Multi Pixel Photon Counter
T. Nakadaira
KEK
Introduction
z
MPPC is new semiconductor photon sensor
Technology is very similar to SiPM. Under development by Hamamatsu Photonics (HPK)
• MPPC have not been listed in their products yet.
• HPK delivered many kinds of test samples to T2K and ILC-CAL.
z
R&D groups in JP-HEP.
ILC Calorimeter (Kobe U,
Niigata U, Sinsyu U, Tsukuba U)
T2K Near detector (Kyoto U)
KEK Detector Technology
Development group
Principal of MPPC
z Micro APD pixel array
# of pixels … 100, 400, 1600
Each pixel is operated in Geiger-mode.
• Bias voltage = 40 ~ 70V
… Only one operation parameter
Outputs from all pixels are directory connected (“Wired-OR”)
• # of read out = 1 channel / device
• Pulse height of output signal ÅÆ # of hit pixels
# of hit pixels ÅÆ # of photons
zGain = ~106
No amplifier is needed
zCompact size
Suitable for optical fiber readout.
zWorks in the Magnetic field.
zHigh QE is expected.
zExpected cost is ~ $10 / device.
1p.e 2p.e 3p.e Raw signal HPK 100pixel MPPC 1mV/div 100ns/div T.Nobuhara (Kyoto U)
R&D Items
z
Measurement of basic performance w/ LED
Gain, Noise rate, Cross talk, Photon Detection Efficiency (PDE), linearity
Å These parameters strongly depends on the bias voltage.
z
Pixel by Pixel uniformity
Inject photon to pixel by pixel using well focused laser beam
• 532nm Laser system @ Niigata University
• 825nm Laser system @ KEK
z
Beam test @ KEK 12GeV PS test beam line
Detect the particle using Plastic-scintillator + WLS optical fiber + MPPC
Beam data is taken in Nov, 2005
0 500 1000 1500 2000 2500 80 100 120 140 160 180 200 220 240
Photon counting by MPPC
z
Charge distribution
LED light (HPK 100 pixel)
We can distinguish up to 45 p.e. peak.
Variation of Intervals between peaks is in 2%. Æ Gains for each pixels are uniform.
0 100 200 300 400 500 250 300 350 400 450 500 550 600 30p.e Charge # event 1p.e 0p.e 2p.e 3p.e # event
Increasing LED light
1300 1400 1500 1600 1700 1800 1900 2000 x 104 46.8 47 47.2 47.4 47.6 47.8 48 48.2 48.4 4600 4800 5000 5200 5400 5600 5800 6000 6200 6400 x 10 3 47.5 47.75 48 48.25 48.5 48.75 49 49.25 49.5
Bias Voltage (V) Bias voltage (V)
HPK 100 pixel HPK 400 Pixel 47 48.4 47.5 49.5 2×107 1.5×107 Gain 6×106 5×106 Gain
MPPC Gain
z
Gain = 8×10
5~ 2×10
71 10 102 103 0 100 200 300 400 500 600 700 800
Noise Rate
z
Measure the signal rate w/o LED light.
Charge
1p.e. pulse … noise
w/o LED
0p.e
1p.e
w/o LED
2p.e
Charge distribution for Noise
0.5p.e
400 pixel
10 2 10 3 10 4 10 5 10 6 47 47.5 48 48.5 49 49.5 0.5p.e threshold 1.5p.e threshold noise rate (Hz) Bias voltage (V)
Noise > 1p.e.
is less than
10 %
1MHz 100 pixel 400 pixel0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 1 2 3 4 5 6 7
Cross talk among the pixels
z
Cross talk is measures in 2 methods.
