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単位 Unit D3FK60 品 名 TypeNo. 条 件 Conditions 記号 Symbol 項 目 Item ℃ -55~150 Tstg 保存温度 StorageTemperature ℃ 150 Tj 接合部温度

OperationJunctionTemperature

V 600

VRM せん頭逆電圧

Maximum ReverseVoltage

A 1.1

50Hz正弦波,抵抗負荷,プリント基板実装 Ta=25℃

50Hzsinewave,Resistanceload,glass-epoxysubstrateTa=25˚C

Io

出力電流

AverageRectifiedForwardCurrent 50Hzsi50Hz正弦波,抵抗負荷,アルミナ基板実装 Ta=25℃newave,Resistanceload,aluminasubstrateTa=25˚C 1.5

2.1

50Hz正弦波,抵抗負荷,Tl=93℃ 50Hzsinewave,Resistanceload,Tl=93˚C

A 120

50Hz正弦波,非繰り返し1サイクルせん頭値,Tj=25℃ 50Hzsinewave,Non-repetitive1cyclepeakvalue,Tj=25˚C

IFSM せん頭サージ順電流

PeakSurgeForwardCurrent

A2s 72

1ms≦t<10ms,Tj=25℃

I2t 電流二乗時間積

CurrentSquaredTime

V

MAX 1.2

パルス測定 Pulsemeasurement

IF=2.1A,

VF 順電圧

ForwardVoltage

μA

MAX 10

パルス測定 Pulsemeasurement

VR=600V,

IR 逆電流

ReverseCurrent

ns

MAX100 IF=0.5A,IR=1A,0.25IR

trr

逆回復時間

ReverseRecoveryTime

pF

TYP 37 f=1MHz,VR=10V

Cj

接合容量

JunctionCapacitance

℃/W

MAX 23

接合部・リード間 Junctiontolead

θjl

熱抵抗

ThermalResistance Junct接合部・周囲間,アルミナ基板実装iontoambient,aluminasubstrate MAX 80

θja

MAX115

接合部・周囲間,プリント基板実装 Junctiontoambient,glass-epoxysubstrate

2.8 4.0

3

F

K 60 00

U nit:m m

Pa c ka ge :2F

カソード マーク Cathode m ar k ① ① ② 品名略号 ロット 記号( 例) T y pe N o. D ate code 7.6 ②

Fa s t Re c ove r y Dio d e

S ingle

■外観図 OUTLINE

D3FK60

600 V 2.1A

特 長 ●小型SMD ●高耐圧 ●低VF Fe a ture ●Small SMD ●High Voltage ●Low VF 外形図については新電元 W eb サイトをご参照下さい。捺印表示については捺 印仕様をご確認下さい。

Fo r d e ta ils o f the o utline d im e ns io ns , re fe r to o ur we b s ite . As fo r the m a rking, re fe r to the s p e c ific a tio n "Ma rking, Te rm ina l Co nne c tio n".

■定格表 RATINGS

●絶対最大定格 Abs olute Maximum Ratings(

指定のない場合

T l=25℃)

項 目 単位

Item Unit

保存温度

S to ra g e Te m p e ra ture

接合部温度

Op e ra tio n J unc tio n Te m p e ra ture

せん頭逆電圧 V

Ma xim um Re ve rs e Vo lta g e

出力電流 A

Ave ra g e Re c tifie d Fo rwa rd Curre nt

せん頭サージ順電流 A

Pe a k S urg e Fo rwa rd Curre nt

電流二乗時間積 A2s

Curre nt S q ua re d Tim e

●電気的・熱的特性 Electrical Characteris tics(

指定のない場合

T l= 25℃)

順電圧 V Fo rwa rd Vo lta g e 逆電流 μA Re ve rs e Curre nt 逆回復時間 ns Re ve rs e Re c o ve ry Tim e 接合容量 pF

J unc tio n Ca p a c ita nc e

熱抵抗 ℃/W The rm a l Re s is ta nc e (J 532-P〈2010.06〉) w w w .shindengen.co.jp/product /semi/ 記号 Symbol 条 件 Conditions 規格値 Ratings T stg -55∼150 T j 150 VR M 600 Io 50H z 正弦波,抵抗負荷,プリント基板実装 T a=25℃ 50Hz s ine wa ve , Re s is ta nc e lo a d , g la s s -e p o xy s ub s tra te Ta = 25 °C 1.1 50H z 正弦波,抵抗負荷,アルミナ基板実装 T a=25℃

