resulting in Low Conduction Loss
• Low Switching Loss in Higher Frequency Applications
• Soft Fast Reverse Recovery Diode
• 5 m s Short Circuit Capability
• Excellent Current versus Package Size Performance Density
• This is a Pb−Free Device
Typical Applications• White Goods Appliance Motor Control
• General Purpose Inverter
• AC and DC Motor Control
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage VCES 650 V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
30 15
A
Pulsed collector current, Tpulse limited by TJmax
ICM 120 A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
30 15
A
Diode pulsed current, Tpulse limited by TJmax
IFM 120 A
Gate−emitter voltage VGE $20 V
Power dissipation
@ TC = 25°C
@ TC = 100°C
PD
117 47
W
Short circuit withstand time
VGE = 15 V, VCE = 400 V, TJv +150°C
tSC 5 ms
Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to
+150 °C Lead temperature for soldering, 1/8” from
case for 5 seconds
TSLD 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
TO−220 CASE 221A
STYLE 9
15 A, 650 V V
CEsat= 1.5 V
Device Package Shipping ORDERING INFORMATION
NGTB15N60S1EG TO−220 (Pb−Free)
50 Units / Rail www.onsemi.com
MARKING DIAGRAM G
E C
15N60S1G AYWW
A = Assembly Location
Y = Year
WW = Work Week G = Pb−Free Package
G CE
C
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction to case, for IGBT RqJC 0.5 °C/W
Thermal resistance junction to case, for Diode RqJC 2.3 °C/W
Thermal resistance junction to ambient RqJA 60 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited
VGE = 0 V, IC = 500 mA VGE = 0 V, IC = 500 mA, TJ = −40°C
V(BR)CES 650
−
720 660
−
− V Collector−emitter saturation voltage VGE = 15 V , IC = 15 A
VGE = 15 V , IC = 15 A, TJ = 150°C
VCEsat 1.3 1.55
1.5 1.75
1.7 1.95
V Gate−emitter threshold voltage VGE = VCE , IC = 250 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate−emitter
short−circuited
VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 650 V, TJ = 150°C
ICES −
− 10
−
−
200 mA
Gate leakage current, collector−emitter short−circuited
VGE = 20 V, VCE = 0 V IGES − − 100 nA
Forward Transconductance VCE = 20 V, IC = 15 A gfs − 10.1 − S
DYNAMIC CHARACTERISTIC Input capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Cies − 1950 −
Output capacitance Coes − 70 − pF
Reverse transfer capacitance Cres − 42 −
Gate charge total
VCE = 480 V, IC = 15 A, VGE = 15 V
Qg − 88 −
Gate to emitter charge Qge − 16 − nC
Gate to collector charge Qgc − 42 −
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD Turn−on delay time
TJ = 25°C VCC = 400 V, IC = 15 A
Rg = 22 W VGE = 0 V / 15 V
td(on) − 65 −
ns
Rise time tr − 28 −
Turn−off delay time td(off) − 170 −
Fall time tf − 140 −
Turn−on switching loss Eon − 0.550 −
Turn−off switching loss Eoff − 0.350 − mJ
Total switching loss Ets − 0.900 −
Turn−on delay time
TJ = 150°C VCC = 400 V, IC = 15 A
Rg = 22 W VGE = 0 V / 15 V
td(on) − 65 −
ns
Rise time tr − 28 −
Turn−off delay time td(off) − 180 −
Fall time tf − 260 −
Turn−on switching loss Eon − 0.650 −
Turn−off switching loss Eoff − 0.600 − mJ
Total switching loss Ets − 1.250 −
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 15 A
VGE = 0 V, IF = 15 A, TJ = 150°C
VF −
−
1.65 1.75
1.85
− V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Unit
DIODE CHARACTERISTIC Reverse recovery time
TJ = 25°C IF = 15 A, VR = 200 V
diF/dt = 200 A/µs
trr − 270 − ns
Reverse recovery charge Qrr − 350 − nc
Reverse recovery current Irrm − 5 − A
Reverse recovery time
TJ = 125°C IF = 15 A, VR = 200 V
diF/dt = 200 A/µs
trr − 350 − ns
Reverse recovery charge Qrr − 1000 − nc
Reverse recovery current Irrm − 7.5 − A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics VCE, COLLECTOR−EMITTER VOLTAGE (V)
8 7 6 4
3 2 1 0 0 10 20 30 40 50 60
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
8 6
5 4 3 2 1 0 0 10 20 30 40 50 60 70
12 14
10 8 6 4 2 0 0 10 20 30 40 50 60
Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
130 40
10
−20
−50 0 0.5 1.0 1.5 2.0 2.5 3.0
90 80 60
50 40 20
10 0 10 100 1000 10,000
IC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V) CAPACITANCE (pF)
5
VGE = 7 V VGE = 9 V
VGE = 11 V VGE = 17 V to 13 V
TJ = 25°C
VCE, COLLECTOR−EMITTER VOLTAGE (V) 8 7 6 4
3 2 1 0 0 10 20 30 40 50 60
IC, COLLECTOR CURRENT (A)
5
VGE = 7 V VGE = 9 V VGE = 11 V
7 VGE = 7 V VGE = 9 V VGE = 11 V
150°C
