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©Research Institute for Integrated Science, Kanagawa University

عේ ⪺ع 2005

ᐕᐲ␹ᄹᎹᄢቇ✚วℂቇ⎇ⓥᚲ౒ห⎇ⓥഥᚑ⺰ᢥ

㜞ຠ⾰࠳ࠗࡗࡕࡦ࠼⭯⤑ߩᒻᚑߣ⹏ଔߩ⎇ⓥ

ਛ↰ⓛᴦ

1,

ᢪ⮮଻⋥

Ꮉፒసೣ

2

᦯ㇱବᐘ

Research for Formation of High-Quality Diamond Epitaxial Thin Layers on the Diamond Substrates and Evaluation of These Layers

Jyoji Nakata

1,4

, Yasunao Saito

1

, Katsunori Kawasaki

2

and Toshiyuki Hattori

3

1 Department of Information Science, Faculty of Science, Kanagawa University, Hiratsuka-shi.

Kanagawa-ken, 259-1293, Japan

2 Graduate School of Science and Engineering Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8550, Japan

3Research Laboratory of Nuclear Reactor, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152-8550, Japan

4To whom correspondence should be addressed. E-mail: jyojin@info.kanagawa-u.ac.jp

Abstract: We have developed a microwave-plasma CVD apparatus for depositing epitaxial diamond layers on the diamond substrates. We used Ib-type substrates and succeeded in depositing high-quality diamond epitaxial layers on these substrates, confirmed by measuring Raman shift spectra and the electrical characteristics of CVD layers using a Hall effect measuring instrument. However, the surface morphology of the deposited layers is not so good, as ascertained by Atomic Force Microprobe. We also measured impurity profiles in the CVD layers, using Secondary Ion Mass Spectroscopy. Moreover, we found an abrupt concentration difference of N impurity at the interface between the deposited layer and the substrate, showing that the concentration of N impurity is lower in the CVD layer than in the substrate.

Keywords: microwave-plasma, CVD, diamond, epitaxial layer, Hall-effect, AFM, SIMS

ᐨ⺰

ߪߓ߼ߦ

ࡢࠗ࠼ࠡࡖ࠶ࡊඨዉ૕ߩઍ⴫ᩰߢ޽ࠆ࠳ࠗࡗࡕࡦ࠼ඨ ዉ૕ߪޔSiඨዉ૕ߢߪേ૞ߒߥ޿ࠃ߁ߥ㜞᷷ⅣႺਅ߿

㜞᡼኿✢ⅣႺਅߦ߅޿ߡ߽േ૞ߔࠆඨዉ૕ߣߒߡᵈ⋡

ߐࠇߡ޿ࠆޕߘࠇ߫߆ࠅߢߪߥߊޔ㜞㔚ሶ⒖േᐲ߿㜞 ᱜሹ⒖േᐲޔ޽ࠆ޿ߪ㘻๺㔚ሶ࠼࡝ࡈ࠻ㅦᐲ߇ᄢ߈޿

╬ߩᕈ⾰߆ࠄ㜞ㅦ㔚ሶ࠺ࡃࠗࠬ߳ߩᔕ↪߇ᦼᓙߐࠇߡ

޿ࠆޕߐࠄߦ⛘✼⠴࿶߇㜞޿ߎߣ߆ࠄ㜞ࡄࡢ࡯࠺ࡃࠗ

ࠬߣߒߡߩᓎഀ߽ᄢ߈޿ޕߎߩࠃ߁ߦ࠳ࠗࡗࡕࡦ࠼ඨ ዉ૕ߪ Si ඨዉ૕ࠃࠅ߽ߪࠆ߆ߦఝࠇߚ․ᓽࠍ߽ߟ㜞

᷷േ૞น⢻ߥඨዉ૕⚛ሶߣߒߡޔ߹ߚ⠴᡼኿✢ᕈ⚛ሶ ߣߒߡߩᔕ↪߇ᦼᓙߐࠇߡ޿ࠆޕ࠳ࠗࡗࡕࡦ࠼ඨዉ૕

ߩવዉᕈ೙ᓮᛛⴚ߇⏕┙ߐࠇࠇ߫ޔࡢࠗ࠼ࠡࡖ࠶ࡊඨ ዉ૕ߩታ↪ൻࠍᄢ߈ߊଦㅴߔࠆߎߣ߇ߢ߈ࠆޕࡢࠗ࠼

ࠡࡖ࠶ࡊඨዉ૕᧚ᢱࠍ↪޿ߚ⠴ⅣႺᕈ⚛ሶ߇᥉෸ߔࠇ

߫ޔ㔚ജ೙ᓮࠪࠬ࠹ࡓ߿ౝΆᯏ㑐ߩ㜞ല₸ൻߦࠃࠆ⾗

Ḯߩ᦭ല೑↪ޔ᷷ቶലᨐࠟࠬߩૐᷫ╬߇ᦼᓙߐࠇޔ⃻

࿷ᦨ㊀ⷐߩ⺖㗴ߣߥߞߡ޿ࠆⅣႺ໧㗴ߦኻߒߡ⸃᳿߳

ߩᄢ߈ߥ♻ญࠍਈ߃ࠆߎߣߦߥࠆޕ߹ߚޔੱᎿⴡᤊ៞

タ㔚ሶᯏེ߳ߩቝቮ✢ߩᓇ㗀ࠍૐᷫߢ߈ޔࡑ࡞࠴ࠖࡔ

࠺ࠖࠕᤨઍߦะߌߚⴡᤊ᡼ㅍ߿⒖േ૕ㅢାߩ᥉෸ߦነ ਈߔࠆ߽ߩߣ⠨߃ࠄࠇޔ␠ળߦᄢ߈ߥࠗࡦࡄࠢ࠻ࠍਈ ߃ࠆޕߒ߆ߒޔએਅߩࠃ߁ߥ໧㗴ὐ߇޽ࠆޕ

ᱷᔨߥ߇ࠄ⃻࿷߹ߢ⦟ᅢߥ㧺ဳ࠳ࠗࡗࡕࡦ࠼ඨዉ૕

߇ታ⃻ߐࠇߡ޿ߥ޿ޕඨዉ૕⚛ሶታ⃻ߩߚ߼ߦߪޔP

ဳߣ N ဳ㗔ၞࠍᒻᚑߔࠆߚ߼ߦવዉᕈ೙ᓮߩਇ⚐‛

ዉ౉ᛛⴚ߇ᔅⷐߣߥࠆ߇ޔ᜛ᢔଥᢙ߇ዊߐ޿ߚ߼ߦᾲ

᜛ᢔߦࠃࠆਇ⚐‛ዉ౉ߪ࿎㔍ߢ޽ࠆޕᓥߞߡޔࠗࠝࡦ ᵈ౉ߦࠃࠆਇ⚐‛ర⚛ዉ౉߇᦭ᦸⷞߐࠇߡ޿ࠆޕߒ߆ ߒޔ࠳ࠗࡗࡕࡦ࠼ߢߪࠗࠝࡦᵈ౉ߦ઻߁៊்ᒻᚑޔᚗ

޿ߪࠗࠝࡦᵈ౉ᓟߩᾲಣℂߦ઻߁ࠣ࡜ࡈࠔࠗ࠻ᒻᚑߦ ࠃࠅޔ࠳ࠗࡗࡕࡦ࠼ߣߒߡߩ⚿᥏ᕈ⛽ᜬ߇࿎㔍ߥ⁁ᴫ ߦ޽ࠆޕ߹ߚޔ⦟ᅢߥNဳጀߪߢ߈ߡ߅ࠄߕޔ߿ߞߣ ᦨㄭCVDᴺߦࠃࠅၸⓍᤨߦหᤨ࠼࡯ࡇࡦࠣߦࠃࠅN

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ဳጀᒻᚑߩႎ๔߇಴ߡ߈ߚ߫߆ࠅߢ޽ࠆޕߒ߆ߒޔߎ ߩᣇᴺߦࠃࠆNဳጀߩ㔚᳇વዉᕈߪૐߊޔ㔚ሶ⒖േᐲ

߽ૐ޿ޕߐࠄߦ㔚ሶ࠺ࡃࠗࠬൻࠍ⠨߃ࠇ߫ਇ⚐‛ࡊࡠ ࡈࠔࠗ࡞ߩ೙ᓮᕈޔᵈ౉㗔ၞߩㆬᛯᕈߦఝࠇߚࠗࠝࡦ ᵈ౉ߦࠃࠆNဳਇ⚐‛ዉ౉ߪᔅ⥋ߢ޽ࠆޕߒ߆ߒޔࠗ

ࠝࡦᵈ౉ߦࠃࠆNဳጀᒻᚑߪ਎⇇ฦ࿾ߦ߅ߌࠆ40ᐕ એ਄ߦ߽෸߱ߐ߹ߑ߹ߥ⹜ߺߦ᜔߽ࠊࠄߕޔᧂߛᚑഞ ߒߡ޿ߥ޿ޕ

ᧄ⎇ⓥߩ⁛ഃ⊛ߥὐ෸߮ߘߩ⌕ᗐߦ⥋ߞߚ⚻✲

਄⸥ߩᄖㇱ⁁ᴫߣߪ⁛┙ߦ⪺⠪ߪ23ᐕߦ෸߱NTT⎇

ⓥᚲᤨઍߦޔ2.5-MeV Van-de-Graaffဳടㅦེߦࠃࠆ MeV⚖ࠗࠝࡦࡆ࡯ࡓᾖ኿ߣߘࠇࠍ೑↪ߒߚ‛ᕈታ㛎ޔ ᚗ޿ߪዊဳ SOR(Synchrotron Orbital Radiation)శ Ḯ↪⿥વዉ㔚ሶ⫾Ⓧ࡝ࡦࠣߩ⸳⸘ޔ⵾ㅧߦ៤ߐࠊߞߚޕ හߜޔ৻⽾ߒߡޔടㅦེ⑼ቇޔ෶ߪߘࠇࠍ೑↪ߒߚ‛

ᕈ‛ℂቇߩಽ㊁ߢ઀੐ࠍߒߡ߈ߚޕ

ߘߩਛߢ߽․ߦVan-de-Graaffടㅦེࠍ೑↪ߒߚࠗ

ࠝ ࡦࡆ࡯ ࡓ⺃ ⿠⚿ ᥏ ᚑ㐳ᴺ(Ion-Beam-Induced Epitaxial Crystallization, IBIEC)ߪޔ⪺⠪ߩઍ⴫⊛

ߥᬺ❣ߢ޽ࠆޕIBIECߪ⪺⠪߇SiߦMeV⚖ࠗࠝࡦ ࡆ࡯ࡓࠍᾖ኿ߔࠆߎߣߦࠃࠅޔㅢᏱߩᾲಣℂ᷷ᐲ (550-600°C)ࠃࠅ㆝߆ߦૐ᷷(200-300°C)ߢ㕖᥏⾰ Si ጀ߇ਅ࿾ߩන⚿᥏ Si ၮ᧼ߦኻߒߡࠛࡇ࠲ࠠࠪࡖ࡞න

⚿᥏ᚑ㐳ߔࠆߎߣࠍ⷗಴ߒߚߩ߇ ਎⇇ᦨೋߢ޽ࠆ1, 2ޕ ߘߩᓟޔ਎⇇ฦ࿾ߢߎߩ⎇ⓥ߇ᵴ⊒ߦⴕߥࠊࠇߚ318ޕ ኻ⽎߽SiߛߌߢߪߥߊޔGe, SiGe, BP, Al2O3╬ߐ߹

ߑ߹ߥ᧚ᢱߦᐢ߇ࠅޔߎߩ⃻⽎߇᷹ⷰߐࠇߡ޿ࠆޕℂ

⺰⊛ᬌ⸛߽ᵴ⊒ߦⴕߥࠊࠇޔߎߩ⃻⽎ࠍ⺑᣿ߔࠆฦ⒳

ࡕ࠺࡞߇ឭ᩺ߐࠇߚ1921ޕ

ㅢᏱࠗࠝࡦᾖ኿ߪᾖ኿៊்ࠍ⺃⿠ߒޔ⚿᥏ᕈࠍૐਅ ߐߖࠆᣇะߦ૞↪ߔࠆޕߒ߆ߒޔIBIECߦࠃࠅㅢᏱߩ ᾲಣℂࠃࠅ߽㆝߆ߦૐ᷷ߦ߅޿ߡޔ㕖᥏⾰ጀ߇ࠛࡇ࠲

ࠠࠪࡖ࡞ᚑ㐳ߒߡޔ߻ߒࠈㅒߦ⚿᥏ᕈ߇Ⴧടߔࠆᣇะ ߦ૞↪ߔࠆޕߎߩࠃ߁ߥ৻⷗ㅒ⺑⊛ߥ⃻⽎߇ߥߗ⿠߈ ࠆߩ߆ޔߐ߹ߑ߹ߥࡕ࠺࡞߇ឭ᩺ߐࠇ⼏⺰ߐࠇߡ޿ࠆޕ ၮ᧼න⚿᥏⇇㕙ઃㄭߢ㕖᥏⾰ጀౝㇱߦ⺃⿠ߐࠇࠆ૗ࠄ ߆ߩᒻߩᰳ㒱㧔ⓨᩰሶὐ߿ᧂ⚿วᚻ╬㧕߇ૐ᷷⚿᥏ൻ ᚗ޿ߪᰳ㒱࿁ᓳߦነਈߒߡ޿ࠆߎߣޔ߹ߚ ᾖ኿ࠗࠝࡦ ߩ㔚ሶ⊛㕖ᒢᕈᢔੂ߇න⚿᥏ൻࠍჇㅦߔࠆߎߣ߽ಽ ߆ߞߡ߈ߚ 2224ޕߒ߆ߒޔߎߩ⃻⽎ࠍ✚᜝⊛߆ߟቯ

