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Investigation on the Effect of Temperature Excursion on the Helium Defecis of Tungsten Surface by using Compact Plasma Device

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愛総研・研究報告 第12号 2010年

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CompactP

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Takamura

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Miyamoto

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Absiract The effects of temperature excursion on the helium defects of tungsten surfac巴havebeen investigated by using compact plasma device AIT-PID. An initial stage of bubble formations has been identified with an order of small巴r(sub-micron) bubbles and holes than those in the past in which the micron size is the standard magnitude. The radiation cooling has been detected when a blacking of tungsten surface coming from nanostructure formation is proceeding due to an increase in the emissivity up to almost1.0 in the final stage. The temperature increase to th巴domain(~1600K) in bubble/hole formation from that in nanostruc印re formation has been found to bring a constriction in diameter and a reduction in length offiber-form nanostructure. 1. Introduction Helium defects of旬ngstensurface hav巴beenconsidered to be serious for all-metal plasma-facing components including first wall and divertor target plat巴inbuming fusion plasma devices [1]. Helium bubbles and holes at high surface t巴mperature more than about 1600K [2] and arborescent nanos仕uctureat the temperature lower than about 1500K [3,4] ar巴thetypical morphology of damaged旬ngstensurface. However, a large t巴mporalchange in t巴mperature of 旬ngstensurface may be阻ticipatedin tokamak fusion reactor due to dynamic operation of tokamak discharge and various kind of relaxation phenomena including位anslent p巴riodic enormous heat local like ELM. Therefor・e,the investigation on the effect of temperature excursion on the h巴liumdefects of 旬ngstenbecomes very important in terms of arcing, erosion and tungsten release企omthe surface under burning condition 2. Experimental set-lI.p Fig.1 Experimental device -AIT-PID-. pairs of neodymium permanent magnet bars (the cross section : 15 mm x 15 mm) composing a multi-cusp(poloidal mode number: 6) magnetic configuration and a solenoidal winding undemeath the magnets producing a weak axial magnetic field up to 10 mT [5]. The intensity distributions of magnetic field perpendicular to the axis obtained by both the experiment using gauss meter and a numerical analysis are quite good in the The devic巴forthe present study is called AIT-PID (Aichi agreement between these two. We have magnetic司企巴ezone on Institute ofTechnology -PlasmaIrradiation Devic巴)has a the axis through which the produced plasma may path in the machine structure shown in Fig 1, which is equipped with three axial direction. The weak axial field may help the longitudinal

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愛 知 工 業 大 学 工 学 部 電 気 工 学 科 ( 豊 田 市 ) 名古屋大学工学研究科(名古屋市) 仕anspo抗 ofthe plasma目 Atthe end of this zon民 theLaB6 cylindrical cathode with the diameter of 20 mm is located, while the target for PWI is set at the mid position.An emission 25

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26 愛知工業大学総合技術研究所研究報告,第12号, 2010年 spec仕umhas been obtained through the viewing port at the mid, showing a pur巴Hep1asma without any serious contamination. At the moment we have succeeded in the discharge current of 25 A whi1e the p1asma density exceeds 1 x 1018m-3 with a bu1k electron temperature of 5 e V with a hot e1ectron component of 10% and the temperature of 40 e V.The ion立ux to the target is around 1 x 1022(m2s)"l. 3圃Experimentalresults and discl.issions The high density helium plasma has been obtained with a good radia1 confinement by using the multi-cusp magnetic fie1d associated with a weak axia1 fie1d. The helium ion irradiations on the powd巴rmetallurgy tungsten have been performed in this compact p1asma device AIT-PID. The旬ngstent紅getp1ate(l 0 x 10 m m2) was inserted into the central position of AIT-PID at the same axia1 10cations as the scanning probe, but at the po1oidally different port Fig.2 Bubb1es/holes formation. The ion flux: 6.5~ 8.6 x1021(m2s)一1.The ion bombarding energy is25~30 eV. (a) T~1650K, F1uenceFく 2.1x 1025m

(b)T~1700K, F = 4.6X 1025m

(c)T~1600K, F= 7.7 x 1025m-2 3.1 Initial stage

0

/

bubblelhole戸rmation The floating voltage (sh削 hvo1tage) ofthe target was found to be around 45 V which is fair1y high owing to the presence of hot e1ec仕on componen Tt. his determines the ion incident 巳nergyof 45 eV under the floating condition ofth巴targetplate. We can increase the surface temp巴ratureup to around 1700 K by biasing th巴targettowards the p1asma potential.The surface temperature is obtained by an infrared radiation thermometer (CHINO: IR-CAS) with the emissivity s= 0.43. The wave1ength ofin企aredray is 0.9μm with a Si d巴tector.In this case the ion incident energy to the似ngstensurface is decreased to25~ 30eV by the biasing potentia1 of around -20 V. The obtain巴d surface morpho1ogy is shown in Fig. 2 τime(min) Fig.3 Typica1 tempora1 change in 旬ngsten surface tempera旬refor both bubb1e/ho1e formations range at higher temperature and nanostructure one at 10wer tempera印re Th巴bubb1eand ho1es紅 巳created,however the size of them is not as 1arge as 1 micron as observed beforeラbutan ord巴rof magnitude smaller than those [2, 6~8]. It means and initia1 stag巴 ofthe deve10pment ofbubb1es and ho1es. 3.2 Temporal ch冊Igein surfiαce temperature The typica1 tempora1 behaviors of tungsten surface temp巴ratureare shown in Fig.3 for both bubb1e/hole formation case and nanostructure one. The common feature is the temperature decrease in time. But we have a dramatic decrement roughly 300 K when the nanostructure is formed on the surface, while a modest decrease is detected when the bubb1es/holes are produced there. Itshou1d be noted that the surface morphology is bifurcated at the surface temperature around 1600 K although ther巴isa small change in ion incident energy by around 10 eV. In these observations the emissivity for infrared radiation thermometer is fixed at s= 0.43. The b1acking in co1or for nanostructured tungsten sugges臼a1arge increase in emissivity probab1y approaching to the va1ue 1.0 [9, 10]. Itmeans that the tungsten surface becomes an idea1 b1ack宇body,which is a1so estimated企omthe observation of well-developed tungsten surface morpho1ogy with enough

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Investigation on the Eff巴,ctof Temperature Excursion on the Helium Defects of Tungsten Surface by using Compact P1asma Device 27 helium ion irradiation to have a saturations of surface t巴mpera郎 氏reduction,as shown in Fig.4. Fig.4 Surface morpho10gies of some typica1 well-d巴V巴10p巴d nanostructure on the旬ngstensurface. The top picture shows the surface, while the bottom one does an oblique observation of broken edge. On the other hand, the p1asma heat 10ad to the tungsten t紅getwou1d be maintained at the same 1eve1 since the sheath thickness around 100μm is much greater than the sca1e of nanos仕uctureく100nm.The temperature reduction is sca1ed as (0.43/1. 0)1刈 ~0.81 owing to the radiation power dependence Pr = eσ

T

so that 1530K x 0.81 = 1240K wou1d be anticipated. Figure 3 shows a li社1ebit 10wer temperature. But we note that this curve was obtained by fixing the emissivity of 0.43 so that a much more 10wer tempera知rewou1d be expected. According

to the high附frequencyapproximation ofP1anck's 1aw, we obtain the following equation:

2hc

2 C

-

-

;

1

'

λ

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T)

ニゴ-

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=Ae

16.0x103 T[K] whereλ= 0.9μm. The tempera旬rediffer閉 じ 巴measuredwith ε = 1.0 and 0.43 is given by ふ

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43 we obtainf'..T = -76K. 羽弓len T = 1200K , then In order to confrrm the reductions in t芯mperature,the another type of infrared radiation thermometer (CHINO: IR回CAQ2CS) with three combinations of wave1ength and detector: 1.55(InGaAs), 1.35(InGaAs) and 0.9μm(Si), when we assume e(1.55μm) / e(0.9μm) = 0.7 and e(1.55μm) / e(1.35μm) = 1.0.The sta抗ingtemperature of 1410K is decreased down to 1100K with temperature reduction of 31OK. So it is concluded that the nanostructure formation increases仕leradiation 10ss to bring some coo1ing of旬ngsten target under the same background p1asma conditions. We note that the floating potentia1 of th巴tungstentarget

tends to become negatively deep from -35 down to -43 in time corre1ated to the decrement of surface temperature. The p1asma potentia1 of about +5 V with respect to the vacuum chamber would not change much. The sheath voltage of about 40 V at floating condition is fair1y high considering the e1ectron temperature of around 4 eV since時~4Te ~16 V in helium p1asma. But the hot e1即 位oncomponent of 40 eV with the fraction of 10% wou1d exp1ain such a high floating voltage. Anyway, an observab1e change in floating potentia1 suggests some effect of nanostructure on sheath formation on the tungsten surface in spite of the above arguments concerning the sca1e comparison. 3.3 Effects ofincreased heα lt'oad on nanostuructured surfiαce After obtaining well-deve10ped nanostructured tungsten specimens with two-hours exposure to helium p1asma, the surface tempera旬reoftheseωngsten t紅getp1ate is increased to around 1600K by a司justingthe p1asma parameters and biasing the targets towards the p1asma potentia1 but still with the ion incid巴ntenergy 1arger than 15 eV and keeping the ion flux density of around 1 x 1022 (m2s)1 . The surface morphology of these specimens with additiona1 heat 10ad is found to be

