࣡ࣖ᧿㐣⏝࢙࢘ࢵࢺ࢚ࢵࢳࣥࢢࡼࡿࢩࣜࢥࣥࣥࢦࢵࢺࡢ
ษ᩿ࡢᇶ♏ⓗ᳨ウ
㇂ Ὀᘯ
1)㸪ᙇ Ᏹ
1)㸪ᮧ⏣㡰
2) ᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹A feasibility study for the application for slicing Si ingots using a wet etching
assisted by wire-friction
Yasuhiro TANI
1), Yu ZHANG
1)and
Junji MURATA
2)
Silicon (Si) wafers for electronic or photovoltaic devices are fabricated by slicing a Si ingot using mechanical slicing with a diamond wire. Recently, the slicing method without generating damage on Si surface has been strongly required because of the increasing demand of ultra-thin Si wafers. In this study, we have developed a novel machining method for Si grooving based on a wet chemical etching. In this method, Si was processed by the chemical etching in HNO3 and HF mixture combined with an abrasion effect of metallic wires that contains no abrasives. The extremely
low kerf loss with approx. 100 ȝm was achieved by optimizing the composition of etchant. SEM observation showed that Si surfaces processed by the proposed method had no crack and tool mark contrary to the mechanical slicing. Furthermore, Raman microscopy exhibited that the proposed method generated no disordered layer on Si surfaces, whereas the mechanical slicing caused amorphous layers. Surface roughness was improved by adding CH3COOH to the
etchant.
Key Words : Silicon, Etching, Slicing, Mixed acid, Kerf loss
E-mail㸸zhangyu@fc.ritsumei.ac.jp (Y. Zhang)
᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹᧹
1)
❧㤋Ꮫ⌮ᕤᏛ㒊ᶵᲔᕤᏛ⛉
2)
㏆␥Ꮫ⌮ᕤᏛ㒊ᶵᲔᕤᏛ⛉
1)
Department of Mechanical Engineering, Ritsumeikan University,
Kusatsu, Shiga, 525-8577, Japan
2)
Department of Mechanical Engineering, Kinki University,
⥴ ゝ ࢚ࢿࣝࢠ࣮ࡸᆅ⌫⎔ቃᑐࡍࡿ㛵ᚰࡀ㧗ࡲࡿ࡞㸪ኴ㝧㟁ụࡣ⏕ྍ⬟࡞ࢡ࣮࢚ࣜࣥࢿࣝࢠ࣮ࡢ୍ࡘࡋ࡚㟂 せࡀቑຍࡋ࡚࠸ࡿ㸬ኴ㝧㟁ụࡢࡉࡽ࡞ࡿᬑཬ⋡ࡢቑຍࡣ㸪ኴ㝧㟁ụࣃࢿࣝࡢࢥࢫࢺࡢపῶࡀ㔜せ࡞ࡿ㸬ኴ㝧 㟁ụࣃࢿࣝࡣࢩࣜࢥࣥ㸦Si㸧࢙࣮࢘ࣁࢆ⏝࠸࡚〇㐀ࡉࢀࡿ㸬ኴ㝧㟁ụࣃࢿࣝయࡢࢥࢫࢺࡢ࠺ࡕ㸪Si ࢙࣮࢘ࣁࡢ ᮦᩱࢥࢫࢺࡸ〇㐀ࢥࢫࢺࡀ༨ࡵࡿྜࡣᑡ࡞ࡃ࡞࠸㸬Si ࢙࣮࢘ࣁࡣࣥࢦࢵࢺ㸦⤖ᬗሢ㸧ࡽⷧࡃษฟࡋ࡚〇㐀 ࡉࢀࡿࡓࡵ㸪ࣥࢦࢵࢺࡽᮦᩱࡢ↓㥏ࢆᑡ࡞ࡃ㸪ࡼࡾከࡃࡢᇶᯈࢆษࡾฟࡍࡇࡀపࢥࢫࢺࡢ㘽࡞ࡿ㸬Si ࣥࢦࢵࢺࡢษ᩿ࡣ㸪࣡ࣖᕤලࢆ⏝࠸ࡓ࣐ࣝࢳ࣡ࣖࡼࡿຍᕤࡀ⏝࠸ࡽࢀ࡚࠸ࡿ㸬ᚑ᮶࡛ࡣ㸪◒⢏ࢆᠱ⃮ ࡋࡓࢫ࣮ࣛࣜࢆࣆࣀ⥺ᕤල౪⤥ࡋษ᩿ࢆ⾜࠺㐟㞳◒⢏ษ᩿᪉ᘧ (ㄶゼ㒊㸪2008) ࡀ⏝࠸ࡽࢀ࡚࠸ࡓࡀ㸪ษ ᩿⬟⋡ࡢྥୖࡸసᴗ⎔ቃࡢᨵၿ➼ࡢࡓࡵ㸪ࢲࣖࣔࣥࢻ◒⢏ࢆ࣡ࣖ╔ࡉࡏࡓࢲࣖࣔࣥࢻ࣡ࣖࡼࡿᅛ ᐃ◒⢏ษ᩿ (༓ⴥ㸪2003) ࡀᛴ㏿ᬑཬࢆఙࡤࡋ࡚࠸ࡿ㸬ࡋࡋ㸪ࢲࣖࣔࣥࢻ࣡ࣖࡼࡿษ᩿࡛ࡣ㸪ษฟ ࡋࡓ Si ࢙࣮࢘ࣁ⾲㠃ࢲ࣓࣮ࢪࡀⓎ⏕ࡍࡿࡇࡸ㸪ษ᩿⁁ᖜ㸦࣮࢝ࣇࣟࢫ㸧ࡢపῶ㝈⏺ࡀ࠶ࡿ࡞ࡢၥ㢟ࡀ࠶ ࡿ㸬 ࡇࡢࡼ࠺࡞⫼ᬒࡢࡶ㸪ᶵᲔຍᕤࡼࡽ࡞࠸᪂ࡋ࠸ Si ࡢษ᩿ᢏ⾡ࡋ࡚㸪ᨺ㟁ຍᕤ (Ᏹ㔝㸪2009) ࡸ㟁ゎຍ ᕤ (Lee, et al., 2011) 㸪ࣉࣛࢬ࣐࢚ࢵࢳࣥࢢ (᳃㸪2001) ࡞ࡢຍᕤᢏ⾡ࡢ㐺⏝ࡀ᳨ウࡉࢀ࡚࠸ࡿ㸬ࡇࢀࡽࡢ᪉ ἲ࡛ࡣ㸪Si ࢙࣮࢘ࣁᶵᲔⓗࢲ࣓࣮ࢪࢆⓎ⏕ࡉࡏࡎษ᩿ࡀྍ⬟࡛࠶ࡿࡀ㸪ຍᕤ㏿ᗘࡸ࣮࢝ࣇࣟࢫ㸪ຍᕤࢥࢫࢺ ➼ၥ㢟ࡀ࠶ࡾ㸪ᚑ᮶ࡢ◒⢏ຍᕤࡼࡿษ᩿ࢆ௦᭰ࡍࡿࡣ⮳ࡗ࡚࠸࡞࠸㸬ࡑࡇ࡛㸪➹⪅ࡽࡣ㸪࢙࢘ࢵࢺ࢚ࢵࢳ ࣥࢢࢆ⏝ࡋࡓ᪂ࡋ࠸ษ᩿ᢏ⾡࡛࠶ࡿࠕ࣡ࣖ᧿㐣⏝࢙࢘ࢵࢺ࢚ࢵࢳࣥࢢࠖࡢ㛤Ⓨࢆ⾜ࡗ࡚࠸ࡿ㸬ࡇࡢຍᕤᢏ ⾡ࡣ㸪࢚ࢵࢳࣥࢢᾮ㸦࢚ࢵࢳࣕࣥࢺ㸧୰࡛㉮⾜ࡍࡿ㔠ᒓ࣡ࣖࡼࡾ㸪Si ࢆ᧿㐣ࡍࡿࡇ࡛Ꮫⓗ࡞స⏝ࢆయ ࡋ࡚ຍᕤࢆ⾜࠺ࡇࢆ≉ᚩࡍࡿ㸬ᮏሗ࡛ࡣ㸪㛤Ⓨࡋࡓຍᕤᢏ⾡ࡼࡾ Si ᑐࡋ࡚῝⁁ຍᕤࢆࡋ㸪ຍᕤᶵᵓ ࡸ࢚ࢵࢳࣕࣥࢺ⤌ᡂ㸪ຍᕤ᮲௳ࡀຍᕤ≉ᛶ࠼ࡿᙳ㡪ࡸษ᩿㠃ရ㉁ࡘ࠸࡚ㄪᰝࢆ⾜࠸㸪Si ࣥࢦࢵࢺษ᩿ ࡢ㐺⏝ྍ⬟ᛶࡘ࠸᳨࡚ウࢆ⾜ࡗࡓ㸬 ᪂つຍᕤᢏ⾡ࡢᴫせຍᕤせ⣲ࡢ㑅ᐃ ࣭ ࣡ࣖ᧿㐣⏝࢙࢘ࢵࢺ࢚ࢵࢳࣥࢢࡢᴫせ ࢙࢘ࢵࢺ࢚ࢵࢳࣥࢢࡣ㏻ᖖ➼᪉ᛶ࢚ࢵࢳࣥࢢ࡞ࡿࡓࡵ㸪Si ⾲㠃࣐ࢫࢡࢆࡋ࡚ࡶࢧࢻ࢚ࢵࢳࡀ⏕ࡌࡿ㸬 ࡑࡢࡓࡵ㸪Si ࢙࣮࢘ࣁࡢษฟࡋ࡛ᚲせ࡞ࡿࢫ࣌ࢡࢺẚࡢ㧗࠸ᚤ⣽⁁ࢆຍᕤࡍࡿࡇࡣ㏻ᖖ࡛ࡣᅔ㞴࡛࠶ࡿ㸬
