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高耐圧パワー半導体素子を目指したp型SiC結晶のキャリア寿命に関する研究

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図 1.3:  Si および SiC の片側階段接合における電界分布
図 1.7:  紀伊水道直流送電に使用される ±250 kV サイリスタバルブの寸法[36]、および 外観写真,モジュール・素子[37]
図 1.8:  PiN ダイオードの耐圧維持層の高注入状態におけるキャリア分布の例
図 1.10:  4H-SiC PiN ダイオードにおける、所望の絶縁耐圧に必要な耐圧維持層厚さ
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