Module
NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
The NXH200T120H3Q2F2SG is a power module containing a split T−type neutral point clamped three−level inverter. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. NXH200T120H3Q2F2STG is Pre−applied Thermal Interface Material (TIM) module.
Features
• Split T−type Neutral Point Clamped Three−level Inverter Module
• 1200 V Ultra Field Stop IGBTs & 650 V FS4 IGBTs
• 650 V SiC Diodes
• Low Inductive Layout
• Solderable Pins
• Thermistor
• Pre−applied Thermal Interface Material (TIM)
Typical Applications• Solar Inverters
• Uninterruptible Power Supplies
Figure 1. NXH200T120H3Q2F2SG Schematic Diagram
www.onsemi.com
See detailed ordering and shipping information on page 6 of this data sheet.
ORDERING INFORMATION MARKING DIAGRAM PIM56, 93x47 (SOLDER PIN)
CASE 180AK
PIN CONNECTIONS NXH200T120H3Q2F2SG,
NXH200T120H3Q2F2STG= Device Code
YYWW = Year and Work Week
Code
A = Assembly Site Code
T = Test Side Code
G = Pb−Free Package
NXH200T120H3Q2F2Sxx ATYYWW
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) TJ = 25°C unless otherwise noted
Rating Symbol Value Unit
HALF BRIDGE IGBT
Collector−Emitter Voltage VCES 1200 V
Gate−Emitter Voltage VGE ±20 V
Continuous Collector Current @ TC = 25_C IC 330 A
Continuous Collector Current @ TC = 80_C ( TJ = 175_C) 256
Pulsed Collector Current (TJ = 175_C) ICpulse 768 A
Maximum Power Dissipation @ TC = 80_C (TJ = 175_C) Ptot 679 W
Minimum Operating Junction Temperature TJMIN −40 _C
Maximum Operating Junction Temperature TJMAX 175 _C
NEUTRAL POINT IGBT
Collector−Emitter Voltage VCES 650 V
Gate−Emitter Voltage VGE ±20 V
Continuous Collector Current @ TC = 80_C (TJ = 175_C) IC 128 A
Pulsed Collector Current (TJ = 175_C) ICpulse 384 A
Maximum Power Dissipation @ TC = 80_C (TJ = 175_C) Ptot 264 W
Minimum Operating Junction Temperature TJMIN −40 _C
Maximum Operating Junction Temperature TJMAX 175 _C
HALF BRIDGE FREEWHEEL DIODE
Peak Repetitive Reverse Voltage VRRM 1200 V
Continuous Forward Current @ TC = 80_C (TJ = 175_C) IF 94 A
Repetitive Peak Forward Current (TJ = 175_C, tp limited by TJmax) IFRM 282 A
Maximum Power Dissipation @ TC = 80_C (TJ = 175_C) Ptot 232 W
Minimum Operating Junction Temperature TJMIN −40 _C
Maximum Operating Junction Temperature TJMAX 175 _C
HALF BRIDGE INVERSE DIODE
Peak Repetitive Reverse Voltage VRRM 1200 V
Continuous Forward Current @ TC = 80_C (TJ = 175_C) IF 18 A
Repetitive Peak Forward Current (TJ = 175_C, tp limited by TJmax) IFRM 54 A
Maximum Power Dissipation @ TC = 80_C (TJ = 175_C) Ptot 62 W
Minimum Operating Junction Temperature TJMIN −40 _C
Maximum Operating Junction Temperature TJMAX 175 _C
NEUTRAL POINT FREEWHEEL DIODE
Peak Repetitive Reverse Voltage VRRM 650 V
Continuous Forward Current @ TC = 80_C (TJ = 175_C) IF 75 A
Repetitive Peak Forward Current (TJ = 175_C, tp limited by TJmax) IFRM 225 A
Maximum Power Dissipation @ TC = 80_C (TJ = 175_C) Ptot 216 W
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) TJ = 25°C unless otherwise noted
