SEMICONDUCTOR GENERAL CATALOG
半導体製品総覧表
2017年7月版
Bipolar Transistors
Bipolar Small-Signal Transistors / バイポーラ小信号トランジスタ
Bipolar Power Transistors / バイポーラパワートランジスタ
IGBTs/ IEGTs / IGBT / IEGT
Multi-Chip Discrete Devices / 異品種混載複合デバイス
Radio-Frequency Bipolar Small-Signal Transistors / 高周波バイポーラ小信号トランジスタ
Bipolar Small-Signal Transistors /
バイポーラ小信号トランジスタ
General-Purpose Transistor /
汎用トランジスタ
(Single) /
(シングル品)
Classification
V
CEO(V)
Max
I
C(mA)
Max
(Surface-Mount Type)
CST3
VESM
SSM
USM
UFM
0.6 0.35 0.38 1.0 1.2 1.2 0.8 1.6 1.6 0.8 2.0 2.1 1.25 2.0 2.1 1.7
(mm)
(mm)
(mm)
(mm)
(mm)
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
General-purpose 50 1002SC6026 CT
2SA2154 CT
150
2SC6026 MFV
2SA2154 MFV
2SC4738 2SA1832 2SC4116 2SA1586
30500
2SA1588
45
50
Low noise 120 100
2SC4117 2SA1587
Low saturation voltage 15 800 High current 20 25002SA2215
25 800 50 10002SC6135
17002SA2195
25002SC6100
Muting 20 3002SC4213
High breakdown voltage 300 100 600 50・ For the PNP transistors, the minus sign (–) indicating a negative voltage is omitted.
S-MINI
SOT23
2.9 2.5 1.5 2.9 2.4 1.3(mm)
(mm)
NPN
PNP
NPN
PNP
2SC2712 2SA1162 TMBT3904
*
TMBT3906 *
TBC847
*
TBC857
*
2SA1182
TTA1713
**
TTC1949
**
2SC3325 2SA1313
2SC2713 2SA1163
2SC3324 2SA1312
2SA1362
2SC3265 2SA1298
2SC3326
2SA1721
2SC6105
*: New product / 新製品 **: Under development / 開発中General-Purpose Transistor /
汎用トランジスタ
(Dual) /
(デュアル品)
Classification
V
CEO(V)
Max
I
C(mA)
Max
Dual Type
ESV
USV
SMV
ES6
1.6 1.6 1.2 2.0 2.1 1.25 2.9 2.8 1.6 1.6 1.6 1.2
(mm)
(mm)
(mm)
(mm)
PNP + NPN
NPN
PNP
NPN
PNP
PNP + NPN
NPN
PNP
PNP + NPN
General-purpose 50 1502SA1873
HN4B01 JE
2SC4944 (
p1) 2SC4207 2SA1618
HN1C01
FE
HN1A01 FE
HN1B04 FE
(
p6)
(
p2) HN4A56 JU
(
p2)
(
p1)
(
p10)
(
p7)
(
p9)
(
p4)
50 500 Low noise 120 100HN4C06 J
HN4A06 J
(
p2)
(
p1) HN4B06 J
HN4C51 J
HN4A51 J
(
p3)
(
p5)
(
p4)
High current 15 800 25HN4A08 J
(
p1)
Muting 20 300・ For the PNP transistors, the minus sign (–) indicating a negative voltage is omitted.
・ The ratings enclosed in parentheses are for those devices whose part numbers are enclosed in parentheses. ・ PNP タイプの – 符号は省略しています。
US6
SM6
2.0 2.1 1.25 2.9 2.8 1.6(mm)
(mm)
NPN
PNP
PNP + NPN
NPN
PNP
PNP + NPN
HN1C01 FU
HN1B01 FU
(
p10) HN1A01 FU
(
p8)
HN2C01 FU
(
p7) HN1B04 FU
HN1C01 F
HN1A01 F
HN1B01 F
(
p12) HN2A01 FU
(
p9)
(
p10)
(
p7)
(
p8)
HN3C56 FU
(
p11) HN3B02 FU
(
p14)
(
p13)
HN1C07 F
HN1A07 F
(
p10)
(
p7)
HN1A02 F
(
p7)
HN1C03 FU
HN1C03 F
(
p10)
(
p10)
Internal Connections /
内部接続
Number of Pins
p1
p2
p3
p4
p5
p6
5 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 6 p7
p8
p9
p10
p11
p12
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 6 p13
p14
Q2 Q1 Q2 Q1Bias Resistor Built-in Transistors /
抵抗内蔵型トランジスタ(
BRT
)
(Single, General-Purpose) /
(シングル品
,
汎用タイプ)
Ratings
V
CEO(V)
50
I
C(mA)
100
Internal
Resistors
(k
Ω)
VESM
SSM
USM
S-MINI
SOT23
1.2 1.2 0.8
(mm)
1.6 1.6 0.8(mm)
2.0 2.1 1.25(mm)
2.9 2.5 1.5(mm)
2.9 2.4 1.3(mm)
R1
R2
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
4.7 4.7RN1101 MFV
RN2101 MFV
RN1101 RN2101 RN1301 RN2301 RN1401 RN2401 TDTC143
E
*
TDTA143 E
*
10 10RN1102 MFV
RN2102 MFV
RN1102 RN2102 RN1302 RN2302 RN1402 RN2402 TDTC114
E
*
TDTA114 E
*
22 22RN1103 MFV
RN2103 MFV
RN1103 RN2103 RN1303 RN2303 RN1403 RN2403 TDTC124
E
*
TDTA124 E
*
47 47RN1104 MFV
RN2104 MFV
RN1104 RN2104 RN1304 RN2304 RN1404 RN2404 TDTC144
E
*
TDTA144 E
*
2.2 47RN1105 MFV
RN2105 MFV
RN1105 RN2105 RN1305 RN2305 RN1405 RN2405 TDTC123
J
*
TDTA123 J
*
4.7 47RN1106 MFV
RN2106 MFV
RN1106 RN2106 RN1306 RN2306 RN1406 RN2406 TDTC143
Z
*
TDTA143 Z
*
10 47RN1107 MFV
RN2107 MFV
RN1107 RN2107 RN1307 RN2307 RN1407 RN2407 TDTC114
Y
*
TDTA114 Y
*
22 47RN1108 MFV
RN2108 MFV
RN1108 RN2108 RN1308 RN2308 RN1408 RN2408
47 22RN1109 MFV
RN2109 MFV
RN1109 RN2109 RN1309 RN2309 RN1409 RN2409
4.7 ̶RN1110 MFV
RN2110 MFV
RN1110 RN2110 RN1310 RN2310 RN1410 RN2410
10 ̶RN1111 MFV
RN2111 MFV
RN1111 RN2111 RN1311 RN2311 RN1411 RN2411
22 ̶RN1112 MFV
RN2112 MFV
RN1112 RN2112 RN1312 RN2312 RN1412 RN2412
47 ̶RN1113 MFV
RN2113 MFV
RN1113 RN2113 RN1313 RN2313 RN1413 RN2413
1 10RN1114 MFV
RN2114 MFV
RN1114 RN2114 RN1314 RN2314 RN1414 RN2414
2.2 10RN1115 MFV
RN2115 MFV
RN1115 RN2115 RN1315 RN2315 RN1415 RN2415
4.7 10RN1116 MFV
RN2116 MFV
RN1116 RN2116 RN1316 RN2316 RN1416 RN2416
10 4.7RN1117 MFV
RN2117 MFV
RN1117 RN2117 RN1317 RN2317 RN1417 RN2417
47 10RN1118 MFV
RN2118 MFV
RN1118 RN2118 RN1318 RN2318 RN1418 RN2418
1 ̶RN1119 MFV
RN2119 MFV
100 100RN1130 MFV
RN2130 MFV
100 ̶RN1131 MFV
RN2131 MFV
200 ̶RN1132 MFV
RN2132 MFV