ⴭ⪅ࡽࡣ㸪⁁ࡢᖜ᪉ྥࡢ࢚ࢵࢳࣥࢢ㏿ᗘࢆᢚไࡋ㸪῝ࡉ᪉ྥࡢ࢚ࢵࢳࣥࢢࢆಁ㐍ࡍࡿࡇࡀ࡛ࡁࢀࡤ␗᪉ᛶࡢຍ ᕤࡀᐇ⌧࡛ࡁࡿ⪃࠼ࡓ㸬ࡑࡇ࡛㸪ᅗ 1 ♧ࡍࡼ࠺㸪Si ࣥࢦࢵࢺ࢚ࢵࢳࣕࣥࢺࢆ౪⤥ࡋ㸪㉮⾜ࡍࡿ㔠ᒓ࣡ ࣖࡼࡾࣥࢦࢵࢺࢆ᧿㐣ࡍࡿຍᕤ᪉ἲࢆ╔ࡋࡓ㸬Si ࣥࢦࢵࢺ㔠ᒓ࣡ࣖࡢ᧿㐣Ⅼ࠾࠸࡚㸪ᦶ᧿⇕ࡢ Ⓨ⏕ࡸ᪂㩭࡞࢚ࢵࢳࣕࣥࢺࡢᘬࡁ㎸ࡳ࡞ࡼࡗ࡚῝ࡉ᪉ྥࡢ࢚ࢵࢳࣥࢢ㏿ᗘࡢྥୖࢆᅗࡗࡓ㸬୍᪉㸪࢚ࢵࢳ ࣕࣥࢺ⤌ᡂࡢ᭱㐺ࡼࡾ㸪⁁ᖜ᪉ྥࡢ࢚ࢵࢳࣥࢢࡢᢚไࢆ᳨ウࡋࡓ㸬ࡇࡢࡼ࠺࡞ຍᕤ᪉ἲࡀᐇ⌧࡛ࡁࢀࡤ㸪 Ꮫⓗస⏝ᇶ࡙ࡃᮦᩱ㝖ཤ࡛࠶ࡿࡓࡵ㸪ࢲࣖࣔࣥࢻ࣡ࣖษ᩿࡛ၥ㢟࡞ࡿษ᩿㠃ࡢᶵᲔⓗࢲ࣓࣮ࢪࢆⓎ⏕ ࡉࡏࡎຍᕤࡀ࡛ࡁࡿ㸬ᶵᲔⓗࢲ࣓࣮ࢪࡣ࢙࣮࢘ࣁࡢᢠᢡᙉᗘࡢపୗ⧅ࡀࡿࡓࡵ㸪ⷧ⫗࢙࣮࢘ࣁࡢษฟࡋ࠾ ࠸࡚Ṍ␃ࡲࡾࡀᝏࡍࡿ㸬୍᪉㸪࣡ࣖ᧿㐣⏝࢙࢘ࢵࢺ࢚ࢵࢳࣥࢢ࡛ࡣ࢙࣮࢘ࣁࡢࢲ࣓࣮ࢪࡢⓎ⏕ࡀ࡞ࡃᴟ ࢙࣮ⷧ࢘ࣁࡢษฟࡋࡶぢ㎸ࡵࡿ㸬ࡉࡽ㸪ࢲࣖࣔࣥࢻ࣡ࣖษ᩿ẚ㍑ࡋ࡚㸪ᕤල࣡ࣖࡢ㈇Ⲵࢆపῶ࡛ࡁ ࡿࡓࡵ㸪⣽⥺࣡ࣖࡢ⏝ࡼࡿ࣮࢝ࣇࣟࢫࡢపῶࡀྍ⬟࡞ࡿ࡞ࡢⅬࡀᣲࡆࡽࢀࡿ㸬 ࣭ ࢚ࢵࢳࣕࣥࢺ࣭ຍᕤ⨨࣭ᕤල࣡ࣖࡢ㑅ᐃ
Si ࡢ࢙࢘ࢵࢺ࢚ࢵࢳࣥࢢ࡛ࡣ㸪KOH ࡸ TMAH ࡞ࡢࣝ࢝ࣜ⁐ᾮ (Sato, et al., 2000) ࡸ㸪◪㓟ࣇࢵỈ⣲㓟 㸦ࣇࢵ㓟㸧ࡢΰ㓟࡛࠶ࡿࣇࢵ◪㓟 (Steinner, et al., 2005) ࡀከ⏝ࡉࢀ࡚࠸ࡿ㸬ࣝ࢝ࣜ⁐ᾮࡼࡿ࢚ࢵࢳࣥࢢ࡛ࡣ㸪 ࢚ࢵࢳࣥࢢ㏿ᗘࡢ⤖ᬗ᪉౫Ꮡᛶࡀ㧗ࡃ㸪࢚ࢵࢳࣥࢢ㏿ᗘࡶప࠸㸬ࡑࢀᑐࡋ㸪ࣇࢵ◪㓟ࡣ⤖ᬗ᪉౫Ꮡᛶࡀᑠ ࡉࡃ㸪ᐇ⏝ⓗ࡞࢚ࢵࢳࣥࢢ㏿ᗘ㸦᭱ 800 m/min (Yoshikawa, et al., 2010) 㸧ࡀᚓࡽࢀࡿ㸬ࡲࡓ㸪ኴ㝧㟁ụ〇㐀ᕤ ⛬࠾ࡅࡿࢲ࣓࣮ࢪ㝖ཤࡢ࢚ࢵࢳࣕࣥࢺࡋ࡚ᐇ⦼ࡀ࠶ࡿࡇ࡞ࡽ㸪ᮏຍᕤᢏ⾡࠾ࡅࡿ࢚ࢵࢳࣕࣥࢺࡋ ࡚㑅ᢥࡋࡓ㸬ୖグࡢ᪂ࡋ࠸ຍᕤᢏ⾡ࡼࡿ Si ࡢษ᩿ຍᕤࡢྍ⬟ᛶࢆ᳨ドࡍࡿࡓࡵ㸪ᅗ 2 ♧ࡍࢩࣥࢢࣝ࣡ࣖຍ ᕤ⨨ࢆ㛤Ⓨࡋࡓ㸬ᕤල࣡ࣖࢆᕳࡁࡘࡅࡓ࣎ࣅࣥࢆ࣮ࣔࢱࡼࡾᅇ㌿ࡍࡿࡇ࡛࣡ࣖࢆ㉮⾜ࡉࡏ㸪ࣉ࣮࣮ࣜ ࢆࡋ࡚ᕤస≀⾲㠃ࢆ࣡ࣖࡀ᧿㐣ࡍࡿᶵᵓ࡛࠶ࡿ㸬ࣇࢵ◪㓟ࡢ⪏⸆ရᛶࢆ⪃៖ࡋ࡚㸪᥋ᾮ㒊ࡣᇶᮏⓗ PVC 㸦Polyvinyl chloride㸧ࡲࡓࡣ PEEK㸦poly ether ether ketone㸧࡛ᵓᡂࡉࢀ࡚࠸ࡿ㸬࢚ࢵࢳࣕࣥࢺࡣᕤస≀ୖ᪉ࡽ ୗࡍࡿࡇ࡛౪⤥ࡋ࡚࠸ࡿ㸬ᕤල࣡ࣖࡣ㸪⭉㣗ᛶࡢᴟࡵ࡚㧗࠸ࣇࢵ◪㓟⪏㣗ᛶࢆ᭷ࡍࡿࡇࡀせồࡉࢀࡿ㸬 ࡲࡓ㸪㧗㏿࡛㉮⾜ࡋ࡞ࡀࡽ Si ࣥࢦࢵࢺࢆ᧿㐣ࡍࡿࡇࡽ㸪㧗࠸ᘬᙇᙉᗘࡀᚲせ࡞ࡿ㸬ᵝࠎ࡞㸪ྜ㔠࣡ࣖ ࡽ⪏㣗ᛶࡢ㧗࠸ᮦᩱࢆ㑅ᢥࡋ㸪ࣇࢵ◪㓟ᑐࡍࡿ⭉㣗㔞ࢆホ౯ࡋࡓ㸬⾲ 1 ♧ࡍࡼ࠺㸪ࣇࢵ◪㓟㸦◪㓟 40wt%㸪 ࣇࢵ㓟 4wt%㸧ᾐₕᚋࡢ࣡ࣖࡢ┤ᚄῶᑡ㔞ࢆィ ࡋࡓ⤖ᯝ㸪ࢽࢡ࣒ࣟ㸦NCHW1㸧୪ࡧࢫࢸࣥࣞࢫ㸦SUS316L㸧 ࣡ࣖࡀ㧗࠸⪏㣗ᛶࢆ♧ࡋࡓࡇࡽ㸪ࡇࢀࡽࢆ࣡ࣖᕤලࡋ࡚㑅ᢥࡋࡓ㸬
Table 1 Corrosive and mechanical properties of wire
Material Reduction of diameter (mm)ͤ Tensile strength ×102 (N/mm2)
80Ni-20Cr 0 0.7
Inconel® 0.04 0.6
HASTELLOY® 0.04 0.9
Austenitic stainless steel 0 2.7
ͤafter 2h immersion of HNO
