© Semiconductor Components Industries, LLC, 2018
October, 2018 − Rev. 0 1 Publication Order Number:
NXH25T120L2Q1PG/D
Q1 3-Phase TNPC Module
The NXH25T120L2Q1PG/PTG is a case power module containing a three channel T−type neutral−point clamped (TNPC) circuit. Each channel has a two 1200 V, 25 A IGBTs with inverse diodes and two 650 V, 20 A IGBTs with inverse diodes. The module contains an NTC thermistor.
Features
• Low Package Height
• Compact 82.5 mm x 37.4 mm x 12 mm Package
• Press−fit Pins
• Options with Pre−applied Thermal Interface Material (TIM) and Without Pre−applied TIM
• Thermistor
Typical Applications
• Solar Inverters
• UPS
Figure 1. NXH25T120L2Q1PG/PTG Schematic Diagram
T1 44 E1 30 G2 29 E2 +
GND GND
GND DC + DC
− DC
− DC
37 E5 36 E9
5 E3
24 E6
9 E7
21 E10
17 E11
27 E4 25 E8 19 E12
D1
T5 D5
T9 D9
T2 D2 D3
T3
D4 T4
D8 T8
D12 T12 T6
D6 D7
T7
T10 D10 D11
T11 3 G3
28 G4
23 G6
11 G7
22 G10
15 G11 38 G5
26 G8
35 G9
20 G12 43 G1
OUT141, 42
OUT239, 40
OUT333, 34
T1
T2 31
32 2, 4
8, 10 1 12, 13
14, 16
18 6, 7
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DEVICE MARKING Q1 3−TNPC
PRESS FIT CASE 180AS
See detailed ordering and shipping information on page 5 of this data sheet.
ORDERING INFORMATION PIN ASSIGNMENTS
NXH25T120L2Q1P or NXH25T120L2Q1PT
= Specific Device Code G = Pb−Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code
NXH25T120L2Q1PG ATYYWW
NXH25T120L2Q1PTG ATYYWW
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Table 1. MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
HALF BRIDGE IGBT
Collector−Emitter Voltage VCES 1200 V
Gate−Emitter Voltage VGE ±20 V
Continuous Collector Current @ Tc = 80°C (TJ = 175°C) IC 25 A
Pulsed Collector Current (TJ = 175°C) ICpulse 75 A
Maximum Power Dissipation (TJ = 175°C) Ptot 81 W
Short Circuit Withstand Time @ VGE = 15 V, VCE = 600 V, TJ v 150°C Tsc 5 ms
Minimum Operating Junction Temperature TJMIN −40 °C
Maximum Operating Junction Temperature TJMAX 150 °C
NEUTRAL POINT IGBT
Collector−Emitter Voltage VCES 650 V
Gate−Emitter Voltage VGE ±20 V
Continuous Collector Current @ Tc = 80°C (TJ = 175°C) IC 20 A
Pulsed Collector Current (TJ = 175°C) ICpulse 60 A
Maximum Power Dissipation (TJ = 175°C) Ptot 50 W
Short Circuit Withstand Time @ VGE = 15 V, VCE = 400 V, TJ v 150°C Tsc 5 ms
Minimum Operating Junction Temperature TJMIN −40 °C
Maximum Operating Junction Temperature TJMAX 150 °C
HALF BRIDGE DIODE
Peak Repetitive Reverse Voltage VRRM 1200 V
Continuous Forward Current @ Tc = 80°C (TJ = 175°C) IF 15 A
Repetitive Peak Forward Current (TJ = 175°C) IFRM 45 A
Maximum Power Dissipation (TJ = 175°C) Ptot 43 W
Minimum Operating Junction Temperature TJMIN −40 °C
Maximum Operating Junction Temperature TJMAX 150 °C
NEUTRAL POINT DIODE
Peak Repetitive Reverse Voltage VRRM 650 V
Continuous Forward Current @ Tc = 80°C (TJ = 175°C) IF 15 A
Repetitive Peak Forward Current (TJ = 175°C) IFRM 45 A
Maximum Power Dissipation (TJ = 175°C) Ptot 39 W
Minimum Operating Junction Temperature TJMIN −40 °C
Maximum Operating Junction Temperature TJMAX 150 °C