・ For the PNP transistors, the minus sign (–) indicating a negative voltage is omitted. *: New product / 新製品 ・ PNP タイプの – 符号は省略しています。
(Single, High-Current/Muting Switch) /
(シングル品
,
ハイカレントタイプ
/
ミューティングスイッチタイプ)
High Current
Ratings
V
CEO(V)
50
I
C(mA)
800
Internal
Resistors
(k
Ω)
S-MINI
2.9 2.5 1.5(mm)
R1
R2
NPN
PNP
1 1RN1421 RN2421
2.2 2.2RN1422 RN2422
4.7 4.7RN1423 RN2423
10 10RN1424 RN2424
0.47 10RN1425 RN2425
1 10RN1426 RN2426
2.2 10RN1427 RN2427
・ For the PNP transistors, the minus sign (–) indicating a negative voltage is omitted.Bias Resistor Built-in Transistors /
複合抵抗内蔵型トランジスタ(
BRT
)
(Dual, General-Purpose) /
(デュアル品
,
汎用タイプ)
Classification
Absolute
Maximum
Ratings
Internal Resistors
ESV
USV
SMV
V
CEOI
CQ1
Q2
1.6 1.6 1.2(mm)
2.0 2.1 1.25(mm)
2.9 2.8 1.6(mm)
NPN x 2
PNP x 2
NPN x 2
PNP x 2
NPN x 2
PNP x 2
Q1 R1 R1 R2 R2 Q2 Q1 R1 R1 R2 R2 Q2 Q1 R1 R1 R2 R2 Q2 Q1 R1 R1 R2 R2 Q2 Q1 R1 R1 R2 R2 Q2 Q1 R1 R1 R2 R2 Q2(k
Ω)
(k
Ω)
R1
R2
R1
R2
(V)
(mA)
Common emitter Common emitter Common emitter Common emitter Common emitter Common emitter
General-purpose 50 100 4.7 4.7 4.7 4.7
RN1701 JE
RN2701 JE
RN1701 RN2701 RN1501 RN2501
10 10 10 10RN1702 JE
RN2702 JE
RN1702 RN2702 RN1502 RN2502
22 22 22 22RN1703 JE
RN2703 JE
RN1703 RN2703 RN1503 RN2503
47 47 47 47RN1704 JE
RN2704 JE
RN1704 RN2704 RN1504 RN2504
2.2 47 2.2 47RN1705 JE
RN2705 JE
RN1705 RN2705 RN1505 RN2505
4.7 47 4.7 47RN1706 JE
RN2706 JE
RN1706 RN2706 RN1506 RN2506
10 47 10 47RN1707 JE
RN2707 JE
RN1707 RN2707 RN1507 RN2507
22 47 22 47RN1708 JE
RN2708 JE
RN1708
RN2708
RN1508
47 22 47 22RN1709 JE
RN2709 JE
RN1709
RN2709 RN1509
4.7 ̶ 4.7 ̶RN1710 JE
RN2710 JE
RN1710 RN2710 RN1510 RN2510
10 ̶ 10 ̶RN1711 JE
RN2711 JE
RN1711 RN2711 RN1511 RN2511
22 ̶ 22 ̶RN2712 JE
47 ̶ 47 ̶RN2713 JE
1 10 1 10RN2714
・ For the PNP transistors, the minus sign (–) indicating a negative voltage is omitted.・ The internal connection diagrams only show the general configurations of the circuits. ・ PNP タイプの – 符号は省略しています。
Bias Resistor Built-in Transistors /
複合抵抗内蔵型トランジスタ(
BRT
)
(Dual, General-Purpose) /
(デュアル品
,
汎用タイプ)
Classification
Absolute
Maximum
Ratings
Internal Resistors
ES6
V
CEOI
CQ1
Q2
1.6 1.6 1.2(mm)
NPN x 2
PNP x 2
PNP + NPN
NPN + PNP
Q1 Q2 R2 R2 R1 R1 Q1 Q2 R2 R2 R1 R1 R1 R1 Q1 Q2 R2 R2 R1 R1 Q1 Q2 R2 R2(k
Ω)
(k
Ω)
R1 R2 R1 R2
(V) (mA)
General-purpose 50 100 4.7 4.7 4.7 4.7RN1901 FE
RN2901 FE
RN4901 FE
RN4981 FE
10 10 10 10RN1902 FE
RN2902 FE
RN4902 FE
RN4982 FE
22 22 22 22RN1903 FE
RN2903 FE
RN4903 FE
RN4983 FE
47 47 47 47RN1904 FE
RN2904 FE
RN4904 FE
RN4984 FE
2.2 47 2.2 47RN1905 FE
RN2905 FE
RN4905 FE
RN4985 FE
4.7 47 4.7 47RN1906 FE
RN2906 FE
RN4906 FE
RN4986 FE
10 47 10 47RN1907 FE
RN2907 FE
RN4907 FE
RN4987 FE
22 47 22 47RN1908 FE
RN2908 FE
RN4908 FE
RN4988 FE
47 22 47 22RN1909 FE
RN2909 FE
RN4909 FE
RN4989 FE
4.7 ̶ 4.7 ̶RN1910 FE
RN2910 FE
RN4910 FE
RN4990 FE
10 ̶ 10 ̶RN1911 FE
RN2911 FE
RN4911 FE
RN4991 FE
2.2 47 22 47RN49A1FE
・ For the PNP transistors, the minus sign (–) indicating a negative voltage is omitted. ・ The internal connection diagrams only show the general configurations of the circuits. ・ PNP タイプの – 符号は省略しています。 ・ 内部接続図はイメージ図です。
Classification
Absolute
Maximum
Ratings
Internal Resistors
US6
V
CEOI
CQ1
Q2
2.0 2.1 1.25(mm)
NPN x 2
PNP x 2
NPN x 2
PNP x 2
PNP + NPN
NPN + PNP
Q1 Q2 R2 R2 R1 R1 Q1 Q2 R2 R2 R1 R1 R2 Q2 Q1 R1 R2 R1 R2 Q2 Q1 R1 R2 R1 R1 R1 Q1 Q2 R2 R2 R1 R1 Q1 Q2 R2 R2(k
Ω)
(k
Ω)
R1 R2 R1 R2
(V) (mA)
General-purpose 50 100 4.7 4.7 4.7 4.7RN1901 RN2901 RN1961 RN2961 RN4901 RN4981
10 10 10 10RN1902 RN2902 RN1962 RN2962 RN4902 RN4982
22 22 22 22RN1903 RN2903 RN1963 RN2963 RN4903 RN4983
47 47 47 47RN1904 RN2904 RN1964 RN2964 RN4904 RN4984
2.2 47 2.2 47RN1905 RN2905 RN1965 RN2965 RN4905 RN4985
4.7 47 4.7 47RN1906 RN2906
RN2966 RN4906 RN4986
10 47 10 47RN1907 RN2907
RN2967 RN4907 RN4987
22 47 22 47RN1908 RN2908 RN1968 RN2968 RN4908 RN4988
47 22 47 22RN1909 RN2909
RN2969 RN4909
4.7 ̶ 4.7 ̶RN1910 RN2910 RN1970 RN2970 RN4910 RN4990
10 ̶ 10 ̶RN1911 RN2911 RN1971 RN2971 RN4911
47 ̶ 47 ̶RN1973
2.2 47 22 47RN49A1
47 47 2.2 47RN49A2
・ For the PNP transistors, the minus sign (–) indicating a negative voltage is omitted. ・ The internal connection diagrams only show the general configurations of the circuits. ・ PNP タイプの – 符号は省略しています。
Classification
Absolute
Maximum
Ratings
Internal Resistors
SM6
V
CEOI
CQ1
Q2
2.9 2.8 1.6(mm)
NPN x 2
PNP x 2
PNP + NPN
Q1 Q2 R2 R2 R1 R1 Q1 Q2 R2 R2 R1 R1 R1 R1 Q1 Q2 R2 R2(k
Ω)
(k
Ω)
R1 R2 R1 R2
(V) (mA)
General-purpose 50 100 4.7 4.7 4.7 4.7RN1601 RN2601 RN4601
10 10 10 10RN1602 RN2602 RN4602