−40°C TJ = 25°C
70 160
IC = 30 A
IC = 15 A IC = 10 A IC = 5 A
30 70 100
Cies
Coes Cres VGE = 17 V to 13 V TJ = 150°C
VGE = 17 V to 13 V
TJ = −40°C
100
TYPICAL CHARACTERISTICS
Figure 7. Diode Forward Characteristics VF, FORWARD VOLTAGE (V) 0
35
IF, FORWARD CURRENT (A) 30 25 20 15 10 5 0
0.5 1 1.5 2 2.5
Figure 8. Typical Gate Charge QG, GATE CHARGE (nC)
90 70
60 40
30 20 10 0 20
VGE, GATE−EMITTER VOLTAGE (V)
50 80 100
VCES = 480 V 15
10
5
0 150°C
−40°C TJ = 25°C
20 16
8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
12 24 28 32
VCE = 400 V VGE = 15 V TJ = 150°C Rg = 22 W
Eoff Eon
160
Figure 9. Switching Loss vs. Temperature TJ, JUNCTION TEMPERATURE (°C)
140 120 100 80 60 40 20 0 1 10 100 1000
Figure 10. Switching Time vs. Temperature
Figure 11. Switching Loss vs. IC
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A) 140 120 100 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.6 0.7
28 20
16 8
1 10 100 1000
Figure 12. Switching Time vs. IC IC, COLLECTOR CURRENT (A)
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
160 VCE = 400 V
VGE = 15 V IC = 15 A Rg = 22 W
tf
tr td(off) td(on) 0.5
VCE = 400 V VGE = 15 V IC = 15 A Rg = 22 W
Eoff Eon
12 24 32
tf
tr td(off) td(on)
VCE = 400 V VGE = 15 V TJ = 150°C Rg = 22 W
TYPICAL CHARACTERISTICS
Figure 13. Switching Time vs. Rg Rg, GATE RESISTOR (W)
SWITCHING LOSS (mJ)
75 65 55 45 35 25 15 5 1.2
Eoff Eon
VCE = 400 V VGE = 15 V IC = 15 A TJ = 150°C
85 0.9
0.6
0.3
0
Figure 14. Switching Time vs. Rg Rg, GATE RESISTOR (W)
SWITCHING TIME (ns)
75 65 55 45 35 25 15 5 1 10 100 1000
85 tf
tr td(off)
td(on)
VCE = 400 V VGE = 15 V IC = 15 A TJ = 150°C
575 175 225 275 325 375 425 475 525
1 10 100 1000
575 tf
tr td_off td_on
Figure 15. Switching Loss vs. VCE VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE VCE, COLLECTOR−EMITTER VOLTAGE (V) 525
475 425 375 325 275 225 175 1.2
SWITCHING LOSS (mJ) SWITCHING TIME (ns)
VGE = 15 V IC = 15 A Rg = 22 W TJ = 150°C
Eoff Eon
0.9
0.6
0.3
0
VGE = 15 V IC = 15 A Rg = 22 W TJ = 150°C
Figure 17. Safe Operating Area
1000 100
10 1
0.01 0.1 1 10 100 1000
Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature
VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)
50 ms 100 ms 1 ms
dc operation
Figure 18. Reverse Bias Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)
VGE = 15 V, TC = 125°C
1000 100
10 1
0.01 0.1 1 10 100 1000
TYPICAL CHARACTERISTICS
0.001 0.01 0.1 1 10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 19. IGBT Transient Thermal Impedance PULSE TIME (sec)
THERMAL RESPONSE (ZqJC)
50% Duty Cycle 20%
10%
5%
2%
1%
Single Pulse
RqJC = 1.06
Junction Case
C1 C2
R1 R2 Rn
Ci = ti/Ri
Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC
Cn
ti (sec) 7.1E−5 1.0E−4 0.002
0.003 0.00999 Ri (°C/W)
0.1 0.05010 0.15051 0.33992 0.10550
0.03 0.20020
0.1 0.11423
0.001 0.01 0.1 1 10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 20. Diode Transient Thermal Impedance PULSE TIME (sec)
THERMAL RESPONSE (ZqJC) 50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse Junction Case
C1 C2
R1 R2 Rn
Ci = ti/Ri
Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC
Cn
ti (sec) 1.0E−7 1.0E−6 1.0E−5 7.1E−5 1.0E−4 Ri (°C/W) 0.01895 0.04097 0.12956 0.1 0.20199
0.002 1.62730
0.003 0.57301
0.00498 0.45453
0.03 0.40199
0.1 0.21558
RqJC = 3.76
Figure 21. Test Circuit for Switching Characteristics
Figure 22. Definition of Turn On Waveform
Figure 23. Definition of Turn Off Waveform
TO−220 CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
STYLE 2:
PIN 1. BASE 2. EMITTER 3. COLLECTOR 4. EMITTER
STYLE 3:
PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE
STYLE 4:
PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 STYLE 7:
PIN 1. CATHODE 2. ANODE 3. CATHODE 4. ANODE STYLE 10:
PIN 1. GATE 2. SOURCE 3. DRAIN 4. SOURCE STYLE 5:
PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
STYLE 8:
PIN 1. CATHODE 2. ANODE
3. EXTERNAL TRIP/DELAY 4. ANODE
STYLE 6:
PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 9:
PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
STYLE 11:
PIN 1. DRAIN 2. SOURCE 3. GATE 4. SOURCE
STYLE 12:
PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. NOT CONNECTED
PACKAGE DIMENSIONS
98ASB42148B DOCUMENT NUMBER:
DESCRIPTION:
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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