Rating Symbol Value Unit
NEUTRAL POINT INVERSE DIODE
Peak Repetitive Reverse Voltage VRRM 650 V
Continuous Forward Current @ TC = 80_C (TJ = 175_C) IF 36 A
Repetitive Peak Forward Current (TJ = 175_C, tp limited by TJmax) IFRM 108 A
Maximum Power Dissipation @ Tc = 80_C (TJ = 175_C) Ptot 90 W
Minimum Operating Junction Temperature TJMIN −40 _C
Maximum Operating Junction Temperature TJMAX 175 _C
THERMAL PROPERTIES
Storage Temperature range Tstg −40 to 125 _C
INSULATION PROPERTIES
Isolation test voltage, t = 2 sec, 50 Hz Vis 4000 VRMS
Creepage distance 12.7 mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating Symbol Min Max Unit
Module Operating Junction Temperature TJ −40 (TJmax −25) _C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Parameter Test Conditions Symbol Min Typ Max Unit
HALF BRIDGE IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current VGE = 0 V, VCE = 1200 V ICES – – 500 A
Collector−Emitter Saturation Voltage VGE = 15 V, IC = 200 A, TJ = 25_C VCE(sat) 1.40 1.86 2.30 V VGE = 15 V, IC = 200 A, TJ = 175_C – 2.00 –
Gate−Emitter Threshold Voltage VGE = VCE, IC = 6 mA VGE(TH) 4.80 5.52 6.50 V
Gate Leakage Current VGE = 20 V, VCE = 0 V IGES – − 500 nA
Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES 1200 1400 1450 V
Turn−on Delay Time TJ = 25_C
VCE = 350 V, IC = 170 A VGE = −5/+15 V, RG = 10
td(on) – 302 – ns
Rise Time tr – 102 –
Turn−off Delay Time td(off) – 923 –
Fall Time tf – 59 –
Turn−on Switching Loss per Pulse Eon – 5.1 – mJ
Turn−off Switching Loss per Pulse Eoff – 5.4 –
Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Parameter Test Conditions Symbol Min Typ Max Unit
HALF BRIDGE IGBT CHARACTERISTICS Turn−on Delay Time TJ = 125_C
VCE = 350 V, IC = 170 A VGE = −5/+15 V, RG = 10
td(on) – 276 – ns
Rise Time tr – 97 –
Turn−off Delay Time td(off) – 997 –
Fall Time tf – 99 –
Turn−on Switching Loss per Pulse Eon – 5.4 – mJ
Turn−off Switching Loss per Pulse Eoff – 7.9 –
Input Capacitance VCE = 25 V. VGE = 0 V
f = 100 kHz Cies – 35615 – pF
Output Capacitance Coes – 700 –
Reverse Transfer Capacitance Cres – 530 –
Total Gate Charge VCE = 600 V, IC = 200 A, VGE = 15 V Qg – 1706.4 – nC
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness < 100 m,
= 2.87 W/mK RthJH – 0.24 – °C/W
Thermal Resistance − chip−to−case RthJC – 0.13 – °C/W
NEUTRAL POINT FREEWHEEL DIODE CHARACTERISTICS
Diode Reverse Leakage Current VR = 650 V IR – – 100 A
Diode Forward Voltage IF = 100 A, TJ = 25_C VF 1.2 1.48 2.7 V
IF = 100 A, TJ = 175_C – 1.90 –
Reverse Recovery Time TJ = 25_C
VCE = 350 V, IC = 170 A VGE = −5/+15 V, RG = 10
trr – 26.6 – ns
Reverse Recovery Charge Qrr – 308 – nC
Peak Reverse Recovery Current IRRM – 16.8 – A
Peak Rate of Fall of Recovery Current di/dt – 1659 – A/s
Reverse Recovery Energy Err – 34.5 – J
Reverse Recovery Time TJ = 125_C
VCE = 350 V, IC = 170 A VGE = −5/+15V, RG = 10
trr – 25.8 – ns
Reverse Recovery Charge Qrr – 294 – nC
Peak Reverse Recovery Current IRRM – 18.0 – A