THERMAL PROPERTIES
Storage Temperature range Tstg −40 to 125 °C
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60Hz Vis 3000 VRMS
Creepage distance 12.7 mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating Symbol Min Max Unit
Module Operating Junction Temperature TJ −40 150 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
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Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Parameter Test Conditions Symbol Min Typ Max Unit
HALF BRIDGE IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current VGE = 0 V, VCE = 1200 V ICES – – 300 mA
Collector−Emitter Saturation Voltage VGE = 15 V, IC = 25 A, TJ = 25°C VCE(sat) – 1.90 2.50 V VGE = 15 V, IC = 25 A, TJ = 125°C – 1.96 –
Gate−Emitter Threshold Voltage VGE = VCE, IC = 1.5 mA VGE(TH) 4.90 5.49 6.50 V
Gate Leakage Current VGE = 20 V, VCE = 0 V IGES – – 300 nA
Turn−on Delay Time TJ = 25°C
VCE = 350 V, IC = 15 A VGE = ±15 V, RG = 15 W
td(on) – 59 – ns
Rise Time tr – 26 –
Turn−off Delay Time td(off) – 242 –
Fall Time tf – 52 –
Turn−on Switching Loss per Pulse Eon – 220 – mJ
Turn off Switching Loss per Pulse Eoff – 240 –
Turn−on Delay Time TJ = 125°C
VCE = 350 V, IC = 15 A VGE = ±15 V, RG = 15 W
td(on) – 48 – ns
Rise Time tr – 29 –
Turn−off Delay Time td(off) – 293 –
Fall Time tf – 258 –
Turn−on Switching Loss per Pulse Eon – 400 – mJ
Turn off Switching Loss per Pulse Eoff – 710 –
Input Capacitance VCE = 20 V, VGE = 0 V. f = 10 kHz Cies – 8502 – pF
Output Capacitance Coes – 187 –
Reverse Transfer Capacitance Cres – 154 –
Total Gate Charge VCE = 600 V, IC = 25 A, VGE = ±15 V Qg – 352 – nC
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness ≤ 2.25 Mil,
l = 2.9 W/mK RthJH – 1.17 – °C/W NEUTRAL POINT DIODE CHARACTERISTICS
Diode Forward Voltage IF = 15 A, TJ = 25°C VF – 2.43 − V
IF = 15 A, TJ = 125°C – 1.60 −
Combined IGBT + Diode Voltage Drop IF = 15 A, TJ = 25°C VDT – 3.76 4.60 V
Reverse Recovery Time TJ = 25°C
VCE = 350 V, IC = 15 A VGE = ±15 V, RG = 15 W
trr – 59 – ns
Reverse Recovery Charge Qrr – 0.21 – mC
Peak Reverse Recovery Current IRRM – 7 – A
Peak Rate of Fall of Recovery Current di/dt – 106 – A/ms
Reverse Recovery Energy Err – 40 – mJ
Reverse Recovery Time TJ = 125°C
VCE = 350 V, IC = 15 A VGE = ±15 V, RG = 15 W
trr – 67 – ns
Reverse Recovery Charge Qrr – 0.69 – mC
Peak Reverse Recovery Current IRRM – 19 – A
Peak Rate of Fall of Recovery Current di/dt – 451 – A/ms
Reverse Recovery Energy Err – 100 – mJ
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness ≤ 2.25 Mil,
l = 2.9 W/mK RthJH – 2.45 – °C/W
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Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Parameter Test Conditions Symbol Min Typ Max Unit
NEUTRAL POINT IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current VGE = 0 V, VCE = 650 V ICES – – 200 mA
Collector−Emitter Saturation Voltage VGE = 15 V, IC = 20 A, TJ = 25°C VCE(sat) – 1.49 − V VGE = 15 V, IC = 20 A, TJ = 125°C – 1.61 −
Gate−Emitter Threshold Voltage VGE = VCE, IC = 1.65 mA VGE(TH) 4.70 5.68 6.50 V