㊂⊛ߦ⺑᣿ߔࠆࡕ࠺࡞ߪᧂߛឭ᩺ߐࠇߡ޿ߥ޿ޕ

ߎߩ IBIEC ߣ޿߁㕖ᾲᐔⴧㆊ⒟ࠍ೑↪ߒߚ⚿᥏ൻ

ߩᣇᴺࠍޔㅢᏱߩᾲᐔⴧㆊ⒟ߢ޽ࠆᾲಣℂߢߪోߊ㔚

᳇⊛ߦᵴᕈൻ߇ਇน⢻ߥޔࠗࠝࡦᵈ౉࠳ࠗࡗࡕࡦ࠼ߩ 㔚᳇⊛ᵴᕈൻߦ೑↪ߢ߈ߥ޿߆ߣ⌕ᗐߒߚޕ࠳ࠗࡗࡕ

ࡦ࠼ߦ IBIEC ࠍㆡ↪ߒߚߣ޿߁ႎ๔ߪޔ⪺⠪╬ߦࠃ

ࠆᬌ⸛એᄖߥ޿ޕ

ߎߩIBIECࠍSiߦᔕ↪ߒߚ଀ߢߪޔߎߩ㕖ᾲᐔⴧ ㆊ⒟ߣ޿߁․ᓽࠍᦨᄢ㒢ߦ↢߆ߒߡޔSiߩ࿕ṁ㒢⇇ࠍ

⿥߃ߡ㜞Ớᐲ㧔1021/cm3㧕ߦAsࠗࠝࡦᵈ౉ߢ࠼࡯ࡊߐ ࠇߚSiߦኻߒߡ߽ޔߘߩᵈ౉ߒߚAsߩ80%એ਄ࠍ⟎

឵૏⟎ߦ౉ࠇߡ㔚᳇⊛ߦᵴᕈൻߐߖࠆߎߣߦᚑഞߒߡ

޿ࠆޕ

೨⸥ߒߚࠃ߁ߦ40 ᐕએ਄ߦ෸߱਎⇇ਛߩദജߦ߽

᜔ࠊࠄߕޔㅢᏱߩᾲಣℂߦࠃࠆࠗࠝࡦᵈ౉࠳ࠗࡗࡕࡦ

࠼ߩ N ဳൻߪታ⃻಴᧪ߡ޿ߥ޿ޕ໑৻ޔPrince߇㉄

⚛ࠗࠝࡦᵈ౉ߦࠃࠅޔNဳࠍᒻᚑߒߚߣߩႎ๔߇޽ࠆ

߇25,26ޔNဳ࠼࡯ࡄࡦ࠻ߢߪߥ޿㉄⚛ࠗࠝࡦᵈ౉ߢN

ဳ߇ߤ߁ߒߡߢ߈ࠆߩ߆㧔࠳ࡉ࡞࠼࠽࡯ߥߩ߆㧕ߣ߆ޔ ᚗ޿ߪ㉄⚛ߘߩ߽ߩߩᕈ⾰ߢߪߥߊޔ㉄⚛ࠗࠝࡦᵈ౉

ߦࠃࠆᰳ㒱߇⺃⿠ߒߚ N ဳጀߢߪߥ޿߆ߣ߆⼏⺰ߩ

૛࿾߇޽ࠅޔ࠼࡯ࡄࡦ࠻ࠗࠝࡦᵈ౉ߦࠃࠆNဳᵴᕈൻ ߣᢿቯߔࠆߦߪ⥋ߞߡ޿ߥ޿ޕ৻ᣇޔ⪺⠪ߪ⁛┙ⴕ᡽

ᴺੱ ↥ᬺᛛⴚ✚ว⎇ⓥᚲߣ౒หߢPࠗࠝࡦᵈ౉ߒߚ 㜞ຠ⾰ࡎࡕࠛࡇ࠲ࠠࠪࡖ࡞࠳ࠗࡗࡕࡦ࠼⭯⤑߇ޔMeV

⚖Neࠗࠝࡦࡆ࡯ࡓᾖ኿(IBIEC)ߦࠃࠅNဳߩዉવጀ ࠍᒻᚑߒߡ޿ࠆ⏕߆ߥళ୥ࠍߟ߆ࠎߢ߅ࠅޔ․⸵㧔․

㗿ᐔ11-345410㧕ࠍ1999ᐕ12᦬ߦឭ಴ߒߚޕߐࠄߦޔ ㅢᏱߩᾲಣℂߢߪࠗࠝࡦᵈ౉ߒߚ P ේሶ߇ᾲಣℂ᷷

ᐲ߇㜞ߊߥࠆߣޔ⟎឵૏⟎߆ࠄߪߕࠇᩰሶ㑆૏⟎ᚗ޿

ߪ࡜ࡦ࠳ࡓߥࠨࠗ࠻߳౉ߞߡ޿ߊߩߦኻߒߡޔIBIEC ߢߪㅒߦ⟎឵₸߇਄᣹ߔࠆߣ޿߁੍஻⊛⚿ᨐ߽ᓧߡ޿

ࠆޕߎߩࠃ߁ߦߎߩಽ㊁ߩ⎇ⓥߪᣣᧄ߇ᦨ㜞᳓Ḱߦ޽

ࠆޕᓥߞߡޔታ↪ൻߢ߈ࠆน⢻ᕈߪ㕖Ᏹߦ㜞޿ޕ਎⇇

⊛ߥIBIECߩ⎇ⓥߩ⋓ࠅ਄߇ࠅ߇৻Ბ⪭ߒߚ⃻࿷߽ޔ

ᣣᧄߢߪၮ␆⎇ⓥࠍਛᔃߦ⎇ⓥ߇⛮⛯ߐࠇߡ޿ࠆޕᣣ ᧄ߇⊒ା࿾ߣ߽޿߃ࠆߎߩ⎇ⓥ⺖㗴ࠍޔᔕ↪߹ߢⷞ㊁ ߦ౉ࠇߡᣣᧄߢ⢒ߡߡ޿ߊᗧ⟵ߪᄢ߈޿ޕ

⃻࿷ޔਇ⚐‛ࠍ࠼࡯ࡇࡦࠣߔࠆએ೨ߦ⦟ᅢߥ࠳ࠗࡗ ࡕࡦ࠼⭯⤑ࠍవߕᒻᚑߔࠆၮᧄ⊛ߥ⎇ⓥ߇ⴕࠊࠇߡ޿

ࠆޕߘߩ㓙ޔ᦭ലߥᚻᴺߣߒߡ㜞᷷㜞࿶วᚑߢᒻᚑߒ ߚ࠳ࠗࡗࡕࡦ࠼ၮ᧼਄ߦCVDᴺߢ㜞ຠ⾰ߥ⭯⤑ࠍၸ

Ⓧߐߖࠆᣇᴺ߇޽ࠆޕߘߩ႐วߢ߽᦭ജߥߩߪࡑࠗࠢ

ࡠᵄࡊ࡜࠭ࡑCVDᴺߢ޽ࠆޕߎࠇ߇᦭ലߥᣇᴺߢ޽

ࠆℂ↱ߪޔࡊ࡜࠭ࡑᒻᚑᤨ᡼㔚㔚ᭂ߇ᔅⷐߥߊޔ⋥ធ ࡑࠗࠢࡠᵄࡄࡢ࡯ߢ᳓⚛Ꮧ㉼ߐࠇߚࡔ࠲ࡦࠟࠬߩࡊ࡜

࠭ࡑࠍᒻᚑߔࠆߚ߼ߢ޽ࠆޕහߜޔ㔚ᭂ᧚ᢱߦ⿠࿃ߒ ߚਇ⚐‛ߩ⤑ਛ߳ߩขࠅㄟߺ߇ߥߊޔ⚐☴ߥCVD⭯

⤑߇ᒻᚑߐࠇࠆޕ

᧚ᢱߣᣇᴺ

ࡑࠗࠢࡠᵄࡊ࡜࠭ࡑCVDⵝ⟎ߩ⵾૞

એ਄ߩℂ↱߆ࠄਛ↰⎇ⓥቶߦ߅޿ߡ߽ࡑࠗࠢࡠᵄࡊ࡜

࠭ࡑCVDⵝ⟎ࠍ⹜૞ߒޔߘࠇࠍ૶↪ߒߡ㜞ຠ⾰ߥ࠳

ࠗࡗࡕࡦ࠼⭯⤑ࠍᒻᚑߔࠆߎߣࠍ⹜ߺߚޕ

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࿑㧝ߦ⹜૞ߒߚࡑࠗࠢࡠᵄࡊ࡜࠭ࡑCVDⵝ⟎ࠍ␜ߔޕ

࿑ਛࡑࠣࡀ࠻ࡠࡦࡏ࠶ࠢࠬ߆ࠄ᡼಴ߐࠇߚ2.45 GH㨦 ߩ๟ᵄᢙߩ㔚⏛ᵄ㧔ࡑࠗࠢࡠᵄ㧕߇ࠬ࠲ࡉ࠴ࡘ࡯࠽࡯

ࠍ㈩ߒߚዉᵄ▤ߩਛࠍㅢㆊߔࠆޕ౞╴ᒻߩ⍹⧷ࠟ࡜ࠬ

ਛߦ⟎߆ࠇߚ࠳ࠗࡗࡕࡦ࠼ၮ᧼⹜ᢱߦࡑࠗࠢࡠᵄ߇ᛩ

౉ߐࠇࠆޕ౞╴ᒻ⍹⧷▤ਛߦߪޔࡑࠬࡈࡠ࡯ࡔ࡯࠲ࠍ

੺ߒߡ᳓⚛ࠟࠬߣࡔ࠲ࡦࠟࠬߩᷙวࠟࠬ߇ଏ⛎ߐࠇࠆޕ

⍹⧷▤ో૕ߪࠬ࠹ࡦ࡟ࠬ⵾ߩ⌀ⓨ࠴ࡖࡦࡃ࡯ߦ⟎߆ࠇ

࠲࡯ࡏಽሶࡐࡦࡊߣࡠ࡯࠲࡝࡯ࡐࡦࡊࠍㅢߒߡ⌀ⓨឃ

᳇ߐࠇࠆޕ౞╴ᒻ⍹⧷▤ߪ⥄૞ߩࠦࠗ࡞ߢ࿐߹ࠇߡ߅ ࠅޔࡊ࡜࠭ࡑᒻᚑⓨ㑆ਛߦ⏛႐ࠍ⊒↢ߢ߈ࠆޕᓥ᧪ޔ ࡑࠗࠢࡠᵄࡊ࡜࠭ࡑCVDⵝ⟎ߢ࠳ࠗࡗࡕࡦ࠼⭯⤑ࠍ ၸⓍߐߖࠆ㓙ߪޔ⏛႐ࠍ૶ࠊߕ⋥ធࡑࠗࠢࡠᵄࡄࡢ࡯

ߛߌߢࡊ࡜࠭ࡑࠍᒻᚑߒߡ޿ߚޕ੹࿁ޔೋ߼ߡߩ⹜ߺ ߣߒߡ⏛႐ࠍᒻᚑߐߖޔߘࠇߦࠃࠆၸⓍㅦᐲะ਄ࠍ

⁓ߞߡⵝ⟎ࠍ⚵ߺ਄ߍߚޕᦝߦޔၮ᧼⹜ᢱࠍ⁛┙ߦࡅ࡯

࠲ߢ1000͠⒟ᐲߦടᾲߢ߈ࠆ᭴ㅧߦߒߚޕㅢᏱߪࡑࠗ

ࠢࡠᵄࡄࡢ࡯ߩߺߢടᾲߒߡ޿ࠆⵝ⟎߇ᱴߤߢ޽ߞߚޕ ߎߩࠃ߁ߦฦ⒳ߩᎿᄦࠍߒߡ㧞ᐕ߇߆ࠅߢߎߩⵝ⟎ࠍ ߊߺ਄ߍߚ߇ޔᄙߊߩㇱຠߪℂᵴ↪ߒߡ⵾૞ߒߚޕ

࠳ࠗࡗࡕࡦ࠼⭯⤑ᒻᚑ᧦ઙ

⴫1ߦᤓᐕߣ੹ᐕߩታ㛎ߦ߅ߌࠆ࠳ࠗࡗࡕࡦ࠼⭯⤑ᒻ ᚑ᧦ઙߩᲧセࠍ␜ߔޕ

ߎߩ⴫߆ࠄ᣿ࠄ߆ߥࠃ߁ߦᤓᐕᐲߣ੹ᐕᐲߣߢࡑࠗ

ࠢࡠᵄࡄࡢ࡯ߣ᳓⚛ᵹ㊂ߩ୯߇ᄢ᏷ߦ⇣ߥߞߡ޿ࠆޕ

᳓⚛ࠟࠬߣࡔ࠲ࡦࠟࠬߣߩᷙวࠟࠬ࿶ജߪ 25 Torr (⚂3.3 kPa)ߣᄌᦝߪߥ޿߇ޔ᳓⚛ᵹ㊂ࠍ㧞୚ߦߒߚߚ

߼ߦࡔ࠲ࡦỚᐲ㧔ࡔ࠲ࡦࠟࠬᵹ㊂ߣ᳓⚛ࠟࠬᵹ㊂ߣߩ Ყ㧕ߪᤓᐕߩ0.1%߆ࠄ੹ᐕᐲߩ0.05%߳ߣඨಽߦߥߞ ߡ޿ࠆޕࡔ࠲ࡦỚᐲࠍᷫዋߐߖࠆߣၸⓍㅦᐲ㧔⭯⤑ᚑ 㐳ㅦᐲ㧕ߪඨಽߦߥࠆޕᓥߞߡޔᤓᐕᐲߣห৻ߩ⤑ෘ