22 22 22 22RN1603 RN2603 RN4603
47 47 47 47RN1604 RN2604 RN4604
2.2 47 2.2 47RN1605 RN2605 RN4605
4.7 47 4.7 47RN1606 RN2606 RN4606
10 47 10 47RN1607 RN2607 RN4607
22 47 22 47RN1608 RN2608 RN4608
47 22 47 22RN1609 RN4609
4.7 ̶ 4.7 ̶RN1610 RN2610 RN4610
10 ̶ 10 ̶RN1611 RN2611 RN4611
22 22 10 10RN46A1
・ For the PNP transistors, the minus sign (–) indicating a negative voltage is omitted. ・ The internal connection diagrams only show the general configurations of the circuits. ・ PNP タイプの – 符号は省略しています。
Bipolar Power Transistors /
バイポーラパワートランジスタ
Radio-Frequency Switching Power Transistors /
高速スイッチング用パワートランジスタ
(2SA/2SC/TTA/TTC Series) /
(
2SA, 2SC, TTA, TTC
シリーズ)
V
CEO(V)
I
C(A)
10
20
30
45
50
12SA2070
(
7)
TPC6701
(W)(
r)
HN4B101 J
(M)(V)
2SC5810
(
7)
(NPN: 1.2 A)TPC6901 A
(M)(
r)
(PNP: 0.7 A)TPCP8901
(M)(P)
(PNP: 0.8 A)TTA007
(
a)
TTC007
(
a)
TPC6604
(
r)
TPC6504
(
r)
1.52SA2058
(
a) 2SA2065
(
a)
2SC5784
(
a)
2SA2069
(
7)
2SC5819
(
7)
TPC6503
(
r)
2TPCP8902
(M)(P)
2SA1241 2SC3076 (
F)
2SA2066
(
7)
2SC5755
(
a)
TPC6902
(M)(
r)
2SA2056
(
a)
2SC5785
(
7)
(PNP: -1.7A)TPC6601
(
r)
TPC6501
(
r)
HN4B102 J
(M)(V)
TPCP8701 (W)(P)
TPC6602
(
r)
(PNP: -1.8A)2SA2060
(
7)
TPCP8504
(P)
2.52SA2061
(
a)
2SC5692
(
a)
2SC6033
(
a)
TPCP8602
(P)
32SA2059
(
7)
2SC5976
(
a)
TPCP8H02 ($)(P)
TPC6603
(
r)
2SC5712
(
7)
TPC6502
(
r)
TPCP8505
(P)
2SC6126
(
7)
TPCP8511
(P)
3.52SC5738
(
a)
42SC5714
(
7)
2SC5906
(
a)
2SC5703
(
a)
2SC5713
(
7)
2SC6125
(
7)
TPCP8601
(P)
52SA1244
2SA2097
(
F)
TTA005
(
F)
2SC5886 A
(
F)
TTC016
*
(
F)
72SC6000
(
F)
*: New product / 新製品Legend /
凡例Package
Other Remarks
Through-Hole Package
Surface-Mount Package
(
F) PW-Mold
(
a) TSM
(%) Darlington(
s) TO-3P(N)
(
7) PW-Mini
(#) Built-in Zener diode(
※) TO-3P(L)
(
F) PW-Mold
Part number in italic signifies built in freewheel diode.(
p) TO-220SIS
(
r) VS-6
2SA****/2SC****: Complementary(@) TO-126N
(P) PS-8
(&) 2-in-1 (transistor + diode)(V) SMV
($) 2-in-1 (transistor + S-MOS)(W) 2-in-1 (NPN (or PNP) × 2) (M) 2-in-1 (NPN + PNP)
V
CEO(V)
I
C(A)
80
120
140
160
200
0.82SA1201
2SC2881
(
7)
1TPCP8507
(P)
TPCP8510
(P)
2SC6061
(
a)
1.52SA1225
(
F)
TTA004 B
TTC004 B
(@)
22SA2206 2SC6124 (
7)
TTA008 B
TTC015 B
(@)
3TTA003
(
F)
TTA009
*
(
F)
2SC6076
(
F)
TTC017 *
(
F)
52SC3303
(
F)
102SA1941 2SC5198
(
s)
(140 V) 12TTA1452 B
TTC3710 B
(
p)
2SA1942 2SC5199 (
※)
2SA2120 2SC5948 (
s)
152SA2121 2SC5949 (
※)
18TTA0001 TTC0001 (
s)
TTA0002 TTC0002 (
※)
V
CEO(V)
I
C(A)
230
300
350/375/400
(550)/600
800
0.052SC6127
(
F)
TTC5460 B
(@)
0.3TPCP8604
(P)
0.5TTC013
(
7)
(350 V)2SA1971
(
7)
2SA2142
(
F)
1TTA006 B
TTC011 B
(@)
TTC014
(
F)
TTC005
(
7)
(285 V)2SA2184
(
F)
(550 V) 1.5TTC008
(
F)
2SC6142
(
F)
(285 V) (375 V) 22SC5548 A
(
F)
2SA2034
TTC012
(
F)
(375 V) 52SC5354
(
s)
152SA1943 2SC5200 (
※)
2SA1943 N
2SC5200 N
(
s)
2SA1987 2SC5359 (
※)
TTA1943 TTC5200 (
※)
2SA1962 2SC5242 (
s)
2SA1986 2SC5358 (
s)
・ The products shown in bold are manufactured in offshore fabs. *: New product / 新製品 ・ 太字製品は当社海外工場にて生産しております。
Legend /
凡例Package
Other Remarks
Through-Hole Package
Surface-Mount Package
(
F) PW-Mold
(
a) TSM
(%) Darlington(
s) TO-3P(N)
(
7) PW-Mini
(#) Built-in Zener diodeLow-Frequency Power Transistors /
低周波用パワートランジスタ
(2SB/2SD/TTB/TTD Series) /
(
2SB, 2SD, TTB, TTD
シリーズ)
V
CEO(V)
I
C(A)
60/(65)
80
100
120
250
400
0.82SD2719 (#)(%)(
a)
0.9TPCP8L01
(1) (&)(P) 12SD2686 (#)(%)(
7)
2TTB1067 B
TTD1509 B
(@)
32SB906
(
F)
TTB002
(
F)
42SD1223
(%)(
F)
6TTD1410 B
(
p)(%) TTD1409 B
(
p)(%)
7TTB1020 B
TTD1415 B
(
p)(%)
Note (1): NPN + HED (200 V/1 A)・ The products shown in bold are manufactured in offshore fabs. ・ 太字製品は当社海外工場にて生産しております。
Legend /
凡例Package
Other Remarks
Through-Hole Package
Surface-Mount Package
(
F) PW-Mold
(
a) TSM
(%) Darlington(
s) TO-3P(N)
(
7) PW-Mini
(#) Built-in Zener diode(
※) TO-3P(L)
(
F) PW-Mold
Part number in italic signifies built in freewheel diode.(
p) TO-220SIS
(
r) VS-6
2SA****/2SC****: Complementary(@) TO-126N
(P) PS-8
(&) 2-in-1 (transistor + diode)(V) SMV
($) 2-in-1 (transistor + S-MOS)(W) 2-in-1 (NPN (or PNP) × 2) (M) 2-in-1 (NPN + PNP)
Transistors for Power Amps /
パワーアンプ用トランジスタ
(Output Stage) /
(出力段)
Part Number
I
CV
CEOP
Cf
TPackage
NPN
PNP
(A)
(V)
(W)
Tc = 25
℃(MHz)
Typ. (NPN/PNP)
V
CE(V)
I
C(A)
2SC5198 2SA1941
10 140 100 30 5 1 TO-3P(N)TTC0001 TTA0001
18 160 150 30 5 12SC5200 N
2SA1943 N
15 230 150 30 5 12SC5948 2SA2120
12 200 200 30/25 5 12SC5199 2SA1942
12 160 120 30 5 1 TO-3P(L)TTC0002 TTA0002
18 160 180 30 5 1TTC5200 TTA1943
15 230 150 30 5 12SC5359 2SA1987
15 230 180 30 5 12SC5949 2SA2121