3 (40 wt%) and HF(4wt%) solution
Table 2 Experimental conditions
Workpiece Mono- and Poly-Si ingot (10 × 10 × 10 mm3)
Wire Ni-Cr (ࢥ160 m), Stainless steel (ࢥ100 m) Wire running speed, V Max. 200 m/min
Wire tension, T 5 N
ຍᕤ㏿ᗘ࠾ࡼࡧ࣮࢝ࣇࣟࢫࡢホ౯ ࣭ ຍᕤ᮲௳ࡀຍᕤ≉ᛶ࠼ࡿᙳ㡪 ⾲ 2 ♧ࡍຍᕤ᮲௳ࢆᇶᮏࡋ㸪ຍᕤ᮲௳ࡀຍᕤ≉ᛶ࠼ࡿᙳ㡪ࢆホ౯ࡋࡓ㸬࡞࠾㸪ຍᕤᐇ㦂ࡣ࡚ᐊ ୗ࡛ ⾜ࡗࡓ㸬ࡲࡎ㸪࢚ࢵࢳࣕࣥࢺ⤌ᡂࡀຍᕤ≉ᛶ࠼ࡿᙳ㡪ࢆㄪࡓࡶࡢࡀᅗ 3 ࡛࠶ࡿ㸬ᅗ 3(a)ࡣࣇࢵ㓟⃰ᗘࢆᅛ ᐃࡋ㸪◪㓟⃰ᗘࡢࡳࢆኚࡉࡏࡓ㝿ࡢຍᕤ≉ᛶ࡛࠶ࡾ㸪ᅗ 3(b)ࡣ◪㓟⃰ᗘࢆᅛᐃࡋ㸪ࣇࢵ㓟⃰ᗘࡢࡳࢆኚࡉࡏ ࡓ㝿ࡢຍᕤ≉ᛶࢆ♧ࡋ࡚࠸ࡿ㸬ᅗ 3(a)♧ࡍࡼ࠺㸪◪㓟⃰ᗘࢆቑຍࡉࡏࡿຍᕤ㏿ᗘࡀྥୖࡋࡓࡀ㸪࣮࢝ࣇ ࣟࢫࡣ◪㓟⃰ᗘᑐࡋ࡚ኚࡏࡎࡰ୍ᐃࡢ⣙ 170 m ࡛࠶ࡗࡓ㸬୍᪉㸪ᅗ 3(b)♧ࡍࡼ࠺㸪ࣇࢵ㓟⃰ᗘࢆቑ ຍࡉࡏࡿ㸪ຍᕤ㏿ᗘࡔࡅ࡛࡞ࡃ࣮࢝ࣇࣟࢫࡶቑຍࡍࡿࡇࡀࢃࡗࡓ㸬 ḟ㸪࣡ࣖࡢ㉮⾜㏿ᗘࡀຍᕤ㏿ᗘ࠼ࡿᙳ㡪ࢆㄪࡓࡶࡢࡀᅗ 4 ࡛࠶ࡿ㸬࣡ࣖ㉮⾜㏿ᗘࡢቑຍඹ㸪 ຍᕤ㏿ᗘࡶࡰẚⓗቑຍࡍࡿࡇࡀࢃࡿ㸬࣡ࣖࡢ㉮⾜㏿ᗘࢆቑຍࡉࡏࡿ㸪Si ࡢ᧿㐣Ⅼ࠾ࡅࡿᦶ᧿⇕ ࡀቑຍࡍࡿ⪃࠼ࡽࢀࡿ㸬ᅗ 5 ♧ࡍࡼ࠺㸪Si ࢙࣮࢘ࣁࢆࣇࢵ◪㓟ᾐₕࡉࡏࡓ㝿ࡢ࢚ࢵࢳࣥࢢ㏿ᗘࡣ࢚ࢵࢳ ࣕࣥࢺࡢຍ⇕ࡼࡗ࡚ಁ㐍ࡉࢀࡿ㸬ᚑࡗ࡚㸪࣡ࣖ㉮⾜㏿ᗘࡢቑຍక࠺ᦶ᧿⇕ࡢቑຍࡀ㸪ຍᕤ㏿ᗘྥୖࡢ୍ࡘ ࡢせᅉ࡛࠶ࢁ࠺㸬ࡲࡓ㸪࣡ࣖ㉮⾜㏿ᗘࡢቑຍࡀ᧿㐣Ⅼ࠾ࡅࡿᛂ⏕ᡂ≀ࡸ Si ⾲㠃ࡢാែ⭷ࡢ㝖ཤࢆಁ㐍ࡉ ࡏࡓࡇ࡞ࡶせᅉࡋ࡚⪃࠼ࡽࢀࡿ㸬
Fig. 3 Material removal rate and kerf loss of Si as a function of (a) HNO3 and (b) HF concentration
Fig. 4 Material removal rate and kerf loss of Si Fig. 5 Dependence of etchant temperature on etching as a function of wire running speed rate of Si (100) wafer surface
࣭ ␗᪉ᛶ࢚ࢵࢳࣥࢢࡢ࣓࢝ࢽࢬ࣒㛵ࡍࡿ⪃ᐹ ୖグࡢ⤖ᯝࡽ㸪࢚ࢵࢳࣕࣥࢺ⤌ᡂࢆ◪㓟⃰ᗘ 40 wt%㸪ࣇࢵ㓟⃰ᗘ 4 wt%Ỵᐃࡋ㸪⁁ຍᕤࢆࡋࡓ Si ࡢຍᕤ ගᏛ㢧ᚤ㙾ീࢆᅗ 6 ♧ࡍ㸬ᅗ 6(a)ࡣ┤ᚄ 160 m ࡢࢽࢡ࣒ࣟ࣡ࣖࢆ⏝࠸ࡓຍᕤ⁁࡛࠶ࡾ㸪࣮࢝ࣇࣟࢫࡣ⣙ 175 m ࡛࠶ࡗࡓ㸬࣮࢝ࣇࣟࢫࡣຍᕤ⁁యࢃࡓࡗ࡚ࡰ୍ᐃ࡛࠶ࡾ㸪⁁ࡢධཱྀ㒊࠾࠸࡚ࡶᗈࡀࡿࡇ࡞ࡃ㸪㧗 ࠸ࢫ࣌ࢡࢺẚࢆ᭷ࡍࡿࡇࡀࢃࡿ㸬┤ᚄ 100 m ࡢࢽࢡ࣒ࣟ⥺ࢆ⏝࠸ࡓሙྜ㸪ຍᕤ୰᩿⥺ࡀ⏕ࡌࡓࡓࡵ㸪 ࡼࡾᘬᙇᙉᗘࡢ㧗࠸ࢫࢸࣥࣞࢫ࣡ࣖࢆ⏝࠸࡚ຍᕤࢆ⾜ࡗࡓ㸬ᅗ 6(b)♧ࡍࡼ࠺㸪ࡇࡕࡽࡢሙྜࡶ࣮࢝ࣇࣟࢫ ࡣ 109 m ࡞ࡾ㸪࣡ࣖ┤ᚄࡼࡾ 10 m ⛬ᗘࡁ࠸࣮࢝ࣇࣟࢫࡢຍᕤ⁁ࡀᚓࡽࢀࡓ㸬ୖグࡢࡼ࠺㸪୍⯡ⓗ ࡣ➼᪉ᛶ࢚ࢵࢳࣥࢢ࡞ࡿࣇࢵ◪㓟ࢆ⏝࠸ࡓࡶ㛵ࢃࡽࡎ㸪㛤Ⓨࡋࡓຍᕤᢏ⾡࠾࠸࡚ࡣ␗᪉ᛶ࢚ࢵࢳࣥࢢ࡞ ࡾ㸪㧗࠸ࢫ࣌ࢡࢺẚࡢຍᕤࡀᐇ⌧ࡋࡓ㸬ࡇࡢせᅉࡘ࠸࡚௨ୗ⪃ᐹࡍࡿ㸬ࣇࢵ◪㓟ࡼࡿ Si ࡢ࢚ࢵࢳࣥࢢࡣ㸪 ୗᘧ♧ࡍࡼ࠺㸪◪㓟ࡼࡿ Si ⾲㠃ࡢ㓟㸦ᘧ(1)㸧ࣇࢵ㓟ࡼࡿ㓟⭷ࡢ⁐ゎ㸦ᘧ(2)㸧ࡼࡾᛂࡀ㐍 ⾜ࡍࡿ (Steinnert, et al., 2005) 㸬