Gate Leakage Current VGE = 20 V, VCE = 0 V IGES – – 200 nA
Turn−on Delay Time TJ = 25°C
VCE = 350 V, IC = 15 A VGE = ±15V, RG = 15 W
td(on) – 33 – ns
Rise Time tr – 18 –
Turn−off Delay Time td(off) – 126 –
Fall Time tf – 43 –
Turn−on Switching Loss per Pulse Eon – 250 – mJ
Turn off Switching Loss per Pulse Eoff – 180 –
Turn−on Delay Time TJ = 125°C
VCE = 350 V, IC = 15 A VGE = ±15 V, RG = 15 W
td(on) – 31 – ns
Rise Time tr – 19 –
Turn−off Delay Time td(off) – 138 –
Fall Time tf – 72 –
Turn−on Switching Loss per Pulse Eon – 390 – uJ
Turn off Switching Loss per Pulse Eoff – 300 –
Input Capacitance VCE = 20 V, VGE = 0 V, f = 10 kHz Cies – 3837 – pF
Output Capacitance Coes – 127 –
Reverse Transfer Capacitance Cres – 104 –
Total Gate Charge VCE = 480 V, IC = 20 A, VGE = ±15 V Qg – 166 – nC
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness ≤ 2.25 Mil,
l = 2.9 W/mK RthJH – 1.90 – °C/W
HALF BRIDGE DIODE CHARACTERISTICS
Diode Forward Voltage IF = 15 A, TJ = 25°C VF – 2.47 3 V
IF = 15 A, TJ = 125°C – 1.97 –
Reverse Recovery Time TJ = 25°C
VCE = 350 V, IC = 15 A VGE = ±15 V, RG = 15 W
trr – 63 – ns
Reverse Recovery Charge Qrr – 0.45 – mC
Peak Reverse Recovery Current IRRM – 17 – A
Peak Rate of Fall of Recovery Current di/dt – 313 – A/ms
Reverse Recovery Energy Err – 70 – mJ
Reverse Recovery Time TJ = 125°C
VCE = 350 V, IC = 15 A VGE = ±15 V, RG = 15 W
trr – 233 – ns
Reverse Recovery Charge Qrr – 1.55 – mC
Peak Reverse Recovery Current IRRM – 22 – A
Peak Rate of Fall of Recovery Current di/dt – 76 – A/ms
Reverse Recovery Energy Err – 360 – mJ
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness ≤ 2.25 Mil,
l = 2.9 W/mK RthJH – 2.21 – °C/W
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Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Parameter Test Conditions Symbol Min Typ Max Unit
THERMISTOR CHARACTERISTICS
Nominal resistance T = 25°C R25 − 22 − kW
Nominal resistance T = 100°C R100 − 1468 − W
Deviation of R25 DR/R −5 5 %
Power dissipation PD − 200 − mW
Power dissipation constant − 2 − mW/K
B−value B(25/50), tolerance ±3% − 3950 − K
B−value B(25/100), tolerance ±3% − 3998 − K
ORDERING INFORMATION
Orderable Part Number Marking Package Shipping
NXH25T120L2Q1PG NXH25T120L2Q1PG Q1 3−Phase TNPC − Case 180AS Press−fit Pins
(Pb*Free)
21 Units / Blister Tray
NXH25T120L2Q1PTG NXH25T120L2Q1PTG Q1 3−Phase TNPC − Case 180AS Press−fit Pins
with pre−applied thermal interface material (TIM) (Pb*Free)
21 Units / Blister Tray
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TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE
Figure 2. Typical Output Characteristics Figure 3. Typical Output Characteristics VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
4 3
2 1
00 5 10 20 30 35 40 50
4 3
2 1
00 5 10 20 30 35 45 50
Figure 4. Typical Transfer Characteristics Figure 5. Diode Forward Characteristics
VGE, GATE−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)
10 8
6 4
2 0 0
5 15 20 30 35 40 50
4 3
2 1
00 5 10 15 20 25 30
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A) IF, FORWARD CURRENT (A)