15 200 220 30/25 5 1(Driver Stage) /
(ドライバ段)
Part Number
I
CV
CEOP
Cf
TPackage
NPN
PNP
(A)
(V)
(W)
Tc = 25
℃(MHz)
Typ. (NPN/PNP)
V
CE(V)
I
C(A)
2SC2881 2SA1201
0.8 120 1 (1) 120 5 0.1 PW-MiniTTC004 B
TTA004 B
1.5 160 10 100 10 0.1 TO-126NTTC011 B
TTA006 B
1 230 10 100/70 10 0.1Note (1): The rating applies when the transistor is mounted on an FR-4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm), Ta = 25℃ /
Transistors for MOS Gate Drivers / MOS
ゲートドライバ用トランジスタ
(1-in-1 Transistors for Small-Motor Driver Applications) /
(小型モータドライバ用
, 1-in-1
トランジスタ)
Part Number Polarity
Absolute Maximum Ratings
h
FEV
CE(sat)Complementary
Package
Remarks
V
CEO(V)
I
C(A)
P
C (1)(mW)
V
CE(V)
I
C(A)
(V)
I
C(A)
I
B(mA)
Min
Max
Max
2SA2058
PNP ー10 ー1.5 500 200 500 ー2 ー0.2 ー0.19 ー0.6 ー202SC5755
TSM 2.9 2.8 1.6 (mm)2SA2065
ー20 ー1.5 500 200 500 ー2 ー0.15 ー0.14 ー0.5 ー172SC5784
2SA2061
ー20 ー2.5 625 200 500 ー2 ー0.5 ー0.19 ー1.6 ー532SC5738
TTA007
ー50 ー1 700 200 500 ー2 ー0.1 ー0.2 ー0.3 ー10TTC007
2SA2056
ー50 ー2 625 200 500 ー2 ー0.3 ー0.20 ー1.0 ー332SC5692
2SC5755
NPN 10 2 500 400 1000 2 0.2 0.12 0.6 122SA2058
2SC5784
20 1.5 500 400 1000 2 0.15 0.12 0.5 102SA2065
2SC5738
20 3.5 625 400 1000 2 0.5 0.15 1.6 322SA2061
TTC007
50 1 700 400 1000 2 0.1 0.12 0.3 6TTA007
2SC5692
50 2.5 625 400 1000 2 0.3 0.14 1.0 202SA2056
2SA2066
PNP ー10 ー2 1000 200 500 ー2 ー0.2 ー0.19 ー0.6 ー202SC5785
PW-Mini 4.6 4.2 2.5 (mm)2SA2069
ー20 ー1.5 1000 200 500 ー2 ー0.15 ー0.14 ー0.5 ー172SC5819
2SA2059
ー20 ー3 1000 200 500 ー2 ー0.5 ー0.19 ー1.6 ー532SC5714
2SA2070
ー50 ー1 1000 200 500 ー2 ー0.1 ー0.20 ー0.3 ー102SC5810
2SA2060
ー50 ー2 1000 200 500 ー2 ー0.3 ー0.20 ー1.0 ー332SC5712
2SC5785
NPN 10 2 1000 400 1000 2 0.2 0.12 0.6 122SA2066
2SC5819
20 1.5 1000 400 1000 2 0.15 0.12 0.5 102SC2069
2SC5714
20 4 1000 400 1000 2 0.5 0.15 1.6 322SA2059
2SC5810
50 1 1000 400 1000 2 0.1 0.17 0.3 62SA2070
2SC5712
50 3 1000 400 1000 2 0.3 0.14 1 202SA2060
2SC6126
50 3 1000 250 400 2 0.3 0.18 1 33 ̶ (2)Note (1): The rating applies when the transistor is mounted on an FR-4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm). /
FR-4 基板 (Cu 面積 645 mm2、ガラスエポキシ、t = 1.6 mm) 実装時
(2): Ultra-high-speed using the Super Hi-Met process and Low VCE(sat) products. / 超高速品 (プロセス : Super Hi-Met) および低 VCE(sat)品
(2-in-1 Transistors for Small-Motor Driver Applications) /
(小型モータドライバ用
, 2-in-1
トランジスタ)
Part Number Polarity
Absolute Maximum Ratings
h
FEV
CE(sat)Package
Circuit Configuration
(Top View)
V
CEO(V)
I
C(A)
I
CP(A)
P
C (1)(mW)
V
CE(V)
I
C(A)
(V)
I
C(A)
I
B(mA)
Min
Max
Max
HN4B101 J
PNP ー30 ー1.0 ー5 550 200 500 ー2 ー0.12 ー0.2 ー0.4 ー13 SMV PNP NPN 1 4 5 2 3 NPN 30 1.2 5 550 200 500 2 0.12 0.17 0.4 13HN4B102 J
PNP ー30 ー1.8 ー8 750 200 500 ー2 ー0.2 ー0.2 ー0.6 ー20 NPN 30 2 8 750 200 500 2 0.2 0.14 0.6 20TPC6901 A
PNP ー50 ー0.7 ー5 400 200 500 ー2 ー0.1 ー0.23 ー0.3 ー10 VS-6 NPN PNP 1 4 5 6 2 3 NPN 50 1 5 400 400 1000 2 0.1 0.17 0.3 6TPC6902
PNP ー30 ー1.7 ー8 700 200 500 ー2 ー0.2 ー0.2 ー0.6 ー20 NPN 30 2 8 700 200 500 2 0.2 0.14 0.6 20TPCP8901
PNP ー50 ー0.8 ー5 830 200 500 ー2 ー0.1 ー0.2 ー0.3 ー10 PS-8 NPN PNP 1 5 6 7 8 2 3 4 NPN 50 1 5 830 400 1000 2 0.1 0.17 0.3 6TPCP8902
PNP ー30 ー2 ー8 890 200 500 ー2 ー0.2 ー0.2 ー0.6 ー20 NPN 30 2 8 890 200 500 2 0.2 0.14 0.6 20Note (1): The rating applies when the transistor is mounted on an FR-4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm) and is in single-device operation.
Copper thickness: 35 μm for the TPC6901A and 70 μm for the other transistors FR-4 基板 (Cu 面積 645 mm2、ガラスエポキシ、t = 1.6 mm) 実装時 , 1 素子通電時
Transistors for Switching Power Supplies /
スイッチング電源用トランジスタ
(For AC/DC Converters) /
(
AC-DC
コンバータ用)
Part Number
Applications
Absolute Maximum Ratings (Ta = 25
℃)
Package
V
CBO(V)
V
CEO(V)
I
C(A)
Pc (W)
Tc = 25
℃(
dTa = 25
℃)
TTC005
Switching regulator 600 285 1 1.1d (1) PW-MiniTTC008
1.5 1.1d PW-MoldTTC013
350 0.5 1d (1) PW-Mini2SC5548 A
400 2 15 PW-Mold2SC6142
800 375 1.5 1.1d PW-MoldTTC012
2 1.1d PW-MoldTTC014
900 800 1 40 PW-Mold2SC5354
900 800 5 100 TO-3P(N) Note (1): The rating applies when the transistor is mounted on an FR-4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm). /FR-4 基板 (Cu 面積 645 mm2、ガラスエポキシ、t = 1.6 mm) 実装時
General-Purpose Transistors /
汎用トランジスタ
(TO-220SIS)
Part Number
Absolute Maximum Ratings (Ta = 25
℃)
h
FEV
CE(sat)Remarks
V
CEO(V)
I
C(A)
P
C(W)
Tc = 25
℃V
CE(V)
I
C(A)
I
C(A)
I
B(A)
NPN
PNP
Min
Max
Max
TTC3710 B
TTA1452 B
80 12 30 120 240 1 1 0.4 6 0.3TTD1415 B
TTB1020 B
100 7 25/30 2000 15000 3 3 1.5 3 6 m DarlingtonTTD1410 B
̶ 250 6 25 2000 ̶ 2 2 2.0 4 40 m DarlingtonTTD1409 B