Si + 4HNO3 Ѝ 3SiO2 + 4NO + 2H2O (1)
SiO2 + 6HF Ѝ H2SiF6 + 2H2O (2) ◪㓟⃰ᗘࡀ㧗ࡃ㸪ࣇࢵ㓟⃰ᗘࡀప࠸࢚ࢵࢳࣕࣥࢺ㸦ᅗ 3(a)㸧࡛ࡣ㸪Si ࡢ㓟㏿ᗘࡣ༑ศࡁ࠸ࡀ㸪ࣇࢵ㓟ࡼ ࡿ㓟⭷ࡢ⁐ゎ㏿ᗘࡀᑠࡉࡃ㸪ࡇࢀࡀᚊ㏿㐣⛬࡞ࡿ㸬ࡑࡢࡓࡵ㸪࣡ࣖ᧿㐣㒊௨እࡢ࢚ࢵࢳࣥࢢ㏿ᗘ㸦ࡘࡲࡾ ⁁ᖜ᪉ྥࡢ࢚ࢵࢳࣥࢢ㏿ᗘ㸧ࡣᑠࡉࡃ࡞ࡿ㸬୍᪉㸪࣡ࣖ Si ࡢ᧿㐣Ⅼ࠾࠸࡚ࡣ㸪Si ⾲㠃⏕ᡂࡋࡓ㓟⭷ࡀ ࣡ࣖࡢ᧿㐣స⏝ࡼࡾ㝖ཤࡉࢀࡿࡇࡀணࡉࢀࡿ㸬ࡲࡓ㸪๓㏙ࡋࡓࡼ࠺࣡ࣖࡢ᧿㐣Ⅼ࡛ࡣᦶ᧿⇕ࡀⓎ⏕ ࡋ㸪㓟⭷ࡢ⁐ゎ㏿ᗘࡀቑຍࡍࡿ⪃࠼ࡽࢀࡿ㸬ࡉࡽ㸪ຍᕤⅬ࡛ࡣ࢚ࢵࢳࣕࣥࢺࡢᘬࡁ㎸ࡳࡀಁࡉࢀࡿ㸬ᅗ 5 ࡛ࡣᾮ ࢆᆒ୍ࡍࡿࡓࡵ࢚ࢵࢳࣕࣥࢺࢆ᧠ᢾࡋ㸪࢚ࢵࢳࣥࢢ࣮ࣞࢺࡢホ౯ࢆ⾜ࡗࡓࡀ㸪ྠࡌ⸆ᾮ⤌ᡂ࡛ᐊ ࡘ᧠ᢾࢆ⾜ࢃ࡞࠸᮲௳࡛ࡣ㸪ࢩࣜࢥࣥ⾲㠃ࡢ࢚ࢵࢳࣥࢢࡀ☜ㄆࡉࢀ࡞ࡗࡓ㸬ࡇࢀࡣ㸪ࢩࣜࢥࣥ⾲㠃࡛⏕ᡂࡍࡿ NO ࢞ࢫࡸ H2SiF6࡞ࡢᛂ⏕ᡂ≀ࡀ࢚ࢵࢳࣥࢢࢆጉࡆࡿࡓࡵ࡛࠶ࡿ (ぢ㸪2012) 㸬࣡ࣖࡢ㏆ഐ࡛ࡣ㸪࣡ ࣖࡢ㐠ືࡼࡾ࢚ࢵࢳࣕࣥࢺࡀ᧠ᢾࡉࢀࡿࡢᑐࡋ㸪࣡ࣖࡽ㐲ࡊࡗࡓ㒊ศ࡛ࡣ࢚ࢵࢳࣕࣥࢺࡀ␃ࡍࡿ ࡓࡵ㸪ᛂ⏕ᡂ≀ࡀ㝖ཤࡉࢀࡎ࢚ࢵࢳࣥࢢ㏿ᗘࡀⴭࡋࡃపୗࡋ࡚࠸ࡿࡶࡢ⪃࠼ࡽࢀࡿ㸬ࡇࡢࡓࡵ㸪ᮏᢏ⾡࠾ ࠸࡚ࡣ㸪ຍᕤ⁁ࡢᖜ᪉ྥᑐࡍࡿ࢚ࢵࢳࣥࢢ㏿ᗘࡣ↓ど࡛ࡁࡿᑠࡉࡃ㸪ࡑࢀᑐࡋ࡚῝ࡉ᪉ྥ࢚ࢵࢳࣥࢢ㏿ ᗘࡀ༑ศࡁ࠸ࡓࡵ㸪␗᪉ⓗ࡞࢚ࢵࢳࣥࢢࡀᐇ⌧ࡋࡓᛮࢃࢀࡿ㸬ࢩࣜࢥࣥࣥࢦࢵࢺࡢࢧࢬࡀࡁࡃ࡞ࡗ ࡓሙྜ㸪ຍᕤ㛫ࡶ㛗㛫࡞ࡿࡀ㸪ୖグࡢ⌮⏤ࡽຍᕤ㛫ࡢቑຍక࠺⁁ᖜࡢቑࡣᴟࡵ࡚ᑠࡉ࠸⪃࠼ࡽ ࢀࡿ㸬୍᪉㸪ࣇࢵ㓟⃰ᗘࢆ㧗ࡵࡿ㸪㓟⭷ࡢ㝖ཤ㏿ᗘࡀ㧗ࡲࡾ㸪࣡ࣖ᧿㐣Ⅼ௨እࡢ࢚ࢵࢳࣥࢢ㏿ᗘࡶࡁࡃ ࡞ࡗࡓ⤖ᯝ㸪࣮࢝ࣇࣟࢫࡢቑ⧅ࡀࡗࡓ⪃࠼ࡽࢀࡿ㸦ᅗ 3(b)㸧㸬
࣭ ከ⤖ᬗ 6L ࡢຍᕤ≉ᛶ ኴ㝧㟁ụࣃࢿࣝࡣ㸪༢⤖ᬗ Si ࡼࡾࡶᏳ౯࡛࠶ࡿࡇࡽ㸪ከ⤖ᬗ Si ࢙࣮࢘ࣁࡶ⏝ࡉࢀ࡚࠸ࡿ㸬༢⤖ᬗ Si ࡣ␗࡞ࡾ㸪ከ⤖ᬗ Si ࡣࣥࢦࢵࢺ୰␗࡞ࡿ⤖ᬗ᪉ࢆᣢࡘ⤖ᬗ⢏ࡀᏑᅾࡍࡿࡇࡽ㸪Ꮫⓗ࡞ຍᕤ࡛ࡣ⤖ ᬗ⢏ẖຍᕤ≉ᛶࡀ␗࡞ࡿྍ⬟ᛶࡀ࠶ࡿ㸬ࡑࡇ࡛㸪ᮏຍᕤᢏ⾡࠾࠸࡚ከ⤖ᬗ Si ࡢຍᕤ≉ᛶࢆㄪࡓ㸬ᅗ 7 ♧ ࡍࡼ࠺㸪༢⤖ᬗከ⤖ᬗ Si ࢆྠ᮲௳࡛ຍᕤࡋࡓ⤖ᯝ㸪ࡰྠ➼ࡢຍᕤ㏿ᗘ࣮࢝ࣇࣟࢫࡀᚓࡽࢀࡓ㸬࢚ࢵࢳࣥ ࢢ㏿ᗘࡢ⤖ᬗ᪉౫Ꮡᛶࢆㄪࡿࡓࡵ㸪(111)㠃(100)㠃ࡢ Si ࢙࣮࢘ࣁࢆᾐₕࡉࡏࡓ㝿ࡢ࢚ࢵࢳࣥࢢ㏿ᗘࢆ ᐃ ࡋࡓ㸬ᅗ 8 ♧ࡍࡼ࠺㸪Ỉ㓟࣒࢝ࣜ࢘Ỉ⁐ᾮࡼࡿ࢚ࢵࢳࣥࢢ࡛ࡣ(111)㠃ẚ㍑ࡋ㸪(100)㠃࠾࠸࡚㠀ᖖ ࡁ࡞࢚ࢵࢳࣥࢢ㏿ᗘ࡛࠶ࡗࡓ㸬ࡑࢀᑐࡋࣇࢵ◪㓟࡛ࡣ(111)㠃(100)㠃࠾࠸࡚ࡰྠ➼ࡢ࢚ࢵࢳࣥࢢ㏿ᗘ࡛ ࠶ࡗࡓ㸬ࡑࡢࡓࡵ㸪ᮏຍᕤᢏ⾡࡛ࡣከ⤖ᬗ Si ࡢຍᕤ࠾࠸࡚ࡶ㸪༢⤖ᬗ Si ྠ➼ࡢຍᕤ≉ᛶࡀᚓࡿࡇࡀ࡛ࡁ ࡓ⪃࠼ࡽࢀࡿ㸬 ຍᕤ㠃ရ㉁ࡢホ౯ ࣭ ຍᕤࢲ࣓࣮ࢪ ࣡ࣖ᧿㐣⏝࢙࢘ࢵࢺ࢚ࢵࢳࣥࢢࡼࡾຍᕤࡋࡓ Si ࡢࢲ࣓࣮ࢪࢆホ౯ࡋ㸪ࢲࣖࣔࣥࢻ࣡ࣖຍᕤࡢẚ㍑ ࢆ⾜ࡗࡓ㸬ᅗ 9 ࡣࢲࣖࣔࣥࢻ࣡ࣖ࡞ࡽࡧᮏຍᕤᢏ⾡ࡼࡿ Si ࣥࢦࢵࢺࡢຍᕤ㠃ࢆほᐹࡋࡓ SEM ീ࡛࠶ ࡿ㸬ࢲࣖࣔࣥࢻ࣡ࣖࡼࡿຍᕤ㠃ࡣከᩘࡢࢡࣛࢵࢡࡀⓎ⏕ࡋ࡚࠸ࡿ㸪࣡ࣖ㉮⾜᪉ྥᖹ⾜ࢯ࣮࣐࣮ ࢡ㸦◊๐㸧ࡀぢࡽࢀࡿ㸬ࡑࢀᑐࡋ㸪ᮏᢏ⾡ࡼࡿຍᕤ㠃ࡣࢡࣛࢵࢡࡸࢯ࣮࣐࣮ࢡࡀᏑᅾࡋ࡞࠸➼᪉ⓗ࡞⾲㠃 ࡛࠶ࡿࡇࡀࢃࡿ㸬ࡼࡾヲ⣽ຍᕤ㠃ࡢࢲ࣓࣮ࢪࢆㄪᰝࡍࡿࡓࡵ㸪㉮ᰝᆺ࣐ࢡ࣐ࣟࣛࣥ㢧ᚤ㙾㸦RENISHAW㸪 Raman microscope Invia Reflex 532㸧ࡼࡿຍᕤ㠃ホ౯ࢆ⾜ࡗࡓ㸬Si ࡢ࣐ࣛࣥศග࠾࠸࡚ࡣ㸪Ἴᩘ 520 cm-1㏆
Fig. 7 Comparison of slicing characteristics Fig. 8 Comparison of the etching rate of Si (111) and between mono-Si and poly-Si (100) wafer surface immersed in HF-HNO3
mixture and KOH solution
⤖ᬗᛶ Si㸦c-Si㸧ࡢࢩ࣮ࣕࣉ࡞ࣆ࣮ࢡࡀ⌧ࢀ㸪㠀ᬗ㉁㸦ࣔࣝࣇࢫ㸧Si㸦a-Si㸧ࡣἼᩘ 400-500 cm-1ࣈ࣮ࣟ
ࢻ࡞ࣆ࣮ࢡࡋ࡚⌧ࢀࡿ (Zwick and Carles, 1993) 㸬ᅗ 10 ࡣຍᕤᚋࡢ Si ⾲㠃ࢆ࣐ࣛࣥ㢧ᚤ㙾ࡼࡾほᐹࡋ㸪⤖ᬗ ᛶ Si ࡢࣆ࣮ࢡ㸦Ἴᩘ 520 cm-1㸧ᙉᗘࢆ࣐ࢵࣆࣥࢢࡋࡓࡶࡢ࡛࠶ࡿ㸬ධᑕගࡣἼ㛗 532 nm ࡢ࣮ࣞࢨࢆᑐ≀ࣞࣥࢬ ࡼࡾ┤ᚄ⣙ 1 m 㞟ගࡋࡓࡶࡢ࡛࠶ࡾ㸪ࢧࣥࣉࣝࢫࢸ࣮ࢪࢆ 1 m ࣆࢵࢳ࡛㉮ᰝࡉࡏ㸪ࡑࢀࡒࢀࡢ⨨࡛ࡢࣛ ࣐ࣥࢫ࣌ࢡࢺࣝࢆྲྀᚓࡋࡓ㸬࡞࠾㸪ᅗ୰ࡢᤄධᅗࡣຍᕤ㠃ࡢྠ୍⟠ᡤࢆྍどග࡛ほᐹࡋࡓගᏛ㢧ᚤ㙾ീ࡛࠶ࡿ㸬 ᅗ 10(a)♧ࡍࢲࣖࣔࣥࢻ࣡ࣖຍᕤ㠃࡛ࡣ㸪ᙉᗘࡢࡤࡽࡘࡁࡀࡁࡃ㸪⤖ᬗᛶ Si ࡢࣆ࣮ࢡᙉᗘࡀప࠸㒊ศࡀ Ꮡᅾࡍࡿ㸬ྍどග㢧ᚤ㙾ീẚ㍑ࡍࡿ㸪ࢯ࣮࣐࣮ࢡ㒊ࡢᙉᗘࡀపࡃ㸪ࢡࣛࢵࢡ㒊ࡢᙉᗘࡀࡁ࠸ࡇࡀࢃࡿ㸬 ୍᪉㸪ᮏຍᕤᢏ⾡ࡼࡾຍᕤࡋࡓ⾲㠃㸦ᅗ 10(b)㸧ࡣ㸪⾲㠃ࡢพฝᑐᛂࡋ࡚ⱝᖸࡢᙉᗘࡤࡽࡘࡁࡀぢࡽࢀࡿࡶࡢ ࡢ㸪య㧗࠸⤖ᬗᛶ Si ࡢࣆ࣮ࢡᙉᗘࢆ♧ࡋࡓ㸬ᅗ 10 ࡢ࣐ࣛࣥ㢧ᚤ㙾ീ♧ࡋࡓ A Ⅼ㸪B Ⅼ㸦ࢲࣖࣔࣥࢻ࣡ ࣖຍᕤ㠃㸧㸪C Ⅼ㸦ᮏᢏ⾡ࡼࡿຍᕤ㠃㸧࠾ࡅࡿ࣐ࣛࣥࢫ࣌ࢡࢺࣝࢆ♧ࡋࡓࡶࡢࡀᅗ 11 ࡛࠶ࡿ㸬ࢲࣖࣔࣥ ࢻ࣡ࣖࡼࡿຍᕤ㠃ࡢࢡࣛࢵࢡ㒊㸦A Ⅼ㸧ࡣ㸪⤖ᬗᛶ Si ࡢࣆ࣮ࢡࡢࡳࡀ☜ㄆࡉࢀࡓࡀ㸪ࢯ࣮࣐࣮ࢡ㒊㸦B Ⅼ㸧 ࡛ࡣ⤖ᬗᛶ Si ຍ࠼㸪ࣔࣝࣇࢫ Si ࡢࣈ࣮ࣟࢻ࡞ࣆ࣮ࢡ࡛ᵓᡂࡉࢀ࡚࠸ࡿࡇࡀࢃࡗࡓ㸬ࢯ࣮࣐࣮ࢡࡢᏑ ᅾࡍࡿ Si ⾲㠃ࡢ┤ୗ࡛ࡣ㸪ࢲࣖࣔࣥࢻ◒⢏ࡢษ๐స⏝ࡼࡾ㸪⤖ᬗᵓ㐀ࡀ◚ቯࡉࢀ㸪ࣔࣝࣇࢫᒙࡀᙧᡂࡉ ࢀࡓ⪃࠼ࡽࢀࡿ㸬ࢡࣛࢵࢡ㒊࠾࠸࡚ࡣ㸪ࣔࣝࣇࢫᒙࡀࡂྲྀࡽࢀࡓࡓࡵ㸪⣲ᆅࡢ⤖ᬗᛶ Si ࡀ㟢ฟࡋࡓࡶ ࡢᛮࢃࢀࡿ㸬ࡇࡢࡼ࠺࡞ഴྥࡣࢲࣖࣔࣥࢻษ๐ࡋࡓ Si ⾲㠃ࡢ࣐ࣛࣥศᯒ࠾࠸࡚ࡶሗ࿌ࡉࢀ࡚࠸ࡿ (Yan, 2004) 㸬ࡑࢀᑐࡋ㸪ᮏᢏ⾡ࡼࡿຍᕤ㠃㸦C Ⅼ㸧ࡢ࣐ࣛࣥࢫ࣌ࢡࢺࣝࡣ⤖ᬗᛶ Si ࡢࣆ࣮ࢡࡢࡳࡀほᐹࡉࢀ࡚࠾ ࡾ㸪ࡘࡑࡢࣆ࣮ࢡ್༙ᖜࡶࢲࣖࣔࣥࢻ࣡ࣖࡼࡿຍᕤ㸦B Ⅼ㸧ẚ㍑ࡋ࡚ᑠࡉ࠸ࡇࡀࢃࡗࡓ㸬ୖグࡢ ࣐ࣛࣥศගࡼࡿホ౯ࡢ⤖ᯝ㸪ᮏຍᕤᢏ⾡ࡼࡿຍᕤ㠃ࡣࣔࣝࣇࢫᒙࡀᙧᡂࡉࢀ࡚࠾ࡽࡎ㧗࠸⤖ᬗᛶࢆ᭷ ࡍࡿࡇࡀ᫂ࡽ࡞ࡗࡓ㸬ษ᩿ᚋࡢ࢙࣮࢘ࣁⓎ⏕ࡋࡓຍᕤࢲ࣓࣮ࢪࡣ㸪ࣃࢿࣝࡢⓎ㟁ᛶ⬟ᝏᙳ㡪ࢆཬࡰࡍ ࡇࡽ㸪ᚋᕤ⛬ࡢ➼᪉ᛶ࢚ࢵࢳࣥࢢ࠾࠸࡚㝖ཤࡍࡿᚲせࡀ࠶ࡿ㸬ࡋࡋ㸪ࢲ࣓࣮ࢪᒙࡢ㝖ཤࡣ Si ཎᩱࡢࣟࢫ