Peak Rate of Fall of Recovery Current di/dt – 1672 – A/s
Reverse Recovery Energy Err – 35.2 – J
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness < 100 m,
= 2.87 W/mK RthJH – 0.54 – °C/W
Thermal Resistance − chip−to−case RthJC – 0.43 – °C/W
NEUTRAL POINT IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current VGE = 0 V, VCE = 650 V ICES – – 300 A
Collector−Emitter Saturation Voltage VGE = 15 V, IC = 150 A, TJ = 25_C VCE(sat) 0.8 1.36 2.05 V VGE = 15 V, IC = 150 A, TJ = 175_C – 1.50 –
Gate−Emitter Threshold Voltage VGE = VCE, IC = 1.2 mA VGE(TH) 3.5 4.03 6.4 V
Gate Leakage Current VGE = 20 V, VCE = 0 V IGES – − 300 nA
Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES 650 − − V
Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Parameter Test Conditions Symbol Min Typ Max Unit
NEUTRAL POINT IGBT CHARACTERISTICS Turn−on Delay Time TJ = 25_C
VCE = 350 V, IC = 170 A VGE = −5/+15 V, RG = 10
td(on) – 94 – ns
Rise Time tr – 45 –
Turn−off Delay Time td(off) – 224 –
Fall Time tf – 22 –
Turn−on Switching Loss per Pulse Eon – 3.1 – mJ
Turn off Switching Loss per Pulse Eoff – 2.4 –
Turn−on Delay Time TJ = 125_C
VCE = 350 V, IC = 170 A VGE = −5/+15 V, RG = 10
td(on) – 92 – ns
Rise Time tr – 51 –
Turn−off Delay Time td(off) – 244 –
Fall Time tf – 19 –
Turn−on Switching Loss per Pulse Eon – 4.7 – mJ
Turn off Switching Loss per Pulse Eoff – 3.0 –
Input Capacitance VCE = 25 V, VGE = 0 V, f = 100 kHz Cies – 9316 – pF
Output Capacitance Coes – 249 –
Reverse Transfer Capacitance Cres – 34 –
Total Gate Charge VCE = 480 V, IC = 80 A, VGE = 15 V Qg – 300.9 – nC
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness < 100 m,
= 2.87 W/mK RthJH – 0.50 – °C/W
Thermal Resistance − chip−to−case RthJC – 0.36 – °C/W
HALF BRIDGE FREEWHEEL DIODE CHARACTERISTICS
Diode Reverse Leakage Current VR = 1200 V IR – – 100 A
Diode Forward Voltage IF =150 A, TJ = 25_C VF 1.6 2.71 3.6 V
IF = 150 A, TJ = 175_C – 2.00 –
Reverse Recovery Time TJ = 25_C
VCE = 350 V, IC = 170 A VGE = −5/+15 V, RG = 10
trr – 62 – ns
Reverse Recovery Charge Qrr – 4700 – nC
Peak Reverse Recovery Current IRRM – 144 – A
Peak Rate of Fall of Recovery Current di/dt – 4017 – A/s
Reverse Recovery Energy Err – 849 – J
Reverse Recovery Time TJ = 125_C
VCE = 350 V, IC = 170 A VGE = −5/+15 V, RG = 10
trr – 107 – ns
Reverse Recovery Charge Qrr – 12510 – nC
Peak Reverse Recovery Current IRRM – 216 – A
Peak Rate of Fall of Recovery Current di/dt – 3815 – A/s
Reverse Recovery Energy Err – 2647 – J
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness < 100 m,
= 2.87 W/mK RthJH – 0.54 – °C/W
Thermal Resistance − chip−to−case RthJC – 0.40 – °C/W
Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Parameter Test Conditions Symbol Min Typ Max Unit
HALF BRIDGE INVERSE DIODE CHARACTERISTICS
Diode Forward Voltage IF = 7 A, TJ = 25_C VF 1.05 1.93 2.80 V
IF = 7 A, TJ = 175_C − 1.29 −
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness < 100 m,
= 2.87 W/mK RthJH – 1.71 – °C/W
Thermal Resistance − chip−to−case RthJC – 1.52 – °C/W