Noise rate … (Noise > 1.5 p.e ) / (Noise > 0.5 p.e)
Discrepancy of charge distribution from Poisson distribution.
adc count 160 180 200 220 240 260 280 300 h1 Entries 50000 Mean 198.3 RMS 4.671 adc count 160 180 200 220 240 260 280 300 1 10 2 10 3 10 4 10 h1 Entries 50000 Mean 198.3 RMS 4.671 HPK14 0.5p.e 1.5p.e 104 103 102 10 Poisson dist. Data HPK 400pixel V=48.6 p.e ratio
X-talk v.s. bias V (20℃)
X- talk Rate 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 47 47.5 48 48.5 49 49.5 bias voltage (V) HPK400b by poisson law HPK100a by noise rateLinearity measurement
z
If the light intensity became large, several photons
injected in a pixel.
Æ Counted as single photon because of the
Geiger-mode operation.
z
Linearity measurement is important to determine the
number of pixels.
z
Linearity is also affected by cross talk.
Linearity is measured by changing the bias voltage to check the x-talk effect.
z
We use the PMT as a reference of light intensity.
Blue LED
PMT MPPC
Linearity (HPK 100 pixel)
ADC(PMT) 0 10 20 30 40 50 ADC(PMT) 0 10 20 30 40 50 ADC(MPPC) 0 100 200 300 400 500 600 700 HPK14 linearity ADC(PMT) 0 5 10 15 20 25 30 35 ADC(PMT) 0 5 10 15 20 25 30 35 ADC(MPPC) 0 50 100 150 200 250 300 HPK14 linearity MPPC ADC countFit with line
injeceted photo electron number 10 20 30 40 50 60 70 80
injeceted photo electron number 10 20 30 40 50 60 70 80 ratio 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 10% 20% HPK14 linearity
injected photo electron number 10 20 30 40 50 60 70
injected photo electron number 10 20 30 40 50 60 70 ratio 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 10% 20% HPK14 linearity 20%@50p.e 20% 40 # of photon 50 PMT ADC count 20% Discrepancy(%) 0% 0% X-talk rate =0.03 X-talk rate =0.2 # of photon 20%@40p.e M.Taguchi (Kyoto U)
PDE (photon detection efficiency)
PDE relative to PMT is measured.
Quantum Eff. (60~80%)
Probability for p.e. to invoke Geiger
discharge (60~80%)
z # of photo electron in signal/ # of injected photon
PDE=
ε
pixel× Q.E. ×
ε
GeigerDepends on bias voltage
Geometrical Eff. (30~50%)
Depends on
MPPC type Depends on wave length
MPPC(1mm2) PMT(13mmφ) 1mmφslit 青色LED / 赤LED MPPC(1mm2) PMT Blue LED 1mmφ WLS fiber Dispersion is not taken into account in calc.
noise rate(kHz) 300 350 400 450 500 550 600 650 700 noise rate(kHz) 300 350 400 450 500 550 600 650 700 MPPC(p.e)/PMT(p.e) 0.4 0.5 0.6 0.7 0.8 0.9 1 green blue HPK14 PDE
Measured PDE
noise rate(kHz) 300 400 500 600 700 800 noise rate(kHz) 300 400 500 600 700 800 PDE(%) 5 6 7 8 9 10 11 12 Max: 12% (PMT Q.E ~ 2%) 300 400 500 600 700 1 noise rate (kHz) PDE(MPPC)/PDE(PMT) Blue/ green 0.5 PDE(MPPC) Red assuming PDE(PMT=2%)Performance test w/ Laser
z
Test MPPC pixel by pixel (HPK 100 pixel)
Micro Scope Laser Light source 825nm 50ps XY moving stage (1µm pitch control) Spot size ~ 10µm MPPC
• Check the uniformity of efficiency in single pixel •Pixel by Pixel deviation of gain and efficiency
の測定を行った
Uniformity: Single pixel
0 100 200 300 400 500 600 700 80 100 120 140 160 180 100 µm Laser spot 10µm pitch HPK 100pixel Charge dist. in a point Efficiency= signal>0.5 p.e / Total event 0p.e. 1p.e. 0.5p.e. Efficiency x y Flat area: 60x60 µm2 100μm 100μm Sensitive region 70x70μmUniformity: Pixel by Pixel
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 0.92 0.94 0.96 0.98 1 1.02 1.04 1.06 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 0.96 0.98 1 1.02 1.04Set laser spot @ center of each pixel
HPK 100 pixel y y x x Relative Gain Relative Efficiency r.m.s./mean = 3.6% r.m.s./mean = 2.5%
Very good uniformity
1mm 1mm
1mm 1mm
Summary& Prospect
z
MPPC is promising device for photon counting.