̶ 400 6 25 600 ̶ 2 2 2.0 4 40 m Darlington(TO-126N)
Part Number
Absolute Maximum Ratings (Ta = 25
℃)
h
FEV
CE(sat)Remarks
V
CEO(V)
I
C(A)
P
C(W)
Tc = 25
℃V
CE(V)
I
C(A)
I
C(A)
I
B(A)
NPN
PNP
Min
Max
Max
TTC015 B
TTA008 B
80 2 15 100 200 2 0.5 0.5 1 0.1TTD1509 B
TTB1067 B
80 2 15 2000 ̶ 2 1 1.5 1 1 m DarlingtonTTC004 B
TTA004 B
160 1.5 15 140 280 5 0.1 0.5 0.5 50 mTTC011 B
TTA006 B
230 1 15 100 320 5 0.2 1.0 0.3 30 mTTC5460 B
̶ 800 0.05 15 15 ̶ 5 7 m 1.0 20 m 4 mTransistors for High-Voltage Power Supplies /
高電圧電源用トランジスタ
(For DC/DC Converters) /
(
DC-DC
コンバータ用)
Part Number
Absolute Maximum Ratings
h
FEV
CE(sat)(V)
Package
V
CEX(V) V
CEO(V)
I
C(A)
P
C(W)
V
CE(V)
I
C(A)
I
C(A)
I
B(mA)
Min
Max
Max
2SC6061
150 120 1 0.625 (1) 120 300 2 0.1 0.14 0.3 10 TSMTPCP8510
150 120 1 1.1 (1) 120 300 2 0.1 0.14 0.3 10 PS-8TPCP8507
150 120 1 1.25 (1) 120 300 2 0.1 0.14 0.3 10 PS-82SC6076
160 80 3 10 (2) 180 450 2 0.5 0.5 1 100 PW-Mold2SC6124
160 80 2 1 (1) 100 200 2 0.5 0.5 1 100 PW-MiniTTC015 B
160 80 2 10 (2) 100 200 2 0.5 0.5 1 100 TO-126NNote (1): The rating applies when the transistor is mounted on an FR-4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm). /
FR-4 基板 (Cu 面積 645 mm2、ガラスエポキシ、t = 1.6 mm) 実装時
(2): Tc = 25℃
(Transistors for Linear Regulators) /
(ドロッパ用)
Part Number
Absolute Maximum Ratings
h
FEV
CE(sat)(V)
Package
V
CEO(V)
I
C(A)
Tc = 25
P
C(W)
℃
Min
Max
V
CE(V)
I
C(A)
Max
I
C(A)
I
B(mA)
2SB906
ー60 ー3 20 60 200 ー5 ー0.5 ー1.7 ー3 ー300 PW-MoldTTB002
ー60 ー3 30 100 250 ー5 ー0.5 ー1.7 ー3 ー300 PW-MoldTTA005
ー50 ー5 24 200 500 ー2 ー0.5 ー0.27 ー1.6 ー53 PW-Mold(High-Voltage Transistors) /
(高耐圧トランジスタ部)
Part Number
Absolute Maximum Ratings
Package
Circuit Configuration
(Top View)
Remarks
V
CEO(V)
I
C(A)
P
C(W)
2SA1971
ー400 ー0.5 1 (1) PW-Mini TPCP8604 PNP 1 5 6 7 8 2 3 4TPCP8604
ー400 ー0.3 1.1 (1) PS-8 SMD2SA2184
ー550 ー1 20 (2) PW-Mold SMD only2SA2142
ー600 ー0.5 15 (2) PW-Mold SMD only2SC6127
800 0.05 10 (2) PW-Mold SMD onlyTTC5460 B
800 0.05 10 (2) TO-126NNote (1): The rating applies when the transistor is mounted on an FR-4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm). /
FR-4 基板 (Cu 面積 645 mm2、ガラスエポキシ、t = 1.6 mm) 実装時
(2): Tc = 25℃
・ The circuit configuration diagrams only show the general configurations of the circuits. ・ 内部構成はイメージ図です。
Low-Saturation-Voltage Transistors /
低飽和電圧トランジスタ
(Small Surface-Mount Packages for Personal Equipments) /
(携帯機器用小型面実装パッケージ)
Part Number Configuration
Absolute Maximum Ratings
h
FEV
CE(sat)(V)
Marking
Package
V
CEO(V) I
C(A)
I
CP(A)
P
C(mW)
(1)P
C(mW)
(1)
t = 10 s
Min
Max
V
CE(V) I
C(A)
Max
I
C(A) I
B(mA)
2SA2058
PNP single ー10 ー1.5 ー2.5 500 750 200 500 ー2 ー0.2 ー0.19 ー0.6 ー20 WM TSM equivalent to SC-59 SOT-232SA2065
ー20 ー1.5 ー2.5 500 750 200 500 ー2 ー0.15 ー0.14 ー0.5 ー17 WK2SA2061
ー20 ー2.5 ー4 625 1000 200 500 ー2 ー0.5 ー0.19 ー1.6 ー53 WETTA007
ー50 ー1 ー2 700 1100 200 500 ー2 ー0.1 ー0.2 ー0.3 ー10 WH2SA2056
ー50 ー2 ー3.5 625 1000 200 500 ー2 ー0.3 ー0.20 ー1.0 ー33 WF2SC5755
NPN single 10 2 3.5 500 750 400 1000 2 0.2 0.12 0.6 12 WL2SC5784
20 1.5 2.5 500 750 400 1000 2 0.15 0.12 0.5 10 WJ2SC5738
20 3.5 6 625 1000 400 1000 2 0.5 0.15 1.6 32 WD2SC5976
30 3 5 625 1000 250 400 2 0.3 0.14 1.0 33 WW2SC5906
30 4 7 800 1250 200 500 2 0.5 0.2 1.6 53 WPTTC007
50 1 2 700 1100 400 1000 2 0.1 0.12 0.3 6 WG2SC5692
50 2.5 4 625 1000 400 1000 2 0.3 0.14 1.0 20 WB2SC6033
50 2.5 5 625 1000 250 400 2 0.3 0.18 1.0 33 WX2SC5703
50 4 7 800 1250 400 1000 2 0.5 0.12 1.6 32 WA2SC6061
120 1 2 625 1000 120 300 2 0.1 0.14 0.3 10 WNHN4B101 J
PNP + NPN ±30 ー1/1.2 ±5 550 850 200 500 ±2 ±0.12 ー0.2/0.17 ±0.4 ±13 5K SMVHN4B102 J
±30 ー1.8/2 ±8 750 750 200 500 ±2 ±0.2 ー0.2/0.14 ±0.6 ±20 5L2SA2066
PNP single ー10 ー2 ー3.5 1000 2000 200 500 ー2 ー0.2 ー0.19 ー0.6 ー20 4E PW-Mini equivalent to SC-62 SOP-892SA2069
ー20 ー1.5 ー2.5 1000 2000 200 500 ー2 ー0.15 ー0.14 ー0.5 ー17 4D2SA2059
ー20 ー3 ー5 1000 2500 200 500 ー2 ー0.5 ー0.19 ー1.6 ー53 4F2SA2070
ー50 ー1 ー2 1000 2000 200 500 ー2 ー0.1 ー0.2 ー0.3 ー10 4C2SA2060
ー50 ー2 ー3.5 1000 2500 200 500 ー2 ー0.3 ー0.20 ー1.0 ー33 4G2SA2206
ー80 ー2 ー4 1000 2500 100 200 ー2 ー0.5 ー0.5 ー1.0 ー100 4K2SC5785
NPN single 10 2 3.5 1000 2000 400 1000 2 0.2 0.12 0.6 12 3E2SC5713
10 4 7 1000 2500 400 1000 2 0.5 0.15 1.6 32 2C2SC5819
20 1.5 2.5 1000 2000 400 1000 2 0.15 0.12 0.5 10 3D2SC6125
20 4 8 1000 2500 180 390 2 0.5 0.2 1.6 53 4L2SC5714
20 4 7 1000 2500 400 1000 2 0.5 0.15 1.6 32 2E2SC5810
50 1 2 1000 2000 400 1000 2 0.1 0.17 0.3 6 3C2SC6126
50 3 6 1000 2500 250 400 2 0.3 0.18 1.0 33 4M2SC5712
50 3 5 1000 2500 400 1000 2 0.3 0.14 1 20 2A2SC6124
80 2 4 1000 2500 100 200 2 0.5 0.5 1.0 100 4JTPC6501