ߦߔࠆߚ߼ߦߪᚑ⤑ᤨ㑆ࠍ2୚ߦߒߥߌࠇ߫ߥࠄߥ޿

ߪߕߢ޽ࠆ߇ޔታ㓙ߦߪࡑࠗࠢࡠᵄࡄࡢ࡯ࠍ2୚ߦߒ ߚߚ߼ߦ⍹⧷▤ߩ᷷ᐲ਄᣹߇ᄢ߈ߊޔ⌀ⓨࠍ଻ߟߚ߼

ߩࡃࠗ࠻ࡦߩO࡝ࡦࠣ߇ṁߌߡߒ߹޿ޔ⌀ⓨࠍ㐳ߊ଻

ߟߎߣ߇࿎㔍ߦߥߞߚޕߘߩߚ߼ޔᚑ⤑ᤨ㑆ߪߎߩታ 㛎ߦ߅޿ߡߪ10 ᤨ㑆ࠍ㒢⇇ߣߒߚޕߒ߆ߒޔ⍹⧷▤

ߩ಄ළᯏ᭴ࠍᎿᄦߒޔO࡝ࡦࠣઃㄭߩḴߩ಄ළ߽ⴕߞ ߚ⚿ᨐޔ⃻࿷ߢߪᢙ10ᤨ㑆ߩᚑ⤑ߦ߽⠴߃ࠄࠇࠆޕ

⚿ᨐ

࠳ࠗࡗࡕࡦ࠼⭯⤑ߩฦ⒳ಽᨆ⚿ᨐ:

AFMߦࠃࠆಽᨆ

CVD ⵝ ⟎ߦ ࠃ ࠅ ၸ Ⓧ ߒ ߚ ࠳ ࠗ ࡗ ࡕ ࡦ ࠼⭯ ⤑ࠍ AFM(Atomic Force Microprobe)ߦࠃࠅ⹏ଔߒߚ⚿ᨐ ࠍᰴߦ␜ߔޕAFM ߪ⴫㕙ߩಳಲࠍ㜞ᗵᐲߦᬌ಴ߔࠆ ⵝ⟎ߢ޽ࠆޕ

࿑2ߦ⹏ଔߒߚ⴫㕙ߩಳಲࠍ␜ߔޕ⿛ᩏߒߚ▸࿐ߪ 20 µm˜20 µmߩᐢ޿㗔ၞߢ޽ࠆޕ

࿑2Aߪ㜞᷷㜞࿶วᚑၮ᧼ߢ⭯⤑ၸⓍ೨ߩ⴫㕙⁁ᘒ ࠍ⴫ࠊߒߡ޿ࠆޕᭂ߼ߡṖࠄ߆ߥ⴫㕙ߢ޽ࠆߎߣ߇᣿

ࠄ߆ߢ޽ࠆޕ࿑2BߣDߪ⭯⤑ၸⓍᓟߩ႐ᚲࠍᄌ߃ߡ

࿑㧝. ⹜૞ߒߚࡑࠗࠢࡠᵄࡊ࡜࠭ࡑCVDⵝ⟎.

⴫㧝㧚෰ᐕߣ੹ᐕߩታ㛎୯Ყセ

෰ ᐕ ੹ ᐕ ᚑ⤑ᤨ㑆 30ᤨ㑆 10ᤨ㑆 ࡔ࠲ࡦỚᐲ 0.1 % 0.05 %

᳓⚛ᵹ㊂ 200 sccm 400 sccm

ࡔ࠲ࡦᵹ㊂ 0.2 sccm 0.2 sccm ࡑࠗࠢࡠᵄ㔚ജ 500 W 750 W

࿶ ജ 25 Torr (⚂3.3 kPa) ၮ᧼᷷ᐲ ⚂800 ͠

(4)

᷹ቯߒߚ⴫㕙⁁ᘒߢ޽ࠆޕ࿑2Bߦ߅޿ߡߪ㍈޿⓭⿠

߇ᐞߟ߆᷹ⷰߐࠇߡ޿ࠆޕ࿑2DߪᲧセ⊛Ṗࠄ߆ߥ㗔

ၞࠍ᷹ⷰߒߡ޿ࠆ௝ߢ޽ࠆޕࡌ࡯ࠬߦߥࠆㇱಽߦ߆ߥ ࠅᐢ޿߁ߨࠅ㧔ᢙ10 µmߩ▸࿐ߢࠦࡦࡑᢙǴ㨙ߩ㜞ߐ ߩ⿠ફ߇⷗߃ࠆ㧕߇᷹ⷰߐࠇߡ޿ࠆ߇ޔ⓭⿠ߪᭂ߼ߡ వ㍈ߦᚑ㐳ߒߡ޿ࠆޕ࿑2Cߦߪᤓᐕᐲߩ᧦ઙߢၸⓍ

ߒߚߣ߈ߩ⴫㕙⁁ᘒࠍ␜ߔޕᤓᐕᐲߩ᧦ઙߣߪ⴫㧝Ꮐ ߦ␜ߒߚ᧦ઙߢ޽ࠆޕ

㕖Ᏹߦ᣿ࠄ߆ߥࠃ߁ߦᤓᐕᐲߦ߅޿ߡߪ⤑߇ᚑ㐳ߒߡ

޿ࠆߣ޿߁ᒻ〔ߪߥߊޔፉ⁁ߦߚߊߐࠎߩ⓭⿠‛߇ᚑ 㐳ߒߡ޿ࠆߣ޿߁ࠗࡔ࡯ࠫߩᣇ߇ᒝ޿ޕᤓᐕߣ੹࿁ߩ ၸⓍ᧦ઙߩਛߢᄢ߈ߊ⇣ߥࠆߩߪࡑࠗࠢࡠᵄࡄࡢ࡯ߢ

޽ࠆޕᤓᐕ500 Wߢ޽ߞߚ߇੹࿁ߪ750 Wߦ਄᣹ߐ ߖߚޕߎࠇߦࠃࠅࡊ࡜࠭ࡑኒᐲ߇਄᣹ߒߚߎߣߪ㑆㆑

޿ߥ޿ޕࡔ࠲ࡦࠟࠬߣ᳓⚛ࠟࠬߩᵹ㊂Ყߪ೨࿁߇0.1%

ߥߩߦኻߒߡ੹࿁ߪ0.05%ߢ޽ࠆޕߎߩ2୚ߩᏅߪ⴫

㕙ߩᒻ⁁ߦᄢ߈ߥᓇ㗀ߪਈ߃ߥ޿ߣᕁࠊࠇࠆޕߎߩᵹ

㊂Ყߪ߻ߒࠈᚑ㐳ㅦᐲߦᄢ߈ߊᓇ㗀ߒߡߊࠆ࿃ሶߛ߆ ࠄߢ޽ࠆޕ޿ߕࠇߦߒࠈᤓᐕᐲߣߪᩰᲑߦ⴫㕙⁁ᘒߩ ఝࠇߚ࠳ࠗࡗࡕࡦ࠼⭯⤑߇ᚑ㐳ߢ߈ߚޕ

࿑3ߦ࿑2ࠃࠅ߽ᦝߦ⁜޿▸࿐ߢ޽ࠆ2 µm˜2 µm ߩ㗔ၞߦߟ޿ߡ᷹ⷰߒߚAFM௝ࠍ␜ߔޕ࿑2Aߪၸ

Ⓧ೨ߩၮ᧼ޔ࿑2Bߪ੹࿁ߩ᧦ઙߢၸⓍߒߚ⭯⤑ߩ௝

ߢ޽ࠆޕߎߩ⁜޿▸࿐ߦߥࠆߣ߶߷ၮ᧼ߣห᭽ߥᭂ߼

ߡᐔမᕈߩఝࠇߚ⭯⤑߇ᚑ㐳ߒߡ޿ࠆߎߣ߇᣿ࠄ߆ߢ

޽ࠆޕએ਄ߦࠃࠅ⴫㕙ᒻ⁁ߛߌߦᵈ⋡ߔࠇ߫ޔᤓᐕࠃ ࠅ߽ᭂ߼ߡ⦟ᅢߥ⤑߇ᚑ㐳ߒߡ޿ࠆߎߣ߇⏕⹺ߢ߈ߚޕ ߒ߆ߒޔߎߩಽᨆ⹏ଔߛߌߢߪ✚ว⊛ߦ૗ߣ߽⸒߃ߥ

޿ߩߢޔᦝߦઁߩಽᨆᣇᴺߢCVD࠳ࠗࡗࡕࡦ࠼⭯⤑

ߩ⹏ଔࠍⴕ߁ߎߣߦߒߚޕ

࿑2. 20 µm˜20 µmߩᐢ޿㗔ၞߦ߅޿ߡ⿛ᩏߒߚฦ⒳⹜ᢱߩAFM௝. A. Ibဳ࠳ࠗࡗࡕࡦ࠼ၮ᧼(ᚑ㐳ήߒ).

B. 10ᤨ㑆ᚑ㐳(⇣Ᏹߥಳಲ߇⏕⹺ߢ߈ߚㇱಽ). C. 30ᤨ㑆(෰ᐕ). D. 10ᤨ㑆ᚑ㐳(Ყセ⊛ᐔမߥㇱಽ).

A

600nm

400nm

B

250nm

C

250nm

D

(5)

䊤䊙䊮ಽశ᷹ቯ⚿ᨐ

㪇 㪈㪇㪇㪇 㪉㪇㪇㪇 㪊㪇㪇㪇 㪋㪇㪇㪇

㪇 㪌㪇㪇 㪈㪇㪇㪇 㪈㪌㪇㪇 㪉㪇㪇㪇 㪉㪌㪇㪇

䉦䉟䉱䊷䋨䋱㪆ᵄ㐳㪲㪺㫄㪴䋩

శ㊂ 㸇䌢ဳၮ᧼

䋱䋰ᤨ㑆䋨੹ᐕ䋩 䋳䋰ᤨ㑆䋨෰ᐕ䋩

㪇 㪈㪇㪇㪇 㪉㪇㪇㪇 㪊㪇㪇㪇 㪋㪇㪇㪇

㪈㪊㪇㪇 㪈㪊㪊㪊 㪈㪊㪍㪍

࿑4. ࡜ࡑࡦࠬࡍࠢ࠻࡞ߩ᷹ቯ⚿ᨐ߅ࠃ߮᜛ᄢ࿑. 250nm

200nm 200nm

࿑3. 20 µm˜20 µmߩ⁜޿㗔ၞߦ߅޿ߡ⿛ᩏߒߚAFM௝. A. Ibဳ࠳ࠗࡗࡕࡦ࠼ၮ᧼(ᚑ㐳ήߒ). B. 10ᤨ 㑆ᚑ㐳.

A B

(6)

࡜ࡑࡦಽశᴺߦࠃࠆಽᨆ

࠳ࠗࡗࡕࡦ࠼ߩ⚿᥏ᕈࠍ⹏ଔߔࠆ਄ߢ㕖Ᏹߦ◲ଢߦ᷹

ቯߔࠆᣇᴺߩ৻ߟ߇࡜ࡑࡦᢔੂಽశߢ޽ࠆޕߎߩ⹏ଔ ᣇᴺߩේℂߦߟ޿ߡ⹦⚦ߦߪㅀߴߥ޿߇ޔ1333/cmߩ

૏⟎ߦ㍈޿ࡇ࡯ࠢ߇᷹ⷰߐࠇࠆޕߎࠇߦࠃߞߡ࠳ࠗࡗ ࡕࡦ࠼ߩන⚿᥏߇ᒻᚑߐࠇߡ޿ࠆ߆ߤ߁߆ࠍ್ᢿߢ߈ ࠆޕਛ↰⎇ⓥቶߢߪ੹ᐕᐲ◲ଢߥ࡜ࡑࡦᢔੂಽశⵝ⟎

ࠍዉ౉ߒߚޕಽ⸃⢻ߪ10/cm⒟ᐲߢ޽ࠆ߇ޔᭂ߼ߡ◲

ଢߥขࠅᛒ޿ᣇߢ࡜ࡑࡦࠬࡍࠢ࠻࡞߇᷹ⷰߢ߈ࠆޕ

࿑4ߦ᷹ቯߒߚ࡜ࡑࡦࠬࡍࠢ࠻࡞ࠍ␜ߔޕ࿑4ߩ਄

ߩࠬࡍࠢ࠻࡞ߪ࡜ࡑࡦࠪࡈ࠻ߩᵄᢙ 2500/cm ߹ߢߩ

▸࿐ߢ᷹ቯߒߚᤓᐕߩ⹜ᢱߣ੹࿁ߩ⹜ᢱޔᦝߦ࡟ࡈࠔ

࡟ࡦࠬߣߒߡ Ib ࠲ࠗࡊߩ㜞᷷㜞࿶วᚑၮ᧼ߩࠬࡍࠢ

࠻࡞ࠍ␜ߔޕߎߩࠬࡍࠢ࠻࡞߆ࠄ᣿ࠄ߆ߥࠃ߁ߦޔIb ၮ᧼⹜ᢱߣ੹࿁ߩ⹜ᢱߢߪ࠳ࠗࡗࡕࡦ࠼න⚿᥏․᦭ߩ

1333/cmߩ૏⟎ߦ㍈޿ࡇ࡯ࠢ߇᷹ⷰߢ߈ߚޕߎࠇߦࠃ

ࠅၮ᧼ߣห⒟ᐲએ਄ߦ⚿᥏ᕈߩࠃ޿࠳ࠗࡗࡕࡦ࠼⭯⤑

߇ᒻᚑߐࠇߡ޿ࠆน⢻ᕈ߇޽ࠆߎߣ߇ಽ߆ߞߚޕ৻ᣇޔ ᤓᐕᐲߩ᧦ઙߢᒻᚑߒߚ⭯⤑ߪࡇ࡯ࠢᒝᐲ߇ᒙߊޔߒ ߆߽ޔᄢ߈ߥࡃ࠶ࠢࠣ࡜࠙ࡦ࠼ߩ਄ߦሽ࿷ߔࠆޕߎ߁ ߒߡ⚿᥏ᕈߦߟ޿ߡߪᤓᐕᐲߩ⹜ᢱߪ㕖Ᏹߦᖡ޿߇ޔ