Fig. 10 Micro-Raman mapping of Si surfaces processed by (a) diamond wire slicing and (b) proposed method
࡞ࡿ㸪ᕤ⛬ᩘࡢቑຍక࠺㧗ࢥࢫࢺࡢせᅉ࡞ࡿ㸬ᮏຍᕤᢏ⾡ࡼࡾࢲ࣓࣮ࢪࡢ࡞࠸ Si ⾲㠃ࡀᚓࡽࢀࡓࡇ ࡣ㸪ኴ㝧㟁ụࣃࢿࣝ〇㐀ࢥࢫࢺపῶࡢほⅬࡽࢲࣖࣔࣥࢻ࣡ࣖษ᩿ᑐࡋ࡚ࡁ࡞ඃᛶࡀ࠶ࡿゝ࠼ࡿ㸬 ࣭ ຍᕤᚋ⾲㠃⢒ࡉ ኴ㝧㟁ụ⏝ Si ࢙࣮࢘ࣁࡣ㸪⾲㠃ࡢᑕ⋡ࢆపῶࡍࡿࡓࡵ㸪␗᪉ᛶ࢚ࢵࢳࣥࢢࡼࡾ࿘ᮇᵓ㐀ࢆᙧᡂࡍࡿࢸࢡࢫ ࢳࣕࣜࣥࢢฎ⌮ࡀࡉࢀࡿ㸬ษ᩿ᚋࡢ࢙࣮࢘ࣁ⾲㠃ࡢ⢒ࡉࡣ㸪ࢸࢡࢫࢳࣕࣜࣥࢢᕤ⛬ᙳ㡪ࢆ࠼ࡿྍ⬟ᛶࡀ࠶ ࡾ㸪࣡ࣖ᧿㐣⏝࢙࢘ࢵࢺ࢚ࢵࢳࣥࢢࡼࡾຍᕤࡋࡓ Si ࡢࢲ࣓࣮ࢪࢆホ౯ࡋ㸪ࢲࣖࣔࣥࢻ࣡ࣖຍᕤࡢẚ ㍑ࢆ⾜ࡗࡓ㸬ᅗ 9 ࡣࢲࣖࣔࣥࢻ࣡ࣖ࠾࠸࡚ࡶ㸪᪤Ꮡᢏ⾡࡛࠶ࡿࢲࣖࣔࣥࢻ࣡ࣖษ᩿㠃ྠ➼ࡢ⾲㠃⢒ ࡉࡀせồࡉࢀࡿ㸬 ࢲࣖࣔࣥࢻ࣡ࣖᮏᢏ⾡ࡼࡿຍᕤᚋ⾲㠃ࢆ┦ࢩࣇࢺᖸ΅㢧ᚤ㙾㸦Zygo, Newview5032㸧 ࡼࡾホ౯ࡋࡓࡶࡢࡀᅗ 12 ࡛࠶ࡿ㸬ᮏᢏ⾡ࡼࡿຍᕤ㠃ࡣ⾲㠃ࡢพฝࡀࡁࡃ㸪ࡲࡓ⾲㠃⢒ࡉࡶ 1.33 mRa ࡛࠶ ࡾ㸪ࢲࣖࣔࣥࢻ࣡ࣖຍᕤ㠃㸦0.34 mRa㸧ࡼࡾࡶࡁ࡞⾲㠃⢒ࡉ࡛࠶ࡗࡓ㸬ࡑࡇ࡛㸪ᮏᢏ⾡࠾࠸࡚⾲㠃⢒ࡉ ࢆᨵၿࡍࡿࡓࡵ㸪࢚ࢵࢳࣕࣥࢺ⤌ᡂࡢ᳨ウࢆ⾜ࡗࡓ㸬Si ࡢࣇࢵ◪㓟࢚ࢵࢳࣥࢢ࡛ࡣ㸪ᕼ㔘㸦ࣇࢵ㓟◪㓟௨እ ࡢᡂศ㸧㓑㓟ࢆῧຍࡍࡿࡇ࡛⾲㠃⢒ࡉࢆᨵၿ࡛ࡁࡿࡇࡀሗ࿌ࡉࢀ࡚࠸ࡿ (℈ཱྀ㸪1985) 㸬ᅗ 13 ࡣᮏᢏ⾡ ࠾ࡅࡿ㸪࢚ࢵࢳࣕࣥࢺ୰ࡢ㓑㓟⃰ᗘຍᕤ㠃⢒ࡉࡢ㛵ಀࢆ♧ࡋ࡚࠸ࡿ㸬࡞࠾㸪ࣇࢵ㓟࡞ࡽࡧ◪㓟⃰ᗘࡣࡑࢀࡒ ࢀ 4 wt%㸪40 wt%࡛ᅛᐃࡋ࡚࠸ࡿ㸬࢚ࢵࢳࣕࣥࢺ୰ࡢ㓑㓟⃰ᗘࡀቑຍࡍࡿక࠸㸪ຍᕤ㠃ࡢ⾲㠃⢒ࡉࡀᨵၿࡉࢀ ࡚࠸ࡿࡇࡀࢃࡿ㸬ࡑࢀࡒࢀࡢຍᕤ㠃ࢆගᏛ㢧ᚤ㙾ࡼࡾほᐹࡍࡿ㸪㓑㓟ࢆῧຍࡋ࡞࠸ሙྜࡣࡁࡉᩘ༑ m ࡢᴃᙧᵓ㐀ࡀほᐹࡉࢀࡓ㸬ࡇࢀࡣࣇࢵ◪㓟ࡼࡿ Si ࢚ࢵࢳࣥࢢࢆ⾜ࡗࡓ㝿ぢࡽࢀࡿᆺⓗ࡞ᵓ㐀࡛࠶ࡾ㸪 ࢚ࢵࢳࣕࣥࢺ୰ࡢάᛶᛂ✀㸦ࢽࢺࣟࢯࢽ࣒࢘࢜ࣥ㸪NO+㸧ࡀ Si ⾲㠃೫ᅾࡍࡿࡇ㉳ᅉࡍࡿሗ࿌ࡉࢀ࡚ ࠸ࡿ (Patzig-Klein, et al., 2010) 㸬㓑㓟⃰ᗘࡢቑຍᚑ࠸ࡇࡢᴃᙧᵓ㐀ࡢࡁࡉࡀᑠࡉࡃ࡞ࡾ㸪᭱ࡶ㧗࠸㓑㓟⃰
Fig. 12 3D images of silicon surface processed by (a) diamond wire slicing and (b) proposed method
Fig. 13 Surface roughness of processed Si surfaces as a Fig. 14 Material removal rate and kerf loss of Si as a function of CH3COOH concentration in etchant function of CH3COOH concentration in etchant