NPN single 10 2 3.5 800 1600 400 1000 2 0.2 0.12 0.6 12 H2A VS-6 (equivalent to TSOP-6)TPC6502
50 3 5 800 1600 400 1000 2 0.3 0.14 1 20 H2BTPC6503
20 1.5 2.5 800 1600 400 1000 2 0.15 0.12 0.5 10 H2CTPC6504
50 1 2 800 1600 400 1000 2 0.1 0.17 0.3 6 H2DTPC6601
PNP single ー50 ー2 ー3.5 800 1600 200 500 ー2 ー0.3 ー0.20 ー1.0 ー33 H3ATPC6602
ー10 ー2 ー3.5 800 1600 200 500 ー2 ー0.2 ー0.19 ー0.6 ー20 H3BTPC6603
ー20 ー3 ー5 800 1600 200 500 ー2 ー0.5 ー0.19 ー1.6 ー53 H3ETPC6604
ー50 ー1 ー2 800 1600 200 500 ー2 ー0.1 ー0.23 ー0.3 ー10 H3DTPC6701
NPN/dual 50 1 2 660 (2) ̶ 400 1000 2 0.1 0.17 0.3 6 H4ATPC6901 A
PNP + NPN ±50 ー0.7/1.0 ±5 400 500 200/400 500/1000 ±2 ±0.1 ー0.23/0.17 ±0.3 ー10/6 H6BTPC6902
±30 ー1.7/2 ±8 700 1000 200 500 ±2 ±0.2 ー0.2/0.14 ±0.6 ±20 H6C Note (1): The rating applies when the transistor is mounted on an FR-4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm). /FR-4 基板 (Cu 面積 645 mm2、ガラスエポキシ、t = 1.6 mm) 実装時
Part Number
Configuration
Absolute Maximum Ratings
h
FEV
CE(sat)(V)
Marking
Package
V
CEO(V)
I
C(A)
I
CP(A)
P
C(W)
P
C(W)
t = 10 s
Min
Max
V
CE(V) I
C(A)
Max
I
C(A)
I
B(mA)
2SA2097
PNP single ー50 ー5 ー10 20 (3) ̶ 200 500 ー2 ー0.5 ー0.27 ー1.6 ー53 A2097 PW-Mold SC-63TTA005
ー50 ー5 ー10 24 (4) ̶ 200 500 ー2 ー0.5 ー0.27 ー1.6 ー53 A0052SA1241
ー50 ー2 ー3 10 (3) ̶ 70 240 ー2 ー0.5 ー0.5 ー1 ー50 A12412SA1244
ー50 ー5 ー8 20 (3) ̶ 70 240 ー1 ー1 ー0.4 ー3 ー150 A1244TTA003
ー80 ー3 ー5 10 (3) ̶ 100 200 ー2 ー0.5 ー0.5 ー1 ー100 A003TTA009 *
ー80 ー3 ー5 12 (4) ̶ 100 200 ー2 ー0.5 ー0.5 ー1 ー100 A0092SC6076
NPN single 80 3 5 10 (3) ̶ 180 450 2 0.5 0.5 1 100 C6076TTC017 *
80 3 5 12 (4) ̶ 180 450 2 0.5 0.5 1 100 C0172SC5886 A
50 5 10 20 (3) ̶ 400 1000 2 0.5 0.22 1.6 32 C5886ATTC016 *
50 5 10 24 (4) ̶ 400 1000 2 0.5 0.22 1.6 32 C0162SC3076
50 2 3 10 (3) ̶ 70 240 2 0.5 0.5 1 50 C30762SC3303
80 5 8 20 (3) ̶ 70 240 1 1 0.4 3 150 C33032SC6000
50 7 10 20 (3) ̶ 250 400 2 2.5 0.18 2.5 83 C6000TPCP8507
NPN single 120 1 2 1.25 (1) 3 120 300 2 0.1 0.14 0.3 10 8507 PS-8TPCP8510
120 1 2 1.1 (1) 2.25 120 300 2 0.1 0.14 0.3 10 8510TPCP8511
50 3 5 1.25 (1) 3 250 400 2 0.3 0.18 1 33 8511TPCP8505
50 3 5 1.25 (1) 3 400 1000 2 0.3 0.14 1 20 8505TPCP8504
10 2 3.5 1.2 (1) 2.8 400 1000 2 0.2 0.12 0.6 12 8504TPCP8601
PNP single ー20 ー4 ー7 1.3 (1) 3.3 200 500 ー2 ー0.6 ー0.19 ー2 ー67 8601TPCP8602
ー50 ー2.5 ー4 1.25 (1) 3 200 500 ー2 ー0.3 ー0.2 ー1 ー33 8602TPCP8701
NPN/dual 50 3 5 0.94 (1) 1.77 400 1000 2 0.3 0.14 1 20 8701TPCP8H02
(2) NPN + S-MOS 30 3 5 1 (1) 2 250 400 2 0.3 0.14 1 33 8H02TPCP8901
PNP + NPN ±50 ー0.8/1.0 ±5 0.83 (1) 1.48 200/400 500/1000 ±2 ±0.1 ー0.2/0.17 ±0.3 ー10/6 8901TPCP8902
±30 ±2 ±8 0.89 (1) 1.67 200 500 ±2 ±0.2 ー0.2/0.14 ±0.6 ±20 8902TPCP8L01
(5) NPN Darlington + HED 120 0.9 2 0.9 (1) ̶ 2000 9000 2 1 1.5 1 1 8L01Note (1): The rating applies when the transistor is mounted on an FR-4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm). / *: New product / 新製品
FR-4 基板 (Cu 面積 645 mm2、ガラスエポキシ、t = 1.6 mm) 実装時
(2): Built-in N-ch S-MOS, VDSS = 20 V, ID = 0.1 A, RON = 3 Ω Max / N-ch S-MOS 内蔵、VDSS = 20 V、ID = 0.1 A、RON = 3 ΩMax (3): Tc = 25℃
(4): Tc = 25℃ , Tj = 175℃
Low-Saturation-Voltage Transistors /
低飽和電圧トランジスタ
(Power-Mold Transistors (SC-63/64) ) /
(パワーモールドトランジスタ(
SC-63, SC-64
))
Part Number
Applications
Absolute Maximum Ratings (Ta = 25
℃)
Complementary
Equivalent
Product
Remarks
V
CEO(V)
I
C(A)
P
C(W)
P
C (1)(W)
2SA1241
Power amplification ー50 ー2.0 1.0 10 2SC3076 2SA1892
2SC3076
50 2.0 1.0 10 2SA1241 2SC50292SA1244
High-current switching ー50 ー5.0 1.0 20 ̶ 2SA19052SA2097
ー50 ー5.0 1.0 20 ̶ ̶ High βTTA005
ー50 ー5 1.2 24 ̶ ̶ Tj = 175℃2SC5886 A
50 5 1.0 20 ̶ ̶ High β, VCBO = 120 VTTC016 *
50 5 ̶ 24 ̶ ̶ Tj = 175℃2SB906
Low-frequency power amplification ー60 ー3.0 1.0 20 ̶ 2SB834
TTB002
ー60 ー3.0 1.0 30 ̶ ̶TTA003
Switching, power amplification
ー80 ー3.0 ̶ 10 ̶ ̶
TTA009 *
ー80 ー3 ̶ 12 ̶ ̶ Tj = 175℃2SC6076
80 3 ̶ 10 ̶ ̶TTC017 *
80 3 ̶ 12 ̶ ̶ Tj = 175℃2SC3303
Switching 80 5.0 1.0 20 ̶ 2SC32582SA2034
High-voltage switching ー400 ー2 1.0 15 ̶ ̶2SA2184
ー550 ー1 ̶ 10 ̶ ̶2SA2142
ー600 ー0.5 ̶ 15 ̶ ̶2SC5548 A
400 2 1.0 15 ̶ ̶2SC6127
800 0.05 1.0 10 ̶ ̶2SC6142
375 1.5 1.1 ̶ ̶ ̶TTC008
285 1.5 1.1 ̶ ̶ ̶TTC012
375 2 1.1 ̶ ̶ ̶TTC014
800 1 1.0 40 ̶ ̶2SC6000
High-speed switching 50 7 1.0 20 ̶ ̶Note (1): Tc = 25℃ *: New product / 新製品
(PW-Mini Transistors (SC-62) ) /
(パワーミニトランジスタ(
SC-62
))
Part Number
Absolute Maximum Ratings
Electrical Characteristics
Marking
(1)Equivalent to
TO-92MOD
(TO-92)
Applications
Remarks/
P
CV
CEOI
Ch
FEV
CE(sat)f
T(W)
(V)
(A)
V
CEI
C(V)
I
CI
B(MHz) V
CEI
CNPN
PNP
(2)Min Max (V) (mA) Max (mA) (mA) Typ.
