ON Semiconductor Is Now

(1)

To learn more about onsemi™, please visit our website at www.onsemi.com

ON Semiconductor Is Now

onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

(2)

175 / J176 / MMBF J175 / MMBFJ1 76 / MMBFJ177 — P-Channe l Switch

J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch

Ordering Information

Figure 1. J175 / J176 Device Package Figure 2. MMBFJ175 / 176 / 177 Device Package

Part Number Marking Package Packing Method

J175 - D26Z J175 TO-92 3L Tape and Reel

J176-D74Z J176 TO-92 3L Ammo

MMBFJ175 6W SOT-23 3L Tape and Reel

MMBFJ176 6X SOT-23 3L Tape and Reel

MMBFJ177 6Y SOT-23 3L Tape and Reel

1. Drain

1 2 3 1

2 3 Straight Lead Bent Lead

TO-92

Bulk Packing Tape & Reel Ammo Packing

2. Gate

3. Source SOT-23

Mark: 6W / 6X / 6Y G

D S

Note: Source & drain are interchangeable.

Description

This device is designed for low-level analog switching

sample-and-hold circuits and chopper-stabilized

amplifiers. Sourced from process 88.

(3)

J175 / MMBFJ1 76 / MMBFJ177 — P-Channe l Switch

www.onsemi.com 2

Absolute Maximum Ratings

^(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T

_A

= 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150 ° C.

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations.

Thermal Characteristics

Values are at T

_A

= 25°C unless otherwise noted.

Note:

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Symbol Parameter Value Unit

V

_DG

Drain-Gate Voltage -30 V

V

_GS

Gate-Source Voltage 30 V

I

_GF

Forward Gate Current 50 mA

T

_J

, T

_STG

Operating and Storage Junction Temperature Range -55 to + 150 ° C

Symbol Parameter

Max.

J175 / J176

⁽³⁾

Unit

MMBFJ175 / MMBFJ176 / MMBFJ177

⁽³⁾

P

_D

Total Device Dissipation 350 225 mW

Derate Above 25 ° C 2.8 1.8 mW/ ° C

R

_θ_JC

Thermal Resistance, Junction to Case 125 ° C/W

R

_θJA

Thermal Resistance, Junction to Ambient 357 556 ° C/W

(4)

175 / J176 / MMBF J175 / MMBFJ1 76 / MMBFJ177 — P-Channe l Switch Electrical Characteristics

Values are at T

_A

= 25°C unless otherwise noted.

Note:

4. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%.

Symbol Parameter Conditions Min. Max. Unit

Off Characteristics

V

_(BR)GSS

Gate-Source Breakdown Voltage I

_G

= 1.0 μ A, V

_DS

= 0 30 V

I

_GSS

Gate Reverse Current V

_GS

= 20 V, V

_DS

= 0 1.0 nA

V

_GS(off)

Gate-Source Cut-Off Voltage V

_DS

= -15 V, I

_D

= -10 nA J175 /

MMBFJ175 3.0 6.0

V J176 /

MMBFJ176 1.0 4.0

MMBFJ177 0.8 2.5

On Characteristics

I

_DSS

Zero-Gate Voltage Drain Current

⁽⁴⁾

V

_DS

= -15 V, I

_GS

= 0

J175 /

MMBFJ175 -7.0 -60.0

mA J176 /

MMBFJ176 -2.0 -25.0 MMBFJ177 -1.5 -20.0

r

_DS(on)

Drain-Source On Resistance V

_DS

≤ 0.1 V, V

_GS

= 0

J175 /

MMBFJ175 125

Ω J176 /

MMBFJ176 250

MMBFJ177 300

(5)

J175 / MMBFJ1 76 / MMBFJ177 — P-Channe l Switch Typical Performance Characteristics

Figure 3. Common Drain-Source Figure 4. Parameter Interactions

Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics

Figure 7. Normalized Drain Resistance vs.