15 25 45
15 25 40
10 25 45
TJ = 25°C
TJ = 25°C TJ = 150°C
TJ = 25°C TJ = 150°C
TJ = 150°C VGE = 19 to 11 V
VGE = 9 V
VGE = 7 V
VGE = 19 to 11 V
VGE = 9 V
VGE = 7 V
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TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE
Figure 6. Transient Thermal Impedance (Half Bridge IGBT) PULSE ON TIME (s)
10 1
0.1 0.01
0.001 0.0001
0.00001 0.0001
0.01 0.1 1 10
Figure 7. Transient Thermal Impedance (Half Bridge Diode) PULSE ON TIME (s)
10 1
0.1 0.01
0.001 0.0001
0.00001 0.01
0.1 1 10
DUTY CYCLE PEAK RESPONSE (°C/W)
Single Pulse DUT = 50%
20%
10%
5%
1%
2%
DUTY CYCLE PEAK RESPONSE (°C/W)
Single Pulse DUT = 50%
20%
10%
5%
1%2%
0.001
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TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE
Figure 8. FBSOA Figure 9. RBSOA
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) 10K
1K 100
10 0.11
1 10 100 1K
10K 1K
100 10
11 10 100 1K
Figure 10. Gate Voltage vs. Gate Charge Qg, GATE CHARGE (nC)
400 300
250 200 150 100 50 00 2 4 6 8 12 14 16
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
VGE, GATE VOLTAGE (V)
Curves must be derated linearly with increase in temperature
50 ms 100 ms
1 ms
DC Single Nonrepetitive
Pulse TC = 25°C
VGE = 15 V TC = 150°C
VCE = 600 V IC = 25 A VGE = 15 V
350 10
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TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE
Figure 11. Typical Output Characteristics Figure 12. Typical Output Characteristics VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
4 3
2 1
00 5 15 20 30 35 40 50
4 3
2 1
00 5 15 20 30 35 45 50
Figure 13. Typical Output Characteristics (IC vs. VDT)
Figure 14. Typical Output Characteristics (IC vs. VDT)
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) 8
6 4
2 00
5 10 15 20 25 30
8 6
4 2
00 5 10 15 20 25 30
Figure 15. Typical Transfer Characteristics Figure 16. Diode Forward Characteristics
VGE, GATE−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)
12 10
8 6
4 2
00 5 15 20 30 35 40 50
4 3
2 1
00 5 10 15 20 25 30
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A) IF, FORWARD CURRENT (A)
TJ = 25°C TJ = 150°C
TJ = 25°C TJ = 150°C
10 25 45
TJ = 25°C VGE = 19 to 11 V
VGE = 9 V
VGE = 7 V
TJ = 150°C
VGE = 19 to 11 V
VGE = 9 V
VGE = 7 V
TJ = 25°C
VGE = 19 to 11 V
VGE = 9 V
VGE = 7 V
VGE = 19 to 11 V
VGE = 9 V
VGE = 7 V 10
25 45
10 25 40
TJ = 150°C
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TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE
Figure 17. Transient Thermal Impedance (Neutral Point IGBT) PULSE ON TIME (s)
10 1
0.1 0.01
0.001 0.0001
0.00001 0.001
0.01 0.1 1 10
Figure 18. Transient Thermal Impedance (Neutral Point Diode) PULSE ON TIME (s)
10 1
0.1 0.01
0.001 0.0001
0.00001 0.01
0.1 1 10
DUTY CYCLE PEAK RESPONSE (°C/W)
Single Pulse DUT = 50%
20%
10%
5%
1%
2%
DUTY CYCLE PEAK RESPONSE (°C/W)
Single Pulse DUT = 50%
20%
10%
5%
1%2%
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TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE
Figure 19. FBSOA Figure 20. RBSOA
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) 1K
100 10
0.11 1 10 100 1K
10K 1K
100 10
11 10 100 1K
Figure 21. Gate Voltage vs. Gate Charge Qg, GATE CHARGE (nC)
180 140
100 80 60 40 20 00 2 4 6 8 12 14 16
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
VGE, GATE VOLTAGE (V)
Curves must be derated linearly with increase in temperature
50 ms 100 ms
1 ms DC Single Nonrepetitive
Pulse TC = 25°C
VGE = 15 V TC = 150°C
VCE = 480 V IC = 20 A VGE = 15 V
160 10
120
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TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMUTATES NEUTRAL POINT DIODE
Figure 22. Typical Switching Loss Eon vs. IC Figure 23. Typical Switching Loss Eon vs. RG
IC (A) RG (W)
35 30 25 20 15 10 5 00
0.2 0.4 0.6 0.8 1.0
35 30 25 20 15 10 5 0.10
0.2 0.3 0.4 0.5 0.6
Figure 24. Typical Switching Loss Eoff vs. IC Figure 25. Typical Switching Loss Eoff vs. RG
IC (A) RG (W)
35 30 25 20 15 10 5 00
0.2 0.4 0.6 0.8 1.0 1.2
35 30 25 20 15 10 5 0.20
0.3 0.4 0.5 0.6 0.7 0.8
Figure 26. Typical Switching Time TDon vs. IC Figure 27. Typical Switching Time TDon vs. RG
IC (A) RG (W)
30
25 35
20 15 10 5 400
45 50 55 60 65 70
35
25 30
20 15 10 5 00
20 40 60 80 120 120
Eon (mJ) Eon (mJ)
Eoff (mJ) Eoff (mJ)
TDon (ns) TDon (ns)
VCE = 350 V VGE = ±15 V RG = 15 W
125°C
25°C
VCE = 350 V VGE = ±15 V IC = 15 A
125°C
25°C
VCE = 350 V VGE = ±15 V RG = 15 W
125°C
25°C
125°C
25°C
VCE = 350 V VGE = ±15 V RG = 15 W
125°C 25°C
125°C 25°C VCE = 350 V
VGE = ±15 V IC = 15 A
VCE = 350 V VGE = ±15 V IC = 15 A
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TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMUTATES NEUTRAL POINT DIODE
Figure 28. Typical Switching Time TDoff vs. IC Figure 29. Typical Switching Time TDoff vs. RG
IC (A) RG (W)
35 30 25 20 15 10 5 2200
240 260 280 320 340 360 380
35 30 25 20 15 10 5 1000
150 200 300 350 400 450 500
Figure 30. Typical Switching Time Tr vs. IC Figure 31. Typical Switching Time Tr vs. RG
IC (A) RG (W)
35 30 25 20 15 10 5 100
15 20 25 30 35 40
35 30 25 20 15 10 5 00
10 20 30 40 60
Figure 32. Typical Switching Time Tf vs. IC Figure 33. Typical Switching Time Tf vs. RG
IC (A) RG (W)
35 30 25 20 15 10 5 00
50 100 150 200 250 300
35 30 25 20 15 10 5 500
100 150 200 250 300
TDoff (ns) TDoff (ns)
Tr (ns) Tr (ns)
Tf (ns) Tf (ns)
VCE = 350 V VGE = ±15 V RG = 15 W 125°C
25°C
VCE = 350 V VGE = ±15 V IC = 15 A
125°C
25°C
VCE = 350 V VGE = ±15 V RG = 15 W
125°C
25°C
125°C 25°C
VCE = 350 V VGE = ±15 V RG = 15 W
125°C
25°C
125°C
25°C VCE = 350 V
VGE = ±15 V IC = 15 A
VCE = 350 V VGE = ±15 V IC = 15 A 300
250
45 50
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TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMUTATES NEUTRAL POINT DIODE
Figure 34. Typical Reverse Recovery Energy vs. IC
Figure 35. Typical Reverse Recovery Energy vs. RG
IC (A) RG (W)
35 30 25 20 15 10 5 0 0.04 0.06 0.08 0.10 0.12
35 30 25 20 15 10 5 0.020
0.04 0.06 0.08 0.10 0.12 0.14
Figure 36. Typical Reverse Recovery Time vs.
IC
Figure 37. Typical Reverse Recovery Time vs.