(V) (mA) NPN PNP
NPN
PNP
2SC2881 2SA1201
1 120 0.8 80 240 5 100 1.0 500 50 120 5 100 C □ D □ 2SC2235 2SA965 Audio driver ̶2SA1971
1 ー400 ー0.5 140 400 ー5 ー100 ー1.0 ー100 ー10 35 ー5 ー50 ̶ AL ̶ 2SA1972 High-voltage2SC5785
̶ 1 10 2 400 1000 2 200 0.12 600 12 ̶ ̶ ̶ 3E ̶ ̶ ̶ Low saturation̶
2SA2066
1 ー10 ー2 200 500 ー2 ー200 ー0.19 ー600 ー20 ̶ ̶ ̶ ̶ 4E ̶ ̶ Low saturation2SC5713
̶ 1 10 4 400 1000 2 500 0.15 1600 32 ̶ ̶ ̶ 2C ̶ ̶ ̶ Low saturation2SC5819
̶ 1 20 1.5 400 1000 2 150 0.12 500 10 ̶ ̶ ̶ 3D ̶ ̶ ̶ Low saturation ̶2SA2069
1 ー20 ー1.5 200 500 ー2 ー150 ー0.14 ー500 ー17 ̶ ̶ ̶ ̶ 4D ̶ ̶ Low saturation2SC6125
̶ 1 20 4 180 390 2 500 0.20 1600 53 ̶ ̶ ̶ 4L ̶ ̶ ̶ High-speed switching2SC5714
̶ 1 20 4 400 1000 2 500 0.15 1600 32 ̶ ̶ ̶ 2E ̶ ̶ ̶ Low saturation̶
2SA2059
1 ー20 ー3 200 500 ー2 ー500 ー0.19 ー1600 ー53 ̶ ̶ ̶ ̶ 4F ̶ ̶ Low saturation2SC6126
̶ 1 50 3 250 400 2 300 0.18 1000 33 ̶ ̶ ̶ 4M ̶ ̶ ̶ High-speed switching2SC5712
̶ 1 50 3 400 1000 2 300 0.14 1000 20 ̶ ̶ ̶ 2A ̶ ̶ ̶ Low saturation̶
2SA2060
1 ー50 ー2 200 500 ー2 ー300 ー0.20 ー1000 ー33 ̶ ̶ ̶ ̶ 4G ̶ ̶ Low saturation2SC5810
̶ 1 50 1 400 1000 2 100 0.17 300 6 ̶ ̶ ̶ 3C ̶ ̶ ̶ Low saturation ̶2SA2070
1 ー50 ー1 200 500 ー2 ー100 ー0.2 ー300 ー10 ̶ ̶ ̶ ̶ 4C ̶ ̶ Low saturation2SD2686
̶ 1 60±10 1 2000 ̶ 2 1000 1.5 1000 1 ̶ ̶ ̶ 3H ̶ ̶ ̶ Darlington2SC6124 2SA2206
1 80 2 100 200 2 500 0.5 1000 100 150/100 2 500 4J 4K ̶ ̶ Low saturationTTC005
̶ 1.1 285 1 100 200 5 100 1.0 600 75 ̶ ̶ ̶ 4N ̶ ̶ ̶ LED backlightTTC013
̶ 1 350 0.5 100 200 5 50 0.3 160 20 ̶ ̶ ̶ 4R ̶ ̶ ̶ LED backlight Note (1): £ in the Marking column is replaced by one of the following letters according to the hFE classification: O: Rank O, Y: Rank Y /現品表示欄の £ 内には、hFE分類が入ります。(O ランク→ O、Y ランク→ Y)
(TSM Transistors) /
(
TSM
トランジスタ)
Part Number
Absolute Maximum Ratings
h
FEV
CE(sat)(V)
Marking
Applications
Remarks/
V
CEO(V)
I
C(A)
I
CP(A)
P
C(mW)
(1)P
(1) C(mW)
t=10s
Min
Max
V
CE(V)
I
C(A)
Max
I
C(A)
I
B(mA)
2SA2058
ー10 ー1.5 ー2.5 500 750 200 500 ー2 ー0.2 ー0.19 ー0.6 ー20 WM Low saturation2SA2065
ー20 ー1.5 ー2.5 500 750 200 500 ー2 ー0.15 ー0.14 ー0.5 ー17 WK Low saturation2SA2061
ー20 ー2.5 ー4 625 1000 200 500 ー2 ー0.5 ー0.19 ー1.6 ー53 WE Low saturationTTA007
ー50 ー1 ー2 700 1100 200 500 ー2 ー0.1 ー0.2 ー0.3 ー10 WH Low saturation2SA2056
ー50 ー2 ー3.5 625 1000 200 500 ー2 ー0.3 ー0.20 ー1.0 ー33 WF Low saturation2SC5755
10 2 3.5 500 750 400 1000 2 0.2 0.12 0.6 12 WL Low saturation2SC5784
20 1.5 2.5 500 750 400 1000 2 0.15 0.12 0.5 10 WJ Low saturation2SC5738
20 3.5 6 625 1000 400 1000 2 0.5 0.15 1.6 32 WD Low saturation2SC5976
30 3 5 625 1000 250 400 2 0.3 0.14 1.0 33 WW Ultra-high-speed switching Low saturation voltage2SC5906
30 4 7 800 1250 200 500 2 0.5 0.2 1.6 53 WP Ultra-high-speed switching Low saturation voltageTTC007
50 1 2 700 1100 400 1000 2 0.1 0.12 0.3 6 WG Low saturation2SC5692
50 2.5 4 625 1000 400 1000 2 0.3 0.14 1.0 20 WB Low saturation2SC6033
50 2.5 5 625 1000 250 400 2 0.3 0.18 1.0 33 WX Ultra-high-speed switching Low saturation voltage2SC5703
50 4 7 800 1250 400 1000 2 0.5 0.12 1.6 32 WA Low saturation2SD2719
60±10 0.8 3 800 1250 2000 ̶ 2 1.0 1.5 1 1 WV Darlington2SC6061
120 1 2 625 1000 120 300 2 0.1 0.14 0.3 10 WN Low saturation Note (1): The rating applies when the transistor is mounted on an FR4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm). /IGBTs / IEGTs / IGBT / IEGT
IGBTs / IGBT
(Discrete IGBTs) /
(ディスクリート
IGBT
)
Part Number
Applications Features
Absolute Maximum Ratings (Ta = 25
℃)
Package
Circuit
Configuration
V
CE(sat)Typ.
@Ta = 25
℃tf Typ.
@Ta = 25
℃Remarks
V
CES(V)
Ic
Pc
DC
(A)
Pulsed
(A)
Ta =
25 C (W)
Tc =
25 C (W)
Type
(V)
Ic
(A)
V
GE(V) (
μs)
Test
Conditions
GT15J341
Power supplies (and UPS/PFC/ Motor) High-speed switching 60015 60 ̶ 30 TO-220SIS Isolation, Through-hole (2) 1.5 15 15 0.08 Inductive
load
6th generation
GT20J341
20 80 ̶ 45 TO-220SIS Isolation, Through-hole (2) 1.5 20 15 0.05 6th generationGT30J121
30 60 ̶ 170 TO-3P(N) Through-hole (1) 2.0 30 15 0.05GT30J341
59 120 ̶ 230 TO-3P(N) Through-hole (2) 1.5 30 15 0.04 6th generation, Tj = 175℃GT20J121
Power factor correction Low-frequency switching20 80 ̶ 40 TO-220SIS Isolation, Through-hole (1) 1.25 20 15 0.27
Resistive load Partial switching converter
GT30J122 A
30 100 ̶ 120 TO-3P(N) Through-hole (1) 1.7 50 15 0.2GT40J322
IH rice cookers, IH cooktops, Microwave ovens, Induction heating equipment AC200 V Current resonance 40 100 ̶ 120 TO-3P(N) Through-hole (2) 1.7 40 15 0.2GT50J341
50 100 ̶ 200 TO-3P(N) Through-hole (2) 1.6 50 15 0.15 6th generation, Tj = 175℃GT50JR21
50 100 ̶ 230 TO-3P(N) Through-hole (2) 1.45 50 15 0.08 6.5th generation,Tj = 175℃
GT50JR22
50 100 ̶ 230 TO-3P(N) Through-hole (2) 1.55 50 15 0.05 6.5th generation,Tj = 175℃
GT50MR21
IH rice cookers, IH cooktops, Microwave ovens, Induction heating equipment AC100 V Voltage resonance900 50 100 ̶ 230 TO-3P(N) Through-hole (2) 1.7 50 15 0.18 6.5th generation, Tj = 175℃
GT50N322 A
1000 50 120 ̶ 156 TO-3P(N) Through-hole (2) 2.2 60 15 0.1 High-speed
GT50N324
50 120 ̶ 150 TO-3P(N) Through-hole (2) 1.9 60 15 0.11 6th generationGT50NR21
1050 50 100 ̶ 230 TO-3P(N) Through-hole (2) 1.8 50 15 0.2 6.5th generation,Tj = 175℃
GT60PR21
1100 60 120 ̶ 333 TO-3P(N) Through-hole (2) 2.0 60 15 0.16 6.5th generation,Tj = 175℃
GT40QR21
IH rice cookers, IH cooktops, Microwave ovens, Induction heating equipment AC200 V Voltage resonance1200 40 80 ̶ 230 TO-3P(N) Through-hole (2) 1.9 40 15 0.2 6.5th generation, Tj = 175℃