੹࿁ߪ⦟ᅢߥ⤑߇ᒻᚑߐࠇߡ޿ࠆޕਅߩࠬࡍࠢ࠻࡞ߪ

1333/cmߩ૏⟎ߩ㍈޿ࡇ࡯ࠢࠍ᜛ᄢߒߚࠬࡍࠢ࠻࡞ߢ

޽ࠆޕၮ᧼ࠃࠅ߽᣿ࠄ߆ߦඨ୯᏷߇ዊߐ޿ࠬࡍࠢ࠻࡞

߇ᓧࠄࠇߡ߅ࠅޔၮ᧼એ਄ߩ⦟ᅢߥ⚿᥏ᕈ߇଻ߚࠇߡ

޿ࠆߎߣࠍᒝߊ␜ໂߒߡ޿ࠆޕએ਄ߩ⚿ᨐ߆ࠄ⚿᥏ᕈ ߦఝࠇޔ⴫㕙߽Ყセ⊛ᐔမߢ޽ࠆ࠳ࠗࡗࡕࡦ࠼⭯⤑߇ ᒻᚑߢ߈ߚߣᕁࠊࠇࠆ߇ޔߐࠄߦ⤑ਛߦሽ࿷ߔࠆਇ⚐

‛ߩಽᏓࠍSIMSಽᨆߣ޿߁ᚻᴺࠍ૶ߞߡ⋥ធ⹏ଔߒ ߚޕߎߩᣇᴺߪ Cs ߩ㧝ᰴࠗࠝࡦࡆ࡯ࡓࠍ⹜ᢱ⴫㕙ߦ ᾖ኿ߒߡ⴫㕙ࠍࠬࡄ࠶࠲࡝ࡦࠣߒߥ߇ࠄⓣࠍជࠅޔߘ ߩᤨ಴ߡߊࠆฦ⒳㧞ᰴࠗࠝࡦࡆ࡯ࡓᒝᐲࠍ⾰㊂ಽᨆߔ ࠆߎߣߦࠃࠅޔᓸ㊂ߥਇ⚐‛ಽᏓࠍ᷹ቯߔࠆᚻᴺߢ޽

ࠆޕ

SIMSߦࠃࠆಽᨆ

࿑5Aߪ8 keV Csࠗࠝࡦࠍ㧝ᰴࡆ࡯ࡓߣߒߡޔ45q ߩⷺᐲ߆ࠄ⹜ᢱߦᾖ኿ߒߡࠬࡄ࠶࠲࡝ࡦࠣߒߥ߇ࠄ಴

ߡߊࠆ㧞ᰴࠗࠝࡦࠍ⾰㊂ಽᨆߒߚࠬࡍࠢ࠻࡞ߢ޽ࠆޕ

࠳ࠗࡗࡕࡦ࠼⭯⤑ਛߦߪฦ⒳ਇ⚐‛߇ᷙ౉ߐࠇߡ޿ࠆ ߣᕁࠊࠇࠆ߇ޔ․ߦNਇ⚐‛ߦᵈ⋡ߒߡ޿ࠆޕߣ޿߁ ߩߪ࠳ࠗࡗࡕࡦ࠼CVD⤑ߦߪⓨ᳇ਛߩ⓸⚛ߦ⿠࿃ߔ ࠆਇ⚐‛ᷙ౉߇㕖Ᏹߦ⿠߈߿ߔ޿ߎߣ߇⍮ࠄࠇߡ޿ࠆ ߆ࠄߢ޽ࠆޕ

ታ㓙ޔ㜞᷷㜞࿶วᚑၮ᧼ߦ߅޿ߡߪⓨ᳇ਛߩ⓸⚛ߦ

⿠࿃ߔࠆ⓸⚛ਇ⚐‛߇100-200 ppm⒟ᐲ฽᦭ߐࠇߡ

޿ࠆޕⓨ᳇ਛߩ㉄⚛ߪ޽߹ࠅขࠅㄟ߹ࠇߡ޿ߥ޿ࠃ߁ ߢ޽ࠆ߇ޔCVD ⭯⤑ߦ߅޿ߡ߽ߎߩ⓸⚛ਇ⚐‛߇ߤ ߩ⒟ᐲ฽߹ࠇߡ޿ࠆ߆ߪ㕖Ᏹߦ⥝๧޽ࠆߣߎࠈߢ޽ࠅޔ

․ߦߎߩర⚛ߦᵈ⋡ߒߡߺࠆޕ

࿑5Aߪฦ⒳⾰㊂ᢙࠍᜬߞߚᄙේሶಽሶߩ㧞ᰴࠗࠝ

ࡦᒝᐲಽᏓߢ޽ࠆޕᮮゲߪᷓߐߢ޽ࠆޕߎߎߢ⓸⚛ේ

ሶߩਇ⚐‛ಽᏓࠍ᷹ቯߔࠆ႐วޔ14ߣ޿߁⾰㊂ᢙߩේ

ሶࠍߘߩ߹߹᷹ቯߔࠆߣޕࡃ࠶ࠢࠣ࡜࠙ࡦ࠼ߣߒߡᄙ ߊሽ࿷ߔࠆߢ޽ࠈ߁ CHᄙේሶಽሶߣ඙೎߇ߟ߆ߥ

޿ޕߘߎߢޔ13C14Nߣ޿߁⾰㊂ᢙ27ߩᄙේሶಽሶߦ ᵈ⋡ߔࠆޕߎߩಽሶߪ13Cߣ޿߁ㅢᏱߩ12Cߣߪ⥄ὼ

⇇ሽ࿷Ყߢ1%ߣ޿߁ᓸ㊂ర⚛ߢ޽ࠆCߣNߩᄙේሶ ಽሶߢ޽ࠆޕߎࠇߪࡃ࠶ࠢࠣ࡜࠙࠙ࡦ࠼ߣߒߡ⾰㊂ᢙ 14ߢ޽ࠆ12CH2ࠃࠅ㆝߆ߦዋߥ޿ߢ޽ࠈ߁߆ࠄޔߎߩ ಽᏓ߇⓸⚛ේሶߩಽᏓߦᲧ଀ߒߡ޿ࠆߣ⠨߃ࠄࠇࠆޕ ߐࠄߦޔ⾰㊂ᢙ26ߢ޽ࠆ12C14Nᄙේሶಽሶߣޔ߽ߒ 㧞ᰴࠗࠝࡦᒝᐲᲧߢ100:1ߣߥߞߡ޿ࠇ߫ޔ⏕ታߦ਄

⸥ᄙේሶಽሶߩ⋧ኻ⊛ಽᏓߪ N ේሶߩಽᏓࠍᔘታߦ

⴫⃻ߒߡ޿ࠆߎߣߦߥࠆޕߘߩࠃ߁ߥⷰὐߦ┙ߞߡ࿑

5A ࠍ⌑߼ࠆߣ⏕߆ߦਔಽᏓߪߜࠂ߁ߤ100:1 ߩഀว ߦߥߞߡ߅ࠅޔNේሶಽᏓࠍౣ⃻ߒߚ߽ߩߢ޽ࠆߎߣ ߇⏕ାߢ߈ࠆޕߎߩ࿑ߢߪ᣿ࠄ߆ߢߥ޿߇ޔ⾰㊂ ᢙ26ߣ27ߩಽᏓߦ߅޿ߡ0.6 µmઃㄭࠍ᜛ᄢߒߚ߽

ߩ߇ޔ࿑5BޔCߢ޽ࠆޕ

࿑5Bߪ⾰㊂ᢙ26ߩ12C14NᄙේሶಽᏓߢ޽ࠅޔ࿑

5Cߪ⾰㊂ᢙ27ߩ13C14NᄙේሶಽሶಽᏓߢ޽ࠆޕߣ

߽ߦޔ0.6 µmઃㄭߩỚᐲߦᲑᏅ߇⷗ࠄࠇࠆ㨫ߎߩ0.6 µm ߣ޿߁ᷓߐ߇CVD ࠳ࠗࡗࡕࡦ࠼⭯⤑ߣၮ᧼ߣߩ

⇇㕙ߢ޽ࠆޕ૗᡿ߥࠄޔၮ᧼ߦ߅޿ߡߪ⓸⚛߇㜞Ớᐲ ߦ฽߹ࠇߡ߅ࠅ,⭯⤑ߦߪ⓸⚛Ớᐲ߇ߘࠇࠃࠅዋߥ޿

ߎߣ߇ᦼᓙߐࠇࠆ߆ࠄߢ޽ࠆޕ

ߒ߆ߒޔ࿑ 5BޔC ߦ߅޿ߡ᣿ࠄ߆ߥࠃ߁ߦޔၮ᧼

ߣ⤑ߩ⓸⚛ỚᐲᏅߪ޽߹ࠅ㗼⪺ߢߪߥ޿ࠃ߁ߦᕁࠊࠇ ࠆޕ߽ߒޔ⤑ਛ⓸⚛Ớᐲ߇1 ppmએਅߢ޽ࠇ߫ޔዋߥ ߊߣ߽ၮ᧼ߦ100 ppm⒟ᐲ฽᦭ߐࠇߡ޿ࠆߩ޽ࠇ߫ޔ

⇇㕙ߦ߅޿ߡ㧞ᩴ⒟ᐲ㧞ᰴࠗࠝࡦᒝᐲߦᲑᏅ߇޽ߞߡ ߒ߆ࠆߴ߈ߣᕁࠊࠇࠆޕߣߎࠈ߇ޔ࿑㧡BޔC ߦ␜ߔ ࠃ߁ߦߘࠎߥߦ㧞ᰴࠗࠝࡦᒝᐲߦᏅߪߥ޿ޕߎߩේ࿃

ߪታߪޔᏎߊਛߦᄙ㊂ߩ⓸⚛ਇ⚐‛߇฽߹ࠇߡ޿ࠆߣ

޿߁ߎߣߢߪߥߊ,߻ߒࠈޔSIMSߩ᷹ቯ਄ߩ໧㗴ߢ޽

ࠆߎߣࠍޔᓟߦ⼏⺰ߔࠆޕ޿ߕࠇߦߒࠈޔߎߎߢ᣿ࠄ ߆ߦߥߞߚߎߣߪCVD⭯⤑ߪෘߐ߇0.6 µm⒟ᐲ޽ࠅޔ ၮ᧼ਛࠃࠅ⓸⚛ਇ⚐‛Ớᐲߪૐᷫߒߡ޿ࠆߣ޿߁ߎߣ ߢ޽ࠆޕᰴߦᦨᓟߩಽᨆ᷹ቯߣߒߡ Hall ലᨐ᷹ቯ⚿

ᨐࠍ␜ߔޕ

(7)

Hallലᨐ᷹ቯߦࠃࠆಽᨆ

Hall ലᨐ᷹ቯⵝ⟎ߪ⹜ᢱߩ㔚᳇⊛․ᕈࠍ᷹ቯߔࠆⵝ

⟎ߢޔ⏛႐ਛߢ⹜ᢱߦ㔚ᵹࠍᵹߔߎߣߦࠃࠅޔࡠ࡯࡟

ࡦ࠷ജߢ㔚ᵹ߇⹜ᢱਛߢ஍ࠅޔߘߩߣ߈ബ⿠ߐࠇࠆ㔚

࿶ߩ╓ภߢ⹜ᢱਛࠍᵹࠇࠆ㔚ᵹߩᜂ޿ᚻ߇㔚ሶߢ޽ࠆ ߆ᱜሹߢ޽ࠆ߆ࠍ್ቯߔࠆ᷹ቯᴺߢ޽ࠆޕහߜޔඨዉ

૕ߢ޽ࠇ߫⹜ᢱߩዉ㔚࠲ࠗࡊ߇Pဳߢ޽ࠆ߆ޔNဳߢ

޽ࠆ߆ࠍ್ቯߔࠆޕߘߩઁߦ߽ࠪ࡯࠻ᛶ᛫ߩ୯ޔࠪ࡯

࠻ࠠࡖ࡝ࠕỚᐲޔ⒖േᐲ╬߇᷹ቯߢ߈ࠆޕ

࿑6Aߪࠪ࡯࠻ᛶ᛫ߩ⛘ኻ᷷ᐲߩㅒᢙଐሽᕈࠍ␜ߔ

ࠣ࡜ࡈߢ޽ࠆޕ⿒޿ਃⷺශ߇੹࿁૞⵾ߒߚCVD⹜ᢱ ߩ⚿ᨐߢ޽ࠅޔ✛ߩਃⷺශ߇↥✚⎇ߢએ೨૞⵾ߒߚ CVD ⹜ᢱߩ↥✚⎇ߢߩ᷹ቯ⚿ᨐߢ޽ࠆޕ߹ߚޔ㕍⦡

ߩ྾ⷺශߪ↥✚⎇ߢ᷹ቯߒߚ Ib ၮ᧼⹜ᢱߩ᷹ቯ⚿ᨐ ߢ޽ࠆޕߎߩ࿑߆ࠄ᣿ࠄ߆ߥࠃ߁ߦޔ੹࿁૞⵾ߒߚ⹜

ᢱߢߪ300͠ઃㄭࠍႺߦ௑߈߇ᄢ߈޿᷷ᐲ㗔ၞߣޔዊ

ߐ޿㗔ၞߣߦಽࠇߡ޿ࠆߎߣ߇ಽ߆ࠆޕ߹ߚޔ500͠

ઃㄭߢ᷹ቯ୯߇⇣Ᏹߥ୯ࠍ␜ߒߡ޿ࠆὐ߇޽ࠆ߇ޔߎ ߩ․⇣ὐߪᓟߦ␜ߔࠪ࡯࠻ࠠࡖ࡝ࠕỚᐲߩ᷷ᐲଐሽᕈ ߦ߅޿ߡ߽ޔ⒖േᐲߩ᷷ᐲଐሽᕈߦ߅޿ߡ߽᷹ⷰߐࠇ ߡ޿ࠆߩߢޔ૗ࠄ߆ߩ᷹ቯ਄ߩ໧㗴߇⿠ߎߞߚߣ⠨߃ ߡ޿ࠆޕ

300͠ઃㄭ߆ࠄߤߩ⹜ᢱߦ߅޿ߡ߽⷗ࠄࠇࠆ㜞᷷㗔

ၞߢ௑߈߇ᄢ߈޿ᵴᕈൻࠛࡀ࡞ࠡ࡯ߩ୯ߪ1.4-1.7 eV ߢ޽ࠆޕߎࠇߪ੹࿁ᚒޘ߇⵾૞ߒߚCVD⹜ᢱߦߟ޿

ߡߪޔߘߩਛߦ฽߹ࠇߡ޿ࠆ߆߽ߒࠇߥ޿ᓸ㊂ߩ⓸⚛

㧔߅ߘࠄߊ1 ppmએਅ㧕߇ᵴᕈൻߒߚߎߣߦࠃࠅ↢ᚑ ߐࠇߚࠠࡖ࡝ࠕ㧔㔚ሶ㧕ߦၮߠ޿ߚࠛࡀ࡞ࠡ࡯ࠍ␜ߒ ߡ޿ࠆߣᕁࠊࠇࠆޕߒ߆ߒޔSIMSಽᨆߩ㗄ߢ߽ㅀߴ ߚࠃ߁ߦޔ⤑ෘ߇0.6 µmߣ⭯޿ߚ߼ޔၮ᧼ߢᵴᕈൻ ߒߚ⓸⚛ࠠࡖ࡝ࠕ߇⭯⤑߹ߢ࿁ߞߡࠠࡖ࡝ࠕࠍଏ⛎ߒ ߚน⢻ᕈࠍุቯߒ߈ࠇࠆ߽ߩߢߪߥ޿ޕߎߩ㜞᷷㗔ၞ

࿑5. A.10ᤨ㑆ᚑ㐳⤑ߩSIMSಽᨆ⚿ᨐ. B. 12㧯14㧺ࠬࡍࠢ࠻࡞(A࿑Ԙ)ߩ᜛ᄢ࿑. C. 13C14Nࠬࡍ

ࠢ࠻࡞(B࿑ԙ)ߩ᜛ᄢ࿑. 㪈㪜㪂㪉

㪈㪜㪂㪊 㪈㪜㪂㪋 㪈㪜㪂㪌 㪈㪜㪂㪍 㪈㪜㪂㪎

㪇㪅㪍 㪈㪅㪉 㪈㪅㪏 㪉㪅㪋

ᷓ䈘㪲㫄㫄㪴

ੑᰴ䉟䉥䊮ᒝᐲ㪲㪺㫋㫊㪆㫊㪴䇭䇭䇭䇭㪅

㪈㪟 㪈㪊㪚 㪈㪍㪦 㪈㪐㪝 㪉㪏㪪㫀 㪉㪐㪪㫀

㪊㪈㪧 㪊㪌㪚㫃 㪉㪍㩿㪚㪥㪀 㪉㪎㩿㪈㪊㪚㪥㪀 㪊㪎㩿㪚㪊㪀

ԙ Ԙ

㪈㪜㪂㪍 㪉㪜㪂㪍

㪇 㪇㪅㪍 㪈㪅㪉 㪈㪅㪏

㪊㪜㪂㪋 㪊㪜㪂㪋

㪇 㪇㪅㪍 㪈㪅㪉 㪈㪅㪏

26(1214㧺)(⓸⚛)

27(1314㧺)(⓸⚛)

A

B C

ੑᰴࠗࠝࡦᒝᐲ=EVUU?ੑᰴࠗࠝࡦᒝᐲ=EVUU?

ᷓߐ=OO? ᷓߐ=OO?

ᷓߐ=OO?

(8)

ߦ߅޿ߡߪߔߴߡߩ⹜ᢱߢNဳࠍ␜ߒߚޕ߹ߚޔߎߩ

⹜ᢱߦߟ޿ߡߩૐ᷷஥ߢߩૐᵴᕈൻࠛࡀ࡞ࠡ࡯ߪ 0.2-0.3 eVߢ޽ߞߚޕߘߒߡޔߎߩૐ᷷㗔ၞߢߪNဳޔ P ဳߩ್೎ߪߢ߈ߥ߆ߞߚޕ↥✚⎇ߢᒻᚑߒߚ CVD

⭯⤑ߦߟ޿ߡߩ᷹ቯ࠺࡯࠲ߢߪ㜞᷷㗔ၞ߆ࠄૐ᷷㗔ၞ

ߦ⥋ࠆ߹ߢ߶߷ 1.4 eV ߩᵴᕈൻࠛࡀ࡞ࠡ࡯ࠍ␜ߒߡ ߅ࠅޔߎߩ୯ߪIbၮ᧼ߩߘࠇߣ߶߷หߓߢ޽ࠆޕߎߩ ߎߣߪ↥✚⎇߇ᒰᤨ㧔1998ᐕ㗃㧕ၸⓍߒߚ⤑ਛߦߪ߆ ߥࠅᄙ㊂ߩ⓸⚛ర⚛߇ਇ⚐‛ߣߒߡ฽߹ࠇߡ޿ߚ㧔ᕟ ࠄߊ100 ppm⒟ᐲ㧕੐ࠍᒝߊ␜ໂߒߡ޿ࠆޕ੹࿁ᚒޘ

߇ᒻᚑߒߚ⤑ਛߦߪዋߥߊߣ߽ߘࠇࠃࠅߪ㆝߆ߦዋߥ

޿⓸⚛ਇ⚐‛ߒ߆฽߹ࠇߡ޿ߥ޿ߎߣࠍ᣿⏕ߦ␜ߒߡ

޿ࠆޕ

࿑6Bߦߪࠪ࡯࠻ࠠࡖ࡝ࠕỚᐲߩ᷷ᐲଐሽᕈࠍ␜ߔޕ

᷷ᐲ߇㜞ߊߥࠆߦߟࠇޔࠪ࡯࠻ࠠࡖ࡝ࠕỚᐲߪ㜞ߊ ߥߞߡ޿ࠆޕૉߒޔࠪ࡯࠻ᛶ᛫ߩࠣ࡜ࡈߣหߓࠃ߁ߦ 500͠ઃㄭߢ᷹ቯὐ߇⇣Ᏹߥ୯ࠍ␜ߒߡ޿ࠆߎߣ߇ࠊ ߆ࠅޔ᷹ቯ਄ߩ໧㗴ߛߣᕁࠊࠇࠆޕ

࿑㧢C ߦࡎ࡯࡞⒖േᐲߩ᷷ᐲଐሽᕈࠍ␜ߔޕ500͠ ߩὐߦ߅޿ߡ⇣Ᏹߥ୯ࠍ␜ߒߡ޿ࠆߩߪઁߩ㧞ߟߩࠣ

࡜ࡈߣหߓߢ޽ࠅޔ᷹ቯ਄૗ࠄ߆ߩ໧㗴߇⊒↢ߒߚߣ ᕁࠊࠇࠆޕ

ߎߩࠣ࡜ࡈ߆ࠄ᣿ࠄ߆ߥߎߣߪ↥✚⎇ߢߩCVD⤑ ߩ⒖േᐲߩ୯ࠃࠅ߽1ᩴㄭߊ㜞޿୯ࠍ␜ߒߡ޿ࠆߣ޿

߁ߎߣߢ޽ࠆޕߎࠇߦࠃࠅޔ⚿᥏ᕈ߇⦟ᅢߢਇ⚐‛߇ ዋߥߊޔᓥߞߡਇ⚐‛߿ᰳ㒱ߦ⿠࿃ߔࠆࠠࡖ࡝ࠕߩᢔ

ੂ࿃ሶ߇ዋߥߊޔ㜞޿⒖േᐲࠍ⏕଻ߒߡ޿ࠆߣ޿߁ߎ ߣ߆ࠄޔ⦟ᅢߥ⤑⾰ߩCVD⤑߇ᒻᚑߐࠇߡ޿ࠆߣ੍

᷹ߐࠇࠆޕ

એ਄ߩޔAFMޔ࡜ࡑࡦᢔੂޔSIMSಽᨆޔࡎ࡯࡞ല ᨐ᷹ቯߩ⚿ᨐࠍ〯߹߃ޔ޿߆ߦ੹࿁ၸⓍߒߚCVD࠳

ࠗࡗࡕࡦ࠼⭯⤑ߩᕈ⾰ࠍ⼏⺰ߔࠆޕ

⸛⺰

ࠞ࡯ࡏࡦ࠽ࡁ࠴ࡘ࡯ࡉᒻᚑߩᬌ⸛

వߕޔAFMߩ⚿ᨐ߆ࠄዉ߆ࠇࠆၮ᧼ࠍ฽߼ߚCVD⭯

⤑ߩ᭴ㅧߪએਅߩࠃ߁ߦߥߞߡ޿ࠆߣ⠨߃ࠄࠇࠆޕ ᏷ᢙ10 µm ߢ㜞ߐ߇ࠦࡦࡑᢙµm⒟ᐲߩ߁ߨࠅࠍ ᜬߞߚၮ᧼਄ߦߘࠇߣᐔⴕߒߡ⤑ෘ 0.6 µm ⒟ᐲߩ CVD ⤑߇ᒻᚑߐࠇߡ޿ࠆޕߘߩ⤑਄ߦᚲޘಾࠅ┙ߞ ߚ⓭⿠߇᷹ⷰߐࠇࠆޕߎߩ⓭⿠ߦߟ޿ߡߪᕟࠄߊࠞ࡯

ࡏࡦ࠽ࡁ࠴ࡘ࡯ࡉ߇ᒻᚑߐࠇߚ߽ߩߣ⠨߃ߡ޿ࠆ߇ޔ

⹦⚦ߪᓟߦ⼏⺰ߔࠆޕ

᏷ᢙ10 µmߢ㜞ߐ߇ࠦࡦࡑᢙµm⒟ᐲߩ߁ߨࠅࠍ

࿑7. ၸⓍߒߚ࠳ࠗࡗࡕࡦ࠼⭯⤑ߩ᭴ㅧ.

⭯⤑

ၮ᧼

0.6 µm

ᢙ µmߩ߁ߨࠅ

ࠞ࡯ࡏࡦ࠽ࡁ࠴ࡘ࡯ࡉ

䉲䊷䊃䉨䊞䊥䉝Ớᐲ䈱᷷ᐲଐሽᕈ

㪈㪅㪇㪜㪂㪇㪊 㪈㪅㪇㪜㪂㪇㪋 㪈㪅㪇㪜㪂㪇㪌 㪈㪅㪇㪜㪂㪇㪍 㪈㪅㪇㪜㪂㪇㪎 㪈㪅㪇㪜㪂㪇㪏 㪈㪅㪇㪜㪂㪇㪐 㪈㪅㪇㪜㪂㪈㪇 㪈㪅㪇㪜㪂㪈㪈 㪈㪅㪇㪜㪂㪈㪉 㪈㪅㪇㪜㪂㪈㪊

㪈㪇㪇㪇㪆㪫㩷㪲㩷㪈㪆㪢㩷㪴

䉲䊷䊞䊥䉝Ớᐲ㪲㪆䂔㪴

䋱䋰ᤨ㑆䋨␹ᄢ䋩 㸇䌢ၮ᧼䋨↥✚⎇䋩

↥✚⎇䈪䈱୯

䉲䊷䊃ᛶ᛫䈱᷷ᐲଐሽᕈ

㪈㪅㪇㪜㪂㪇㪊 㪈㪅㪇㪜㪂㪇㪋 㪈㪅㪇㪜㪂㪇㪌 㪈㪅㪇㪜㪂㪇㪍 㪈㪅㪇㪜㪂㪇㪎 㪈㪅㪇㪜㪂㪇㪏 㪈㪅㪇㪜㪂㪇㪐 㪈㪅㪇㪜㪂㪈㪇 㪈㪅㪇㪜㪂㪈㪈 㪈㪅㪇㪜㪂㪈㪉 㪈㪅㪇㪜㪂㪈㪊

㪈㪇㪇㪇㪆㪫㩷㪲㩷㪈㪆㪢㩷㪴

䉲䊷䊃ᛶ᛫㪲㱅㪆䂔㪴

䋱䋰ᤨ㑆䋨␹ᄢ䋩 㸇䌢ၮ᧼䋨↥✚⎇䋩

↥✚⎇䈪䈱୯

࿑6. A. ࠪ࡯࠻ᛶ᛫ߩ᷷ᐲଐሽᕈ. B. ࠪ࡯࠻ࠠࡖ࡝ࠕỚᐲ ߩ᷷ᐲଐሽᕈ. C. Hall⒖േᐲߩ᷷ᐲଐሽᕈ.

䊖䊷䊦⒖േᐲ䈱᷷ᐲଐሽᕈ

㪈㪅㪇㪜㪂㪇㪇 㪈㪅㪇㪜㪂㪇㪈 㪈㪅㪇㪜㪂㪇㪉 㪈㪅㪇㪜㪂㪇㪊 㪈㪅㪇㪜㪂㪇㪋

㪈㪇㪇㪇㪆㪫㩷㪲㩷㪈㪆㪢㩷㪴

䊖䊷䊦⒖േᐲ㪲㪺㫄㪉㪆㪭㫊㪴

䋱䋰ᤨ㑆㸇䌢䋨↥✚⎇䋩

↥✚⎇䈪䈱୯

A

B

C

(9)

ᜬߞߚၮ᧼ߣ޿߁ߩߪ࿑2B߿Dߦ␜ߐࠇߚAFM௝ ߆ࠄ㘃ផߒߚ߽ߩߢ޽ࠆޕߎߩᤨޔ᷹ⷰߐࠇߚ⓭⿠‛

ߩේ࿃ߢ޽ࠆ߇࠳ࠗࡗࡕࡦ࠼߇⓭⿠⁁ߦᚑ㐳ߔࠆߣߪ

⠨߃ߦߊ޿ޕࠞ࡯ࡏࡦේሶߢ᭴ᚑߐࠇߡ޿ࠆ૗ࠄ߆ߩ

᭴ㅧߣᕁࠊࠇࠆޕߎߎߢ⠨߃ࠄࠇࠆ৻ߟߩน⢻ᕈߣߒ ߡޔࠞ࡯ࡏࡦ࠽ࡁ࠴ࡘ࡯ࡉ߇ᒻᚑߐࠇߡ޿ࠆߩߢߪߥ

޿߆ߣផኤߒߡ޿ࠆޕߣ޿߁ߩߪㅢᏱࡎࡕࠛࡇ࠲ࠠ

ࠪࡖ࡞࠳ࠗࡗࡕࡦ࠼⭯⤑ࠍCVDߢวᚑߔࠆ႐วޔࡔ

࠲ࡦỚᐲ߇ᢙ%㜞Ớᐲߩ႐วߦߪࠞ࡯ࡏࡦߥߩ࠴ࡘ࡯

ࡉ߇ᒻᚑߐࠇࠆߎߣ߇ಽ߆ߞߡ޿ࠆޕ੹࿁ߩ႐วޔ

0.05%ߣ޿߁ᭂᓸ㊂ߢ޽ࠆߎߣ߆ࠄߘߩน⢻ᕈߪ⭯޿

ߣᕁࠊࠇߚ߇ޔ࠳ࠗࡗࡕࡦ࠼ၮ᧼ߦ⭯⤑ࠍ࠺ࡐߔࠆ೨ ߦၮ᧼ᵞᵺࠍߔࠆᎿ⒟ࠍ੹࿁ߪⴕߞߡ޿ߥ޿ޕߎߩࠃ ߁ߥၮ᧼਄ߦߪᄙߊߩਇ⚐‛ේሶ߇⴫㕙ߦᄙ㊂ߦઃ⌕

ߒߡ޿ࠆߎߣ߇ޔRBS࠴ࡖࡀ࡝ࡦ᷹ࠣቯߦࠃࠅಽ߆ߞ ߡ޿ࠆޕ

࿑8AߦΣbဳ࠳ࠗࡗࡕࡦ࠼ၮ᧼ߩRBS࠴ࡖࡀ࡝ࡦ

ࠣࠬࡍࠢ࠻࡞ࠍޔ߹ߚޔ࿑8BߦΣbဳߣΤaဳ࠳ࠗࡗ ࡕࡦ࠼ၮ᧼ߩ࠴ࡖࡀ࡝ࡦࠣࠬࡍࠢ࠻࡞ࠍ␜ߔޕ

㪈 㪈㪇 㪈㪇 㪈㪇 㪈㪇 㪈㪇

㪌㪇 㪈㪇㪇 㪈㪌㪇 㪉㪇㪇 㪉㪌㪇 㪊㪇㪇 㪊㪌㪇 㪋㪇㪇 㪋㪌㪇

1.0-MeV He, =170°

0°-random [100]-channeling [110]-channeling [111]-channeling

Yield (counts)

Channel number (ch) q

O

Fe,Ni K,Ca

Si S,Cl

Type Ib diamond(1)

(5.7x1013/cm2) (2.7x1013/cm2)

(1.9x1015/cm2)

㪈 㪈㪇 㪈㪇 㪈㪇 㪈㪇 㪈㪇

㪌㪇 㪈㪇㪇 㪈㪌㪇 㪉㪇㪇 㪉㪌㪇 㪊㪇㪇 㪊㪌㪇 㪋㪇㪇 㪋㪌㪇

1.0-MeV He, [100]-channeling = 170°

Ib(1) Ib(2) Ib(1) Ib(3) Ib(3) IIa(1) IIa(2)

Yield (counts)

Channel number (ch) q

Type Ib and IIa diamond

O

Fe,Ni

K,Ca S,Cl Si

Zn,Ga (1.3-1.4x10

15

/cm

2

)

(2.1-2.6x10

15

/cm

2

)

࿑8. A. 㜞᷷㜞࿶วᚑ࠳ࠗࡗࡕࡦ࠼Σbၮ᧼ߩ[100]-,[110]-,[111]-࠴ࡖࡀ࡝ࡦࠣࠬࡍࠢ࠻࡞. B.ฦ⒳Σ bၮ᧼ߣฦ⒳Τaၮ᧼ߩ[100]࠴ࡖࡀ࡝ࡦࠣࠬࡍࠢ࠻࡞.

q = 170 o

q = 170 o

A

B

(10)

RBS (Rutherford Backscattering Spectrometry) ߣߪMeV⚖ߩࠛࡀ࡞ࠡ࡯ߩHeࠗࠝࡦࠍ⹜ᢱߦ౉኿

ߐߖޔRutherfordᓟᣇᢔੂߦࠃࠅޔࡆ࡯ࡓㅴⴕᣇะ߆ ࠄᓟᣇߦᒢᕈᢔੂߐࠇࠆHeࠗࠝࡦᚗ޿ߪਛᕈHeේ ሶߩࠛࡀ࡞ࠡ࡯ࠬࡍࠢ࠻࡞ࠍ᷹ቯߔࠆᚻᴺߢ޽ࠆޕߎ ߩᣇᴺߦࠃࠅޔ⴫㕙߆ࠄޯ1 µm ⒟ᐲߩᷓߐߦሽ࿷ߔ ࠆਇ⚐‛ߩಽᏓࠍ᷹ቯߢ߈ࠆޕ߹ߚޔHe ࠗࠝࡦࠍ㜞

♖ᐲߦࠦ࡝ࡔ࡯࠻ߒߡ⹜ᢱߩ⚿᥏ゲߦᐔⴕߦ౉኿ߐߖ ࠆ࠴ࡖࡀ࡝ࡦࠣߣ⸒߁ᚻᴺߦࠃࠅ⚿᥏ᕈߩ⒟ᐲࠍᷓߐ ᣇะߦ᷹ቯߔࠆߎߣ߽ߢ߈ࠆޕ

ߎߩ RBS᷹ቯߪ⃻࿷᧲੩Ꮏᬺᄢቇᄢጟጊࠠࡖࡦࡄ

ࠬࡧࠔࡦ࠺ࠣ࡜ࡈታ㛎᫟ߦ߅޿ߡⴕߞߡ޿ࠆޕടㅦེ

ᧄ૕ߪޔ᧲Ꮏᄢߩ4.75 MeVࡧࠔࡦ࠺ࠣ࡜ࡈടㅦེࠍ

૶޿ޔ஍ะ㔚⏛⍹ޔ㔚⏛⍹㔚Ḯޔ2ᧄߩࡆ࡯ࡓ࡜ࠗࡦޔ 㧞ߟߩ࠴ࡖࡦࡃ࡯ޔ᷹ቯ♽╬ߪߔߴߡ␹ᄹᎹᄢቇ߆ࠄ ᜬߞߡⴕߞߡ⚵ߺ਄ߍߚޕᐔဋߒߡ㧝ࡩ᦬ߦ5-6ᣣߩ ࡑࠪࡦ࠲ࠗࡓࠍഀࠅᒰߡࠄࠇޔߘߎߢታ㛎ࠍߒߡ޿ࠆޕ

࿑8AޔBߦ␜ߔRBSࠬࡍࠢ࠻࡞ߪ᧲Ꮏᄢߢ᷹ቯߒ ߚ߽ߩߢߪߥߊޔએ೨╩⠪߇NTT‛ᕈ⑼ቇၮ␆⎇ⓥ

ᚲߦ࿷☋ߒߡ޿ߚᤨߦޔ᷹ቯߒߚ࠺࡯࠲ߢ޽ࠆޕ࿑8A ߪΣb ࠲ࠗࡊߩ㜞᷷㜞࿶วᚑ࠳ࠗࡗࡕࡦ࠼ၮ᧼ߩ࡜ࡦ

࠳ࡓࠬࡍࠢ࠻࡞ߣ[100]-,[110]-,[111]-࠴ࡖࡀ࡝ࡦࠣࠬ

ࡍࠢ࠻࡞ߢ޽ࠆޕၮ᧼ߘߩ߽ߩߪ[100]ၮ᧼ߢ޽ࠆޕߎ ߩࠬࡍࠢ࠻࡞ߩ100 chઃㄭએਅߦ߅޿ߡ⃻ࠊࠇߡ޿

ࠆࠬࡍࠢ࠻࡞ߪၮ᧼ߩ὇⚛ේሶ߆ࠄᓟᣇᢔੂߐࠇߡ߈ ߚࡋ࡝࠙ࡓߢ޽ࠆޕ࡜ࡦ࠳ࡓࠬࡍࠢ࠻࡞ߪᄢ߈ߥ෼₸

ߢ޽ࠆ߇ޔ࠴ࡖࡀ࡝ࡦࠣࠬࡍࠢ࠻࡞ߪᓟᣇᢔੂߐࠇࠆ ࡋ࡝࠙ࡓߩ෼₸߇⪭ߜࠆߚ߼ޔࠞ࠙ࡦ࠻ᢙ߇ዋߥߊ ߥߞߡ޿ࠆޕߘߒߡޔၮ᧼ߩ⴫㕙ࡇ࡯ࠢߣ๭߫ࠇࠆ㍈

޿ࡇ࡯ࠢ߇100 chઃㄭߦ᷹ⷰߐࠇࠆޕߎߩࡇ࡯ࠢ߇ ᄢ߈޿߶ߤ⴫㕙߆ࠄᢙේሶጀߩේሶ㈩೉ߩੂࠇ߇ᄢ߈

޿ߣ޿߁ߎߣߦߥࠆޕߘߩઁ㜞ࠛࡀ࡞ࠡ࡯஥㧔࠴ࡖࡀ

࡞ᢙߩᄢ߈޿ㇱಽ㧕ߦ⃻ࠊࠇࠆฦ⒳ߩࡇ࡯ࠢߪޔࠛࡀ

࡞ࠡ࡯଻ሽೣߣㆇേ㊂଻ሽೣߩ2ߟࠍ૶ߞߡߤߩࠃ߁ ߥ⒳㘃ߩේሶ߆ࠄࡋ࡝࠙ࡓ߇ᓟᣇᢔੂߐࠇߡ߈ߚߩ߆ ࠍ෩ኒߥᢙᑼࠍ↪޿ߡ⸘▚ߔࠆߎߣ߇ߢ߈ࠆޕߘࠇߦ ࠃࠅޔฦࡇ࡯ࠢߩ૏⟎ࠍหቯߔࠆߣ150 chઃㄭ߇㉄

⚛ޔ250 chઃㄭ߇ࠪ࡝ࠦࡦߢ޽ࠆߎߣ߇ಽ߆ࠆޕᦝߦޔ 300 chઃㄭ߇ࠞ࡝࠙ࡓ߿ࠞ࡞ࠪ࠙ࡓߢ޽ࠆߎߣޔ340 chઃㄭ߇㋕ޔࠢࡠࡓޔ࠾࠶ࠤ࡞╬ߩర⚛ߢ޽ࠆߎߣ߇ หቯߢ߈ࠆޕߒ߆߽ޔฦ࠴ࡖࡀ࡝ࡦࠣࠬࡍࠢ࠻࡞ࠍ᷹

ቯߔࠆ㓙ޔ⹜ᢱ߇ࡆ࡯ࡓㅴⴕᣇะߦኻߒߡ௑ߊߦ߽㑐 ࠊࠄߕޔࡇ࡯ࠢߩޟ૏⟎߇ᄌൻߒߡ޿ߥ޿ߎߣ߇᣿ࠄ ߆ߢ޽ࠆޕߎࠇߪޔߎࠇࠄߩర⚛߇ၮ᧼ౝㇱߢߪߥߊޔ

⴫㕙ߦઃ⌕ߒߡ޿ࠆਇ⚐‛ߢ޽ࠆߣ޿߁ߎߣࠍ␜ߒߡ

޿ࠆޕታߦᄙߊߩਇ⚐‛ర⚛߇⴫㕙ߦઃ⌕ߒߡ޿ࠆߎ ߣ߇ಽ߆ࠆޕߎࠇࠄߪၮ᧼⾼౉ᤨߘߩ߹߹ߩ⹜ᢱࠍ᷹

ቯߒߚߚ߼ߢ޽ࠅޔ૗ࠄ߆ߩᵞᵺಣℂࠍᣉߔߎߣߦࠃ

ࠅޔ⴫㕙ߦઃ⌕ߒߡ޿ࠆߎࠇࠄర⚛߇ᄢ᏷ߦૐᷫߔࠆ ߎߣ߇ᦼᓙߢ߈ࠆޕߎࠇࠄߩࡇ࡯ࠢߩᄢ߈ߐ㧔㕙Ⓧ㧕 ߆ࠄ⴫㕙ઃ⌕ේሶߩ㕙ኒᐲߩ⛘ኻ୯ࠍ▚಴ߔࠆߎߣ߇ ߢ߈ࠆޕߚߣ߃߫㉄⚛ߪ 1.9˜1015/cm2ߢ޽ࠅޔࠞ࡝

࠙ࡓᚗ޿ߪࠞ࡞ࠪ࠙ࡓߪ 2.7˜1013/cm2ߢ޽ࠅޔ㋕ࠢ

ࡠࡓ࠾࠶ࠤ࡞ߩ㘃ߪ 5.7˜1013/cm2ߢ޽ࠆߎߣ߇▚಴

ߢ߈ࠆޕRBS᷹ቯᴺߦ߅޿ߡߪ㊀ర⚛߶ߤᗵᐲ߇ࠃߊ ᬌ಴ߐࠇࠆޕߎߩ࿑8A߆ࠄ᣿ࠄ߆ߥࠃ߁ߦޔ㋕ޔࠢ

ࡠࡓޔ࠾࠶ࠤ࡞ߩࠃ߁ߥ޿ࠊࠁࠆ㋕ᣖߩర⚛߇㕖Ᏹߦ ᄙߊၮ᧼⴫㕙਄ߦઃ⌕ߒߡ޿ࠆߎߣ߇ಽ߆ࠆޕߎࠇߪޔ 㜞᷷㜞࿶วᚑၮ᧼ࠍ⵾૞ߔࠆᤨޔ⸅ᇦߣߒߡ㋕ߩṁⲢ ṁᶧਛߢวᚑߔࠆߚ߼ߢ޽ࠆޕߒ߆ߒޔၮ᧼ౝㇱߦߪ ߎࠇࠄ⸅ᇦ㊄ዻߪ฽߹ࠇߡ޿ߥ޿ࠃ߁ߢ޽ࠆޕߎߩࠃ ߁ߦ㋕㘃ߩ㊄ዻ߇࠳ࠗࡗࡕࡦ࠼ၮ᧼⴫㕙ߦ߆ߥࠅ㜞Ớ ᐲߦઃ⌕ߒߡ޿ࠆߎߣߦࠃࠅޔߘࠇࠍᩭߣߒߡࠞ࡯ࡏ ࡦ࠽ࡁ࠴ࡘ࡯ࡉ߇ᒻᚑߐࠇߚߩߢߪߥ޿߆ߣផኤߐࠇ ࠆޕ

࿑ 8B ߪ 3 ⒳㘃ߩΣb ၮ᧼ߣ㧞⒳㘃ߩΤa ၮ᧼ߩ

[100]-࠴ࡖࡀ࡝ࡦ᷹ࠣቯߒߚ⚿ᨐࠍ␜ߔࠬࡍࠢ࠻࡞ߢ

޽ࠆޕΤa ၮ᧼ߣߪ㜞᷷㜞࿶วᚑߔࠆ㓙ߦ⓸⚛ਇ⚐‛

ߩขࠅㄟߺ㊂ࠍᭂ߼ߡዋ㊂ߦᛥ߃ࠆวᚑᴺߦࠃࠅ૞⵾

ߒߚၮ᧼ߢ޽ࠆޕߎߩၮ᧼ߦ฽߹ࠇࠆ⓸⚛㊂ߪ1 ppm એਅߢ޽ࠅ,Σbၮ᧼߇⓸⚛ਇ⚐‛ߦࠃࠆ㤛⦡޿⦡ࠍᏪ

߮ߡ޿ࠆߩߦኻߒߡోߊߩή⦡ㅘ᣿ߥ࠳ࠗࡗࡕࡦ࠼ၮ

᧼ߢ޽ࠆޕߎߩ࿑߆ࠄಽ߆ࠆࠃ߁ߦΣb ၮ᧼ߪ㋕ޔࠢ

ࡠࡓޔ࠾࠶ࠤ࡞╬ߩਇ⚐‛߇⹜ᢱߩ㆑޿ߦࠃࠅჇᷫߪ

޽ࠆ߽ߩߩޔ᛼ߒߥߴߡ㜞޿ਇ⚐‛Ớᐲࠍ␜ߒߡ޿ࠆޕ Τa ၮ᧼ߪΣb ၮ᧼ߣᲧセߔࠇ߫⴫㕙ߦઃ⌕ߒߡ޿ࠆ ਇ⚐‛ߪዋߥ޿߽ߩߩ߿ߪࠅޔ߆ߥࠅᄢ߈ߥ㊀ర⚛߇

⴫㕙ߦઃ⌕ߒߡ޿ࠆߎߣߦߪᄌࠊࠅߪߥ޿ޕ޿ߕࠇߦ ߒࠈޔ⴫㕙ߦઃ⌕ߒߡ޿ࠆਇ⚐‛ర⚛ߪᵞᵺಣℂߦࠃ ࠅޔᄢ᏷ߦૐᷫߢ߈ࠆߎߣ߇ᦼᓙߐࠇࠆޕ

ߎࠇࠄ RBS᷹ቯߩ⚿ᨐߦࠃࠅޔ⴫㕙ߦ㜞Ớᐲߦઃ

⌕ߒߡ޿ࠆ㋕㘃ర⚛ߩਇ⚐‛߇ᩭߣߥࠅޔࠞ࡯ࡏࡦ࠽

ࡁ࠴ࡘ࡯ࡉ߇ᒻᚑߐࠇߚ߽ߩ߇AFMߩ᷹ቯ⚿ᨐߦ಴

ߡ߈ߚ⓭⿠ߢ޽ࠆߣផኤߒߡ޿ࠆ߇ޔߎࠇࠄ߇ᧄᒰߦ

ࠞ࡯ࡏࡦ࠽ࡁ࠴ࡘ࡯ࡉߢ޽ࠆ߆ߤ߁߆ߣ޿߁ߎߣߪ੹

ᓟޔTEM ╬ߩᚻᲑߦࠃࠅ⹦⚦ߦᬌ⸛ߒߡࠁ߆ߥߌࠇ

߫ߪߞ߈ࠅߣߒߚ⋥ធߩ⸽᜚ߣߪߥࠄߥ޿ޕ

SIMSಽᨆߩᬌ⸛

SIMSಽᨆߣߪ࿑9ߦ␜ߒߚࠃ߁ߦCsߩࠃ߁ߥ৻ᰴ

ࠗࠝࡦࡆ࡯ࡓࠍૐࠛࡀ࡞ࠡ࡯㧔ᢙkeV㧕ߢᢳ߼߆ࠄ⹜

ᢱߦᾖ኿ߒޔ⴫㕙߆ࠄࠞ࡯ࡏࡦේሶࠍࠬࡄ࠶࠲ߒߥ߇ ࠄⓣࠍជߞߡ޿ߊޕߎߩᤨޔࠬࡄ࠶࠲ߐࠇߚේሶ㧔ᄢ ㇱಽ߇὇⚛ߢ޽ࠆ߇ޔઁߩਇ⚐‛߽ᄙߊ฽߹ࠇࠆ㧕߇ 㘧߮಴ߒߡߊࠆޕߎࠇࠄߩේሶࠍ㔚႐ߣ⏛႐ࠍ⋥ⷺߦ

੤Ꮕߐߖߚ႐ߩਛࠍㅢߔߎߣߦࠃࠅޔ⾰㊂ߩ㆑޿ࠍ

(11)

ಽ㔌ߢ߈ࠆࡑࠬࡈࠖ࡞࠲࡯ࠍㅢߔߎߣߦࠃࠅޔฦ⒳ේ

ሶߦಽ㘃ߒߡߘࠇߙࠇߩ2ᰴࠗࠝࡦᒝᐲࠍ᷹ቯߔࠆߎ ߣ߇ߢ߈ࠆޕ੹࿁ၸⓍߒߚ⤑ਛߦߪΣb ၮ᧼ߩࠃ߁ߦ

⓸⚛ਇ⚐‛߇ᢙ⊖ ppm ߽฽߹ࠇࠆߎߣߪߥ޿ߣᦼᓙ ߒߡ޿ߚߩߢ࿑9ฝ஥ߦ␜ߒߚࠃ߁ߥࠬࡍࠢ࠻࡞ࠍ੍

ᗐߒߡ޿ߚޕߣߎࠈ߇ޔታ㓙ߦߪ࿑5ߦ␜ߒߚࠃ߁ߦ ၮ᧼ߣ⤑ߩ⇇㕙ߦ߅޿ߡ㗼⪺ߥ⓸⚛2ᰴࠗࠝࡦᒝᐲߩ Ꮕߪ⹺߼ࠄࠇߥ߆ߞߚޕߎߎߢታ㓙ߦޔ⤑ਛߦ㜞Ớᐲ ߦ⓸⚛߇฽߹ࠇߡ޿ࠆߩ߆ߤ߁߆ߣ޿߁ߎߣ߇໧㗴ߦ ߥࠆޕ

࿑ 10 ߦታ㓙ߦ᷹ቯߐࠇߚ⓸⚛ࠬࡍࠢ࠻࡞ߩ⤑ਛಽ Ꮣࠍᮨᑼ⊛ߦ␜ߒߚޕࠬࡍࠢ࠻࡞ߩ↢࠺࡯࠲ߪ࿑5A-C ߦ␜ߒߡ޿ࠆޕߎߩ࿑5߆ࠄߪ੹࿁ၸⓍߒߚ⤑ਛߦ߽

߆ߥࠅ㜞Ớᐲߩ⓸⚛ਇ⚐‛߇฽߹ࠇߡ޿ࠆߩߢߪߥ޿

߆ߣᕁࠊࠇࠆ߇ޔታߪߘ߁ߢߪߥ޿ޕAFM ߩឬ௝߆ ࠄIbၮ᧼ߘࠇ⥄૕߇࿑10ߩᏀ஥ߦ␜ߒߚࠃ߁ߥ߆ߥ ࠅߥߛࠄ߆ߥ⿠ફ߇ሽ࿷ߔࠆߎߣ߇ಽ߆ߞߚޕߎࠇߪ

࿑2ߩAFMߩ௝ࠍ⷗ࠆߣ᣿ࠄ߆ߥࠃ߁ߦޔၮ᧼߿ၸ

Ⓧ⤑߇ᢙ10 µm⒟ᐲߩ๟ᦼߢᦨᄢ1 µm⒟ᐲߩ⿠ફࠍ ᜬߞߡ޿ࠆ߆ࠄߢ޽ࠆޕߔࠆߣޔᢳ߼߆ࠄ౉኿ߔࠆCs 㧝ᰴࠗࠝࡦࡆ࡯ࡓߪ⤑ߩ⴫㕙ࠍ৻᭽ߦࠬࡄ࠶࠲ߒߡ޿

ࠆߩߢߪߥߊ,⿠ફߩᓇߦ㓝ࠇߚ㗔ၞߪࠬࡄ࠶࠲ߦࠃ ࠆⓣជࠅㅦᐲ߇ㆃߊߥߞߡ޿ࠆޕߎ߁ߒߡ⴫㕙߇৻᭽

ߦᓂࠇߡ޿ࠆߩߢߪߥߊޔ߆ߥࠅ㗔ၞߦࠃߞߡ߫ࠄߟ

߈߇޽ࠆࠬࡄ࠶࠲ㅦᐲߦߥߞߡ޿ࠆߎߣ߇੍᷹ߐࠇࠆޕ ߔࠆߣޔ৻ᰴࡆ࡯ࡓ߇৻ㇱၮ᧼ߦ೔㆐ߒߡ⓸⚛Ớᐲ߇

਄߇ߞߚߣߒߡ߽ޔઁߩ㗔ၞߪ߹ߛ⤑ਛࠍࠬࡄ࠶࠲ߒ ߡ޿ߡ⓸⚛Ớᐲ߇ዋߥ޿ߦ߽㑐ࠊࠄߕޔో૕ߣߒߡ⤑

ਛߩ⓸⚛Ớᐲ߇⷗߆ߌ਄਄᣹ߒߡ޿ࠆࠃ߁ߦ⷗߃ࠆߎ ߣߦߥࠆޕᓥߞߡޔᱜ⏕ߥ⤑ਛߩ⓸⚛ỚᐲಽᏓࠍ᷹ቯ ߔࠆߚ߼ߦߪ޽ࠄ߆ߓ߼ᐔမߥၮ᧼਄ߦ᐀ࠍၸⓍߐߖ ࠆߎߣ߇ᔅⷐߢ޽ࠆޕ੹࿁ߩ᷹ቯߦ߅޿ߡߪᧄᒰߦ⤑

ਛߩ⓸⚛Ớᐲ߇ၮ᧼ߣᲧセߒߡ㧞ᩴએ਄ዋߥ޿ߩ߆ߤ ߁߆ࠍᬌ⸽ߔࠆߎߣߪߢ߈ߥ߆ߞߚޕߒ߆ߒޔ᣿ࠄ߆ ߦၮ᧼ߣߩ⇇㕙ߦ߅޿ߡޔ⓸⚛Ớᐲ߇ᄌൻߒߡ޿ࠆߎ ߣ߆ࠄޔၮ᧼ࠃࠅߪዋߥ޿⓸⚛Ớᐲߢ޽ࠆߎߣߪ⏕ታ ߢ޽ࠆߣᕁࠊࠇࠆޕ

Hallലᨐ᷹ቯߦࠃࠆಽᨆߩᬌ⸛

⤑ߩ‛ᕈࠍ৻⇟ᢅᗵߦ⴫⃻ߔࠆߩߪ㔚᳇⊛᷹ቯߢ޽ࠆޕ

੹࿁ޔࡎ࡯࡞ലᨐ᷹ቯⵝ⟎ࠍ૶↪ߒߡ᷹ቯߒߚ⚿ᨐޔ

ࠠࡖ࡝ࠕߩ⒖േᐲߦ㑐ߒߡ࿑6Cߦ␜ߒߚࠃ߁ߦޔૐ

᷷㗔ၞ߆ࠄ㜞᷷㗔ၞߦᷰࠆ߹ߢޔ↥✚⎇ߢ૞⵾ߒߚ⹜

ᢱࠃࠅ߽㜞⒖േᐲߩ⤑߇ᓧࠄࠇߡ޿ࠆߎߣ߇ಽ߆ߞߚޕ ᓧࠄࠇߚ⒖േᐲߩ୯߇ᧄᒰߛߣߔࠆߣ㕖Ᏹߦ㜞ຠ⾰ߥ

⤑߇ᓧࠄࠇߡ޿ࠆน⢻ᕈ߇޽ࠆޕߚߛޔ੹࿁ೋ߼ߡࡎ࡯

࡞ലᨐ᷹ቯⵝ⟎ࠍ㚟૶ߒߡ᷹ቯߒߚ߇ޔ߹ߛޔ૶޿ߎ ߥߖߡ߅ࠄߕޔ㔚Ḯ╬ߩ᡿㓚߽޽ߞߡ੹ᓟᬌ⸛ߔߴ߈

⭯⤑

ၮ᧼

৻ᰴࠗࠝࡦ

ᳪᨴ ⭯⤑ ၮ᧼

ᷓߐ

ࠗࠝࡦᒝᐲ

⓸⚛ߥߤߩ⴫㕙ᳪᨴ ⓸⚛

࿑9. SIMSಽᨆߩේℂߣ੍ᗐߐࠇߚ⓸⚛ਇ⚐‛ಽᏓ.