NEUTRAL POINT INVERSE DIODE CHARACTERISTICS
Diode Forward Voltage IF = 30 A, TJ = 25_C VF 1.3 2.35 3.2 V
IF = 30 A, TJ = 175_C − 1.50 −
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness 100 m,
= 2.87 W/mK RthJH – 1.21 – °C/W
Thermal Resistance − chip−to−case RthJC – 1.02 – °C/W
THERMISTOR CHARACTERISTICS
Nominal resistance R25 − 22 − kQ
Nominal resistance T = 100_C R100 − 1486 − Q
Deviation of R25 R/R −5 − 5 %
Power dissipation PD − 200 − mW
Power dissipation constant − 2 − mW/K
B−value B(25/50), tolerance ±3% − 3950 − K
B−value B(25/100), tolerance ±3% − 3998 − K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device Marking Package Shipping
NXH200T120H3Q2F2SG NXH200T120H3Q2F2SG Q2PACK − Case 180AK (Pb−Free and Halide−Free)
12 Units / Blister Tray
NXH200T120H3Q2F2STG NXH200T120H3Q2F2STG Q2PACK − Case 180AK (Pb−Free and Halide−Free)
12 Units / Blister Tray
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
Figure 2. Typical Output Characteristics Figure 3. Typical Output Characteristics
Figure 4. Typical Transfer Characteristics Figure 5. Typical Diode Forward Characteristics
Figure 6. Typical Turn ON Loss vs. IC Figure 7. Typical Turn OFF Loss vs. IC
0 50 100 150 200 250 300 350
0.0 0.5 1.0 1.5 2.0 2.5
Ic, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 25°C
VGE = 20 V
VGE = 11 V
0 50 100 150 200 250 300 350
0.0 0.5 1.0 1.5 2.0 2.5
Ic, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 175°C
VGE = 20 V
VGE = 11 V
0 50 100 150 200 250 300 350
0 2 4 6 8 10 12
Ic, COLLECTOR CURRENT (A)
VGE, GATE−EMITTER VOLTAGE (V) TJ = 175°C
TJ = 25°C
0 20 40 60 80 100 120 140 160 180 200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
IF, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (V) TJ = 25°C
TJ = 175°C
0 2 4 6 8 10 12
0 50 100 150 200 250 300 350
EON, TURN ON LOSS (mJ)
IC(A)
0 2 4 6 8 10 12 14 16
0 50 100 150 200 250 300 350
EOFF, TURN OFF LOSS (mJ)
IC(A) VGE = +15 V, −5 V
VCE = 350 V RG = 10
25°C 125°C
VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
0 50 100 150 200 250 300 350
VGE =+15V,−5V VCE = 350V Rg=10W
0 10 20 30 40 50
0 50 100 150 200 250 300 350
t rr
, REVERSE RECOVERY TIME (ns)
0 50 100 150 200 250 300 350
0 50 100 150 200 250 300 350
TIME (ns)
T d(on)
tr
IC, COLLECTOR CURRENT (A) V GE = + 15V ,−5 V
V CE = 35 0 V R G=10 W VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C 0
200 400 600 800 1000 1200
0 50 100 150 200 250 300 350
TIME (ns)
T d(off)
tf VGE= +15V,−5V VCE= 35 0V RG=10W
Figure 8. Typical Turn−Off SwitchingTime vs. IC Figure 9. Typical Turn−On Switching Time vs. IC
Figure 10. Typical Reverse Recovery Time vs. IC Figure 11. Typical Reverse Recovery Charge vs. IC
Figure 12. Typical Reverse Recovery Peak Current vs. IC Figure 13. Typical Diode Current Slope vs. IC
0 0.05
0.1 0.15 0.2 0.25 0.3 0.35 0.4
4 6 8 10 12 14 16 18 20 22
0 50 100 150 200 250 300 350
I rrm
, REVERSE RECOVERY CURRENT (A)
0 400 800 1200 1600 2000
0 50 100 150 200 250 300 350
VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Qrr, REVERSE RECOVERY CHARGE (C)
VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C VGE = +15 V, −5 V
VCE = 350 V RG = 10
25°C 125°C
Qrr, REVERSE RECOVERY CHARGE (C)di/dt, DIODE CURRENT SLOPE (A/s)
VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
Figure 14. Typical Reverse Recovery Energy vs. IC Figure 15. Typical Reverse Recovery Energy Loss vs. RG
Figure 16. Typical Turn ON Loss vs. RG Figure 17. Typical Turn OFF vs. RG
0 5 10 15 20 25 30 35 40
0 50 100 150 200 250 300 350
0 5 10 15 20 25 30 35 40
10 15 20 25 30 35
Err, REVERSE RECOVERY ENERGY
0 4 8 12 16 20
5 10 15 20 25 30 35 0
3 6 9 12 15
5 10 15 20 25 30 35
EOFF, TURN OFF LOSS (mJ)
0 100 200 300 400 500 600 700 800 900
5 10 15 20 25 30 35
TIME (ns)
T d(on)
tr
0 500 1000 1500 2000 2500 3000
5 10 15 20 25 30 35
TIME (ns)
T d(off)
tf VGE = +15 V, −5 V
VCE = 350 V RG = 10
25°C 125°C
VGE = +15 V, −5 V VCE = 350 V RG = 170
25°C 125°C
VGE = +15 V, −5 V VCE = 350 V IC = 170 A
25°C 125°C
25°C 125°C VGE = +15 V, −5 V VCE = 350 V IC = 170 A
VGE = +15 V, −5 V VCE = 350 V IC = 170 A
25°C 125°C
25°C 125°C VGE = +15 V, −5 V VCE = 350 V IC = 170 A EON, TURN ON LOSS (mJ)Err, REVERSE RECOVERY ENERGY
IC (A) RG ()
RG () RG ()
RG, GATE RESISTOR () RG, GATE RESISTOR ()
J)
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
Figure 20. Typical Reverse Recovery Energy vs. IC Figure 21. Typical Reverse Recovery Energy Loss vs. RG
Figure 22. Typical Turn ON Loss vs. RG Figure 23. Typical Turn OFF vs. RG
10 15 20 25 30 35 40 45 50
5 10 15 20 25 30 35 0
50 100 150 200 250 300 350
5 10 15 20 25 30 35
5 7 9 11 13 15 17 19
5 10 15 20 25 30 35
500 700 900 1100 1300 1500 1700 1900
5 10 15 20 25 30 35
0 3 6 9 12 15
0 150 300 450 600 750 900 1050 1200 1350 1500 1650 1800 1950
Vge (V)
Charge (nC) VGE = +15 V, −5 V
VCE = 350 V IC = 170 A
25°C 125°C
VGE = +15 V, −5 V VCE = 350 V IC = 170 A
25°C 125°C
25°C 125°C VGE = +15 V, −5 V VCE = 350 V IC = 170 A
VGE = +15 V, −5 V VCE = 350 V IC = 170 A
trr, REVERSE RECOVERY TIME (ns) Qrr, REVERSE RECOVERY CHARGE (C)
RG, GATE RESISTOR () RG, GATE RESISTOR ()
Irrm, REVERSE RECOVERY CURRENT
RG, GATE RESISTOR () RG, GATE RESISTOR ()
di/dt, DIODE CURRENT SLOPE (A/s)
VCE = 600 V IC = 200 A
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
Figure 25. IGBT Transient Thermal Impedance
Figure 26. Diode Transient Thermal Impedance
0.001 0.01 0.1 1 10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Duty cycle peak response [°C/W]
Pulse on time [s]
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.001 0.01 0.1 1 10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Duty cycle peak response [°C/W]
Pulse on time [s]
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
Figure 27. HB IGBT RBSOA Figure 28. HB IGBT FBSOA
0 50 100 150 200 250 300 350 400 450 500
0 200 400 600 800 1000 1200 1400
Ic Chip
0.1 1 10 100 1000
1.000 10.000 100.000 1000.000 10000.000
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)
VGE =+15 V −5 V, TJ = TJmax−25°C
Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature
dc operation
1 ms 100 ms 50 ms
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
Figure 29. Typical Output Characteristics Figure 30. Typical Output Characteristics
0 50 100 150 200 250
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Ic, COLLECTOR CURRENT (A)
0 50 100 150 200 250
0.0 0.5 1.0 1.5 2.0 2.5
Ic, COLLECTOR CURRENT (A)
0 50 100 150 200 250
0 1 2 3 4 5 6 7 8
Ic, COLLECTOR CURRENT (A)
TJ = 175°C
TJ = 25°C
0 20 40 60 80 100 120 140 160 180 200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
TJ = 175°C
TJ = 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A) TJ = 25°C
VGE = 20 V
VGE = 11 V
TJ = 175°C
VGE = 20 V
VGE = 11 V
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
Figure 33. Typical Turn ON Loss vs. IC Figure 34. Typical Turn OFF Loss vs. IC
Figure 35. Typical Turn ON Switching Time vs. IC Figure 36. Typical Turn OFF Switching Time vs. IC
0 1 2 3 4 5 6 7 8
0 50 100 150 200 250 300 350
0 1 2 3 4 5 6 7
0 50 100 150 200 250 300 350
0 20 40 60 80 100 120
0 50 100 150 200 250 300 350
TIME (ns)
T d(on)
tr
0 100 200 300 400
0 50 250 300 350
TIME (ns)
T d(off)
tf
0 20 40 60 80 100 120 140
0 50 100 150 200 250 300 350
0 2 4 6 8 10 12 14 16 18 20
0 50 100 150 200 250 300 350
VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C
100 150 200
EON, TURN ON LOSS (mJ)
IC (A) IC (A)
EOFF, TURN OFF LOSS (mJ)
VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C
trr, REVERSE RECOVERY TIME (ns)
VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C
VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C
Qrr, REVERSE RECOVERY CHARGE (C)
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
Figure 39. Typical Turn ON Loss vs. IC Figure 40. Typical Turn OFF Loss vs. IC
Figure 41. Typical Turn ON Switching Time vs. IC Figure 42. Typical Turn OFF Switching Time vs. IC
4 54 104 154 204 254 304 354
0 50 100 150 200 250 300 350
1000 1500 2000 2500 3000 3500 4000 4500 5000
0 50 100 150 200 250 300 350
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0 50 100 150 200 250 300 350
0 0.5 1 1.5 2 2.5 3
5 10 15 20 25 30 35
0 1 2 3 4 5 6 7 8 9 10
5 10 15 20 25 30 35
0 1 2 3 4 5 6
5 10 15 20 25 30 35
VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C Irrm, REVERSE RECOVERY CURRENT
IC, COLLECTOR CURRENT (A)
di/dt, DIODE CURRENT SLOPE (A/s)
VGE = +15 V, −5 V VCE = 350 V RG = 10
25°C 125°C
IC, COLLECTOR CURRENT (A)
IC (A) VGE = +15 V, −5 V
VCE = 350 V RG = 10
25°C 125°C
Err, REVERSE RECOVERY ENERGY (mJ) Err, REVERSE RECOVERY ENERGY (mJ)
RG ()
VGE = +15 V, −5 V VCE = 350 V IC = 170 A 25°C
125°C
VGE = +15 V, −5 V VCE = 350 V IC = 170 A
25°C 125°C
EON, TURN ON LOSS (mJ)
RG () RG ()
VGE = +15 V, −5 V VCE = 350 V IC = 170 A
25°C 125°C
EOFF, TURN OFF LOSS (mJ)
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
Figure 45. Typical Turn ON Switching Time vs. RG Figure 46. Typical Turn OFF Switching Time vs. RG
Figure 47. Typical Reverse Recovery Time vs. RG Figure 48. Typical Reverse Recovery Charge vs.