GT40RR21
1350 40 80 ̶ 230 TO-3P(N) Through-hole (2) 2.0 40 15 0.21 6.5th generation,Tj = 175℃
GT40WR21
1800 40 80 ̶ 375 TO-3P(N) Through-hole (2) 2.9 40 15 0.15 6.5th generation,Tj = 175℃
Circuit Configuration /
内部接続(1) Typical
(2) Built-in FWD
Collector Gate Emitter Collector Gate EmitterIEGTs / IEGT
(Press Pack type) /
(圧接型)
Part Number
Package
Absolute Maximum Ratings
V
CE(sat)(V)
V
F(V)
V
CES(V)
I
C(A)
T
j( C)
Max
Test Condition
@I
C(A)/V
GE(V)
Max
Test Condition
@I
C(A)/V
GE(V)
ST1200FXF24
PPI85B 3300 1200 125 4.2 1200/15 3.8 1200/0ST750GXH24
PPI85B 4500 750 125 4 750/15 4.2 750/0ST1200GXH24A
PPI85B 4500 1200 125 3.8 1200/15 ̶ ̶ST1500GXH24
PPI125A2 4500 1500 125 4 1500/15 4.2 1500/0ST2100GXH24A
PPI125A2 4500 2100 125 4 2100/15 ̶ ̶ST3000GXH31A **
PPI125A2 4500 3000 150 ̶ 3000/15 ̶ ̶ **: Under development / 開発中(Plastic Module type) /
(プラスチックモジュール型)
Part Number
Package
Absolute Maximum Ratings
V
CE(sat)(V)
V
F(V)
Circuit
Configuration
V
CES(V)
I
C(A)
T
j( C)
Max
Test Condition
@I
C(A)/V
GE(V)
Max
Test Condition
@I
C(A)/V
GE(V)
MG400FXF2YS53
PMI143C 3300 400 125 4.5 400/15 3.5 400/0 2 in 1MG500FXF2YS61
PMI142C 3300 500 150 4.6 500/15 4.1 500/0 2 in 1MG800FXF1US53
PMI143B 3300 800 125 4.5 800/15 3.5 800/0 1 in 1MG1200FXF1US53
PMI193 3300 1200 125 4.5 1200/15 3.5 1200/0 1 in 1MG1500FXF1US62
PMI193D 3300 1500 150 3.8 1500/15 3.8 1500/0 1 in 1MG1500FXF1US63
PMI193D 3300 1500 150 3.8 1500/15 3.8 1500/0 1 in 1MG900GXH1US53
PMI193 4500 900 125 4.7 900/15 3.8 900/0 1 in 1MG1200GXH1US61
PMI193D 4500 1200 150 4.0 1200/15 3.6 1200/0 1 in 1(SiC Hybrid Plastic Module type) /
(
SiC
ハイブリッドプラスチックモジュール型)
Part Number
Package
Absolute Maximum Ratings
V
CE(sat)(V)
V
F(V)
Circuit
Configuration
V
CES(V)
I
C(A)
T
j( C)
Max
Test Condition
@I
C(A)/V
GE(V)
Max
Test Condition
@I
C(A)/V
GE(V)
MG1200V2YS71
PMI142C 1700 1200 150 3.8 1200/15 3.5 1200/0 2 in 1MG1500FXF1US71
PMI193D 3300 1500 150 3.8 1500/15 4.6 1500/0 1 in 1Multi-Chip Discrete Devices /
異品種混載複合デバイス
Multi-Chip Discrete Devices /
異品種混載複合デバイス
Features
Component
Devices
Ratings
SM6
Internal Connections
Breakdown Voltage (V)
Current (mA)
High breakdown voltage PNP Q1 2SA1587 VCEO ー120 IC ー100
HN2E04 F
Independent PNP + small-signal diode
Q1 Q2
Standard high-speed switching Q2 1SS352 VR 80 IO 100
・ The internal connection diagrams only show the general configurations of the circuits. ・ 内部接続図はイメージ図です。
Package Lineup /
パッケージラインアップ
SM6
2.9 2.8 1.6(mm)
Radio-Frequency Bipolar Small-Signal Transistors /
高周波バイポーラ小信号トランジスタ
Radio-Frequency Bipolar Transistors /
高周波バイポーラトランジスタ
Part Number
Package
Applications
Absolute Maximum Ratings (Ta = 25
℃)
Marking
(1)TO-92
Equivalent Product
Remarks
V
CEO(V)
I
C(mA)
P
C(mW)
T
j(
℃)
2SC5064
S-MINI
VHF/UHF-band low-noise amps 12 30 150 125 MA£ ̶ fT = 7 GHz
2SC5084
2.9
2.5 1.5
(mm)
VHF/UHF-band low-noise amps 12 80 150 125 MC£ ̶ fT = 7 GHz
2SC5087
SMQ
VHF/UHF-band low-noise amps 12 80 150 125 C£ ̶ fT = 7 GHz
2.9
2.9 1.5
(mm)
2SC5087 R
VHF/UHF-band low-noise amps 12 80 150 125 ZP ̶ fT = 8 GHz2SC5065
USM VHF/UHF-band low-noise amps 12 30 100 125 MA£ ̶ fT = 7 GHz2SC5085
2.02.1 1.25
(mm)
VHF/UHF-band low-noise amps 12 80 100 125 MC£ ̶ fT = 7 GHz
2SC5095
VHF/UHF-band low-noise amps 10 15 100 125 ME£ ̶ fT = 10 GHz2SC5107
VHF/UHF-band oscillators 10 30 100 125 MF£ ̶ fT = 6 GHzMT3S16 U
UHF-band low-voltage oscillators and amps 5 60 100 125 T4 ̶ fT = 4 GHzMT4S03 BU
USQ
2.0
2.1 1.25
(mm)
VHF/UHF-band low-noise amps 5 40 175 (3) 150 MR ̶ fT = 12 GHz
MT4S24 U
VHF/UHF-band low-noise amps 5 50 175 (3) 150 R8 ̶ fT = 14.5 GHz2SC4915
SSM FM-band radio-frequency amps 30 20 100 125 Q£ 2SC1923 fT = 550 MHz2SC5066
1.6
1.6 0.8
(mm)
VHF/UHF-band low-noise amps 12 30 100 125 M1/M2 ̶ fT = 7 GHz
2SC5086
VHF/UHF-band low-noise amps 12 80 100 125 M5/M6 ̶ fT = 7 GHzMT3S20 TU
UFM
2.0
2.1 1.7
(mm)
VHF/UHF-band low-noise amps,
low-distortion amps 12 80 900 (3) 150 MU ̶ fT = 7 GHz
MT3S19 R
SOT-23F
VHF/UHF-band low-noise amps,
low-distortion amps 6 80 320 (2) 150 T6 ̶ fT = 13.5 GHz
2.9
2.5 1.8
(mm)
MT3S20 R
VHF/UHF-band low-noise amps, low-distortion amps 12 80 320 (2) 150 MU ̶ fT = 7.5 GHzMT3S20 P
Pw-Mini
4.6
4.2 2.5
(mm)
VHF/UHF-band low-noise amps,
low-distortion amps 12 80 1800 (3) 150 MU ̶ fT = 7 GHz
Note (1): £ in the Marking column is replaced by one of the following letters according to the hFE classification: R: Rank R, O: Rank O, Y: Rank Y / 現品表示欄の £ 内には、hFE分類が入ります。(R ランク→ R、O ランク→ O、Y ランク→ Y)
(2): When mounted on a glass-epoxy board / 基板実装時 (3): When mounted on a ceramic board / セラミック基板実装時
SiGe HBTs / SiGe HBT
Part Number
Package
Applications
Absolute Maximum Ratings (Ta = 25
℃)
Marking
Remarks
V
CEO(V)
I
C(mA)
P
C(mW)
T
j(
℃)
MT4S300 U
USQ
UHF/SHF-band low-noise amps 4 50 100 150 P3 fhigh ESD immunityT = 26.5 GHz,
MT4S301 U
2.0
2.1 1.25
(mm)
UHF/SHF-band low-noise amps 4 35 100 150 P4 fhigh ESD immunityT = 27.5 GHz,
MT3S111
S-MINI
VHF/UHF-band low-noise amps,
low-distortion amps 6 100 700 (1) 150 R5 fT = 11.5 GHz
2.9
2.5 1.5
(mm)
MT3S113
VHF/UHF-band low-noise amps, low-distortion amps 5.3 100 800 (1) 150 R7 fT = 12.5 GHzMT3S111 TU
UFM
VHF/UHF-band low-noise amps, low-distortion amps 6 100 800 (1) 150 R5 fT = 10 GHz 2.0 2.1 1.7 (mm)
MT3S113 TU
5.3 100 900 (1) 150 R7 fT = 11.2 GHzMT3S111 P
Pw-MiniVHF/UHF-band low-noise amps, low-distortion amps 6 100 1000 (1) 150 R5 fT = 8 GHz 4.6 4.2 2.5 (mm)