ᗘࡢ࢚ࢵࢳࣕࣥࢺ࡛ࡣࢇほᐹࡉࢀ࡞ࡃ࡞ࡗࡓ㸬ࡇࢀࡣ㓑㓟ࡢῧຍࡼࡾ࢚ࢵࢳࣕࣥࢺ୰ࡢᛂ✀ࡢ೫ᅾࡀ ᢚไࡉࢀࡓࡓࡵ࡛࠶ࡿᛮࢃࢀࡿ㸬ࡲࡓ㸪࢚ࢵࢳࣕࣥࢺࡢ㓑㓟ῧຍࡀຍᕤ≉ᛶ࠼ࡿᙳ㡪ࢆホ౯ࡋࡓ㸬ᅗ 14 ♧ࡍࡼ࠺㸪ຍᕤ㏿ᗘ࡞ࡽࡧ࣮࢝ࣇࣟࢫࢆ㓑㓟⃰ᗘࡼࡽࡎࡰ୍ᐃࡢ್ࢆ♧ࡋ࡚࠾ࡾ㸪㓑㓟ࡢῧຍࡀຍᕤ ≉ᛶᝏᙳ㡪ࢆ࠼࡞࠸ࡇࡀ☜ㄆࡉࢀࡓ㸬ୖグࡢࡼ࠺㸪࢚ࢵࢳࣕࣥࢺࡢᕼ㔘ᾮ㓑㓟ࢆ⏝࠸ࡿࡇ࡛㸪ຍᕤ ≉ᛶࢆᝏࡉࡏࡎ㸪ຍᕤ㠃⢒ࡉࢆᨵၿࡍࡿࡇࡀ࡛ࡁ㸪ࢲࣖࣔࣥࢻ࣡ࣖຍᕤ㠃ࡰྠ➼ࡢ⾲㠃⢒ࡉࡀᚓࡽ ࢀࡓ㸬 ⤖ ゝ ᮏㄽᩥ࡛ࡣ㸪࣡ࣖ᧿㐣ࡼࡾಁ㐍ࡉࢀࡓ࢙࢘ࢵࢺ࢚ࢵࢳࣥࢢࢆ⏝࠸ࡓ᪂つຍᕤᢏ⾡ࡢ㛤Ⓨࢆ⾜࠸㸪ࢩࣜࢥࣥ ࣥࢦࢵࢺࡢࢫࣛࢩࣥࢢྥࡅࡓᇶᮏⓗ࡞ຍᕤ≉ᛶࡋ࡚㸪ຍᕤ㏿ᗘ㸪࣮࢝ࣇࣟࢫ㸪ຍᕤ㠃ရ㉁ࡘ࠸࡚ホ౯ ࢆ⾜ࡗࡓ㸬௨ୗ㸪ᮏㄽᩥ࡛ᚓࡽࢀࡓ⤖ᯝࢆࡲࡵࡿ㸬 㸦㸯㸧◪㓟࡞ࡽࡧࣇࢵ㓟⃰ᗘࢆቑຍࡉࡏࡿຍᕤ㏿ᗘࡀྥୖࡋࡓࡀ㸪ࣇࢵ㓟⃰ᗘࡢቑຍࡣ࣮࢝ࣇࣟࢫࡢቑ ⧅ࡀࡿࡇࡀࢃࡗࡓ㸬◪㓟⃰ᗘᑐࡋ࡚࣮࢝ࣇࣟࢫࡣኚࡏࡎ୍ᐃ࡞ࡗࡓ㸬ࡲࡓ㸪࣡ࣖ㉮⾜㏿ᗘࡢ ቑຍࡶ࡞࠸ຍᕤ㏿ᗘࡀྥୖࡋࡓ㸬 㸦㸰㸧࣡ࣖ᧿㐣⏝࢙࢘ࢵࢺ࢚ࢵࢳࣥࢢࡼࡾ㸪࣡ࣖ┤ᚄࡼࡾ 10 m ⛬ᗘࡁ࠸࣮࢝ࣇࣟࢫࡀᚓࡽࢀࡓ㸬◪ 㓟⃰ᗘࡢ㧗࠸࢚ࢵࢳࣕࣥࢺࡢ⏝ࡼࡾ㸪⁁ᖜ᪉ྥࡢ࢚ࢵࢳࣥࢢ㏿ᗘࢆపῶࡋ㸪῝ࡉ᪉ྥࡢ࢚ࢵࢳࣥࢢࢆ ಁ㐍ࡉࡏࡿࡇ࡛㸪␗᪉ᛶࡢ㧗࠸ຍᕤࡀᐇ⌧࡛ࡁࡿࡇࡀࢃࡗࡓ㸬ࡲࡓ㸪ከ⤖ᬗ Si ࡢຍᕤ≉ᛶࡣ༢⤖ ᬗ Si ྠ➼࡛࠶ࡿࡇࡀࢃࡗࡓ㸬 㸦㸱㸧ຍᕤᚋ⾲㠃ࢆගᏛ㢧ᚤ㙾ࡼࡾほᐹࡋࡓ⤖ᯝ㸪ࢲࣖࣔࣥࢻ࣡ࣖຍᕤ㠃ࡣࢡࣛࢵࢡࡸࢯ࣮࣐࣮ࢡࡀⓎ⏕ ࡋ࡚࠾ࡾ㸪ຍᕤࢲ࣓࣮ࢪࡀほᐹࡉࢀࡓࡢᑐࡋ㸪㛤Ⓨᢏ⾡ࡼࡿຍᕤ㠃ࡣࡇࢀࡽࡢḞ㝗ࡢ࡞࠸⾲㠃࡛࠶ࡿ ࡇࡀࢃࡗࡓ㸬 㸦㸲㸧࣐ࣛࣥศගࡼࡿຍᕤ㠃ホ౯ࡢ⤖ᯝ㸪ࢲࣖࣔࣥࢻ࣡ࣖຍᕤ㠃ࡣࣔࣝࣇࢫᒙࡢࣆ࣮ࢡࡀᏑᅾࡋࡓ ࡀ㸪㛤Ⓨᢏ⾡ࡼࡿຍᕤ㠃ࡣ⤖ᬗᛶ Si ࡢࣆ࣮ࢡࡢࡳࡀほᐹࡉࢀࡓ㸬 㸦㸳㸧࢚ࢵࢳࣕࣥࢺࡢᕼ㔘ᾮᑐࡋ㸪㓑㓟ࢆῧຍࡍࡿࡇ࡛ຍᕤ㏿ᗘࡸ࣮࢝ࣇࣟࢫᙳ㡪ࢆ࠼ࡿࡇ࡞ࡃษຍ ᕤᚋ⾲㠃⢒ࡉࢆᨵၿ࡛ࡁࡿࡇࡀ࡛ࡁ㸪ࢲࣖࣔࣥࢻ࣡ࣖຍᕤ㠃ྠ➼ࡢ⾲㠃⢒ࡉࡀᚓࡽࢀࡓ㸬 ୖグࡢ⤖ᯝࡽ㸪ᮏຍᕤᢏ⾡ࡣప࣮࢝ࣇࣟࢫ㸪ⷧ⫗࢙࣮࢘ࣁࡀせồࡉࢀࡿኴ㝧㟁ụ⏝ࢩࣜࢥࣥࣥࢦࢵࢺࡢษ ᩿ἲࡋ࡚㸪ᚑ᮶ࡢᶵᲔຍᕤἲࢆ௦᭰ࡋ࠺ࡿᮇᚅࡉࢀࡿ㸬ࡋࡋ㸪ᮏᢏ⾡ࡀᐇ⏝⮳ࡿࡣ㸪⌧≧࡛ࡣຍᕤ ㏿ᗘࡸࣥࢦࢵࢺࡢᆺㄢ㢟ࡀ࠶ࡾ㸪ᚋຍᕤ᮲௳ࡸ࢚ࢵࢳࣕࣥࢺ⤌ᡂ➼ࢆぢ┤ࡍࡇࡼࡿຍᕤࡢ㧗ᗘ ࡀᚲせ࡛࠶ࡿ⪃࠼ࡽࢀࡿ㸬 ㅰ ㎡ ᮏ◊✲ࡢ୍㒊ࡣ㸪NEDO ᪂࢚ࢿࣝࢠ࣮࣋ࣥࢳ࣮ࣕᢏ⾡㠉᪂ᴗ㸪୕㇏⛉Ꮫᢏ⾡⯆༠㸪ඛ➃ຍᕤᶵᲔᢏ⾡ ⯆༠ࡢຓࢆཷࡅ࡚⾜ࢃࢀࡲࡋࡓ㸬ࡇࡇ῝ࡃㅰពࢆ⾲ࡋࡲࡍ㸬 ᩥ ⊩ ༓ⴥᗣ㞞, ㇂Ὀᘯ, ᴮᮏಇஅ, 㟁╔ࢲࣖࣔࣥࢻ࣡ࣖᕤලࡢ㧗㏿〇㐀ἲࡢ㛤Ⓨ, ᪥ᮏᶵᲔᏛㄽᩥ㞟 C ⦅, Vol. 69, No. 680 (2003), pp. 1139-1144. ℈ཱྀᜏ㞝, ࢩࣜࢥ࢙ࣥ࢘ࣁࡢᏛ࢚ࢵࢳࣥࢢ, ⢭ᐦᶵᲔ, Vol. 51, No. 5 (1985), pp. 1013-1018.
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