Gain ~ 106-107
Noise rate: O(1MHz) for >0.5 p.e., O(10~100kHz) for >1.5 p.e.
X-talk rate: < ~0.2
Photon Detection Efficiency: comparable to PMT
linearity: Discrepancy within 20% up to 40% of # of pixels
Efficiency in single pixel is uniform
Pixel by Pixel deviation of gain and efficiency is very small
z
HPK delivered new samples to T2K and ILC-CAL
group.
64ch MAPMT (as reference) ビーム シンチレータ1.3x2.5x50 cm3 (K2K実験のScibar検出器 で使用していたもの) ファイバー1mmΦ MPPC (HPK or Russia) 4 layers
ビームによるシンチ+ファイバー読み出しのテスト
• 0.5∼1.4GeV/c • proton & pion • ∼100 event/spill • beam size 1x1cm2 T2K 前置検出器と同じ読み出し条件で、 MPPCによってT2Kの要請を満たす光量が得られるか。 さらに、pとπの識別が可能か 動機 4ch全ての ビームによるMPPC シグナルを見ることが できた MIPに対して5p.e.以上 setupHPK製MPPCにおけるファイバーのalignment
HPK製MPPCの受光面とパッケージの位置関係 • Z方向 : 透明カバーと受光面に隙間が存在 受光面‐ファイバー間距離は0.8mmとなる • X,Y方向 : サンプルごとにばらつきがある サンプルごとにファイバーの位置合わせを行った Y X Z 0.8mm ファイバー(1mmφ) 固 定 具 フ ァ イ バ ー 固 定 ネ ジ 移動ステージでファイバー をスキャンし、 MPPCシグナル が最大の点でファイバーの 位置を固定した X、Y方向位置合わせ MPPC X,Y方向の位置のずれにより最大20%,Z方向の隙間により約60%の光量のロスが存在 現段階のパッケージ構造によるもので、デバイスの性能からくるものではない ファイバーから40°で一様に光が広がっているとした場合の値MIPによる光量 (p.e.) Ⅰ
0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 7017.1p.e.
13.3p.e.
Photon Detection Efficiency (PDE)=MPPCの受光面(1mm2 )にフォト ンが入射したときに、それを検出する確率 (バイアス電圧に依存する) PMTと比較したPDEを、HPK製は70%, ロシア製は100% となるようにバイアス電圧を設定した p.e. p.e. #event #event
HPK
ロシア
MIPによるパルスの電荷量分布においてピークをみることができたこの分布の平均p.e.数から、MPPCによって
得られた光量を求めた
MIPによる光量 (p.e.) Ⅱ
39 7.2 #17 73 13.3 #16 56 10.2 #14 54 9.9 #13 PMTとの比 (%) 光量(p.e.) Serial# HPK PDEがPMTの70%のときの光量(p.e.) ロシア PDEがPMTの100%のときの光量(p.e.) 94 17.1 #14 126 22.9 #13 PMTとの 比(%) 光量(p.e.) Serial# PDEはZ方向のロスを含めた値 ロシアの方はファイバーと受光面間 での光のロスは十分小さい (パッケージ構造上) MIPにより、MAPMTで得られた光量は18.2p.e.だった 期待される光量からのずれの原因としては、 ともにPDEの測定誤差があり、 さらにHPK製において、 ファイバーのX,Y方向の位置のずれによる光のロスが挙げられるMPPCにおいて、T2Kからの要請をみたす
光量が得られた
p/π Separation
1.2GeV 1.0GeV 0.9GeV
0.8GeV 0.7GeV 0.6GeV
0.5GeV
1.2GeV 1.0GeV 0.9GeV
0.8GeV 0.7GeV 0.6GeV
0.5GeV