RG
0 50 100 150 200 250
5 10 15 20 25 30 35
TIME (ns)
T d(on)
tr
0 100 200 300 400 500 600
5 10 15 20 25 30 35
TIME (ns)
T d(off)
tf
15 35 55 75 95 115 135 155 175 195
5 10 15 20 25 30 35
0 2 4 6 8 10 12 14
5 10 15 20 25 30 35
5 55 105 155 205 255
5 10 15 20 25 30 35
500 1000 1500 2000 2500 3000 3500 4000 4500
5 10 15 20 25 30 35
VGE = +15 V, −5 V VCE = 350 V IC = 170 A 25°C
125°C 25°C
125°C
25°C 125°C VGE = +15 V, −5 V VCE = 350 V IC = 170 A
25°C 125°C VGE = +15 V, −5 V VCE = 350 V IC = 170 A
25°C 125°C VGE = +15 V, −5 V VCE = 350 V IC = 170 A
VGE = +15 V, −5 V VCE = 350 V IC = 170 A
trr, REVERSE RECOVERY TIME (ns) Qrr, REVERSE RECOVERY CHARGE (C)
Rg, GATE RESISTOR () Rg, GATE RESISTOR ()
Rg, GATE RESISTOR () Rg, GATE RESISTOR ()
Rg, GATE RESISTOR () Rg, GATE RESISTOR ()
Irrm, REVERSE RECOVERY CURRENT (A) di/dt, DIODE CURRENT SLOPE (A/s)
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
Figure 51. Gate Voltage vs. Gate Charge
Figure 52. IGBT Transient Thermal Impedance
0 3 6 9 12 15
0 25 50 75 100 125 150 175 200 225 250 275 300 325 350
Vge (V)
Charge (nC)
0.001 0.01 0.1 1 10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Duty cycle peak response [°C/W]
Pulse on time [s]
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
Figure 53. Diode Transient Thermal Impedance
0.001 0.01 0.1 1 10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Duty cycle peak response [°C/W]
Pulse on time [s]
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle VCE = 480 V
IC = 80 A
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
Figure 54. NP IGBT RBSOA Figure 55. NP IGBT FBSOA
0 100 200 300 400
0 200 400 600 800
Ic Chip
0.1 1 10 100 1000
1.000 10.000 100.000 1000.000 10000.000
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature
dc operation
1 ms 100 ms 50 ms
VGE = +15 V −5 V, TJ = TJmax−25°C
TYPICAL CHARACTERISTICS − HALF BRIDGE INVERSE DIODE
Figure 56. Diode Forward Characteristic
Figure 57. Diode Transient Thermal Impedance
0 20 40 60 80 100 120 140 160 180 200
0 1 2 3 4 5 6 7 8
0.001 0.01 0.1 1 10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Duty cycle peak response [5C/W]
Pulse on time [s]
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle TJ = 175°C
TJ = 25°C
IF, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (V)
TYPICAL CHARACTERISTICS − NEUTRAL POINT INVERSE DIODE
Figure 58. Diode Forward Characteristic
Figure 59. Diode Transient Thermal Impedance
0 20 40 60 80 100 120 140 160 180 200
0 1 2 3 4 5 6
TJ = 175°C
TJ = 25°C
0.001 0.01 0.1 1 10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Duty cycle peak response [°C/W]
Pulse on time [s]
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle IF, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (V)
TYPICAL CHARACTERISTICS – THERMISTOR
Figure 60. Thermistor Characteristics
PIM56, 93x47 (SOLDER PIN) CASE 180AK
ISSUE B
DATE 08 NOV 2017
XXXXX = Specific Device Code G = Pb−Free Package
AT = Assembly & Test Site Code YYWW= Year and Work Week Code
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking.
GENERIC MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG ATYYWW
98AON63482G
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