Bias Voltage

Figure 8. Output Conductance vs. Drain Current

-5 -4 -3

-2 -1

0 -20

-16

-12

-8

-4

0

V - DRAIN-SOURCE VOLTAGE (V)

I - DRAIN CURRENT (mA)

DS

D

1.0 V

2.5 V 2.0 V 0.5 V

1.5 V V = 0 VGS

T = 25°C TYP V = 4.5 V_GS(off)

A

3.0 V 3.5 V

r - DRAIN "ON" RESISTANCE (ΩΩ)

1 2 5 10

1 5 10 50 100

10 50 100 500 1,000

V - GATE CUTOFF VOLTAGE (V)

g - TRANSCONDUCTANCE (mmhos)

GS (OFF)

fs

I , g @ V = 15V, V = 0 PULSED r @ -100 mV, V = 0 V @ V = - 15V, I = - 1.0 μA^GS(off)

DSS

r

D

I_DSS

DS DS

GS

DS

DS GS fs

DS

DS g_fs

0 1 2 3 4

-32

-24

-16

-8

0

V - GATE-SOURCE VOLTAGE (V)

GS

D

V = - 4.5 V_GS(off)

25°C V = - 15 V_DS

V = 2.5 V_GS(off) 125°C

- 55°C

25°C 125°C - 55°C

0 1 2 3 4

0 4 8 12 16

V - GATE-SOURCE VOLTAGE (V)

GS

D

V = - 4.5 V_GS(off)

25°C V = - 15 V_DS

V = 2.5 V_GS(off) 125°C

- 55°C

25°C - 55°C 125°C

0 0.2 0.4 0.6 0.8 1

1 2 5 10 20 50 100

V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)

r - NORMALIZED RESISTANCE

GS

DS

r = DS

V @ 5.0V, 10 _GS(off) μA

r DS

________

V GS(off)

V _GS 1 -

GS(off)

( Ω) Ω) Ω) Ω) Ω)

0.01 0.1 1 10

1 10 100 1000

g - OUTPUT CONDUCTANCE ( mhos)

D

os

V = - 4.5V_GS(off) f = 1.0 kHz

μ

V = - 2.5VGS(off)

-20V -10V

-10V -20V

-5.0V -5.0V

_

_ _ _

www.onsemi.com 4

(6)

175 / J176 / MMBF J175 / MMBFJ1 76 / MMBFJ177 — P-Channe l Switch Typical Performance Characteristics (Continued)

Figure 9. Transconductance vs. Drain Current Figure 10. Capacitance vs. Voltage

Figure 11. Noise Voltage vs. Frequency Figure 12. Channel Resistance vs. Temperature

Figure 13. Power Dissipation vs.

Ambient Temperature

0.1 1 10 100

0.1 0.5 1 5 10

g - TRANSCONDUCTANCE (mmhos)

D

fs

V = 2.5V_GS(off)

V = -15V f = 1.0 kHz

DG

V = 6.0V_GS(off) - 55°C

25°C 125°C 25°C

_ _ _ _

0 4 8 12 16 20

1 5 10 100

V - GATE-SOURCE VOLTAGE (V) C (C ) - CAPACITANCE (pF)rs

GS

is

C (V = -15V)is DS

C (V = -15V)rs DS f = 0.1 - 1.0 MHz

0.01 0.1 1 10 100

1 5 10 50 100

f - FREQUENCY (kHz) e - NOISE VOLTAGE (nV / Hz)n

V = - 15V

BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f ≥ 1.0 kHz DG

I = 5.0 mA_D

I = - 0.2 mA_D

√

-50 0 50 100 150

10 50 100 500 1000

T - AMBIENT TEMPERATURE ( C) r - DRAIN "ON" RESISTANCEDS

A ^o

(Ω)

V = 2.5V_GS(off) V = 4.5V_GS(off) V = 8.0V_GS(off)

V = -100 mV V = 0

DS GS

0 25 50 75 100 125 150

0 50 100 150 200 250 300 350

TEMPERATURE ( C) P - POWER DISSIPATION (mW)D

o

TO-92

SOT-23

(7)

J175 / MMBFJ1 76 / MMBFJ177 — P-Channe l Switch Physical Dimensions

Figure 14. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form

www.onsemi.com 6

(8)

175 / J176 / MMBF J175 / MMBFJ1 76 / MMBFJ177 — P-Channe l Switch Physical Dimensions (Continued)

Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE LAND PATTERN RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10 3

1 2

SEE DETAIL A

SEATING PLANE

SCALE: 2X

GAGE PLANE

(0.55) (0.93)

1.20 MAX

C

0.10 0.00

0.10 C

2.40±0.30 2.92±0.20

1.30 +0.20 -0.15

0.60 0.37

0.20 A B 1.90

0.95 (0.29)

0.95

1.40

2.20 1.00 1.90

0.25 0.23

0.08 0.20 MIN

(9)

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910 Japan Customer Focus Center

Phone: 81−3−5817−1050

www.onsemi.com LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected]

ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative