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STACKED AND AMPLIFIED SOLID一 STATE IMAGE SENSOR

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STACKED AND AMPLIFIED SOLID一 STATE IMAGE SENSOR

Septernber,1990

Huang Zhong ShOu

A novel ilrlage sensor comprised Of a MOS transistor array overlttd with an a,Si:H photoconductive film are developedo A sensor structure suitable for high quality imager was found from four avanttle se五 lor structure,which cm■ be realized by changing the typё  of,一 Si:H filh and of MOS transistors.The optimum 91erttiOn cOndhions are also pres,■ t90 by analyzing the sensor op6rating model.Theory ex,ressiOns of signal current and gain, concernmg with the effects of resistancё  and stray capacitance ln the s■ gnal transfer lines,

田 e presented.It is verified that two different amplifying meChaniSms,  current― type"̀mo

capacitance― type", act si面 1ltaneously in this sensor,and the former usually is domⅢ 就 ed atlwer p破 01 density aroa,while the later wユ l become domintted■ higher piXel dlns■ y area.Ambient teln,erature dependence of Output current of the sensor was studiedl The suitable opera■ on conditions are given,by which th6 currettt shift with temper■

urё

 Can decrease by half up to about 75℃ .  The impOrtant characteristics of the fabricated sbnsor

are aき

:sensitivity,20  μ  A/Lx,gain, 400,linearity(  γ  value), 1,dynamic range, 85dB〜

100dB.Finally,a novel amplified solid st■ e phot9detoctor operating in a persist,nCe―

integration mode was proposed.It shows a sensitivity of 100 timesぉ high as a conven,iOnal amplified image sensor at low light level.Signal gah of this photodetector can be m64ified with incident light pOwer automatically, and this phot6detector can work throughOⅢ  2×

10‑6w/cm2̲2× 10 12w/cm2.

― ‑177‑―

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