RG
IC (A) RG (W)
35 30 25 20 15 10 5 550
60 65 70 75 80 85
35 30 25 20 15 10 5 200
40 60 80 100 120
Figure 38. Typical Reverse Recovery Charge vs. IC
Figure 39. Typical Reverse Recovery Charge vs. RG
IC (A) RG (W)
35 25
20 30
15 10 5 0.10
0.2 0.3 0.4 0.5 0.7 0.8 0.9
35 30 25 20 15 10 5 0.20
0.3 0.4 0.5 0.6 0.7 0.8
Err (mJ) Err (mJ)
Trr (ns) Trr (ns)
Qrr (mC) Qrr (mC)
VCE = 350 V VGE = ±15 V RG = 15 W 125°C
25°C
VCE = 350 V VGE = ±15 V IC = 15 A
125°C
25°C
VCE = 350 V VGE = ±15 V RG = 15 W 125°C
25°C 125°C
25°C
VCE = 350 V VGE = ±15 V RG = 15 W
125°C
25°C
125°C
25°C VCE = 350 V
VGE = ±15 V IC = 15 A
VCE = 350 V VGE = ±15 V IC = 15 A 0.6
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TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMUTATES NEUTRAL POINT DIODE
Figure 40. Typical Reverse Recovery Current vs. IC
Figure 41. Typical Reverse Recovery Current vs. RG
IC (A) RG (W)
35 30 25 20 15 10 5 00
5 10 15 20 25
35 30 25 20 15 10 5 00
5 10 15 20 25 30
Figure 42. Typical di/dt vs. IC Figure 43. Typical di/dt vs. RG
IC (A) RG (W)
35 30 25 20 15 10 5 500
100 200 250 300 350 450 500
35 35 25 20 15 10 5 00
200 400 600 1000 1200 1400 1600
Irrm (A) Irrm (A)
di/dt (A/ms) di/dt (A/ms)
VCE = 350 V VGE = ±15 V RG = 15 W 125°C
25°C
125°C
25°C
VCE = 350 V VGE = ±15 V RG = 15 W
125°C
25°C
125°C
25°C
VCE = 350 V VGE = ±15 V IC = 15 A
VCE = 350 V VGE = ±15 V IC = 15 A 400
150
800
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TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMUTATES HALF BRIDGE DIODE
Figure 44. Typical Switching Energy Eon vs. IC Figure 45. Typical Switching Energy Eon vs.
RG
IC (A) RG (W)
0.1 0.2 0.3 0.5 0.6 0.7 0.9 1.0
0.15 0.20 0.25 0.30 0.35 0.40 0.50 0.55
Figure 46. Typical Switching Energy Eoff vs. IC Figure 47. Typical Switching Energy Eoff vs.
RG
IC (A) RG (W)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.18 0.20 0.22 0.24 0.26 0.28 0.30 0.32
Figure 48. Typical Switching Time TDon vs. IC Figure 49. Typical Switching Time TDon vs. RG
IC (A) RG (W)
22 24 26 28 32 34 36 38
10 20 30 40 50 60 70
Eon (mJ) Eon (mJ)
Eoff (mJ) Eoff (mJ)
TDon (ns) TDon (ns)
VCE = 350 V VGE = ±15 V RG = 15 W
125°C
25°C
VCE = 350 V VGE = ±15 V IC = 15 A
125°C
25°C
VCE = 350 V VGE = ±15 V RG = 15 W
125°C
25°C 125°C
25°C
VCE = 350 V VGE = ±15 V RG = 15 W 125°C
25°C
125°C
25°C VCE = 350 V VGE = ±15 V IC = 15 A
VCE = 350 V VGE = ±15 V IC = 15 A 35
30 25 20 15 10 5
0 0 5 10 15 20 25 30 35
35 30 25 20 15 10 5
0 0 5 10 15 20 25 30 35
35 25
20 30
15 10 5
0 0 5 10 15 20 25 30 35
0.4
0.8 0.45
30
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TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMUTATES HALF BRIDGE DIODE
Figure 50. Typical Switching Time TDoff vs. IC Figure 51. Typical Switching Time TDoff vs. RG
IC (A) RG (W)
100 120 160 180 200 240 260 280
60 80 100 140 160 200 220 240
Figure 52. Typical Switching Time Tr vs. IC Figure 53. Typical Switching Time Tr vs. RG
IC (A) RG (W)
10 15 20 25 30 35
5 10 15 20 25 30 35
Figure 54. Typical Switching Time Tf vs. IC Figure 55. Typical Switching Time Tf vs. RG
IC (A) RG (W)
10 30 40 50 70 80 90 100
40 45 50 55 65 70 75 80
TDoff (ns) TDoff (ns)
Tr (ns) Tr (ns)
Tf (ns) Tf (ns)
VCE = 350 V VGE = ±15 V RG = 15 W 125°C
25°C
VCE = 350 V VGE = ±15 V IC = 15 A
125°C
25°C
VCE = 350 V VGE = ±15 V RG = 15 W
125°C
25°C
125°C
25°C
VCE = 350 V VGE = ±15 V RG = 15 W 125°C
25°C
125°C
25°C VCE = 350 V
VGE = ±15 V IC = 15 A
VCE = 350 V VGE = ±15 V IC = 15 A 35
30 25 20 15 10 5
0 0 5 10 15 20 25 30 35
35 30 25 20 15 10 5
0 0 5 10 15 20 25 30 35
35 25
20 30
15 10 5
0 0 5 10 15 20 25 30 35
220
140
120 180
60
20
60
www.onsemi.com 18
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMUTATES HALF BRIDGE DIODE
Figure 56. Typical Reverse Recovery Energy vs. IC
Figure 57. Typical Reverse Recovery Energy vs. RG
IC (A) RG (W)
0 0.1 0.2 0.4 0.5 0.6 0.7 0.8
0 0.05 0.15 0.20 0.25 0.35 0.40 0.45
Figure 58. Typical Reverse Recovery Time vs.
