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つくばリポジトリ NENJI 2016 184

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図 2  界面のキャリア散乱特性の比較。 (a) h 面に酸素原子が侵入した界面。 (b) k 面に酸 素原子が侵入した界面。 (c) h 面に欠陥ができた界面。 (d) k 面に欠陥ができた界面。酸 素侵入や欠陥生成の無い界面 (initial) 、酸素原子 1 個侵入 (Oif) 、 2 個侵入 (Oif+sub) 、 3 個侵入後 CO 分子放出 (VCO) 、格子間炭素原子欠陥 (C-Ci)C 、カルボニル基欠陥 (CC) 。 透過確率の initial から減少幅が大きい界面ほどキャリアの散乱が多

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