(

1

khanged serious1y and v町 rapid1yin tim久dependingon the arrived surface tempera旬re Tsurfand the time period for additiona1 irradiation. The most important morpho10gical changes are an enhancement in thickness and a reduction in length of nanostructured tungsten fib巴rwith helium bubb1e inside [11] as

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2

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愛 知 工 業 大 学 総 合 技 術 研 究 所 研 究 報 告 , 第12号, 2010年

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1

.

5

min (T

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7

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urτ

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'

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Fig.5 Surface morphologies of several旬ngstensurfaces witlfadditional heat load on the well-developea nanostructured surfaces. Tsurfis the surface t巴mp巴ratureduring additional heat load and the time in minute is the time period for that

shown in Fig. 5. Such changes become large as the time p巴riod increas巴sand theTsurfbecomes high. This kind ofbehavior may be partly explained by helium leakage from the bubbles and th巴 swelled fibers are shrunk. During the temperature excursionラth巴visiblelight emission of tungsten atomic lin巴WI498.3nm has been carefully checked with spectrometer whether it could increase or not.An increase could show a possible tungsten release to surrounding helium plasma from the damaged surface. However, no increase has been detected In thes巴experimentalconditions we do not have any tungsten release even with some shrinkage of tungsten nano-日bers. 4. Summary and conclusions The following new findings have been obtained in this study for the helium defect on旬ngstensurface by using th巴 compact plasma device AIT -PID: 1) An initial stage of macroscopic bubble / hole formations with an order of smaller (sub-micron) bubbles and holes than that in the past 2) The radiation cooling due to a blacking oftungsten surface coming from nanos仕uc旬re forτnation in which the emissivity approaches up to almost1.0 in well-developed nanostructured surface. 3) A constriction in diameter and a reduction in length of fiber-form nanostructure tungsten textile by increasing the temperature to the domain of bubble / hole formation(~ 1600 K) from that ofnanostructured one. AcknowledgemenTs This research was supported by the Ministry of Education, Science, Sports and C叫旬re,Grant四in-Aid for Scientific Research (B), 20360414 from JSPS. The authors would like to thankH.Iwata of Electrical Engineering in A.I.T.for his help on FE-SEM manipulation. References [lJ A. Loart巴巴ta,.lNuc.lFusion 47 (2007) S203.

[2J M.Y.Ye, S. Takamura and N. Ohno, J. Nucl.Mater. 241幽243(1997) 1243.

[3J S. Takamura, N. Ohno, D目Nishijimaand S. K司jita,Plasma Fusion Res. 1 (2006) 051

[4J S. Kajita, S. Takamura and N. Ohno, Nucl.Fusion 49 (2009) 032002. [ 伊5J S.Takamura巴et aリ,.,l St飢ud必i巴s"ヲ"ララ accepted for publication inI.Plasma Fusion Res SERIES, [6J D. Nishijima, M.Y.Ye, N. Ohno and S. Takamura, Proc. 30th EPS Con王onContr. Fusion and Plasma Phys., St Petersburg, ECA VoL27A (2003) 2.163

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Investigation on the Effect of Temperature Excursion on the Helium Defects of Tungsten Surface by using Compact Plasma Device 29

Mater.313・316(2003) 97.

[8] D. Nishijima, M.Y.Ye, N. Ohno and S. Takamura" J. Nucl.

恥1ater.329岨333(2004) 1029.

[9] M.Y.Ye, S. FukutaヲN.Ohno, S. Takamura, K. Tokunaga

and N. Yoshida, 1.Plasma Fusion Res. SERIES 3 (2000) 265

[10] W. Sakaguchi, S. K司jita,N. Ohno and恥1.Takagi, J. Nucl. Mater.290-3型1(2009) 1149

[11] S. K句ita,S. Takamura, N. Ohno, D. Nishijima, H. Iwakiri and N. Yoshida, Nucl.Fusion 47 (2007) 1358.

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