IC
Figure 59. Typical Reverse Recovery Time vs.
RG
IC (A) RG (W)
0 100 200 300 400 500 600
0 50 150 200 250 300 350 400
Figure 60. Typical Reverse Recovery Charge vs. IC
Figure 61. Typical Reverse Recovery Charge vs. RG
IC (A) RG (W)
0 0.5 1.0 1.5 2.0 2.5 3.0
0.2 0.4 0.6 0.8 1.0 1.4 1.6 1.8
Err (mJ) Err (mJ)
Trr (ns) Trr (ns)
Qrr (mC) Qrr (mC)
VCE = 350 V VGE = ±15 V RG = 15 W
125°C
25°C
VCE = 350 V VGE = ±15 V IC = 15 A
125°C
25°C
VCE = 350 V VGE = ±15 V
RG = 15 W 125°C
25°C
125°C
25°C
VCE = 350 V VGE = ±15 V RG = 15 W
125°C
25°C
125°C
25°C VCE = 350 V
VGE = ±15 V IC = 15 A
VCE = 350 V VGE = ±15 V IC = 15 A 35
30 25 20 15 10 5
0 0 5 10 15 20 25 30 35
35 30 25 20 15 10 5
0 0 5 10 15 20 25 30 35
35 25
20 30
15 10 5
0 0 5 10 15 20 25 30 35
0.3
0.30
0.10
100
1.2
www.onsemi.com 19
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMUTATES HALF BRIDGE DIODE
Figure 62. Typical Reverse Recovery Current vs. IC
Figure 63. Typical Reverse Recovery Current vs. RG
IC (A) RG (W)
12 14 16 18 20 22 24 26
10 15 20 25 30 35
Figure 64. Typical di/dt vs. IC Figure 65. Typical di/dt vs. RG
IC (A) RG (W)
0 100 200 300 400 500 600 700
0 500 1000 1500 2000 2500
Irrm (A) Irrm (A)
di/dt (A/ms) di/dt (A/ms)
35 30 25 20 15 10 5
0 0 5 10 15 20 25 30 35
35 30 25 20 15 10 5
0 0 5 10 15 20 25 35 35
VCE = 350 V VGE = ±15 V RG = 15 W 125°C
25°C
125°C
25°C
VCE = 350 V VGE = ±15 V RG = 15 W
125°C 25°C
125°C 25°C
VCE = 350 V VGE = ±15 V IC = 15 A
VCE = 350 V VGE = ±15 V IC = 15 A
PIM44, 71x37.4 CASE 180AS
ISSUE O
DATE 25 JUN 2018
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
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PAGE 1 OF 2 PIM44, 71x37.4
© Semiconductor Components Industries, LLC, 2018 www.onsemi.com
www.onsemi.com 2
DATE 15 JUN 2018
GENERIC MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG ATYYWW
XXXXX = Specific Device Code G = Pb−Free Package
AT = Assembly & Test Site Code YYWW = Year and Work Week Code
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
98AON92314G DOCUMENT NUMBER:
DESCRIPTION:
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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© Semiconductor Components Industries, LLC, 2018 www.onsemi.com
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