ၮ᧼

৻ᰴࠗࠝࡦ

⓸⚛ߥߤߩ⴫㕙ᳪᨴ

⭯⤑ ၮ᧼

ᷓߐ

ࠗࠝࡦᒝᐲ

⓸⚛

⭯⤑

10Ǵm 1Ǵm

࿑10. ታ㓙ߦ᷹ቯߐࠇߚ⓸⚛ߩSIMSಽᨆࠬࡍࠢ࠻࡞.

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⺖㗴ߪᄙ޿ޕ

࡜ࡑࡦಽశ᷹ቯߦࠃࠆಽᨆߩᬌ⸛

࠳ࠗࡗࡕࡦ࠼⤑ߩ⚿᥏ᕈࠍ⹏ଔߔࠆᚻᴺߣߒߡࠃߊ೑

↪ߐࠇࠆߩߪ࡜ࡑࡦᢔੂಽశᴺߢ޽ࠆޕ

࿑㧠ߦ␜ߔ࡜ࡑࡦᢔੂࠬࡍࠢ࠻࡞ߦ߅޿ߡ࠳ࠗࡗࡕ ࡦ࠼ߦ․᦭ߥ 1333/cm ߦ߅ߌࠆࠪࡖ࡯ࡊߥࡇ࡯ࠢ߇

᷹ⷰߐࠇߡ޿ࠆޕIbၮ᧼ߩࠬࡍࠢ࠻࡞ࡇ࡯ࠢࠃࠅ߽ඨ ୯᏷߇⁜޿ޕߐࠄߦޔᤓᐕၸⓍߒߚ⤑ߦᲧセߒߡࡃ࠶

ࠢࠣ࡜ࡦ࠼߇ᩰᲑߦዊߐߊߥߞߡ޿ࠆޕߎࠇࠄߩߎߣ ߪ੹࿁ၸⓍߒߚ࠳ࠗࡗࡕࡦ࠼⤑߇㕖Ᏹߦ⚿᥏ᕈ߇ࠃ޿

ߎߣࠍ⴫ࠊߒߡ޿ࠆޕߎߩߎߣߪ೨▵ߩࡎ࡯࡞ലᨐ᷹

ቯߦࠃࠆࠠࡖ࡝ࠕ⒖േᐲ߇㜞޿ߎߣߣㅪേߔࠆߎߣߢ

޽ࠅޔ⤑⾰ߣߒߡਇ⚐‛߇ዋߥߊޔ⚿᥏ᕈ߇޿޿⤑ޔ හߜ,ࠠࡖ࡝ࠕߩᢔੂ߇ዊߐ޿⦟ᅢߥ⤑ߢ޽ࠆߎߣࠍ

␜ໂߒߡ޿ࠆޕ⃻࿷ߩ࡜ࡑࡦᢔੂಽశ᷹ቯⵝ⟎ߩᵄᢙ

ಽ⸃⢻߇10/cm⒟ᐲߒ߆ߥ޿ߩߢޔߐࠄߦޔ㜞ಽ⸃⢻

ߩ࡜ࡑࡦᢔੂಽశ᷹ቯེࠍ↪޿ࠇ߫ޔIbၮ᧼ߣᲧセߒ ߡ߽ߞߣඨ୯᏷߇⁜߹ࠅޔߐࠄߦ⚿᥏ᕈ߇ࠃ޿ߎߣߩ

⸽߇ᓧࠄࠇࠆ߆߽⍮ࠇߥ޿ޕ

߹ߣ߼

࠳ࠗࡗࡕࡦ࠼ඨዉ૕߇ᧂ᧪ߩඨዉ૕ߣߒߡᅤ૗ߦᦼᓙ ߐࠇߡ޿ࠆߩ߆ߣ޿߁ߎߣ߆ࠄޔ⃻࿷߹ߢߦస᦯ߐࠇ ߡ޿ߥ޿໧㗴ὐ╬ߦ⸒෸ߒߚޕߘࠇࠍస᦯ߔࠆߚ߼ߩ ᣇ╷ࠍㅀߴޔߘࠇࠍታ⃻ߔࠆߚ߼ߦߪߤߩࠃ߁ߥࡊࡠ

࠮ࠬߢㅴ߼߫޿޿߆߽␜ߒߚޕ⃻࿷߹ߢߦ␹ᄹᎹᄢቇ ߦ߅޿ߡޔ㜞⚐ᐲޔ㜞ຠ⾰ߩ࠳ࠗࡗࡕࡦ࠼⭯⤑⹜ᢱࠍ ᒻᚑߢ߈ࠆǴᵄࡊ࡜࠭ࡑCVDⵝ⟎ࠍ㐿⊒ߒߚߎߣޔ ߐࠄߦޔߘࠇࠍ૶↪ߒߡ߆ߥࠅ㜞ຠ⾰ߥ࠳ࠗࡗࡕࡦ࠼

⭯⤑ࠍᒻᚑߢ߈ᆎ߼ߚߎߣࠍ⚫੺ߒߚޕ߹ߚޔࠞ࡯ࡏ ࡦ࠽ࡁ࠴ࡘ࡯ࡉߣ޿߁⃻࿷ᭂ߼ߡᵈ⋡ߐࠇߡ޿ࠆ‛⾰

߽ᚑ㐳ߐߖࠆߎߣߩߢ߈ࠆน⢻ᕈ߽␜ߔߎߣ߇ߢ߈ߚޕ ߎࠇࠄߩ⤑ߩຠ⾰ࠍ⹏ଔߔࠆߚ߼ߦߪฦ⒳᷹ቯⵝ⟎߇ ᔅⷐߢ޽ࠆ߇ޔ⃻࿷߹ߢߦޔ࡜ࡑࡦಽశ᷹ቯⵝ⟎ޔAFM ⵝ⟎ޔ⑳ቇഥᚑߦࠃࠅࡎ࡯࡞ലᨐ᷹ቯⵝ⟎߇ዉ౉ߐࠇޔ

⹜ᢱᒻᚑ߆ࠄ⹏ଔߦ⥋ࠆ৻⽾ߒߚࡊࡠ࠮ࠬࠍᄢቇౝㇱ ߢ㐽ߓߚᒻߢታ⃻ߢ߈ࠆࠃ߁ߦߥߞߚޕߐࠄߦޔ੹ᐕ ᐲ⑳ቇഥᚑߢዉ౉ߔࠆߎߣߦߥߞߡ޿ࠆਛ㔚ᵹࠗࠝࡦ ᵈ౉ⵝ⟎ࠍ೑↪ߔࠆߎߣߦࠃࠅޔ࠳ࠗࡗࡕࡦ࠼ඨዉ૕

ߩߺߥࠄߕޔࠪ࡝ࠦࡦඨዉ૕߿ฦ⒳ൻว‛ඨዉ૕╬ߦ ਇ⚐‛ࠍ࠼࡯ࡇࡦࠣߒߚࠅޔ‛⾰ߩ⚵ᚑࠍ㕖ᾲᐔⴧㆊ

⒟ߦࠃࠅᡷ⾰ߔࠆߎߣ߇ߢ߈ࠆࠃ߁ߦߥࠅޔඨዉ૕ߩ ߺߥࠄߕޔ࿕૕‛ᕈߩ޽ࠄࠁࠆ㗔ၞߦ߅޿ߡ⎇ⓥߩ᏷

߇ᐢ߇ࠆߎߣ߇ᦼᓙߢ߈ࠆޕ

⻢ㄉ

ߎߩ⎇ⓥࠍㆀⴕߔࠆߦ޽ߚࠅޔᖱႎ⑼ቇ⑼ߩᄙߊߩవ

↢ᣇ߆ࠄޔ޿ࠈ޿ࠈ⽷᡽⊛េഥࠍ㗂߈ᷓߊᗵ⻢޿ߚߒ

߹ߔޕ߹ߚޔ↥ᬺᛛⴚ✚ว⎇ⓥᚲ ࠳ࠗࡗࡕࡦ࠼࠮ࡦ

࠲࡯ᄢਠ⑲਎᳁ߦߪ޿ࠈ޿ࠈ⸛⺰ߒߡ޿ߚߛ߈ޔᷓߊ ᗵ⻢޿ߚߒ߹ߔޕ

ᢥ₂

1) Nakata J and Kajiyama K (1982) Novel low- temperature recrystallization of amorphous silicon by high-energy ion beam. Appl.Phys. Lett.40: 686.

2) Nakata J and Kajiyama K (1982) Novel low tem- perature (<300°C) annealing of amorphous Si by scanned high energy (~2.5 MeV) heavy ion beam.

Jpn. J. Appl. Phys.21:211.

3) Priolo F and Rimini E (1990) Ion-beam-induced epitaxial crystallization and amorphization in silicon.

Materials Science Reports5:319.

4) Linnros J, Svensson B and Holmen G (1984) Ion-beam induced epitaxial regrowth of amorphous layers in silicon on sapphire. Phys. Rev.B30: 3629.

5) Linnros J, Holmen G and Svensson B (1985) Propor- tionality between ion-beam induced epitaxial re- growth in silicon and nuclear energy deposition. Phys.

Rev.B32: 2770.

6) Williams JS, Elliman RG, Brown WL and Seidel TE (1985) beam induced crystallization of amorphous silicon.Mat. Res. Soc. Symp. Proc.37: 127.

7) Svensson B, Linnros J and Holmen G (1983) ion- beam induced annealing of radiation damage in silicon on sapphire. Nucl. Instrum & Methods209/210: 755- 760.

8) Linnros J, Holmen G and Svensson B (1984) Influ- ence of energy transfer in buclear colisions on the ion beam annealing of amorphous layers in silicon.

Appl. Phys. Lett.45(10):1116-1118.

9) Elliman RG, Johnson ST, Pogany AP and Williams JS (1985) iob beam induced epitaxial crystallization of silicon. Nucl. Instrum & MethodsB7/8:310-315.

10) Williams JS, Brown WL, Elliman RG, Knoell RV, Mahr DM and Seidel TD (1985) The kinetics and microstructure of ion beam induced crystallization of silicon.Mat. Res. Soc. Symp. Proc:37, 79.

11) Linnros J, Elliman RG and Brown WL (1987) The composition between ion beam induced epitaxial crystallization and amorphization in silicon; the role of the divacancy. Mat. Res. Soc. Symp. Proc.74: 477.

12) Heera V (1996) Comment on 'Evidence of enhanced epitaxial crystallization at low temperature by inelastic electronic of mega-electron-volt heavy-ion-beam irradia tion.J. Appl. Phys.80: 4235-4236.

13) Kinomura A, Williams JS and Fujii K (1999) Mass effects on regrowth rates and activation energies of solid-phase epitaxy induced by ion beams in silicon.

Phys. Rev.B59: 15214-15224.

14) Williams JS, Elliman RG, Brown WL and Seidel TE (1985) Dominant Influence of beam-induced interface rearangement on solid-phase epitaxial crystallization of Silicon.Rev. Lett.55: 1482-485.

15) Priolo F and Rimini E (1990) Ion-beam induced epitaxial regrowth of amorphous layers in silicon on

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sapphire.Mater. Sci. Rep.5:319.

16) Linnros J, Svensson B and Holmen G (1984) Propor- tionality between ion-beam induced epitaxial re- growth in silicon and nuclear energy deposition. Phys.

Rev.B30: 3629.

17) Elliman RG, Williams JS, Brown WL, Leiberich A, Maher DM and Knoell RV (1983) ion-beam induced annealing of radiation damage in silicon on sapphire.

Nucl. Instrum & Methods19/20: 755-760.

18) Linnros J, Holmen G and Svensson B (1984) In- fluence of energy transfer in buclear colisions on the ion beam annealing of amorphous layers in silicon.

Appl. Phys. Lett.45(10): 1116-1118.

19) Jackson KA (1988) A defect model for ion-induced crystallization and amorphization. Mater. Res.3(6):

1218.

20) Heera V, Henkel T, Kgler R and Skorupa W (1995) Evidence for diffusion-limited kinetics of ion-beam- induced epitaxial crystallization in silicon. Phys. Rev. B52:15776.

21) Nakata J (1991) Mechanism of low-temperature

crystallization and amorhization of amorphous Si layer on the crystalline Si by high-energy heavy-ion beam irradiation. Phys. Rev.B43: 14643.

22) Nakata J (1996) Evidence of enhanced epitaxial crystallization at low temperature by inelastic electronic scattering of mega-electron-volt heavy-ion- beam irradiation. J. Appl. Phys.79: No.2, 682.

23) Nakata J (1997) Enhanced crystallization of amor- phous Si containing hydrogen without oxygen during ion-beam irradiation at 310°C and during furnace annealing below 450°C. J. Appl Phys.82(11): 5433.

24) Nakata J (1999) Annealing of ion-implanted defects in diamond by MeV ion-beam irradiation. Phys. Rev.

B60: 2747.

25) Prins JF (2000) N-type semiconducting diamond by means of oxygen-ion implantation. Phys. Rev. B61: 7191.

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