50Hz s ine wa ve , Re s is ta nc e lo a d , a lum ina s ub s tra te Ta = 25 °C 1.5

50H z 正弦波,抵抗負荷,T l=93℃

50Hz s ine wa ve , Re s is ta nc e lo a d , Tl = 93 °C 2.1

IF SM 50H z 正弦波,非繰り返し 1 サイクルせん頭値,T j=25℃50Hz s ine wa ve , No n-re p e titive 1 c yc le p e a k va lue , Tj= 25 °C 120

I2t 1m s≦ t< 10m s,T j=25℃ 72

VF IF=2.1A , パルス測定P uls e m e a s ure m e nt M A X 1.2 IR VR=600V , パルス測定P uls e m e a s ure m e nt M A X 10 trr IF=0.5A ,IR=1A ,0.25 IR M A X 75 C j f=1M H z,VR=10V T Y P 37 θjl 接合部・リード間J unc tio n to le a d M A X 23 θja 接合部・周囲間,アルミナ基板実装

J unc tio n to a m b ie nt, a lum ina s ub s tra te M A X 80

接合部・周囲間,プリント基板実装

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I FS M F or w ar d C ur re nt I F 〔 A 〕 F or w ar d Po w er D is si pa tio n P F 〔 W 〕 Pe ak Su rg e F or w ar d C ur re nt I F SM 〔 A 〕 Ju nc tio n C ap ac ita nc e C j〔 pF 〕 A ve ra ge Re ct ifi ed Fo rw ar d Cu rr en t I O 〔 A 〕 A ve ra ge Re ct ifi ed Fo rw ar d Cu rr en t I O 〔 A 〕 A ve ra ge Re ct ifi ed Fo rw ar d Cu rr en t I O 〔 A 〕

D3FK60

■特性図 CHARACTERISTIC DIAGRAMS

順方向特性 順電力損失曲線 せん頭サージ順電流耐量

Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability

50 3.5 DC 150 Sine w ave IO 0 D =0. 3 tp 20 D =tp/T T 0.5 10ms10ms 10 2.5T j=150℃ SI N 1cycle 0.3 100 Non-repetitive 5 0.2 T j =25℃ 2 0.1 2 T l=150℃( M A X ) 0.05 1.5 T l=150℃( T Y P) 1 T l= 25℃( M A X ) 50 1 T l= 25℃( T Y P) 0.5 0.5 0.2 Pulse measurement 0.1 0. 15. 25. 0.5 1.5 25. 35. 10 100

F orw ard V oltag e VF〔 V 〕 A verag e Rectifi ed F orw ard Current IO〔 A 〕 N um ber of Cycles 〔 cycle〕

ディレーティ ングカーブ Ta-Io ディレーティ ングカーブ Ta-Io ディレーティ ングカーブ Tl-Io

Derating Curve Ta-Io Derating Curve Ta-Io Derating Curve Tl-Io

16. 2.4 35. DC DC IO IO IO D =0.8 0 DC 0 0 14. VR D =0. VR 3D =0.8 VR VR=VR M 0.5 VR=VR M VR=VR M tp tp tp D =tp/T 12. SI N D =tp/T 0. D =tp/T T 25. T T 0.5 1.6

On glass-epoxy substrate SI N On alumina substrate

0.3

1 SI N

0.3 20.

Solder ing land 2 m m Solder ing land 2 m m

0.2

08. Conductor lay er 35μm 1.20.2 Conductor lay er 20μm 0. Substr ate thick ness 0.64t 15.

0.1 06. 0. 0.1 0.8 1 0.05 0.05 04. 0.05 0.4 05. 02. 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160

A m bient T em perature T a 〔 ℃〕 A m bient T em perature T a 〔 ℃〕 Lead T em perature T l 〔 ℃〕

接合容量 Junction Capacitance 500 f=1M Hz T c=25℃ T Y P 200 100 50 20 10 5 2 1 10 20 50 100 200 600 Reverse V oltag e VR〔 V 〕 * Sine w ave は 50H z で測定しています。 * 50Hz s ine wave is us e d for mea s ure ments .

(J 532-P〈2010.06〉)

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ご 注 意

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Transportation equipment (vehicles, ships, etc.), trunk-line communication equipment, traffic signal control systems, anti-disaster/crime systems, safety equipment, medical equipment, etc.

【Specific applications】

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